KR101140939B1 - 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 - Google Patents

패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 Download PDF

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KR101140939B1
KR101140939B1 KR1020097026103A KR20097026103A KR101140939B1 KR 101140939 B1 KR101140939 B1 KR 101140939B1 KR 1020097026103 A KR1020097026103 A KR 1020097026103A KR 20097026103 A KR20097026103 A KR 20097026103A KR 101140939 B1 KR101140939 B1 KR 101140939B1
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South Korea
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pattern
layer
inversion
forming
resist
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KR20100011975A (ko
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아쯔노리 데라사끼
쥰이찌 세끼
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캐논 가부시끼가이샤
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B29—WORKING OF PLASTICS; WORKING OF SUBSTANCES IN A PLASTIC STATE IN GENERAL
    • B29C—SHAPING OR JOINING OF PLASTICS; SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDED FOR; AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING
    • B29C59/00—Surface shaping of articles, e.g. embossing; Apparatus therefor
    • B29C59/02—Surface shaping of articles, e.g. embossing; Apparatus therefor by mechanical means, e.g. pressing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0017—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor for the production of embossing, cutting or similar devices; for the production of casting means
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Nanotechnology (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Theoretical Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Drying Of Semiconductors (AREA)
  • Shaping Of Tube Ends By Bending Or Straightening (AREA)
  • Moulds For Moulding Plastics Or The Like (AREA)
KR1020097026103A 2007-05-23 2008-05-22 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드 Active KR101140939B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007137234A JP5144127B2 (ja) 2007-05-23 2007-05-23 ナノインプリント用のモールドの製造方法
JPJP-P-2007-137234 2007-05-23
PCT/JP2008/059862 WO2008146869A2 (en) 2007-05-23 2008-05-22 Pattern forming method, pattern or mold formed thereby

Publications (2)

Publication Number Publication Date
KR20100011975A KR20100011975A (ko) 2010-02-03
KR101140939B1 true KR101140939B1 (ko) 2012-05-03

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KR1020097026103A Active KR101140939B1 (ko) 2007-05-23 2008-05-22 패턴 형성 방법, 패턴 또는 패턴에 의해 형성되는 몰드

Country Status (5)

Country Link
US (1) US7960090B2 (enExample)
JP (1) JP5144127B2 (enExample)
KR (1) KR101140939B1 (enExample)
CN (1) CN101681095B (enExample)
WO (1) WO2008146869A2 (enExample)

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JP5261165B2 (ja) 2008-12-25 2013-08-14 チェイル インダストリーズ インコーポレイテッド 微細パターンの形成方法
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JP5428636B2 (ja) * 2009-06-17 2014-02-26 住友電気工業株式会社 回折格子の形成方法
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CN102478764B (zh) * 2010-11-30 2013-08-07 中芯国际集成电路制造(北京)有限公司 双重图形化方法
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TWI662359B (zh) * 2013-12-30 2019-06-11 佳能奈米科技股份有限公司 次２０奈米之形貌體的均勻壓印圖案轉移方法
JP6301672B2 (ja) * 2014-02-12 2018-03-28 旭化成株式会社 反転構造体の製造方法及びこれを用いた凹凸構造付基板
US11049725B1 (en) * 2014-05-29 2021-06-29 Corporation For National Research Initiatives Method for etching deep, high-aspect ratio features into silicon carbide and gallium nitride
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JP6512254B2 (ja) * 2017-09-20 2019-05-15 大日本印刷株式会社 ナノインプリントリソグラフィ用テンプレートの製造方法
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Also Published As

Publication number Publication date
JP2008290316A (ja) 2008-12-04
US20080292976A1 (en) 2008-11-27
JP5144127B2 (ja) 2013-02-13
WO2008146869A3 (en) 2009-05-22
WO2008146869A2 (en) 2008-12-04
US7960090B2 (en) 2011-06-14
KR20100011975A (ko) 2010-02-03
CN101681095B (zh) 2012-05-30
CN101681095A (zh) 2010-03-24

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