JP4909087B2 - エンハンスメント型ｉｉｉ族窒化物デバイス - Google Patents

エンハンスメント型ｉｉｉ族窒化物デバイス Download PDF

Info

Publication number
JP4909087B2
JP4909087B2 JP2006551390A JP2006551390A JP4909087B2 JP 4909087 B2 JP4909087 B2 JP 4909087B2 JP 2006551390 A JP2006551390 A JP 2006551390A JP 2006551390 A JP2006551390 A JP 2006551390A JP 4909087 B2 JP4909087 B2 JP 4909087B2
Authority
JP
Japan
Prior art keywords
nitride
iii
current
channel
gate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2006551390A
Other languages
English (en)
Japanese (ja)
Other versions
JP2007534163A (ja
Inventor
ビーチ ロバート
Original Assignee
インターナショナル レクティフィアー コーポレイション
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by インターナショナル レクティフィアー コーポレイション filed Critical インターナショナル レクティフィアー コーポレイション
Publication of JP2007534163A publication Critical patent/JP2007534163A/ja
Application granted granted Critical
Publication of JP4909087B2 publication Critical patent/JP4909087B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/015—Manufacture or treatment of FETs having heterojunction interface channels or heterojunction gate electrodes, e.g. HEMT
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/40—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels
    • H10D30/47—FETs having zero-dimensional [0D], one-dimensional [1D] or two-dimensional [2D] charge carrier gas channels having two-dimensional [2D] charge carrier gas channels, e.g. nanoribbon FETs or high electron mobility transistors [HEMT]
    • H10D30/471—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT]
    • H10D30/475—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs
    • H10D30/4755—High electron mobility transistors [HEMT] or high hole mobility transistors [HHMT] having wider bandgap layer formed on top of lower bandgap active layer, e.g. undoped barrier HEMTs such as i-AlGaN/GaN HEMTs having wide bandgap charge-carrier supplying layers, e.g. modulation doped HEMTs such as n-AlGaAs/GaAs HEMTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/50—Physical imperfections
    • H10D62/53—Physical imperfections the imperfections being within the semiconductor body 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/343—Gate regions of field-effect devices having PN junction gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H10D62/8503—Nitride Group III-V materials, e.g. AlN or GaN

Landscapes

  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2006551390A 2004-01-23 2005-01-24 エンハンスメント型ｉｉｉ族窒化物デバイス Expired - Fee Related JP4909087B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US53879504P 2004-01-23 2004-01-23
US60/538,795 2004-01-23
US11/040,657 US7382001B2 (en) 2004-01-23 2005-01-21 Enhancement mode III-nitride FET
US11/040,657 2005-01-21
PCT/US2005/002267 WO2005070009A2 (en) 2004-01-23 2005-01-24 Enhancement mode iii-nitride fet

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2008208677A Division JP2008270847A (ja) 2004-01-23 2008-08-13 半導体デバイスの製造方法

Publications (2)

Publication Number Publication Date
JP2007534163A JP2007534163A (ja) 2007-11-22
JP4909087B2 true JP4909087B2 (ja) 2012-04-04

Family

ID=34810540

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2006551390A Expired - Fee Related JP4909087B2 (ja) 2004-01-23 2005-01-24 エンハンスメント型ｉｉｉ族窒化物デバイス
JP2008208677A Pending JP2008270847A (ja) 2004-01-23 2008-08-13 半導体デバイスの製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2008208677A Pending JP2008270847A (ja) 2004-01-23 2008-08-13 半導体デバイスの製造方法

Country Status (7)

Country Link
US (4) US7382001B2 (https=)
JP (2) JP4909087B2 (https=)
KR (1) KR100796043B1 (https=)
CN (1) CN101273458B (https=)
DE (1) DE112005000223T5 (https=)
TW (1) TWI257172B (https=)
WO (1) WO2005070009A2 (https=)

