TWI257172B - Enhancement mode III-nitride fet - Google Patents
Enhancement mode III-nitride fetInfo
- Publication number
- TWI257172B TWI257172B TW094102007A TW94102007A TWI257172B TW I257172 B TWI257172 B TW I257172B TW 094102007 A TW094102007 A TW 094102007A TW 94102007 A TW94102007 A TW 94102007A TW I257172 B TWI257172 B TW I257172B
- Authority
- TW
- Taiwan
- Prior art keywords
- gate
- enhancement mode
- contact
- gate electrode
- iii
- Prior art date
Links
- 239000000463 material Substances 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66431—Unipolar field-effect transistors with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/30—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface
- H01L29/32—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by physical imperfections; having polished or roughened surface the imperfections being within the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42356—Disposition, e.g. buried gate electrode
- H01L29/4236—Disposition, e.g. buried gate electrode within a trench, e.g. trench gate electrode, groove gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
- H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1066—Gate region of field-effect devices with PN junction gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/2003—Nitride compounds
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US53879504P | 2004-01-23 | 2004-01-23 | |
US11/040,657 US7382001B2 (en) | 2004-01-23 | 2005-01-21 | Enhancement mode III-nitride FET |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200531277A TW200531277A (en) | 2005-09-16 |
TWI257172B true TWI257172B (en) | 2006-06-21 |
Family
ID=34810540
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094102007A TWI257172B (en) | 2004-01-23 | 2005-01-24 | Enhancement mode III-nitride fet |
Country Status (7)
Country | Link |
---|---|
US (4) | US7382001B2 (zh) |
JP (2) | JP4909087B2 (zh) |
KR (1) | KR100796043B1 (zh) |
CN (1) | CN101273458B (zh) |
DE (1) | DE112005000223T5 (zh) |
TW (1) | TWI257172B (zh) |
WO (1) | WO2005070009A2 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI563790B (en) * | 2008-02-12 | 2016-12-21 | Transphorm Inc | Bridge circuits and method of operating the same |
Families Citing this family (167)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
JP2005243727A (ja) * | 2004-02-24 | 2005-09-08 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
JP4744109B2 (ja) * | 2004-07-20 | 2011-08-10 | トヨタ自動車株式会社 | 半導体装置とその製造方法 |
US7692298B2 (en) * | 2004-09-30 | 2010-04-06 | Sanken Electric Co., Ltd. | III-V nitride semiconductor device comprising a concave shottky contact and an ohmic contact |
JP4986406B2 (ja) * | 2005-03-31 | 2012-07-25 | 住友電工デバイス・イノベーション株式会社 | 半導体装置の製造方法 |
JP4705412B2 (ja) * | 2005-06-06 | 2011-06-22 | パナソニック株式会社 | 電界効果トランジスタ及びその製造方法 |
JP4712459B2 (ja) * | 2005-07-08 | 2011-06-29 | パナソニック株式会社 | トランジスタ及びその動作方法 |
US8183595B2 (en) * | 2005-07-29 | 2012-05-22 | International Rectifier Corporation | Normally off III-nitride semiconductor device having a programmable gate |
JP4751150B2 (ja) * | 2005-08-31 | 2011-08-17 | 株式会社東芝 | 窒化物系半導体装置 |
JP2007095858A (ja) * | 2005-09-28 | 2007-04-12 | Toshiba Ceramics Co Ltd | 化合物半導体デバイス用基板およびそれを用いた化合物半導体デバイス |
JP2007149794A (ja) * | 2005-11-25 | 2007-06-14 | Matsushita Electric Ind Co Ltd | 電界効果トランジスタ |
US8044432B2 (en) * | 2005-11-29 | 2011-10-25 | The Hong Kong University Of Science And Technology | Low density drain HEMTs |
US7932539B2 (en) * | 2005-11-29 | 2011-04-26 | The Hong Kong University Of Science And Technology | Enhancement-mode III-N devices, circuits, and methods |
