JP5563544B2 - 表面にリセスを形成する方法 - Google Patents
表面にリセスを形成する方法 Download PDFInfo
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- JP5563544B2 JP5563544B2 JP2011264596A JP2011264596A JP5563544B2 JP 5563544 B2 JP5563544 B2 JP 5563544B2 JP 2011264596 A JP2011264596 A JP 2011264596A JP 2011264596 A JP2011264596 A JP 2011264596A JP 5563544 B2 JP5563544 B2 JP 5563544B2
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- 238000000034 method Methods 0.000 title claims description 47
- 238000005530 etching Methods 0.000 claims description 40
- 239000004094 surface-active agent Substances 0.000 claims description 8
- 238000000059 patterning Methods 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 238000003384 imaging method Methods 0.000 description 40
- 238000012546 transfer Methods 0.000 description 34
- 239000000758 substrate Substances 0.000 description 30
- 230000008569 process Effects 0.000 description 24
- 239000000203 mixture Substances 0.000 description 15
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 10
- 238000001459 lithography Methods 0.000 description 10
- 229910052710 silicon Inorganic materials 0.000 description 10
- 239000010703 silicon Substances 0.000 description 10
- 238000012545 processing Methods 0.000 description 8
- 230000005855 radiation Effects 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 150000007530 organic bases Chemical class 0.000 description 4
- -1 polysiloxane Polymers 0.000 description 4
- 229920001296 polysiloxane Polymers 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- VXIWJBSMSDNSSH-UHFFFAOYSA-N OOCNC1=NC(=NC(=N1)N)N Chemical compound OOCNC1=NC(=NC(=N1)N)N VXIWJBSMSDNSSH-UHFFFAOYSA-N 0.000 description 3
- KUDUQBURMYMBIJ-UHFFFAOYSA-N ethylene glycol diacrylate Substances C=CC(=O)OCCOC(=O)C=C KUDUQBURMYMBIJ-UHFFFAOYSA-N 0.000 description 3
- 238000007654 immersion Methods 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- PSGCQDPCAWOCSH-UHFFFAOYSA-N (4,7,7-trimethyl-3-bicyclo[2.2.1]heptanyl) prop-2-enoate Chemical compound C1CC2(C)C(OC(=O)C=C)CC1C2(C)C PSGCQDPCAWOCSH-UHFFFAOYSA-N 0.000 description 2
- LBLYYCQCTBFVLH-UHFFFAOYSA-N 2-Methylbenzenesulfonic acid Chemical compound CC1=CC=CC=C1S(O)(=O)=O LBLYYCQCTBFVLH-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012776 electronic material Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- CATSNJVOTSVZJV-UHFFFAOYSA-N heptan-2-one Chemical compound CCCCCC(C)=O CATSNJVOTSVZJV-UHFFFAOYSA-N 0.000 description 2
- 239000003999 initiator Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- XMLYCEVDHLAQEL-UHFFFAOYSA-N 2-hydroxy-2-methyl-1-phenylpropan-1-one Chemical compound CC(C)(O)C(=O)C1=CC=CC=C1 XMLYCEVDHLAQEL-UHFFFAOYSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- NPTLOHAAVDZQFS-UHFFFAOYSA-N C(CCCC)C(=O)C.C(C1=CC=CC=C1)S(=O)(=O)O.C(C1CO1)OCCC[Si](OC)(OC)OC Chemical compound C(CCCC)C(=O)C.C(C1=CC=CC=C1)S(=O)(=O)O.C(C1CO1)OCCC[Si](OC)(OC)OC NPTLOHAAVDZQFS-UHFFFAOYSA-N 0.000 description 1
- HVLALRULTQWTIS-UHFFFAOYSA-N C(CCCC)C(=O)C.C(C1=CC=CC=C1)S(=O)(=O)O.OOCNC1=NC(=NC(=N1)N)N Chemical compound C(CCCC)C(=O)C.C(C1=CC=CC=C1)S(=O)(=O)O.OOCNC1=NC(=NC(=N1)N)N HVLALRULTQWTIS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- LNMQRPPRQDGUDR-UHFFFAOYSA-N hexyl prop-2-enoate Chemical compound CCCCCCOC(=O)C=C LNMQRPPRQDGUDR-UHFFFAOYSA-N 0.000 description 1
- 230000002209 hydrophobic effect Effects 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000003381 stabilizer Substances 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Drying Of Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Description