Families Citing this family (172)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
JP2005243727A (ja) * 2004-02-24 2005-09-08 Mitsubishi Electric Corp 半導体装置およびその製造方法
JP4744109B2 (ja) 2004-07-20 2011-08-10 トヨタ自動車株式会社 半導体装置とその製造方法
US7692298B2 (en) * 2004-09-30 2010-04-06 Sanken Electric Co., Ltd. III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact
JP4986406B2 (ja) * 2005-03-31 2012-07-25 住友電工デバイス・イノベーション株式会社 半導体装置の製造方法
JP4705412B2 (ja) * 2005-06-06 2011-06-22 パナソニック株式会社 電界効果トランジスタ及びその製造方法
JP4712459B2 (ja) * 2005-07-08 2011-06-29 パナソニック株式会社 トランジスタ及びその動作方法
US8183595B2 (en) * 2005-07-29 2012-05-22 International Rectifier Corporation Normally off III-nitride semiconductor device having a programmable gate
JP4751150B2 (ja) * 2005-08-31 2011-08-17 株式会社東芝 窒化物系半導体装置
JP2007095858A (ja) * 2005-09-28 2007-04-12 Toshiba Ceramics Co Ltd 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス
JP2007149794A (ja) * 2005-11-25 2007-06-14 Matsushita Electric Ind Co Ltd 電界効果トランジスタ
US8044432B2 (en) * 2005-11-29 2011-10-25 The Hong Kong University Of Science And Technology Low density drain HEMTs
US7932539B2 (en) * 2005-11-29 2011-04-26 The Hong Kong University Of Science And Technology Enhancement-mode III-N devices, circuits, and methods
US7972915B2 (en) * 2005-11-29 2011-07-05 The Hong Kong University Of Science And Technology Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs
JP4705481B2 (ja) * 2006-01-25 2011-06-22 パナソニック株式会社 窒化物半導体装置
JP4705482B2 (ja) * 2006-01-27 2011-06-22 パナソニック株式会社 トランジスタ
JP2007220895A (ja) * 2006-02-16 2007-08-30 Matsushita Electric Ind Co Ltd 窒化物半導体装置およびその製造方法
DE112007000667T5 (de) * 2006-03-20 2009-01-29 International Rectifier Corp., El Segundo Vereinigter Gate-Kaskoden-Transistor
US7408208B2 (en) * 2006-03-20 2008-08-05 International Rectifier Corporation III-nitride power semiconductor device
JP5147197B2 (ja) * 2006-06-06 2013-02-20 パナソニック株式会社 トランジスタ
US8399911B2 (en) * 2006-06-07 2013-03-19 Imec Enhancement mode field effect device and the method of production thereof
JP2007329350A (ja) * 2006-06-08 2007-12-20 Matsushita Electric Ind Co Ltd 半導体装置
US7541640B2 (en) * 2006-06-21 2009-06-02 Flextronics International Usa, Inc. Vertical field-effect transistor and method of forming the same
JP5036233B2 (ja) * 2006-07-06 2012-09-26 シャープ株式会社 半導体スイッチング素子および半導体回路装置
JP5228291B2 (ja) * 2006-07-06 2013-07-03 日産自動車株式会社 半導体装置の製造方法
US7504679B2 (en) * 2006-07-20 2009-03-17 International Rectifier Corporation Enhancement mode GaN FET with piezoelectric gate
JP4755961B2 (ja) * 2006-09-29 2011-08-24 パナソニック株式会社 窒化物半導体装置及びその製造方法
JP5126733B2 (ja) * 2006-09-29 2013-01-23 独立行政法人産業技術総合研究所 電界効果トランジスタ及びその製造方法
JP5186096B2 (ja) 2006-10-12 2013-04-17 パナソニック株式会社 窒化物半導体トランジスタ及びその製造方法
JP5261923B2 (ja) * 2006-10-17 2013-08-14 サンケン電気株式会社 化合物半導体素子
CN101976684B (zh) * 2006-11-20 2014-02-12 松下电器产业株式会社 半导体装置及其驱动方法
US7863877B2 (en) * 2006-12-11 2011-01-04 International Rectifier Corporation Monolithically integrated III-nitride power converter
JP2008153748A (ja) * 2006-12-14 2008-07-03 Matsushita Electric Ind Co Ltd 双方向スイッチ及び双方向スイッチの駆動方法
JP4712683B2 (ja) * 2006-12-21 2011-06-29 パナソニック株式会社 トランジスタおよびその製造方法
JP2008211172A (ja) * 2007-01-31 2008-09-11 Matsushita Electric Ind Co Ltd 半導体装置および半導体装置の製造方法
US7838904B2 (en) * 2007-01-31 2010-11-23 Panasonic Corporation Nitride based semiconductor device with concave gate region