US7972915B2 (en) * | 2005-11-29 | 2011-07-05 | The Hong Kong University Of Science And Technology | Monolithic integration of enhancement- and depletion-mode AlGaN/GaN HFETs |
JP4705481B2 (ja) * | 2006-01-25 | 2011-06-22 | パナソニック株式会社 | 窒化物半導体装置 |
JP4705482B2 (ja) * | 2006-01-27 | 2011-06-22 | パナソニック株式会社 | トランジスタ |
JP2007220895A (ja) * | 2006-02-16 | 2007-08-30 | Matsushita Electric Ind Co Ltd | 窒化物半導体装置およびその製造方法 |
DE112007000667T5 (de) * | 2006-03-20 | 2009-01-29 | International Rectifier Corp., El Segundo | Vereinigter Gate-Kaskoden-Transistor |
US7408208B2 (en) * | 2006-03-20 | 2008-08-05 | International Rectifier Corporation | III-nitride power semiconductor device |
JP5147197B2 (ja) * | 2006-06-06 | 2013-02-20 | パナソニック株式会社 | トランジスタ |
US8399911B2 (en) * | 2006-06-07 | 2013-03-19 | Imec | Enhancement mode field effect device and the method of production thereof |
JP2007329350A (ja) * | 2006-06-08 | 2007-12-20 | Matsushita Electric Ind Co Ltd | 半導体装置 |
US7541640B2 (en) * | 2006-06-21 | 2009-06-02 | Flextronics International Usa, Inc. | Vertical field-effect transistor and method of forming the same |
JP5228291B2 (ja) * | 2006-07-06 | 2013-07-03 | 日産自動車株式会社 | 半導体装置の製造方法 |
JP5036233B2 (ja) * | 2006-07-06 | 2012-09-26 | シャープ株式会社 | 半導体スイッチング素子および半導体回路装置 |
US7504679B2 (en) * | 2006-07-20 | 2009-03-17 | International Rectifier Corporation | Enhancement mode GaN FET with piezoelectric gate |
JP4755961B2 (ja) * | 2006-09-29 | 2011-08-24 | パナソニック株式会社 | 窒化物半導体装置及びその製造方法 |
JP5126733B2 (ja) * | 2006-09-29 | 2013-01-23 | 独立行政法人産業技術総合研究所 | 電界効果トランジスタ及びその製造方法 |
JP5186096B2 (ja) * | 2006-10-12 | 2013-04-17 | パナソニック株式会社 | 窒化物半導体トランジスタ及びその製造方法 |
JP5261923B2 (ja) * | 2006-10-17 | 2013-08-14 | サンケン電気株式会社 | 化合物半導体素子 |
USRE45989E1 (en) | 2006-11-20 | 2016-04-26 | Panasonic Corporation | Semiconductor device and method for driving the same |
US7863877B2 (en) * | 2006-12-11 | 2011-01-04 | International Rectifier Corporation | Monolithically integrated III-nitride power converter |
JP2008153748A (ja) * | 2006-12-14 | 2008-07-03 | Matsushita Electric Ind Co Ltd | 双方向スイッチ及び双方向スイッチの駆動方法 |
JP4712683B2 (ja) * | 2006-12-21 | 2011-06-29 | パナソニック株式会社 | トランジスタおよびその製造方法 |
US7838904B2 (en) * | 2007-01-31 | 2010-11-23 | Panasonic Corporation | Nitride based semiconductor device with concave gate region |
JP2008211172A (ja) * | 2007-01-31 | 2008-09-11 | Matsushita Electric Ind Co Ltd | 半導体装置および半導体装置の製造方法 |
US20080203433A1 (en) * | 2007-02-27 | 2008-08-28 | Sanken Electric Co., Ltd. | High electron mobility transistor and method of forming the same |
US8455920B2 (en) * | 2007-05-23 | 2013-06-04 | International Rectifier Corporation | III-nitride heterojunction device |
US8148718B2 (en) * | 2007-05-31 | 2012-04-03 | The Regents Of The University Of California | Low voltage transistors |
JPWO2009001529A1 (ja) * | 2007-06-22 | 2010-08-26 | パナソニック株式会社 | プラズマディスプレイパネル駆動装置及びプラズマディスプレイ |
US20090050939A1 (en) * | 2007-07-17 | 2009-02-26 | Briere Michael A | Iii-nitride device |
US8502323B2 (en) * | 2007-08-03 | 2013-08-06 | The Hong Kong University Of Science And Technology | Reliable normally-off III-nitride active device structures, and related methods and systems |
JP4775859B2 (ja) * | 2007-08-24 | 2011-09-21 | シャープ株式会社 | 窒化物半導体装置とそれを含む電力変換装置 |
JP4514063B2 (ja) * | 2007-08-30 | 2010-07-28 | 古河電気工業株式会社 | Ed型インバータ回路および集積回路素子 |
US7875907B2 (en) * | 2007-09-12 | 2011-01-25 | Transphorm Inc. | III-nitride bidirectional switches |
US20090072269A1 (en) * | 2007-09-17 | 2009-03-19 | Chang Soo Suh | Gallium nitride diodes and integrated components |
JP2009071220A (ja) * | 2007-09-18 | 2009-04-02 | Toyoda Gosei Co Ltd | Iii族窒化物系化合物半導体発光素子 |
