JP5059608B2 - リバーストーン処理を利用したリセス構造の形成方法 - Google Patents
リバーストーン処理を利用したリセス構造の形成方法 Download PDFInfo
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- JP5059608B2 JP5059608B2 JP2007527480A JP2007527480A JP5059608B2 JP 5059608 B2 JP5059608 B2 JP 5059608B2 JP 2007527480 A JP2007527480 A JP 2007527480A JP 2007527480 A JP2007527480 A JP 2007527480A JP 5059608 B2 JP5059608 B2 JP 5059608B2
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- layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
- H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00436—Shaping materials, i.e. techniques for structuring the substrate or the layers on the substrate
- B81C1/00444—Surface micromachining, i.e. structuring layers on the substrate
- B81C1/0046—Surface micromachining, i.e. structuring layers on the substrate using stamping, e.g. imprinting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
- H01L21/3083—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
- H01L21/3086—Chemical or electrical treatment, e.g. electrolytic etching using masks characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76816—Aspects relating to the layout of the pattern or to the size of vias or trenches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76817—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics using printing or stamping techniques
Description
組成1
アクリル酸イソボルニル
アクリル酸n−ヘキシル
エチレングリコールジアクリラート
2−ヒドロキシ−2−メチル−1−フェニル−プロパン−1−オン
組成2
ヒドロキシル−機能性ポリシロキサン
キサメトキシメチルメラミン
トルエンスルホン酸
メチルアミルケトン
組成3
ヒドロキシル−機能性ポリシロキサン
キサメトキシメチルメラミン
γ−グリシドキシプロピルトリメトキシシラン
トルエンスルホン酸
メチル アミル ケトン
Claims (3)
- 表面に第2の寸法(c1)と第2の形状を有するリセス部を形成する方法であって、
前記表面上に、転写層と、この転写層の上側に前記第2の寸法より大きい第1の寸法(a1)と前記第2の形状と同じ第1の形状とを備えたフューチャを有するイメージング層とを有するパターン形成層を形成するステップと、
前記フューチャをマスクとして前記転写層をエッチングすることによって、前記転写層に、前記第2の寸法と第2の形状とを有する突出部を形成するステップと、
前記突出部を、重合固化可能な材料からなる順応層で覆って該順応層を固化するステップと、
該順応層の上方を除去して前記突出部の頂部を露出させるとともに、該突出部を、前記重合固化可能な材料と相互作用してin-situ硬化マスクを生成する酸素ベースの化学作用を伴うプラズマエッチングにより除去して、該突出部に対応するとともに前記第2の寸法を有するリセス部反転形状を作成するステップと、
該リセス部反転形状を前記表面にエッチングによって転写するステップと、
を含む方法。 - 前記転写ステップは、前記リセス部反転形状を基板に転写するステップを更に含む請求項1に記載の方法。
- 前記転写ステップは、前記リセス部反転形状を基層に転写するステップを更に含む請求項1に記載の方法。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US85087604A | 2004-05-21 | 2004-05-21 | |
US10/850,876 | 2004-05-21 | ||
US10/946,570 US7186656B2 (en) | 2004-05-21 | 2004-09-21 | Method of forming a recessed structure employing a reverse tone process |
US10/946,570 | 2004-09-21 | ||
PCT/US2005/017756 WO2005114719A2 (en) | 2004-05-21 | 2005-05-19 | Method of forming a recessed structure employing a reverse tone process |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011264596A Division JP5563544B2 (ja) | 2004-05-21 | 2011-12-02 | 表面にリセスを形成する方法 |
Publications (3)
Publication Number | Publication Date |
---|---|
JP2008517448A JP2008517448A (ja) | 2008-05-22 |
JP2008517448A5 JP2008517448A5 (ja) | 2008-07-03 |
JP5059608B2 true JP5059608B2 (ja) | 2012-10-24 |
Family
ID=35429090
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007527480A Active JP5059608B2 (ja) | 2004-05-21 | 2005-05-19 | リバーストーン処理を利用したリセス構造の形成方法 |
JP2011264596A Active JP5563544B2 (ja) | 2004-05-21 | 2011-12-02 | 表面にリセスを形成する方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
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JP2011264596A Active JP5563544B2 (ja) | 2004-05-21 | 2011-12-02 | 表面にリセスを形成する方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US7186656B2 (ja) |