US20080203433A1 (en) * 2007-02-27 2008-08-28 Sanken Electric Co., Ltd. High electron mobility transistor and method of forming the same
US8455920B2 (en) * 2007-05-23 2013-06-04 International Rectifier Corporation III-nitride heterojunction device
US8148718B2 (en) * 2007-05-31 2012-04-03 The Regents Of The University Of California Low voltage transistors
JPWO2009001529A1 (ja) * 2007-06-22 2010-08-26 パナソニック株式会社 プラズマディスプレイパネル駆動装置及びプラズマディスプレイ
US20090050939A1 (en) 2007-07-17 2009-02-26 Briere Michael A Iii-nitride device
TWI460857B (zh) * 2007-08-03 2014-11-11 香港科技大學 可靠之常關型iii族－氮化物主動裝置結構，以及相關方法與系統
JP4775859B2 (ja) * 2007-08-24 2011-09-21 シャープ株式会社 窒化物半導体装置とそれを含む電力変換装置
JP4514063B2 (ja) * 2007-08-30 2010-07-28 古河電気工業株式会社 Ｅｄ型インバータ回路および集積回路素子
JP5767811B2 (ja) * 2007-09-12 2015-08-19 トランスフォーム インコーポレイテッドＴｒａｎｓｐｈｏｒｍ Ｉｎｃ． Ｉｉｉ族窒化物双方向スイッチ
US20090072269A1 (en) * 2007-09-17 2009-03-19 Chang Soo Suh Gallium nitride diodes and integrated components
JP2009071220A (ja) * 2007-09-18 2009-04-02 Toyoda Gosei Co Ltd Ｉｉｉ族窒化物系化合物半導体発光素子
US7999288B2 (en) 2007-11-26 2011-08-16 International Rectifier Corporation High voltage durability III-nitride semiconductor device
FR2924271B1 (fr) 2007-11-27 2010-09-03 Picogiga Internat Dispositif electronique a champ electrique controle
JP5433214B2 (ja) * 2007-12-07 2014-03-05 パナソニック株式会社 モータ駆動回路
JP5032965B2 (ja) * 2007-12-10 2012-09-26 パナソニック株式会社 窒化物半導体トランジスタ及びその製造方法
JP2009164158A (ja) * 2007-12-28 2009-07-23 Panasonic Corp 半導体装置及びその製造方法
US8063616B2 (en) * 2008-01-11 2011-11-22 International Rectifier Corporation Integrated III-nitride power converter circuit
US9048302B2 (en) * 2008-01-11 2015-06-02 The Furukawa Electric Co., Ltd Field effect transistor having semiconductor operating layer formed with an inclined side wall
US8659275B2 (en) * 2008-01-11 2014-02-25 International Rectifier Corporation Highly efficient III-nitride power conversion circuit
US7965126B2 (en) 2008-02-12 2011-06-21 Transphorm Inc. Bridge circuits and their components
US8076699B2 (en) * 2008-04-02 2011-12-13 The Hong Kong Univ. Of Science And Technology Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems
US8519438B2 (en) 2008-04-23 2013-08-27 Transphorm Inc. Enhancement mode III-N HEMTs
US8289065B2 (en) 2008-09-23 2012-10-16 Transphorm Inc. Inductive load power switching circuits
US20100084687A1 (en) * 2008-10-03 2010-04-08 The Hong Kong University Of Science And Technology Aluminum gallium nitride/gallium nitride high electron mobility transistors
US7898004B2 (en) 2008-12-10 2011-03-01 Transphorm Inc. Semiconductor heterostructure diodes
JP5597921B2 (ja) * 2008-12-22 2014-10-01 サンケン電気株式会社 半導体装置
JP5487615B2 (ja) * 2008-12-24 2014-05-07 サンケン電気株式会社 電界効果半導体装置及びその製造方法
EP2380198A1 (de) * 2009-01-07 2011-10-26 Microgan Gmbh Selbstsperrender schalter
JP2010238752A (ja) * 2009-03-30 2010-10-21 Mitsubishi Electric Corp 半導体装置及びその製造方法
JP5564815B2 (ja) * 2009-03-31 2014-08-06 サンケン電気株式会社 半導体装置及び半導体装置の製造方法
US8742459B2 (en) 2009-05-14 2014-06-03 Transphorm Inc. High voltage III-nitride semiconductor devices
JP5595685B2 (ja) * 2009-07-28 2014-09-24 パナソニック株式会社 半導体装置
US8728884B1 (en) * 2009-07-28 2014-05-20 Hrl Laboratories, Llc Enhancement mode normally-off gallium nitride heterostructure field effect transistor
US8390000B2 (en) 2009-08-28 2013-03-05 Transphorm Inc. Semiconductor devices with field plates
JP5530682B2 (ja) * 2009-09-03 2014-06-25 パナソニック株式会社 窒化物半導体装置
KR101632314B1 (ko) * 2009-09-11 2016-06-22 삼성전자주식회사 전계 효과형 반도체 소자 및 그 제조 방법