US7999288B2 (en) | 2007-11-26 | 2011-08-16 | International Rectifier Corporation | High voltage durability III-nitride semiconductor device |
FR2924271B1 (fr) | 2007-11-27 | 2010-09-03 | Picogiga Internat | Dispositif electronique a champ electrique controle |
JP5433214B2 (ja) * | 2007-12-07 | 2014-03-05 | パナソニック株式会社 | モータ駆動回路 |
JP5032965B2 (ja) * | 2007-12-10 | 2012-09-26 | パナソニック株式会社 | 窒化物半導体トランジスタ及びその製造方法 |
JP2009164158A (ja) * | 2007-12-28 | 2009-07-23 | Panasonic Corp | 半導体装置及びその製造方法 |
US9048302B2 (en) * | 2008-01-11 | 2015-06-02 | The Furukawa Electric Co., Ltd | Field effect transistor having semiconductor operating layer formed with an inclined side wall |
US8659275B2 (en) * | 2008-01-11 | 2014-02-25 | International Rectifier Corporation | Highly efficient III-nitride power conversion circuit |
US8063616B2 (en) * | 2008-01-11 | 2011-11-22 | International Rectifier Corporation | Integrated III-nitride power converter circuit |
US8076699B2 (en) * | 2008-04-02 | 2011-12-13 | The Hong Kong Univ. Of Science And Technology | Integrated HEMT and lateral field-effect rectifier combinations, methods, and systems |
US8519438B2 (en) | 2008-04-23 | 2013-08-27 | Transphorm Inc. | Enhancement mode III-N HEMTs |
US8289065B2 (en) | 2008-09-23 | 2012-10-16 | Transphorm Inc. | Inductive load power switching circuits |
US20100084687A1 (en) * | 2008-10-03 | 2010-04-08 | The Hong Kong University Of Science And Technology | Aluminum gallium nitride/gallium nitride high electron mobility transistors |
US7898004B2 (en) | 2008-12-10 | 2011-03-01 | Transphorm Inc. | Semiconductor heterostructure diodes |
JP5597921B2 (ja) * | 2008-12-22 | 2014-10-01 | サンケン電気株式会社 | 半導体装置 |
JP5487615B2 (ja) * | 2008-12-24 | 2014-05-07 | サンケン電気株式会社 | 電界効果半導体装置及びその製造方法 |
WO2010081530A1 (de) * | 2009-01-07 | 2010-07-22 | Microgan Gmbh | Selbstsperrender schalter |
JP2010238752A (ja) * | 2009-03-30 | 2010-10-21 | Mitsubishi Electric Corp | 半導体装置及びその製造方法 |
JP5564815B2 (ja) * | 2009-03-31 | 2014-08-06 | サンケン電気株式会社 | 半導体装置及び半導体装置の製造方法 |
US8742459B2 (en) | 2009-05-14 | 2014-06-03 | Transphorm Inc. | High voltage III-nitride semiconductor devices |
JP5595685B2 (ja) * | 2009-07-28 | 2014-09-24 | パナソニック株式会社 | 半導体装置 |
US8728884B1 (en) * | 2009-07-28 | 2014-05-20 | Hrl Laboratories, Llc | Enhancement mode normally-off gallium nitride heterostructure field effect transistor |
US8390000B2 (en) | 2009-08-28 | 2013-03-05 | Transphorm Inc. | Semiconductor devices with field plates |
JP5530682B2 (ja) * | 2009-09-03 | 2014-06-25 | パナソニック株式会社 | 窒化物半導体装置 |
KR101632314B1 (ko) * | 2009-09-11 | 2016-06-22 | 삼성전자주식회사 | 전계 효과형 반도체 소자 및 그 제조 방법 |
KR20110032845A (ko) | 2009-09-24 | 2011-03-30 | 삼성전자주식회사 | 전력 전자소자 및 그 제조방법 |
US8138529B2 (en) * | 2009-11-02 | 2012-03-20 | Transphorm Inc. | Package configurations for low EMI circuits |
US8389977B2 (en) * | 2009-12-10 | 2013-03-05 | Transphorm Inc. | Reverse side engineered III-nitride devices |
US8816497B2 (en) * | 2010-01-08 | 2014-08-26 | Transphorm Inc. | Electronic devices and components for high efficiency power circuits |
US8802516B2 (en) * | 2010-01-27 | 2014-08-12 | National Semiconductor Corporation | Normally-off gallium nitride-based semiconductor devices |
US8624662B2 (en) * | 2010-02-05 | 2014-01-07 | Transphorm Inc. | Semiconductor electronic components and circuits |
JP2011171640A (ja) * | 2010-02-22 | 2011-09-01 | Sanken Electric Co Ltd | 窒化物半導体装置及びその製造方法 |
JP5895170B2 (ja) | 2010-02-23 | 2016-03-30 | パナソニックIpマネジメント株式会社 | 2線式交流スイッチ |
US20110210377A1 (en) | 2010-02-26 | 2011-09-01 | Infineon Technologies Austria Ag | Nitride semiconductor device |