EP (1) | EP1761949A4 (ja) |
JP (2) | JP5059608B2 (ja) |
KR (1) | KR101139302B1 (ja) |
CN (1) | CN101356303B (ja) |
TW (1) | TWI289326B (ja) |
WO (1) | WO2005114719A2 (ja) |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7323417B2 (en) * | 2004-09-21 | 2008-01-29 | Molecular Imprints, Inc. | Method of forming a recessed structure employing a reverse tone process |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
US7906180B2 (en) | 2004-02-27 | 2011-03-15 | Molecular Imprints, Inc. | Composition for an etching mask comprising a silicon-containing material |
US7384569B1 (en) * | 2004-08-02 | 2008-06-10 | Advanced Micro Devices, Inc. | Imprint lithography mask trimming for imprint mask using etch |
US7547504B2 (en) * | 2004-09-21 | 2009-06-16 | Molecular Imprints, Inc. | Pattern reversal employing thick residual layers |
US7252777B2 (en) * | 2004-09-21 | 2007-08-07 | Molecular Imprints, Inc. | Method of forming an in-situ recessed structure |
US7585424B2 (en) * | 2005-01-18 | 2009-09-08 | Hewlett-Packard Development Company, L.P. | Pattern reversal process for self aligned imprint lithography and device |
JP4247198B2 (ja) * | 2005-03-31 | 2009-04-02 | 株式会社東芝 | 半導体装置の製造方法 |
US7482280B2 (en) * | 2005-08-15 | 2009-01-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming a lithography pattern |
US7259102B2 (en) * | 2005-09-30 | 2007-08-21 | Molecular Imprints, Inc. | Etching technique to planarize a multi-layer structure |
US7767570B2 (en) | 2006-03-22 | 2010-08-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Dummy vias for damascene process |
US7759253B2 (en) * | 2006-08-07 | 2010-07-20 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and material for forming a double exposure lithography pattern |
US7776628B2 (en) * | 2006-11-16 | 2010-08-17 | International Business Machines Corporation | Method and system for tone inverting of residual layer tolerant imprint lithography |
WO2008157640A2 (en) | 2007-06-18 | 2008-12-24 | Illumina, Inc. | Microfabrication methods for the optimal patterning of substrates |
US8136224B1 (en) | 2008-05-15 | 2012-03-20 | Western Digital (Fremont), Llc | Method and system for providing a perpendicular magnetic recording head utilizing a mask having an undercut line |
JP5397636B2 (ja) * | 2008-07-24 | 2014-01-22 | 日産化学工業株式会社 | コーティング組成物及びパターン形成方法 |
US8415010B2 (en) * | 2008-10-20 | 2013-04-09 | Molecular Imprints, Inc. | Nano-imprint lithography stack with enhanced adhesion between silicon-containing and non-silicon containing layers |
US8529778B2 (en) * | 2008-11-13 | 2013-09-10 | Molecular Imprints, Inc. | Large area patterning of nano-sized shapes |
JP2012522327A (ja) * | 2009-03-23 | 2012-09-20 | インテバック・インコーポレイテッド | パターニングされた媒体の溝と島の比率の最適化のための方法 |
US8492009B1 (en) | 2009-08-25 | 2013-07-23 | Wd Media, Inc. | Electrochemical etching of magnetic recording layer |
NL2007161A (en) | 2010-09-09 | 2012-03-12 | Asml Netherlands Bv | Lithography using self-assembled polymers. |
WO2012061816A2 (en) | 2010-11-05 | 2012-05-10 | Molecular Imprints, Inc. | Patterning of non-convex shaped nanostructures |
US8778848B2 (en) | 2011-06-09 | 2014-07-15 | Illumina, Inc. | Patterned flow-cells useful for nucleic acid analysis |
CA2856163C (en) | 2011-10-28 | 2019-05-07 | Illumina, Inc. | Microarray fabrication system and method |