KR20110032845A (ko) 2009-09-24 2011-03-30 삼성전자주식회사 전력 전자소자 및 그 제조방법
US8138529B2 (en) * 2009-11-02 2012-03-20 Transphorm Inc. Package configurations for low EMI circuits
US8389977B2 (en) 2009-12-10 2013-03-05 Transphorm Inc. Reverse side engineered III-nitride devices
US8816497B2 (en) * 2010-01-08 2014-08-26 Transphorm Inc. Electronic devices and components for high efficiency power circuits
US8802516B2 (en) * 2010-01-27 2014-08-12 National Semiconductor Corporation Normally-off gallium nitride-based semiconductor devices
US8624662B2 (en) * 2010-02-05 2014-01-07 Transphorm Inc. Semiconductor electronic components and circuits
JP2011171640A (ja) * 2010-02-22 2011-09-01 Sanken Electric Co Ltd 窒化物半導体装置及びその製造方法
JP5895170B2 (ja) 2010-02-23 2016-03-30 パナソニックＩｐマネジメント株式会社 ２線式交流スイッチ
US20110210377A1 (en) 2010-02-26 2011-09-01 Infineon Technologies Austria Ag Nitride semiconductor device
US9105703B2 (en) 2010-03-22 2015-08-11 International Rectifier Corporation Programmable III-nitride transistor with aluminum-doped gate
JP5666157B2 (ja) * 2010-03-26 2015-02-12 パナソニック株式会社 双方向スイッチ素子及びそれを用いた双方向スイッチ回路
US9263439B2 (en) * 2010-05-24 2016-02-16 Infineon Technologies Americas Corp. III-nitride switching device with an emulated diode
JP5776143B2 (ja) * 2010-07-06 2015-09-09 サンケン電気株式会社 半導体装置
JP5751404B2 (ja) * 2010-08-23 2015-07-22 サンケン電気株式会社 半導体装置
JP5884067B2 (ja) * 2010-09-15 2016-03-15 パナソニックＩｐマネジメント株式会社 直流接続装置
US8853709B2 (en) 2011-07-29 2014-10-07 Hrl Laboratories, Llc III-nitride metal insulator semiconductor field effect transistor
US8124505B1 (en) * 2010-10-21 2012-02-28 Hrl Laboratories, Llc Two stage plasma etching method for enhancement mode GaN HFET
KR102065115B1 (ko) * 2010-11-05 2020-01-13 삼성전자주식회사 Ｅ-모드를 갖는 고 전자 이동도 트랜지스터 및 그 제조방법
KR101204609B1 (ko) * 2010-12-09 2012-11-23 삼성전기주식회사 질화물계 반도체 소자
US8742460B2 (en) * 2010-12-15 2014-06-03 Transphorm Inc. Transistors with isolation regions
KR101991036B1 (ko) 2011-01-31 2019-06-19 이피션트 파워 컨버젼 코퍼레이션 갈륨 나이트라이드 트랜지스터에 대한 이온주입 및 자기정합형 게이트 구조
US8643062B2 (en) 2011-02-02 2014-02-04 Transphorm Inc. III-N device structures and methods
US8786327B2 (en) 2011-02-28 2014-07-22 Transphorm Inc. Electronic components with reactive filters
US8957454B2 (en) 2011-03-03 2015-02-17 International Rectifier Corporation III-Nitride semiconductor structures with strain absorbing interlayer transition modules
US8772842B2 (en) 2011-03-04 2014-07-08 Transphorm, Inc. Semiconductor diodes with low reverse bias currents
US8716141B2 (en) 2011-03-04 2014-05-06 Transphorm Inc. Electrode configurations for semiconductor devices
US20120274366A1 (en) 2011-04-28 2012-11-01 International Rectifier Corporation Integrated Power Stage
US8546849B2 (en) 2011-05-04 2013-10-01 International Rectifier Corporation High voltage cascoded III-nitride rectifier package utilizing clips on package surface
US8853706B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with stamped leadframe
US8853707B2 (en) 2011-05-04 2014-10-07 International Rectifier Corporation High voltage cascoded III-nitride rectifier package with etched leadframe
US9281388B2 (en) 2011-07-15 2016-03-08 Infineon Technologies Americas Corp. Composite semiconductor device with a SOI substrate having an integrated diode
US9087812B2 (en) 2011-07-15 2015-07-21 International Rectifier Corporation Composite semiconductor device with integrated diode