US9105703B2 (en) | 2010-03-22 | 2015-08-11 | International Rectifier Corporation | Programmable III-nitride transistor with aluminum-doped gate |
JP5666157B2 (ja) * | 2010-03-26 | 2015-02-12 | パナソニック株式会社 | 双方向スイッチ素子及びそれを用いた双方向スイッチ回路 |
US9263439B2 (en) * | 2010-05-24 | 2016-02-16 | Infineon Technologies Americas Corp. | III-nitride switching device with an emulated diode |
JP5776143B2 (ja) * | 2010-07-06 | 2015-09-09 | サンケン電気株式会社 | 半導体装置 |
JP5751404B2 (ja) * | 2010-08-23 | 2015-07-22 | サンケン電気株式会社 | 半導体装置 |
JP5884067B2 (ja) * | 2010-09-15 | 2016-03-15 | パナソニックIpマネジメント株式会社 | 直流接続装置 |
US8124505B1 (en) * | 2010-10-21 | 2012-02-28 | Hrl Laboratories, Llc | Two stage plasma etching method for enhancement mode GaN HFET |
US8853709B2 (en) | 2011-07-29 | 2014-10-07 | Hrl Laboratories, Llc | III-nitride metal insulator semiconductor field effect transistor |
KR102065115B1 (ko) * | 2010-11-05 | 2020-01-13 | 삼성전자주식회사 | E-모드를 갖는 고 전자 이동도 트랜지스터 및 그 제조방법 |
KR101204609B1 (ko) * | 2010-12-09 | 2012-11-23 | 삼성전기주식회사 | 질화물계 반도체 소자 |
US8742460B2 (en) * | 2010-12-15 | 2014-06-03 | Transphorm Inc. | Transistors with isolation regions |
US8853749B2 (en) | 2011-01-31 | 2014-10-07 | Efficient Power Conversion Corporation | Ion implanted and self aligned gate structure for GaN transistors |
US8643062B2 (en) | 2011-02-02 | 2014-02-04 | Transphorm Inc. | III-N device structures and methods |
US8786327B2 (en) | 2011-02-28 | 2014-07-22 | Transphorm Inc. | Electronic components with reactive filters |
US8957454B2 (en) | 2011-03-03 | 2015-02-17 | International Rectifier Corporation | III-Nitride semiconductor structures with strain absorbing interlayer transition modules |
US8772842B2 (en) | 2011-03-04 | 2014-07-08 | Transphorm, Inc. | Semiconductor diodes with low reverse bias currents |
US8716141B2 (en) | 2011-03-04 | 2014-05-06 | Transphorm Inc. | Electrode configurations for semiconductor devices |
US20120274366A1 (en) | 2011-04-28 | 2012-11-01 | International Rectifier Corporation | Integrated Power Stage |
US8546849B2 (en) | 2011-05-04 | 2013-10-01 | International Rectifier Corporation | High voltage cascoded III-nitride rectifier package utilizing clips on package surface |
US8853706B2 (en) | 2011-05-04 | 2014-10-07 | International Rectifier Corporation | High voltage cascoded III-nitride rectifier package with stamped leadframe |
US8853707B2 (en) | 2011-05-04 | 2014-10-07 | International Rectifier Corporation | High voltage cascoded III-nitride rectifier package with etched leadframe |
US9087812B2 (en) | 2011-07-15 | 2015-07-21 | International Rectifier Corporation | Composite semiconductor device with integrated diode |
US9281388B2 (en) | 2011-07-15 | 2016-03-08 | Infineon Technologies Americas Corp. | Composite semiconductor device with a SOI substrate having an integrated diode |
JP5985162B2 (ja) * | 2011-08-15 | 2016-09-06 | 富士電機株式会社 | 窒化物系半導体装置 |
US8901604B2 (en) | 2011-09-06 | 2014-12-02 | Transphorm Inc. | Semiconductor devices with guard rings |
US9257547B2 (en) | 2011-09-13 | 2016-02-09 | Transphorm Inc. | III-N device structures having a non-insulating substrate |
US8796738B2 (en) | 2011-09-21 | 2014-08-05 | International Rectifier Corporation | Group III-V device structure having a selectively reduced impurity concentration |
JP5784441B2 (ja) * | 2011-09-28 | 2015-09-24 | トランスフォーム・ジャパン株式会社 | 半導体装置及び半導体装置の製造方法 |
US8598937B2 (en) | 2011-10-07 | 2013-12-03 | Transphorm Inc. | High power semiconductor electronic components with increased reliability |
US9209176B2 (en) | 2011-12-07 | 2015-12-08 | Transphorm Inc. | Semiconductor modules and methods of forming the same |
