FR2924271B1 - Dispositif electronique a champ electrique controle - Google Patents

Dispositif electronique a champ electrique controle

Info

Publication number
FR2924271B1
FR2924271B1 FR0759330A FR0759330A FR2924271B1 FR 2924271 B1 FR2924271 B1 FR 2924271B1 FR 0759330 A FR0759330 A FR 0759330A FR 0759330 A FR0759330 A FR 0759330A FR 2924271 B1 FR2924271 B1 FR 2924271B1
Authority
FR
France
Prior art keywords
electronic device
electric field
controlled electric
field electronic
controlled
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
FR0759330A
Other languages
English (en)
Other versions
FR2924271A1 (fr
Inventor
Hacene Lahreche
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Soitec SA
Original Assignee
Picogiga International
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to FR0759330A priority Critical patent/FR2924271B1/fr
Application filed by Picogiga International filed Critical Picogiga International
Priority to PCT/EP2008/066244 priority patent/WO2009068566A1/fr
Priority to CN200880118063XA priority patent/CN101878533B/zh
Priority to DE112008002818.4T priority patent/DE112008002818B9/de
Priority to JP2010535368A priority patent/JP5589189B2/ja
Priority to KR1020107010780A priority patent/KR20100094467A/ko
Publication of FR2924271A1 publication Critical patent/FR2924271A1/fr
Priority to US12/788,976 priority patent/US8431964B2/en
Application granted granted Critical
Publication of FR2924271B1 publication Critical patent/FR2924271B1/fr
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
    • H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/432—Heterojunction gate for field effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/2003—Nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
FR0759330A 2007-11-27 2007-11-27 Dispositif electronique a champ electrique controle Active FR2924271B1 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
FR0759330A FR2924271B1 (fr) 2007-11-27 2007-11-27 Dispositif electronique a champ electrique controle
CN200880118063XA CN101878533B (zh) 2007-11-27 2008-11-26 具有受控电场的电子器件
DE112008002818.4T DE112008002818B9 (de) 2007-11-27 2008-11-26 Elektronisches Bauelement mit einem gesteuerten elektrischen Feld und Verfahren
JP2010535368A JP5589189B2 (ja) 2007-11-27 2008-11-26 制御された電界を有する電子デバイス
PCT/EP2008/066244 WO2009068566A1 (fr) 2007-11-27 2008-11-26 Dispositif électronique à champ électrique maîtrisé
KR1020107010780A KR20100094467A (ko) 2007-11-27 2008-11-26 제어된 전기장을 갖는 전자 장치
US12/788,976 US8431964B2 (en) 2007-11-27 2010-05-27 Electronic device with controlled electrical field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR0759330A FR2924271B1 (fr) 2007-11-27 2007-11-27 Dispositif electronique a champ electrique controle

Publications (2)

Publication Number Publication Date
FR2924271A1 FR2924271A1 (fr) 2009-05-29
FR2924271B1 true FR2924271B1 (fr) 2010-09-03

Family

ID=39338565

Family Applications (1)

Application Number Title Priority Date Filing Date
FR0759330A Active FR2924271B1 (fr) 2007-11-27 2007-11-27 Dispositif electronique a champ electrique controle

Country Status (7)

Country Link
US (1) US8431964B2 (fr)
JP (1) JP5589189B2 (fr)
KR (1) KR20100094467A (fr)
CN (1) CN101878533B (fr)
DE (1) DE112008002818B9 (fr)
FR (1) FR2924271B1 (fr)
WO (1) WO2009068566A1 (fr)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5724339B2 (ja) * 2010-12-03 2015-05-27 富士通株式会社 化合物半導体装置及びその製造方法
CN104126223A (zh) * 2012-02-23 2014-10-29 日本碍子株式会社 半导体元件及半导体元件的制造方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3326928B2 (ja) * 1993-12-08 2002-09-24 富士通株式会社 電界効果トランジスタの製造方法
US6849882B2 (en) * 2001-05-11 2005-02-01 Cree Inc. Group-III nitride based high electron mobility transistor (HEMT) with barrier/spacer layer
US7382001B2 (en) 2004-01-23 2008-06-03 International Rectifier Corporation Enhancement mode III-nitride FET
JP4041075B2 (ja) * 2004-02-27 2008-01-30 株式会社東芝 半導体装置
WO2005096365A1 (fr) * 2004-03-30 2005-10-13 Nec Corporation Dispositif semi-conducteur
WO2006025006A1 (fr) * 2004-08-31 2006-03-09 Koninklijke Philips Electronics N.V. Procede pour la production d'un evidement a etages multiples dans une structure en couches et transistor a effet de champ avec grille a evidements multiples
US7834380B2 (en) * 2004-12-09 2010-11-16 Panasonic Corporation Field effect transistor and method for fabricating the same
JP4606940B2 (ja) * 2005-05-19 2011-01-05 日本電信電話株式会社 半導体装置およびその製造方法
JP4751150B2 (ja) 2005-08-31 2011-08-17 株式会社東芝 窒化物系半導体装置
WO2008027027A2 (fr) * 2005-09-07 2008-03-06 Cree, Inc Transistors robustes avec traitement au fluor
WO2007059220A2 (fr) * 2005-11-15 2007-05-24 The Regents Of The University Of California Procedes permettant de mettre en forme le champ electrique dans des dispositifs electroniques, de passiver des dislocations et des defauts ponctuels, et d'ameliorer le rendement de la luminescence de dispositifs optiques
JP5100002B2 (ja) * 2005-12-14 2012-12-19 新日本無線株式会社 窒化物半導体装置

Also Published As

Publication number Publication date
FR2924271A1 (fr) 2009-05-29
KR20100094467A (ko) 2010-08-26
DE112008002818B4 (de) 2022-06-30
CN101878533A (zh) 2010-11-03
JP2011523197A (ja) 2011-08-04
DE112008002818T5 (de) 2011-02-17
JP5589189B2 (ja) 2014-09-17
US20100258846A1 (en) 2010-10-14
US8431964B2 (en) 2013-04-30
WO2009068566A1 (fr) 2009-06-04
DE112008002818B9 (de) 2022-09-22
CN101878533B (zh) 2012-06-13

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