US8941118B1 (en) 2011-07-29 2015-01-27 Hrl Laboratories, Llc Normally-off III-nitride transistors with high threshold-voltage and low on-resistance
JP5985162B2 (ja) * 2011-08-15 2016-09-06 富士電機株式会社 窒化物系半導体装置
US8901604B2 (en) 2011-09-06 2014-12-02 Transphorm Inc. Semiconductor devices with guard rings
US9257547B2 (en) 2011-09-13 2016-02-09 Transphorm Inc. III-N device structures having a non-insulating substrate
US8796738B2 (en) 2011-09-21 2014-08-05 International Rectifier Corporation Group III-V device structure having a selectively reduced impurity concentration
JP5784441B2 (ja) * 2011-09-28 2015-09-24 トランスフォーム・ジャパン株式会社 半導体装置及び半導体装置の製造方法
US8598937B2 (en) 2011-10-07 2013-12-03 Transphorm Inc. High power semiconductor electronic components with increased reliability
US9209176B2 (en) 2011-12-07 2015-12-08 Transphorm Inc. Semiconductor modules and methods of forming the same
EP2608269A1 (en) * 2011-12-23 2013-06-26 Imec Quantum well transistor, method for making such a quantum well transistor and use of such a quantum well transistor
JP5883331B2 (ja) * 2012-01-25 2016-03-15 住友化学株式会社 窒化物半導体エピタキシャルウェハの製造方法及び電界効果型窒化物トランジスタの製造方法
US9165766B2 (en) 2012-02-03 2015-10-20 Transphorm Inc. Buffer layer structures suited for III-nitride devices with foreign substrates
US8648643B2 (en) 2012-02-24 2014-02-11 Transphorm Inc. Semiconductor power modules and devices
JP6054620B2 (ja) * 2012-03-29 2016-12-27 トランスフォーム・ジャパン株式会社 化合物半導体装置及びその製造方法
WO2013155108A1 (en) 2012-04-09 2013-10-17 Transphorm Inc. N-polar iii-nitride transistors
US9337332B2 (en) 2012-04-25 2016-05-10 Hrl Laboratories, Llc III-Nitride insulating-gate transistors with passivation
US9184275B2 (en) 2012-06-27 2015-11-10 Transphorm Inc. Semiconductor devices with integrated hole collectors
US8803246B2 (en) 2012-07-16 2014-08-12 Transphorm Inc. Semiconductor electronic components with integrated current limiters
US9379102B2 (en) 2012-07-19 2016-06-28 Samsung Electronics Co., Ltd. Nitride-based semiconductor device
KR101927408B1 (ko) * 2012-07-20 2019-03-07 삼성전자주식회사 고전자 이동도 트랜지스터 및 그 제조방법
KR20140013247A (ko) * 2012-07-23 2014-02-05 삼성전자주식회사 질화물계 반도체 소자 및 그의 제조 방법
CN102881716A (zh) * 2012-09-27 2013-01-16 电子科技大学 一种场致隧穿增强型hemt器件
JP6091941B2 (ja) * 2012-09-27 2017-03-08 ルネサスエレクトロニクス株式会社 半導体装置
US9484418B2 (en) 2012-11-19 2016-11-01 Delta Electronics, Inc. Semiconductor device
FR2998709B1 (fr) * 2012-11-26 2015-01-16 Commissariat Energie Atomique Procede de fabrication d'un transistor a heterojonction de type normalement bloque
FR2998713B1 (fr) * 2012-11-26 2015-01-16 Commissariat Energie Atomique Transistor bidirectionnel en courant a haute mobilite electronique optimise
DE102012223833A1 (de) 2012-12-19 2014-06-26 Robert Bosch Gmbh Bidirektional sperrender Halbleiterschalter und zugehörige Leistungsschaltstufe in einem Fahrzeug
US9093530B2 (en) * 2012-12-28 2015-07-28 Taiwan Semiconductor Manufacturing Company, Ltd. Fin structure of FinFET
JP6522521B2 (ja) 2013-02-15 2019-05-29 トランスフォーム インコーポレーテッド 半導体デバイスの電極及びその製造方法
US9087718B2 (en) 2013-03-13 2015-07-21 Transphorm Inc. Enhancement-mode III-nitride devices
US9245992B2 (en) 2013-03-15 2016-01-26 Transphorm Inc. Carbon doping semiconductor devices
US9059076B2 (en) 2013-04-01 2015-06-16 Transphorm Inc. Gate drivers for circuits based on semiconductor devices
JP6111821B2 (ja) 2013-04-25 2017-04-12 三菱電機株式会社 電界効果トランジスタ
JP6326638B2 (ja) 2013-04-25 2018-05-23 パナソニックＩｐマネジメント株式会社 半導体装置
EP2799852A1 (en) * 2013-04-29 2014-11-05 Stichting IMEC Nederland 2DEG-based sensor and device for ECG sensing