EP2608269A1 (en) * | 2011-12-23 | 2013-06-26 | Imec | Quantum well transistor, method for making such a quantum well transistor and use of such a quantum well transistor |
JP5883331B2 (ja) * | 2012-01-25 | 2016-03-15 | 住友化学株式会社 | 窒化物半導体エピタキシャルウェハの製造方法及び電界効果型窒化物トランジスタの製造方法 |
US9165766B2 (en) | 2012-02-03 | 2015-10-20 | Transphorm Inc. | Buffer layer structures suited for III-nitride devices with foreign substrates |
US8648643B2 (en) | 2012-02-24 | 2014-02-11 | Transphorm Inc. | Semiconductor power modules and devices |
JP6054620B2 (ja) * | 2012-03-29 | 2016-12-27 | トランスフォーム・ジャパン株式会社 | 化合物半導体装置及びその製造方法 |
US9093366B2 (en) | 2012-04-09 | 2015-07-28 | Transphorm Inc. | N-polar III-nitride transistors |
US9337332B2 (en) | 2012-04-25 | 2016-05-10 | Hrl Laboratories, Llc | III-Nitride insulating-gate transistors with passivation |
US9184275B2 (en) | 2012-06-27 | 2015-11-10 | Transphorm Inc. | Semiconductor devices with integrated hole collectors |
US8803246B2 (en) | 2012-07-16 | 2014-08-12 | Transphorm Inc. | Semiconductor electronic components with integrated current limiters |
US9379102B2 (en) | 2012-07-19 | 2016-06-28 | Samsung Electronics Co., Ltd. | Nitride-based semiconductor device |
KR101927408B1 (ko) * | 2012-07-20 | 2019-03-07 | 삼성전자주식회사 | 고전자 이동도 트랜지스터 및 그 제조방법 |
KR20140013247A (ko) * | 2012-07-23 | 2014-02-05 | 삼성전자주식회사 | 질화물계 반도체 소자 및 그의 제조 방법 |
JP6091941B2 (ja) * | 2012-09-27 | 2017-03-08 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN102881716A (zh) * | 2012-09-27 | 2013-01-16 | 电子科技大学 | 一种场致隧穿增强型hemt器件 |
CN103824845B (zh) | 2012-11-19 | 2017-08-29 | 台达电子工业股份有限公司 | 半导体装置 |
FR2998709B1 (fr) * | 2012-11-26 | 2015-01-16 | Commissariat Energie Atomique | Procede de fabrication d'un transistor a heterojonction de type normalement bloque |
FR2998713B1 (fr) * | 2012-11-26 | 2015-01-16 | Commissariat Energie Atomique | Transistor bidirectionnel en courant a haute mobilite electronique optimise |
DE102012223833A1 (de) | 2012-12-19 | 2014-06-26 | Robert Bosch Gmbh | Bidirektional sperrender Halbleiterschalter und zugehörige Leistungsschaltstufe in einem Fahrzeug |
US9093530B2 (en) * | 2012-12-28 | 2015-07-28 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin structure of FinFET |
US9171730B2 (en) | 2013-02-15 | 2015-10-27 | Transphorm Inc. | Electrodes for semiconductor devices and methods of forming the same |
US9087718B2 (en) | 2013-03-13 | 2015-07-21 | Transphorm Inc. | Enhancement-mode III-nitride devices |
US9245992B2 (en) | 2013-03-15 | 2016-01-26 | Transphorm Inc. | Carbon doping semiconductor devices |
US9059076B2 (en) | 2013-04-01 | 2015-06-16 | Transphorm Inc. | Gate drivers for circuits based on semiconductor devices |
JP6111821B2 (ja) * | 2013-04-25 | 2017-04-12 | 三菱電機株式会社 | 電界効果トランジスタ |
JP6326638B2 (ja) | 2013-04-25 | 2018-05-23 | パナソニックIpマネジメント株式会社 | 半導体装置 |
EP2799852A1 (en) * | 2013-04-29 | 2014-11-05 | Stichting IMEC Nederland | 2DEG-based sensor and device for ECG sensing |
FR3005202B1 (fr) * | 2013-04-30 | 2016-10-14 | Commissariat Energie Atomique | Procede de formation d'une zone implantee pour un transistor a heterojonction de type normalement bloque |
US9704959B2 (en) | 2013-05-21 | 2017-07-11 | Massachusetts Institute Of Technology | Enhancement-mode transistors with increased threshold voltage |
WO2015006111A1 (en) | 2013-07-09 | 2015-01-15 | Transphorm Inc. | Multilevel inverters and their components |
US9443938B2 (en) | 2013-07-19 | 2016-09-13 | Transphorm Inc. | III-nitride transistor including a p-type depleting layer |
CN105556678B (zh) | 2013-09-30 | 2018-04-10 | Hrl实验室有限责任公司 | 具有高阈值电压和低导通电阻的常关型iii族氮化物晶体管 |
FR3011981B1 (fr) * | 2013-10-11 | 2018-03-02 | Centre National De La Recherche Scientifique - Cnrs - | Transistor hemt a base d'heterojonction |