微細加工によって形成される構造体の最小フューチャ寸法を縮小する方法は、Platらに付与された米国特許第6,541,360号に開示されており、小さな臨界寸法を有する集積回路ゲート構造体を形成する2層トリムエッチングプロセスを記載している。更に具体的には、Platらは、ポリシリコン層上に有機基層を堆積させ、該有機基層の上にイメージング層を堆積させて、該イメージング層をパターン形成することによって多層構造体を形成することを記載している。次いでイメージング層は、有機基層を選択的にトリムエッチングし、イメージング層によって生成されるものよりも小さなパターンを形成するためのハードマスクとして利用される。次に、ハードマスクイメージング層が除去され、最終的にポリシリコン層の一部が有機基層によって形成されたパターンを用いてエッチングされる。これによりイメージング層のパターン幅よりも狭幅のゲートパターンの形成が可能になる。
組成1
アクリル酸イソボルニル
アクリル酸n−ヘキシル
エチレングリコールジアクリラート
2−ヒドロキシ−2−メチル−1−フェニル−プロパン−1−オン
組成2
ヒドロキシル−機能性ポリシロキサン
キサメトキシメチルメラミン
トルエンスルホン酸
メチルアミルケトン
組成3
ヒドロキシル−機能性ポリシロキサン
キサメトキシメチルメラミン
γ−グリシドキシプロピルトリメトキシシラン
トルエンスルホン酸
メチル アミル ケトン
Claims (3)
- 反転形状を形成する方法であって、
表面上に、第1の寸法と形状を備えた第1のフューチャを有するパターン形成層を形成するステップと、
前記パターン形成層をエッチングして、前記第1の寸法とは異なる第2の寸法を有する第2のフューチャを形成するステップと、
前記第2のフューチャを重合可能な順応層で覆うステップと、
平坦化モールドを前記順応層に接触させた状態でこの順応層を固化して、該順応層の上面を平坦にするステップと、
前記順応層から平坦化モールドを分離するステップと、
該順応層の上方を除去して前記第2のフューチャの頂部を露出させるステップと、
該第2のフューチャを除去して、前記第1の寸法とは異なる第2の寸法を有する、前記形状の反転形状を作成するステップと
を含む方法。 - 低表面エネルギーコーティングが前記平坦化モールドの順応層と接触する部分に付されている請求項1記載の方法。
- 前記順応層が界面活性剤を含む請求項1記載の方法。
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85087604A | 2004-05-21 | 2004-05-21 | |
US10/850,876 | 2004-05-21 | ||
US10/946,570 US7186656B2 (en) | 2004-05-21 | 2004-09-21 | Method of forming a recessed structure employing a reverse tone process |
US10/946,570 | 2004-09-21 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007527480A Division JP5059608B2 (ja) | 2004-05-21 | 2005-05-19 | リバーストーン処理を利用したリセス構造の形成方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012054612A JP2012054612A (ja) | 2012-03-15 |
JP5563544B2 true JP5563544B2 (ja) | 2014-07-30 |
Family
ID=35429090
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007527480A Active JP5059608B2 (ja) | 2004-05-21 | 2005-05-19 | リバーストーン処理を利用したリセス構造の形成方法 |
JP2011264596A Active JP5563544B2 (ja) | 2004-05-21 | 2011-12-02 | 表面にリセスを形成する方法 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007527480A Active JP5059608B2 (ja) | 2004-05-21 | 2005-05-19 | リバーストーン処理を利用したリセス構造の形成方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7186656B2 (ja) |
EP (1) | EP1761949A4 (ja) |
JP (2) | JP5059608B2 (ja) |
KR (1) | KR101139302B1 (ja) |
CN (1) | CN101356303B (ja) |
TW (1) | TWI289326B (ja) |
WO (1) | WO2005114719A2 (ja) |
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US7323417B2 (en) * | 2004-09-21 | 2008-01-29 | Molecular Imprints, Inc. | Method of forming a recessed structure employing a reverse tone process |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7384569B1 (en) * | 2004-08-02 | 2008-06-10 | Advanced Micro Devices, Inc. | Imprint lithography mask trimming for imprint mask using etch |
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US7252777B2 (en) * | 2004-09-21 | 2007-08-07 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
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JP4247198B2 (ja) * | 2005-03-31 | 2009-04-02 | 株式会社東芝 | 半導体装置の製造方法 |
US7482280B2 (en) * | 2005-08-15 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a lithography pattern |
US20070077763A1 (en) * | 2005-09-30 | 2007-04-05 | Molecular Imprints, Inc. | Deposition technique to planarize a multi-layer structure |
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2004
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US20050260848A1 (en) | 2005-11-24 |
CN101356303B (zh) | 2012-04-04 |
US7186656B2 (en) | 2007-03-06 |
EP1761949A2 (en) | 2007-03-14 |
KR20070013305A (ko) | 2007-01-30 |
WO2005114719A3 (en) | 2008-10-09 |
JP2008517448A (ja) | 2008-05-22 |
KR101139302B1 (ko) | 2012-05-25 |
CN101356303A (zh) | 2009-01-28 |
EP1761949A4 (en) | 2011-04-20 |
JP2012054612A (ja) | 2012-03-15 |
TWI289326B (en) | 2007-11-01 |
TW200603261A (en) | 2006-01-16 |
JP5059608B2 (ja) | 2012-10-24 |
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