FR3005202B1 (fr) * 2013-04-30 2016-10-14 Commissariat Energie Atomique Procede de formation d'une zone implantee pour un transistor a heterojonction de type normalement bloque
US9704959B2 (en) 2013-05-21 2017-07-11 Massachusetts Institute Of Technology Enhancement-mode transistors with increased threshold voltage
WO2015006111A1 (en) 2013-07-09 2015-01-15 Transphorm Inc. Multilevel inverters and their components
US9443938B2 (en) 2013-07-19 2016-09-13 Transphorm Inc. III-nitride transistor including a p-type depleting layer
FR3011981B1 (fr) * 2013-10-11 2018-03-02 Centre National De La Recherche Scientifique - Cnrs - Transistor hemt a base d'heterojonction
JP5742912B2 (ja) * 2013-10-25 2015-07-01 富士通株式会社 化合物半導体装置及びその製造方法
KR102163725B1 (ko) * 2013-12-03 2020-10-08 삼성전자주식회사 반도체 소자 및 그 제조방법
US9123791B2 (en) 2014-01-09 2015-09-01 Infineon Technologies Austria Ag Semiconductor device and method
US10276712B2 (en) 2014-05-29 2019-04-30 Hrl Laboratories, Llc III-nitride field-effect transistor with dual gates
CN104091835A (zh) * 2014-06-17 2014-10-08 中国科学院半导体研究所 一种氮化镓异质结肖特基二极管及其制备方法
US9543940B2 (en) 2014-07-03 2017-01-10 Transphorm Inc. Switching circuits having ferrite beads
US9590494B1 (en) 2014-07-17 2017-03-07 Transphorm Inc. Bridgeless power factor correction circuits
US9318593B2 (en) 2014-07-21 2016-04-19 Transphorm Inc. Forming enhancement mode III-nitride devices
US9536967B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Recessed ohmic contacts in a III-N device
US9536966B2 (en) 2014-12-16 2017-01-03 Transphorm Inc. Gate structures for III-N devices
JP6637065B2 (ja) 2015-03-13 2020-01-29 トランスフォーム インコーポレーテッド 高電力回路のためのスイッチングデバイスの並列化
US9812532B1 (en) 2015-08-28 2017-11-07 Hrl Laboratories, Llc III-nitride P-channel transistor
US9871067B2 (en) * 2015-11-17 2018-01-16 Taiwan Semiconductor Manufacturing Co., Ltd. Infrared image sensor component
CN108292678B (zh) 2015-11-19 2021-07-06 Hrl实验室有限责任公司 具有双栅极的iii族氮化物场效应晶体管
US11322599B2 (en) 2016-01-15 2022-05-03 Transphorm Technology, Inc. Enhancement mode III-nitride devices having an Al1-xSixO gate insulator
US10224401B2 (en) 2016-05-31 2019-03-05 Transphorm Inc. III-nitride devices including a graded depleting layer
US10319648B2 (en) 2017-04-17 2019-06-11 Transphorm Inc. Conditions for burn-in of high power semiconductors
US10332876B2 (en) 2017-09-14 2019-06-25 Infineon Technologies Austria Ag Method of forming compound semiconductor body
US10879368B2 (en) * 2017-10-17 2020-12-29 Mitsubishi Electric Research Laboratories, Inc. Transistor with multi-metal gate
US10833063B2 (en) * 2018-07-25 2020-11-10 Vishay SIliconix, LLC High electron mobility transistor ESD protection structures
CN109461655B (zh) * 2018-09-21 2022-03-11 中国电子科技集团公司第五十五研究所 具有多栅结构的氮化物高电子迁移率晶体管制造方法
CN117334738A (zh) * 2019-04-12 2024-01-02 广东致能科技有限公司 一种半导体器件及其制造方法
TWI811394B (zh) * 2019-07-09 2023-08-11 聯華電子股份有限公司 高電子遷移率電晶體及其製作方法
CN117976706A (zh) * 2019-09-17 2024-05-03 联华电子股份有限公司 高电子迁移率晶体管
US12218202B2 (en) * 2021-09-16 2025-02-04 Wolfspeed, Inc. Semiconductor device incorporating a substrate recess
JPWO2023189039A1 (https=) * 2022-03-30 2023-10-05
TW202410448A (zh) 2022-08-29 2024-03-01 聯華電子股份有限公司 半導體裝置以及其製作方法
KR102787588B1 (ko) * 2023-02-15 2025-04-02 알에프에이치아이씨 주식회사 리세스 산화피막을 구비한 고전자이동도 트랜지스터 및 그 제조방법
KR102824246B1 (ko) * 2023-12-28 2025-06-24 서울대학교산학협력단 모노리식 산화공정을 이용한 변조도핑 기반의 고이동도 반도체 소자 및 그 제조 방법