US8870345B2 (en) * | 2012-07-16 | 2014-10-28 | Xerox Corporation | Method of making superoleophobic re-entrant resist structures |
KR20140046266A (ko) * | 2012-10-10 | 2014-04-18 | 삼성디스플레이 주식회사 | 패턴 형성 장치, 패턴 형성 장치의 제조 방법 및 패턴 형성 방법 |
US9105295B2 (en) * | 2013-02-25 | 2015-08-11 | HGST Netherlands B.V. | Pattern tone reversal |
US9514950B2 (en) | 2013-12-30 | 2016-12-06 | Canon Nanotechnologies, Inc. | Methods for uniform imprint pattern transfer of sub-20 nm features |
KR102279239B1 (ko) | 2014-07-25 | 2021-07-19 | 삼성전자주식회사 | 임프린트 공정을 이용한 역상 패턴 전사방법 |
US10580659B2 (en) | 2017-09-14 | 2020-03-03 | Canon Kabushiki Kaisha | Planarization process and apparatus |
US10304744B1 (en) | 2018-05-15 | 2019-05-28 | International Business Machines Corporation | Inverse tone direct print EUV lithography enabled by selective material deposition |
US11398377B2 (en) | 2020-01-14 | 2022-07-26 | International Business Machines Corporation | Bilayer hardmask for direct print lithography |
Family Cites Families (114)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6053675B2 (ja) | 1978-09-20 | 1985-11-27 | 富士写真フイルム株式会社 | スピンコ−テイング方法 |
EP0091651B1 (en) | 1982-04-12 | 1988-08-03 | Nippon Telegraph And Telephone Corporation | Method for forming micropattern |
US4507331A (en) | 1983-12-12 | 1985-03-26 | International Business Machines Corporation | Dry process for forming positive tone micro patterns |
US4512848A (en) | 1984-02-06 | 1985-04-23 | Exxon Research And Engineering Co. | Procedure for fabrication of microstructures over large areas using physical replication |
JPS61190947A (ja) * | 1985-02-19 | 1986-08-25 | Toshiba Corp | 微細パタ−ンの形成方法 |
US4657845A (en) | 1986-01-14 | 1987-04-14 | International Business Machines Corporation | Positive tone oxygen plasma developable photoresist |
US4692205A (en) | 1986-01-31 | 1987-09-08 | International Business Machines Corporation | Silicon-containing polyimides as oxygen etch stop and dual dielectric coatings |
FR2604553A1 (fr) | 1986-09-29 | 1988-04-01 | Rhone Poulenc Chimie | Substrat polymere rigide pour disque optique et les disques optiques obtenus a partir dudit substrat |
JPS63155621A (ja) * | 1986-12-18 | 1988-06-28 | Oki Electric Ind Co Ltd | 半導体装置の製造方法 |
US4931351A (en) | 1987-01-12 | 1990-06-05 | Eastman Kodak Company | Bilayer lithographic process |
US4731155A (en) | 1987-04-15 | 1988-03-15 | General Electric Company | Process for forming a lithographic mask |
US4936951A (en) | 1987-10-26 | 1990-06-26 | Matsushita Electric Industrial Co., Ltd. | Method of reducing proximity effect in electron beam resists |
US5028366A (en) | 1988-01-12 | 1991-07-02 | Air Products And Chemicals, Inc. | Water based mold release compositions for making molded polyurethane foam |
US4891303A (en) | 1988-05-26 | 1990-01-02 | Texas Instruments Incorporated | Trilayer microlithographic process using a silicon-based resist as the middle layer |
CA2010169A1 (en) | 1989-02-21 | 1990-08-21 | Masakazu Uekita | Multi-layer resist |
JP3001607B2 (ja) | 1989-04-24 | 2000-01-24 | シーメンス、アクチエンゲゼルシヤフト | 二層法における寸法安定な構造転写方法 |
DE59010728D1 (de) | 1989-04-24 | 1997-07-31 | Siemens Ag | Verfahren zur Erzeugung ätzresistenter Strukturen |
US5110514A (en) | 1989-05-01 | 1992-05-05 | Soane Technologies, Inc. | Controlled casting of a shrinkable material |
JP2586692B2 (ja) | 1990-05-24 | 1997-03-05 | 松下電器産業株式会社 | パターン形成材料およびパターン形成方法 |