JP5742912B2 (ja) * | 2013-10-25 | 2015-07-01 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
KR102163725B1 (ko) * | 2013-12-03 | 2020-10-08 | 삼성전자주식회사 | 반도체 소자 및 그 제조방법 |
US9123791B2 (en) | 2014-01-09 | 2015-09-01 | Infineon Technologies Austria Ag | Semiconductor device and method |
US10276712B2 (en) | 2014-05-29 | 2019-04-30 | Hrl Laboratories, Llc | III-nitride field-effect transistor with dual gates |
CN104091835A (zh) * | 2014-06-17 | 2014-10-08 | 中国科学院半导体研究所 | 一种氮化镓异质结肖特基二极管及其制备方法 |
US9543940B2 (en) | 2014-07-03 | 2017-01-10 | Transphorm Inc. | Switching circuits having ferrite beads |
US9590494B1 (en) | 2014-07-17 | 2017-03-07 | Transphorm Inc. | Bridgeless power factor correction circuits |
US9318593B2 (en) | 2014-07-21 | 2016-04-19 | Transphorm Inc. | Forming enhancement mode III-nitride devices |
US9536967B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Recessed ohmic contacts in a III-N device |
US9536966B2 (en) | 2014-12-16 | 2017-01-03 | Transphorm Inc. | Gate structures for III-N devices |
US10200030B2 (en) | 2015-03-13 | 2019-02-05 | Transphorm Inc. | Paralleling of switching devices for high power circuits |
US9812532B1 (en) | 2015-08-28 | 2017-11-07 | Hrl Laboratories, Llc | III-nitride P-channel transistor |
US9871067B2 (en) * | 2015-11-17 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Infrared image sensor component |
CN108292678B (zh) | 2015-11-19 | 2021-07-06 | Hrl实验室有限责任公司 | 具有双栅极的iii族氮化物场效应晶体管 |
JP6888013B2 (ja) | 2016-01-15 | 2021-06-16 | トランスフォーム テクノロジー,インコーポレーテッド | AL(1−x)Si(x)Oゲート絶縁体を有するエンハンスメントモードIII族窒化物デバイス |
WO2017210323A1 (en) | 2016-05-31 | 2017-12-07 | Transphorm Inc. | Iii-nitride devices including a graded depleting layer |
US10319648B2 (en) | 2017-04-17 | 2019-06-11 | Transphorm Inc. | Conditions for burn-in of high power semiconductors |
US10332876B2 (en) | 2017-09-14 | 2019-06-25 | Infineon Technologies Austria Ag | Method of forming compound semiconductor body |
US10879368B2 (en) | 2017-10-17 | 2020-12-29 | Mitsubishi Electric Research Laboratories, Inc. | Transistor with multi-metal gate |
US10833063B2 (en) | 2018-07-25 | 2020-11-10 | Vishay SIliconix, LLC | High electron mobility transistor ESD protection structures |
CN109461655B (zh) * | 2018-09-21 | 2022-03-11 | 中国电子科技集团公司第五十五研究所 | 具有多栅结构的氮化物高电子迁移率晶体管制造方法 |
TWI811394B (zh) | 2019-07-09 | 2023-08-11 | 聯華電子股份有限公司 | 高電子遷移率電晶體及其製作方法 |
CN112531025B (zh) * | 2019-09-17 | 2024-01-30 | 联华电子股份有限公司 | 高电子迁移率晶体管 |
US20230078017A1 (en) * | 2021-09-16 | 2023-03-16 | Wolfspeed, Inc. | Semiconductor device incorporating a substrate recess |
WO2023189039A1 (ja) * | 2022-03-30 | 2023-10-05 | ローム株式会社 | 窒化物半導体装置 |
Family Cites Families (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4615102A (en) * | 1984-05-01 | 1986-10-07 | Fujitsu Limited | Method of producing enhancement mode and depletion mode FETs |
JPH0194676A (ja) * | 1987-10-06 | 1989-04-13 | Nec Corp | 半導体装置及びその製造方法 |
JPH03196532A (ja) * | 1989-12-25 | 1991-08-28 | Mitsubishi Electric Corp | 電界効果トランジスタとその製造方法 |
US5349214A (en) * | 1993-09-13 | 1994-09-20 | Motorola, Inc. | Complementary heterojunction device |
US5411902A (en) * | 1994-06-06 | 1995-05-02 | The United States Of America As Represented By The Secretary Of The Air Force | Process for improving gallium arsenide field effect transistor performance using an aluminum arsenide or an aluminum gallium arsenide buffer layer |
JPH10223901A (ja) * | 1996-12-04 | 1998-08-21 | Sony Corp | 電界効果型トランジスタおよびその製造方法 |
EP0974160A1 (en) * | 1998-02-09 | 2000-01-26 | Koninklijke Philips Electronics N.V. | Process of manufacturing a semiconductor device including a buried channel field effect transistor |
