JP5051409B2 - 半導体素子の製造方法 - Google Patents
半導体素子の製造方法 Download PDFInfo
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- JP5051409B2 JP5051409B2 JP2005152125A JP2005152125A JP5051409B2 JP 5051409 B2 JP5051409 B2 JP 5051409B2 JP 2005152125 A JP2005152125 A JP 2005152125A JP 2005152125 A JP2005152125 A JP 2005152125A JP 5051409 B2 JP5051409 B2 JP 5051409B2
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- metal
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- insulating film
- metal line
- film
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- 239000004065 semiconductor Substances 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 64
- 239000002184 metal Substances 0.000 claims description 63
- 238000000034 method Methods 0.000 claims description 21
- 238000010438 heat treatment Methods 0.000 claims description 16
- 229910052782 aluminium Inorganic materials 0.000 claims description 8
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 6
- 238000004544 sputter deposition Methods 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 2
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 239000010408 film Substances 0.000 description 82
- 230000035882 stress Effects 0.000 description 49
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 23
- 230000008569 process Effects 0.000 description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 7
- 230000000087 stabilizing effect Effects 0.000 description 6
- 230000008646 thermal stress Effects 0.000 description 6
- 238000000151 deposition Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 239000003870 refractory metal Substances 0.000 description 3
- 239000004215 Carbon black (E152) Substances 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 150000002430 hydrocarbons Chemical class 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02252—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by plasma treatment, e.g. plasma oxidation of the substrate
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- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02337—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour
- H01L21/0234—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a gas or vapour treatment by exposure to a plasma
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/2855—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by physical means, e.g. sputtering, evaporation
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31608—Deposition of SiO2
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- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32051—Deposition of metallic or metal-silicide layers
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76886—Modifying permanently or temporarily the pattern or the conductivity of conductive members, e.g. formation of alloys, reduction of contact resistances
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Description
本発明の第1参考例は、前記メタルライン102aを形成した後、第2絶縁膜103を蒸着する前に熱処理工程を行ってメタルライン102aの圧縮応力を減少させようとする。
本発明の第1実施例は、メタルライン102aの溶融を抑制させてメタルライン102aの応力を変更させようとするもので、前記メタルライン102aを高融点金属成分が含まれるように構成する。
本発明の第2実施例では、第2絶縁膜103の蒸着の際にバイアスパワーを3000〜6000Wattにして第2絶縁膜103の圧縮応力を減少させようとする。
従来の技術で説明したように、第1絶縁膜101と第2絶縁膜103がお互い異なる二種膜の場合、すなわち第1絶縁膜101をTEOS酸化膜、第2絶縁膜103をHDP酸化膜から構成する場合、2膜の界面における界面結合力(adhesive)が悪くてクラックが発生する。
従来の技術で説明したように、第1絶縁膜101としてTEOS酸化膜を使用する場合、TEOS酸化膜の表面にH2、CxHy、H2O、CO、O2、CO2などの不純物が多量含有されてその界面が非常に不安定である。
102 金属膜
102a メタルライン
103 第2絶縁膜
Claims (3)
- (a)第1絶縁膜の形成された基板上にメタルラインを形成するが、前記メタルラインはAl金属膜にAl 2 O 3 およびWが含まれるように形成する段階と、
(b)前記メタルラインをパターニングする段階と、
(c)前記メタルライン上に第2絶縁膜を形成する段階と、
(d)熱処理工程を行う段階とを含んでなる半導体素子の製造方法。 - 前記(a)段階で前記メタルラインは、前記Al金属膜にAl 2 O 3 およびWを分散強化処理して形成することを特徴とする請求項1記載の半導体素子の製造方法。
- 前記(a)段階で 前記メタルラインはAl金属膜 のAlとAl 2 O 3 およびWを同時スパッタリングする方法で形成することを特徴とする請求項1記載の半導体素子の製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020040097157A KR100567531B1 (ko) | 2004-11-24 | 2004-11-24 | 반도체 소자의 제조방법 |
KR10-2004-0097157 | 2004-11-24 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2006148046A JP2006148046A (ja) | 2006-06-08 |
JP5051409B2 true JP5051409B2 (ja) | 2012-10-17 |
Family
ID=36371500
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2005152125A Expired - Fee Related JP5051409B2 (ja) | 2004-11-24 | 2005-05-25 | 半導体素子の製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US7479453B2 (ja) |
JP (1) | JP5051409B2 (ja) |
KR (1) | KR100567531B1 (ja) |
DE (1) | DE102005028629A1 (ja) |
TW (1) | TWI311795B (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100875163B1 (ko) * | 2007-06-26 | 2008-12-22 | 주식회사 동부하이텍 | 수직형 씨모스 이미지 센서 제조 방법 |
CN107154380B (zh) * | 2017-05-11 | 2020-04-24 | 上海华力微电子有限公司 | 一种金属互连结构的制备方法 |
JP7015218B2 (ja) * | 2018-06-28 | 2022-02-02 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US11081364B2 (en) * | 2019-02-06 | 2021-08-03 | Micron Technology, Inc. | Reduction of crystal growth resulting from annealing a conductive material |
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JPH0740587B2 (ja) * | 1985-12-26 | 1995-05-01 | 松下電子工業株式会社 | 半導体装置の製造方法 |
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2004
- 2004-11-24 KR KR1020040097157A patent/KR100567531B1/ko not_active IP Right Cessation
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- 2005-05-25 JP JP2005152125A patent/JP5051409B2/ja not_active Expired - Fee Related
- 2005-06-20 DE DE102005028629A patent/DE102005028629A1/de not_active Withdrawn
- 2005-06-21 TW TW094120682A patent/TWI311795B/zh not_active IP Right Cessation
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DE102005028629A1 (de) | 2006-06-01 |
JP2006148046A (ja) | 2006-06-08 |
US20060108689A1 (en) | 2006-05-25 |
TWI311795B (en) | 2009-07-01 |
KR100567531B1 (ko) | 2006-04-03 |
US7479453B2 (en) | 2009-01-20 |
TW200625525A (en) | 2006-07-16 |
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