DE4029912A1 (de) | 1990-09-21 | 1992-03-26 | Philips Patentverwaltung | Verfahren zur bildung mindestens eines grabens in einer substratschicht |
US5314772A (en) | 1990-10-09 | 1994-05-24 | Arizona Board Of Regents | High resolution, multi-layer resist for microlithography and method therefor |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5545367A (en) | 1992-04-15 | 1996-08-13 | Soane Technologies, Inc. | Rapid prototype three dimensional stereolithography |
US5601641A (en) | 1992-07-21 | 1997-02-11 | Tse Industries, Inc. | Mold release composition with polybutadiene and method of coating a mold core |
JPH06244156A (ja) * | 1993-02-15 | 1994-09-02 | Nippon Telegr & Teleph Corp <Ntt> | パタ―ン形成法 |
DE69405451T2 (de) | 1993-03-16 | 1998-03-12 | Koninkl Philips Electronics Nv | Verfahren und Vorrichtung zur Herstellung eines strukturierten Reliefbildes aus vernetztem Photoresist auf einer flachen Substratoberfläche |
US5348616A (en) | 1993-05-03 | 1994-09-20 | Motorola, Inc. | Method for patterning a mold |
JP2837063B2 (ja) | 1993-06-04 | 1998-12-14 | シャープ株式会社 | レジストパターンの形成方法 |
US5776748A (en) | 1993-10-04 | 1998-07-07 | President And Fellows Of Harvard College | Method of formation of microstamped patterns on plates for adhesion of cells and other biological materials, devices and uses therefor |
US6776094B1 (en) | 1993-10-04 | 2004-08-17 | President & Fellows Of Harvard College | Kit For Microcontact Printing |
US5512131A (en) | 1993-10-04 | 1996-04-30 | President And Fellows Of Harvard College | Formation of microstamped patterns on surfaces and derivative articles |
KR970009858B1 (ko) | 1994-01-12 | 1997-06-18 | 엘지반도체 주식회사 | 다층 레지스트 패턴 형성방법 |
US5434107A (en) | 1994-01-28 | 1995-07-18 | Texas Instruments Incorporated | Method for planarization |
JPH08262717A (ja) | 1995-03-27 | 1996-10-11 | Fujitsu Ltd | レジスト組成物及びレジストパターンの形成方法 |
US5849209A (en) | 1995-03-31 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Mold material made with additives |
US5743998A (en) | 1995-04-19 | 1998-04-28 | Park Scientific Instruments | Process for transferring microminiature patterns using spin-on glass resist media |
US5820769A (en) | 1995-05-24 | 1998-10-13 | Regents Of The University Of Minnesota | Method for making magnetic storage having discrete elements with quantized magnetic moments |
US5597438A (en) | 1995-09-14 | 1997-01-28 | Siemens Aktiengesellschaft | Etch chamber having three independently controlled electrodes |
US5849222A (en) | 1995-09-29 | 1998-12-15 | Johnson & Johnson Vision Products, Inc. | Method for reducing lens hole defects in production of contact lens blanks |
US20040137734A1 (en) * | 1995-11-15 | 2004-07-15 | Princeton University | Compositions and processes for nanoimprinting |
US7758794B2 (en) * | 2001-10-29 | 2010-07-20 | Princeton University | Method of making an article comprising nanoscale patterns with reduced edge roughness |
US6518189B1 (en) | 1995-11-15 | 2003-02-11 | Regents Of The University Of Minnesota | Method and apparatus for high density nanostructures |
US20030080471A1 (en) * | 2001-10-29 | 2003-05-01 | Chou Stephen Y. | Lithographic method for molding pattern with nanoscale features |
US5772905A (en) | 1995-11-15 | 1998-06-30 | Regents Of The University Of Minnesota | Nanoimprint lithography |