US6107649A (en) * | 1998-06-10 | 2000-08-22 | Rutgers, The State University | Field-controlled high-power semiconductor devices |
JP2000195871A (ja) * | 1998-12-28 | 2000-07-14 | Sony Corp | 半導体装置とその製造方法 |
JP2000277724A (ja) * | 1999-03-26 | 2000-10-06 | Nagoya Kogyo Univ | 電界効果トランジスタとそれを備えた半導体装置及びその製造方法 |
US6342411B1 (en) * | 1999-09-03 | 2002-01-29 | Motorola Inc. | Electronic component and method for manufacture |
US6586781B2 (en) * | 2000-02-04 | 2003-07-01 | Cree Lighting Company | Group III nitride based FETs and HEMTs with reduced trapping and method for producing the same |
JP3751791B2 (ja) * | 2000-03-28 | 2006-03-01 | 日本電気株式会社 | ヘテロ接合電界効果トランジスタ |
US6521961B1 (en) * | 2000-04-28 | 2003-02-18 | Motorola, Inc. | Semiconductor device using a barrier layer between the gate electrode and substrate and method therefor |
JP4186032B2 (ja) * | 2000-06-29 | 2008-11-26 | 日本電気株式会社 | 半導体装置 |
JP4022708B2 (ja) * | 2000-06-29 | 2007-12-19 | 日本電気株式会社 | 半導体装置 |
US6515316B1 (en) * | 2000-07-14 | 2003-02-04 | Trw Inc. | Partially relaxed channel HEMT device |
US6992319B2 (en) * | 2000-07-18 | 2006-01-31 | Epitaxial Technologies | Ultra-linear multi-channel field effect transistor |
EP1312122A4 (en) * | 2000-08-10 | 2006-08-02 | Walter David Braddock Iv | INTEGRATED TRANSISTOR DEVICES |
US6690042B2 (en) * | 2000-09-27 | 2004-02-10 | Sensor Electronic Technology, Inc. | Metal oxide semiconductor heterostructure field effect transistor |
JP4220683B2 (ja) * | 2001-03-27 | 2009-02-04 | パナソニック株式会社 | 半導体装置 |
US6849882B2 (en) * | 2001-05-11 | 2005-02-01 | Cree Inc. | Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer |
US6646293B2 (en) * | 2001-07-18 | 2003-11-11 | Motorola, Inc. | Structure for fabricating high electron mobility transistors utilizing the formation of complaint substrates |
WO2003050849A2 (en) * | 2001-12-06 | 2003-06-19 | Hrl Laboratories, Llc | High power-low noise microwave gan heterojunction field effet transistor |
WO2003071607A1 (fr) * | 2002-02-21 | 2003-08-28 | The Furukawa Electric Co., Ltd. | Transistor a effet de champ gan |
JP3951743B2 (ja) | 2002-02-28 | 2007-08-01 | 松下電器産業株式会社 | 半導体装置およびその製造方法 |
JP3733420B2 (ja) | 2002-03-01 | 2006-01-11 | 独立行政法人産業技術総合研究所 | 窒化物半導体材料を用いたヘテロ接合電界効果型トランジスタ |
US20040021152A1 (en) * | 2002-08-05 | 2004-02-05 | Chanh Nguyen | Ga/A1GaN Heterostructure Field Effect Transistor with dielectric recessed gate |
US6830945B2 (en) * | 2002-09-16 | 2004-12-14 | Hrl Laboratories, Llc | Method for fabricating a non-planar nitride-based heterostructure field effect transistor |
JP4479222B2 (ja) * | 2002-11-22 | 2010-06-09 | 沖電気工業株式会社 | 化合物半導体層の表面処理方法及び半導体装置の製造方法 |
JP2004273486A (ja) * | 2003-03-05 | 2004-09-30 | Mitsubishi Electric Corp | 半導体装置およびその製造方法 |
US7449728B2 (en) * | 2003-11-24 | 2008-11-11 | Tri Quint Semiconductor, Inc. | Monolithic integrated enhancement mode and depletion mode field effect transistors and method of making the same |
US7045404B2 (en) * | 2004-01-16 | 2006-05-16 | Cree, Inc. | Nitride-based transistors with a protective layer and a low-damage recess and methods of fabrication thereof |
US7465997B2 (en) * | 2004-02-12 | 2008-12-16 | International Rectifier Corporation | III-nitride bidirectional switch |
US7550781B2 (en) * | 2004-02-12 | 2009-06-23 | International Rectifier Corporation | Integrated III-nitride power devices |
-
2005
- 2005-01-21 US US11/040,657 patent/US7382001B2/en active Active
- 2005-01-24 CN CN2005800069256A patent/CN101273458B/zh not_active Expired - Fee Related
- 2005-01-24 DE DE112005000223T patent/DE112005000223T5/de not_active Withdrawn