Family Cites Families (35)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4615102A (en) * 1984-05-01 1986-10-07 Fujitsu Limited Method of producing enhancement mode and depletion mode FETs
JPH0194676A (ja) * 1987-10-06 1989-04-13 Nec Corp 半導体装置及びその製造方法
JPH03196532A (ja) * 1989-12-25 1991-08-28 Mitsubishi Electric Corp 電界効果トランジスタとその製造方法
US5349214A (en) * 1993-09-13 1994-09-20 Motorola, Inc. Complementary heterojunction device
US5411902A (en) * 1994-06-06 1995-05-02 The United States Of America As Represented By The Secretary Of The Air Force Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer
JPH10223901A (ja) * 1996-12-04 1998-08-21 Sony Corp 電界効果型トランジスタおよびその製造方法
EP0974160A1 (en) * 1998-02-09 2000-01-26 Koninklijke Philips Electronics N.V. Process of manufacturing a semiconductor device including a buried channel field effect transistor
US6107649A (en) * 1998-06-10 2000-08-22 Rutgers, The State University Field-controlled high-power semiconductor devices
JP2000195871A (ja) * 1998-12-28 2000-07-14 Sony Corp 半導体装置とその製造方法
JP2000277724A (ja) * 1999-03-26 2000-10-06 Nagoya Kogyo Univ 電界効果トランジスタとそれを備えた半導体装置及びその製造方法
US6342411B1 (en) * 1999-09-03 2002-01-29 Motorola Inc. Electronic component and method for manufacture
US6586781B2 (en) * 2000-02-04 2003-07-01 Cree Lighting Company Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same
JP3751791B2 (ja) * 2000-03-28 2006-03-01 日本電気株式会社 ヘテロ接合電界効果トランジスタ
US6521961B1 (en) * 2000-04-28 2003-02-18 Motorola, Inc. Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor
JP4186032B2 (ja) * 2000-06-29 2008-11-26 日本電気株式会社 半導体装置
JP4022708B2 (ja) * 2000-06-29 2007-12-19 日本電気株式会社 半導体装置
US6515316B1 (en) * 2000-07-14 2003-02-04 Trw Inc. Partially relaxed channel HEMT device
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
AU2001288239A1 (en) * 2000-08-10 2002-02-25 Walter David Braddock Iv Integrated transistor devices
US6690042B2 (en) * 2000-09-27 2004-02-10 Sensor Electronic Technology, Inc. Metal oxide semiconductor heterostructure field effect transistor
JP4220683B2 (ja) * 2001-03-27 2009-02-04 パナソニック株式会社 半導体装置
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US6646293B2 (en) * 2001-07-18 2003-11-11 Motorola, Inc. Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates
AU2002359628A1 (en) * 2001-12-06 2003-06-23 Hrl Laboratories, Llc High power-low noise microwave gan heterojunction field effet transistor
WO2003071607A1 (en) * 2002-02-21 2003-08-28 The Furukawa Electric Co., Ltd. GaN FIELD-EFFECT TRANSISTOR
JP3951743B2 (ja) 2002-02-28 2007-08-01 松下電器産業株式会社 半導体装置およびその製造方法
JP3733420B2 (ja) 2002-03-01 2006-01-11 独立行政法人産業技術総合研究所 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ
US20040021152A1 (en) * 2002-08-05 2004-02-05 Chanh Nguyen Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate
US6830945B2 (en) * 2002-09-16 2004-12-14 Hrl Laboratories, Llc Method for fabricating a non-planar nitride-based heterostructure field effect transistor
JP4479222B2 (ja) * 2002-11-22 2010-06-09 沖電気工業株式会社 化合物半導体層の表面処理方法及び半導体装置の製造方法
JP2004273486A (ja) * 2003-03-05 2004-09-30 Mitsubishi Electric Corp 半導体装置およびその製造方法
US7449728B2 (en) * 2003-11-24 2008-11-11 Tri Quint Semiconductor, Inc. Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same
US7045404B2 (en) * 2004-01-16 2006-05-16 Cree, Inc. Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof
US7465997B2 (en) * 2004-02-12 2008-12-16 International Rectifier Corporation III-nitride bidirectional switch
US7550781B2 (en) * 2004-02-12 2009-06-23 International Rectifier Corporation Integrated III-nitride power devices

Also Published As

Publication number Publication date
KR20060110003A (ko) 2006-10-23
US20140030858A1 (en) 2014-01-30
US20060060871A1 (en) 2006-03-23
WO2005070009A3 (en) 2007-11-22
US8871581B2 (en) 2014-10-28
JP2008270847A (ja) 2008-11-06
US20080248634A1 (en) 2008-10-09
TW200531277A (en) 2005-09-16
US7382001B2 (en) 2008-06-03
WO2005070009A2 (en) 2005-08-04
KR100796043B1 (ko) 2008-01-21
DE112005000223T5 (de) 2007-06-28
US20110275183A1 (en) 2011-11-10
CN101273458B (zh) 2010-09-08
US8546206B2 (en) 2013-10-01
JP2007534163A (ja) 2007-11-22
TWI257172B (en) 2006-06-21
CN101273458A (zh) 2008-09-24

Similar Documents

Publication Publication Date Title
JP4909087B2 (ja) エンハンスメント型ｉｉｉ族窒化物デバイス
JP5044222B2 (ja) Ｉｉｉ族窒化物電流制御デバイスおよび製造方法
JP5281748B2 (ja) Ｉｉｉ族窒化物素子の不動態化およびその方法
US9837518B2 (en) Semiconductor device
JP4812292B2 (ja) トレンチ構造を有するｉｉｉ族窒化物半導体装置
JP5979819B2 (ja) アルミニウムドープゲートを備えるプログラマブルｉｉｉ−窒化物トランジスタ
CN101300669B (zh) 具有增强的绝缘结构的场效应晶体管
JP2010153493A (ja) 電界効果半導体装置及びその製造方法
CN103959474A (zh) 单片集成的垂直jfet和肖特基二极管
TW201737354A (zh) 半導體裝置，電子部件，電子設備及用於製造半導體裝置之方法
JP2023503944A (ja) Ｉｉｉ族窒化物半導体集積回路構造、その製造方法および使用
CN112490278B (zh) 具有减少的缺陷的半导体外延结构
CN120343944B (zh) 半导体器件及其制备方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20080509

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080513

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080813

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20081031

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20090114

RD13 Notification of appointment of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7433

Effective date: 20090115

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A821

Effective date: 20090115

A911 Transfer to examiner for re-examination before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20090220

A912 Re-examination (zenchi) completed and case transferred to appeal board

Free format text: JAPANESE INTERMEDIATE CODE: A912

Effective date: 20090313

RD02 Notification of acceptance of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7422

Effective date: 20100416

RD04 Notification of resignation of power of attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7424

Effective date: 20100428

RD15 Notification of revocation of power of sub attorney

Free format text: JAPANESE INTERMEDIATE CODE: A7435

Effective date: 20100428

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20101122

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20101126

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110210

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110216

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110314

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110317

A601 Written request for extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A601

Effective date: 20110812

A602 Written permission of extension of time

Free format text: JAPANESE INTERMEDIATE CODE: A602

Effective date: 20110817

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20111111

A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20120113

FPAY Renewal fee payment (event date is renewal date of database)

Free format text: PAYMENT UNTIL: 20150120

Year of fee payment: 3

R150 Certificate of patent or registration of utility model

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

LAPS Cancellation because of no payment of annual fees