US6482742B1 (en) | 2000-07-18 | 2002-11-19 | Stephen Y. Chou | Fluid pressure imprint lithography |
US6309580B1 (en) | 1995-11-15 | 2001-10-30 | Regents Of The University Of Minnesota | Release surfaces, particularly for use in nanoimprint lithography |
US20040036201A1 (en) * | 2000-07-18 | 2004-02-26 | Princeton University | Methods and apparatus of field-induced pressure imprint lithography |
US5684066A (en) | 1995-12-04 | 1997-11-04 | H.B. Fuller Licensing & Financing, Inc. | Protective coatings having enhanced properties |
US5669303A (en) | 1996-03-04 | 1997-09-23 | Motorola | Apparatus and method for stamping a surface |
US6355198B1 (en) | 1996-03-15 | 2002-03-12 | President And Fellows Of Harvard College | Method of forming articles including waveguides via capillary micromolding and microtransfer molding |
US5942443A (en) | 1996-06-28 | 1999-08-24 | Caliper Technologies Corporation | High throughput screening assay systems in microscale fluidic devices |
US5888650A (en) | 1996-06-03 | 1999-03-30 | Minnesota Mining And Manufacturing Company | Temperature-responsive adhesive article |
US6074827A (en) | 1996-07-30 | 2000-06-13 | Aclara Biosciences, Inc. | Microfluidic method for nucleic acid purification and processing |
US5942449A (en) | 1996-08-28 | 1999-08-24 | Micron Technology, Inc. | Method for removing an upper layer of material from a semiconductor wafer |
JP3258240B2 (ja) * | 1996-09-10 | 2002-02-18 | 株式会社日立製作所 | エッチング方法 |
US5948470A (en) | 1997-04-28 | 1999-09-07 | Harrison; Christopher | Method of nanoscale patterning and products made thereby |
US6071372A (en) | 1997-06-05 | 2000-06-06 | Applied Materials, Inc. | RF plasma etch reactor with internal inductive coil antenna and electrically conductive chamber walls |
US6033977A (en) | 1997-06-30 | 2000-03-07 | Siemens Aktiengesellschaft | Dual damascene structure |
JP3780700B2 (ja) | 1998-05-26 | 2006-05-31 | セイコーエプソン株式会社 | パターン形成方法、パターン形成装置、パターン形成用版、パターン形成用版の製造方法、カラーフィルタの製造方法、導電膜の製造方法及び液晶パネルの製造方法 |
DE19828969A1 (de) | 1998-06-29 | 1999-12-30 | Siemens Ag | Verfahren zur Herstellung von Halbleiterbauelementen |
US5907782A (en) | 1998-08-15 | 1999-05-25 | Acer Semiconductor Manufacturing Inc. | Method of forming a multiple fin-pillar capacitor for a high density dram cell |
US6096655A (en) | 1998-09-02 | 2000-08-01 | International Business Machines, Corporation | Method for forming vias and trenches in an insulation layer for a dual-damascene multilevel interconnection structure |
US6713238B1 (en) | 1998-10-09 | 2004-03-30 | Stephen Y. Chou | Microscale patterning and articles formed thereby |
US6218316B1 (en) | 1998-10-22 | 2001-04-17 | Micron Technology, Inc. | Planarization of non-planar surfaces in device fabrication |
CN2349218Y (zh) * | 1998-11-18 | 1999-11-17 | 中国科学院长春光学精密机械研究所 | 一种用于准分子激光刻蚀的附着式掩膜组件 |
US6334960B1 (en) | 1999-03-11 | 2002-01-01 | Board Of Regents, The University Of Texas System | Step and flash imprint lithography |
JP4286374B2 (ja) | 1999-03-30 | 2009-06-24 | 新日鐵化学株式会社 | シリコーン樹脂及びこれを含有する感光性樹脂組成物 |
US6342097B1 (en) | 1999-04-23 | 2002-01-29 | Sdc Coatings, Inc. | Composition for providing an abrasion resistant coating on a substrate with a matched refractive index and controlled tintability |
JP2000323461A (ja) * | 1999-05-11 | 2000-11-24 | Nec Corp | 微細パターン形成装置、その製造方法、および形成方法 |
US6150190A (en) | 1999-05-27 | 2000-11-21 | Motorola Inc. | Method of formation of buried mirror semiconductive device |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6329256B1 (en) | 1999-09-24 | 2001-12-11 | Advanced Micro Devices, Inc. | Self-aligned damascene gate formation with low gate resistance |
TW442961B (en) | 1999-10-08 | 2001-06-23 | Taiwan Semiconductor Mfg | Manufacturing method of double-recess crown capacitor of DRAM |
DE19958966A1 (de) | 1999-12-07 | 2001-06-13 | Infineon Technologies Ag | Erzeugung von Resiststrukturen |
CA2395760A1 (en) | 1999-12-23 | 2001-06-28 | University Of Massachusetts | Methods and apparatus for forming submicron patterns on films |
US6245581B1 (en) | 2000-04-19 | 2001-06-12 | Advanced Micro Devices, Inc. | Method and apparatus for control of critical dimension using feedback etch control |
US6566258B1 (en) | 2000-05-10 | 2003-05-20 | Applied Materials, Inc. | Bi-layer etch stop for inter-level via |
US6482733B2 (en) | 2000-05-15 | 2002-11-19 | Asm Microchemistry Oy | Protective layers prior to alternating layer deposition |
US6759325B2 (en) | 2000-05-15 | 2004-07-06 | Asm Microchemistry Oy | Sealing porous structures |
US7635262B2 (en) * | 2000-07-18 | 2009-12-22 | Princeton University | Lithographic apparatus for fluid pressure imprint lithography |
US20050037143A1 (en) * | 2000-07-18 | 2005-02-17 | Chou Stephen Y. | Imprint lithography with improved monitoring and control and apparatus therefor |
US7211214B2 (en) * | 2000-07-18 | 2007-05-01 | Princeton University | Laser assisted direct imprint lithography |
US6326627B1 (en) | 2000-08-02 | 2001-12-04 | Archimedes Technology Group, Inc. | Mass filtering sputtered ion source |
US6730256B1 (en) | 2000-08-04 | 2004-05-04 | Massachusetts Institute Of Technology | Stereolithographic patterning with interlayer surface modifications |
US6777170B1 (en) | 2000-08-04 | 2004-08-17 | Massachusetts Institute Of Technology | Stereolithographic patterning by variable dose light delivery |
US6468853B1 (en) | 2000-08-18 | 2002-10-22 | Chartered Semiconductor Manufacturing Ltd. | Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner |
US6455411B1 (en) | 2000-09-11 | 2002-09-24 | Texas Instruments Incorporated | Defect and etch rate control in trench etch for dual damascene patterning of low-k dielectrics |
JP3848070B2 (ja) | 2000-09-27 | 2006-11-22 | 株式会社東芝 | パターン形成方法 |
WO2002067055A2 (en) | 2000-10-12 | 2002-08-29 | Board Of Regents, The University Of Texas System | Template for room temperature, low pressure micro- and nano-imprint lithography |
US6387787B1 (en) | 2001-03-02 | 2002-05-14 | Motorola, Inc. | Lithographic template and method of formation and use |
US6541360B1 (en) | 2001-04-30 | 2003-04-01 | Advanced Micro Devices, Inc. | Bi-layer trim etch process to form integrated circuit gate structures |
WO2003035932A1 (en) * | 2001-09-25 | 2003-05-01 | Minuta Technology Co., Ltd. | Method for forming a micro-pattern on a substrate by using capillary force |
US6716767B2 (en) | 2001-10-31 | 2004-04-06 | Brewer Science, Inc. | Contact planarization materials that generate no volatile byproducts or residue during curing |
US6489237B1 (en) * | 2001-12-04 | 2002-12-03 | Taiwan Semiconductor Manufacturing Company | Method of patterning lines in semiconductor devices |
US6767202B2 (en) * | 2001-12-18 | 2004-07-27 | 3M Innovative Properties Company | Tooling with helical coils for structured surface articles |
DE10200678B4 (de) * | 2002-01-10 | 2006-05-11 | Infineon Technologies Ag | Verfahren zum Bearbeiten eines Substrats zum Ausbilden einer Struktur |
US6737202B2 (en) | 2002-02-22 | 2004-05-18 | Motorola, Inc. | Method of fabricating a tiered structure using a multi-layered resist stack and use |
US7455955B2 (en) * | 2002-02-27 | 2008-11-25 | Brewer Science Inc. | Planarization method for multi-layer lithography processing |
US6743713B2 (en) | 2002-05-15 | 2004-06-01 | Institute Of Microelectronics | Method of forming dual damascene pattern using dual bottom anti-reflective coatings (BARC) |
US6495430B1 (en) | 2002-05-21 | 2002-12-17 | Macronix International Co., Ltd. | Process for fabricating sharp corner-free shallow trench isolation structure |
US6849558B2 (en) | 2002-05-22 | 2005-02-01 | The Board Of Trustees Of The Leland Stanford Junior University | Replication and transfer of microstructures and nanostructures |
US6932934B2 (en) | 2002-07-11 | 2005-08-23 | Molecular Imprints, Inc. | Formation of discontinuous films during an imprint lithography process |
US6900881B2 (en) | 2002-07-11 | 2005-05-31 | Molecular Imprints, Inc. | Step and repeat imprint lithography systems |
US7077992B2 (en) * | 2002-07-11 | 2006-07-18 | Molecular Imprints, Inc. | Step and repeat imprint lithography processes |
US6908861B2 (en) | 2002-07-11 | 2005-06-21 | Molecular Imprints, Inc. | Method for imprint lithography using an electric field |
US6916584B2 (en) | 2002-08-01 | 2005-07-12 | Molecular Imprints, Inc. | Alignment methods for imprint lithography |
US7070405B2 (en) * | 2002-08-01 | 2006-07-04 | Molecular Imprints, Inc. | Alignment systems for imprint lithography |
US7027156B2 (en) * | 2002-08-01 | 2006-04-11 | Molecular Imprints, Inc. | Scatterometry alignment for imprint lithography |
US6820677B2 (en) | 2002-08-20 | 2004-11-23 | Ford Motor Company | Method of making a spray formed article |
US7750059B2 (en) * | 2002-12-04 | 2010-07-06 | Hewlett-Packard Development Company, L.P. | Polymer solution for nanoimprint lithography to reduce imprint temperature and pressure |
US6770852B1 (en) | 2003-02-27 | 2004-08-03 | Lam Research Corporation | Critical dimension variation compensation across a wafer by means of local wafer temperature control |
US7179396B2 (en) * | 2003-03-25 | 2007-02-20 | Molecular Imprints, Inc. | Positive tone bi-layer imprint lithography method |
WO2004086471A1 (en) * | 2003-03-27 | 2004-10-07 | Korea Institute Of Machinery & Materials | Uv nanoimprint lithography process using elementwise embossed stamp and selectively additive pressurization |
US7396475B2 (en) * | 2003-04-25 | 2008-07-08 | Molecular Imprints, Inc. | Method of forming stepped structures employing imprint lithography |
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US7186656B2 (en) | 2007-03-06 |
KR101139302B1 (ko) | 2012-05-25 |
CN101356303A (zh) | 2009-01-28 |
US20050260848A1 (en) | 2005-11-24 |
KR20070013305A (ko) | 2007-01-30 |
TW200603261A (en) | 2006-01-16 |
TWI289326B (en) | 2007-11-01 |
JP2012054612A (ja) | 2012-03-15 |
CN101356303B (zh) | 2012-04-04 |
EP1761949A4 (en) | 2011-04-20 |
JP5563544B2 (ja) | 2014-07-30 |
JP2008517448A (ja) | 2008-05-22 |
WO2005114719A3 (en) | 2008-10-09 |
EP1761949A2 (en) | 2007-03-14 |
WO2005114719A2 (en) | 2005-12-01 |
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