- 2005-01-24 JP JP2006551390A patent/JP4909087B2/ja not_active Expired - Fee Related
- 2005-01-24 KR KR1020067016979A patent/KR100796043B1/ko active IP Right Grant
- 2005-01-24 TW TW094102007A patent/TWI257172B/zh not_active IP Right Cessation
- 2005-01-24 WO PCT/US2005/002267 patent/WO2005070009A2/en active Application Filing
-
2008
- 2008-05-07 US US12/116,366 patent/US8871581B2/en active Active
- 2008-08-13 JP JP2008208677A patent/JP2008270847A/ja active Pending
-
2011
- 2011-07-21 US US13/188,299 patent/US8546206B2/en active Active
-
2013
- 2013-09-26 US US14/037,808 patent/US20140030858A1/en not_active Abandoned
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI563790B (en) * | 2008-02-12 | 2016-12-21 | Transphorm Inc | Bridge circuits and method of operating the same |
US9899998B2 (en) | 2008-02-12 | 2018-02-20 | Transphorm Inc. | Bridge circuits and their components |
Also Published As
Publication number | Publication date |
---|---|
WO2005070009A2 (en) | 2005-08-04 |
WO2005070009A3 (en) | 2007-11-22 |
TW200531277A (en) | 2005-09-16 |
DE112005000223T5 (de) | 2007-06-28 |
US20140030858A1 (en) | 2014-01-30 |
US20110275183A1 (en) | 2011-11-10 |
US8871581B2 (en) | 2014-10-28 |
CN101273458B (zh) | 2010-09-08 |
US7382001B2 (en) | 2008-06-03 |
KR20060110003A (ko) | 2006-10-23 |
JP2007534163A (ja) | 2007-11-22 |
KR100796043B1 (ko) | 2008-01-21 |
US8546206B2 (en) | 2013-10-01 |
JP4909087B2 (ja) | 2012-04-04 |
US20060060871A1 (en) | 2006-03-23 |
US20080248634A1 (en) | 2008-10-09 |
CN101273458A (zh) | 2008-09-24 |
JP2008270847A (ja) | 2008-11-06 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI257172B (en) | Enhancement mode III-nitride fet | |
WO2005070007A3 (en) | Iii-nitride current control device and method of manufacture | |
TW200703565A (en) | Improved MOSFET using gate work function engineering for switching applications | |
TW200644241A (en) | Wide bandgap transistors with gate-source field plates | |
TW200620660A (en) | Wide bandgap field effect transistors with source connected field plates | |
JP2008501238A5 (zh) | ||
WO2008057438A3 (en) | Power switching semiconductor devices including rectifying junction-shunts | |
TW200744219A (en) | Field-effect transistor | |
WO2003038863A3 (en) | Trench dmos device with improved drain contact | |
WO2007118060A3 (en) | Self-aligned complementary ldmos | |
DE602004012311D1 (de) | Feldeffekttransistor mit isoliertem graben-gate | |
WO2005112128A3 (en) | Trench mosfet including buried source electrode and method of fabricating the same | |
TW200733249A (en) | Transistor with immersed contacts and methods of forming thereof | |
WO2008105077A1 (ja) | 化合物半導体装置とその製造方法 | |
TW200616239A (en) | Asymmetric hetero-doped high-voltage MOSFET (AH2MOS) | |
DE602006013456D1 (de) | Transistor mit verbessertem spitzenprofil und herstellungsverfahren dafür | |
WO2007147102A3 (en) | High voltage ldmos | |
WO2008027722A3 (en) | Power trench mosfets having sige/si channel structure | |
EP1737043A3 (en) | Insulated gate-type semiconductor device and manufacturing method of the same | |
TW200802802A (en) | Closed cell configuration to increase channel density for sub-micron planar semiconductor power device | |
TW200518206A (en) | Metal-oxide-semiconductor device formed in silicon-on-insulator | |
TW200644248A (en) | Semiconductor device and manufacturing method thereof | |
TW200620667A (en) | Bandgap engineered MOS-gated power transistors | |
TW200605355A (en) | LDMOS device and method of fabrication | |
WO2008130691A3 (en) | A high voltage (>100v) lateral trench power mosfet with low specific-on-resistance |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |