JP6326638B2 - 半導体装置 - Google Patents
半導体装置 Download PDFInfo
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- JP6326638B2 JP6326638B2 JP2015513554A JP2015513554A JP6326638B2 JP 6326638 B2 JP6326638 B2 JP 6326638B2 JP 2015513554 A JP2015513554 A JP 2015513554A JP 2015513554 A JP2015513554 A JP 2015513554A JP 6326638 B2 JP6326638 B2 JP 6326638B2
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- electrode
- semiconductor layer
- nitride semiconductor
- semiconductor device
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- 239000004065 semiconductor Substances 0.000 title claims description 473
- 239000010410 layer Substances 0.000 claims description 414
- 150000004767 nitrides Chemical class 0.000 claims description 229
- 239000000758 substrate Substances 0.000 claims description 27
- 239000011229 interlayer Substances 0.000 claims description 25
- 230000005533 two-dimensional electron gas Effects 0.000 claims description 18
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000012535 impurity Substances 0.000 claims description 15
- 230000005669 field effect Effects 0.000 claims description 11
- 230000009471 action Effects 0.000 claims description 4
- 230000015556 catabolic process Effects 0.000 claims description 3
- 230000004048 modification Effects 0.000 description 113
- 238000012986 modification Methods 0.000 description 113
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 24
- 239000010936 titanium Substances 0.000 description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 18
- 239000000203 mixture Substances 0.000 description 17
- 229910002601 GaN Inorganic materials 0.000 description 15
- 230000005684 electric field Effects 0.000 description 14
- 229910052751 metal Inorganic materials 0.000 description 14
- 239000002184 metal Substances 0.000 description 14
- 230000002441 reversible effect Effects 0.000 description 14
- 229910052581 Si3N4 Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 13
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 13
- 238000000034 method Methods 0.000 description 13
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 12
- 229910052710 silicon Inorganic materials 0.000 description 12
- 239000010703 silicon Substances 0.000 description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010931 gold Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052759 nickel Inorganic materials 0.000 description 9
- 229910000480 nickel oxide Inorganic materials 0.000 description 9
- 230000001629 suppression Effects 0.000 description 9
- 229910002704 AlGaN Inorganic materials 0.000 description 8
- AMWRITDGCCNYAT-UHFFFAOYSA-L hydroxy(oxo)manganese;manganese Chemical compound [Mn].O[Mn]=O.O[Mn]=O AMWRITDGCCNYAT-UHFFFAOYSA-L 0.000 description 8
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 6
- MWPLVEDNUUSJAV-UHFFFAOYSA-N anthracene Chemical compound C1=CC=CC2=CC3=CC=CC=C3C=C21 MWPLVEDNUUSJAV-UHFFFAOYSA-N 0.000 description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- IEQIEDJGQAUEQZ-UHFFFAOYSA-N phthalocyanine Chemical compound N1C(N=C2C3=CC=CC=C3C(N=C3C4=CC=CC=C4C(=N4)N3)=N2)=C(C=CC=C2)C2=C1N=C1C2=CC=CC=C2C4=N1 IEQIEDJGQAUEQZ-UHFFFAOYSA-N 0.000 description 6
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 5
- 230000007547 defect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- XBDYBAVJXHJMNQ-UHFFFAOYSA-N Tetrahydroanthracene Natural products C1=CC=C2C=C(CCCC3)C3=CC2=C1 XBDYBAVJXHJMNQ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000011777 magnesium Substances 0.000 description 4
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 4
- 230000001681 protective effect Effects 0.000 description 4
- IFLREYGFSNHWGE-UHFFFAOYSA-N tetracene Chemical compound C1=CC=CC2=CC3=CC4=CC=CC=C4C=C3C=C21 IFLREYGFSNHWGE-UHFFFAOYSA-N 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- 230000001590 oxidative effect Effects 0.000 description 3
- 239000010948 rhodium Substances 0.000 description 3
- 229920003026 Acene Polymers 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910018871 CoO 2 Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 229910000428 cobalt oxide Inorganic materials 0.000 description 2
- IVMYJDGYRUAWML-UHFFFAOYSA-N cobalt(ii) oxide Chemical compound [Co]=O IVMYJDGYRUAWML-UHFFFAOYSA-N 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- WMVRXDZNYVJBAH-UHFFFAOYSA-N dioxoiron Chemical compound O=[Fe]=O WMVRXDZNYVJBAH-UHFFFAOYSA-N 0.000 description 2
- 238000005566 electron beam evaporation Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- SLIUAWYAILUBJU-UHFFFAOYSA-N pentacene Chemical compound C1=CC=CC2=CC3=CC4=CC5=CC=CC=C5C=C4C=C3C=C21 SLIUAWYAILUBJU-UHFFFAOYSA-N 0.000 description 2
- 125000002080 perylenyl group Chemical group C1(=CC=C2C=CC=C3C4=CC=CC5=CC=CC(C1=C23)=C45)* 0.000 description 2
- CSHWQDPOILHKBI-UHFFFAOYSA-N peryrene Natural products C1=CC(C2=CC=CC=3C2=C2C=CC=3)=C3C2=CC=CC3=C1 CSHWQDPOILHKBI-UHFFFAOYSA-N 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052703 rhodium Inorganic materials 0.000 description 2
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 2
- YYMBJDOZVAITBP-UHFFFAOYSA-N rubrene Chemical compound C1=CC=CC=C1C(C1=C(C=2C=CC=CC=2)C2=CC=CC=C2C(C=2C=CC=CC=2)=C11)=C(C=CC=C2)C2=C1C1=CC=CC=C1 YYMBJDOZVAITBP-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000003980 solgel method Methods 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 230000007704 transition Effects 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- JVKRKMWZYMKVTQ-UHFFFAOYSA-N 2-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]pyrazol-1-yl]-N-(2-oxo-3H-1,3-benzoxazol-6-yl)acetamide Chemical class C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)C=1C=NN(C=1)CC(=O)NC1=CC2=C(NC(O2)=O)C=C1 JVKRKMWZYMKVTQ-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- -1 nitride compound Chemical class 0.000 description 1
- 230000003071 parasitic effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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Description
本開示の第1の実施形態に係る半導体装置の断面図を図1に示す。なお、この半導体装置は、電界効果トランジスタ(FET)である。
図6A、図6B、本実施形態に係るFETにおける変形例1を示しており、平面図(図6Aと、平面図における6B−6B線の断面図(図6B)を示している。
本実施形態の変形例2に係るFETの断面図を図7に示す。
本実施形態に係るFETにおける変形例3の断面図を、図8に示す。
本実施形態に係るFETにおける変形例4の断面図を、図9に示す。
本実施形態に係るFETにおける変形例5の断面図を、図10に示す。
本実施形態に係るFETにおける変形例6の断面図を、図11に示す。
本実施形態に係るFETにおける変形例7の断面図を、図12に示す。
本実施形態に係るFETにおける変形例8の断面図を、図13Aに示す。
図13Bは、本実施形態に係るFETにおける変形例9の上側からみた平面図である。図13Cは、本実施形態に係るFETにおける変形例9の断面図であり、図13Bの13C−13C線における断面を示す。
図13Dは、本実施形態に係るFETにおける変形例10の上側からみた平面図である。図13Eは、本実施形態に係るFETにおける変形例10の断面図であり、図13Dの13E−13E線における断面を示す。
図13Fは、本実施形態に係るFETにおける変形例11の上側からみた平面図である。図13Gは、本実施形態に係るFETにおける変形例11の断面図であり、図13Fの13G−13G線における断面を示す。
本開示の第2の実施形態に係る半導体装置の断面図を図14に示す。なお、この半導体装置は、ダイオードである。
図16A、図16Bに、本実施形態に係るダイオードにおける変形例1を示しており、平面図(図16A)と、平面図における16B−16B線の断面図(図16B)を示している。
図17は、本実施形態に係るダイオードにおける変形例2を示す断面図である。
図18は、本実施形態に係るダイオードにおける変形例3を示す断面図である。
図19は、本実施形態に係るダイオードにおける変形例4を示す断面図である。
図20は、本実施形態に係るダイオードにおける変形例5を示す断面図である。
図21は、本実施形態に係るダイオードにおける変形例6を示す断面図である。
図22は、本実施形態に係るダイオードにおける変形例7を示す断面図である。
図23Aは、本実施形態に係るダイオードにおける変形例8を示す断面図である。
図23Bは、本実施形態に係るダイオードにおける変形例を示す上側からみた平面図である。図23Cは、本実施形態に係るダイオードにおける変形例を示す断面図であり、図23Bの23C−23C線における断面を示す。
図23Dは、本実施形態に係るダイオードにおける変形例を示す上側からみた平面図である。図23Eは、本実施形態に係るダイオードにおける変形例を示す断面図であり、図23Dの23E−23E線における断面を示す。
図23Fは、本実施形態に係るダイオードにおける変形例を示す平面図である。図23Gは、本実施形態に係るダイオードにおける変形例を示す断面図であり、図23Fの23G−23G線における断面を示す。
図24は、本実施形態に係るダイオードにおける変形例9を示す断面図である。
102 バッファ層
103,128,131,146,151,152 第1の窒化物半導体層
104,129,132,139,147,149 第2の窒化物半導体層
105,133,200,220,230,250 第2の電極
106,134 第2の電極配線
107,113,135,140,141,150,210,240,260 電極部
108 層間絶縁膜
109,110 ゲート電極
111,136 第1の電極配線
112,137 第1の電極
114 絶縁体層
115 リセス
117,144 有機半導体層
118,180,270 ドレイン接続電極
119,145 酸化物半導体層
120 ドレイン端子
121 ゲート端子
122 ショットキー電流
123 電子
124,125 ビアホール
126,138 半導体層積層体
127,142,170,171 第3の窒化物半導体層
130,148 高キャリア濃度半導体層
143,181 カソード接続電極
153 第2のアノード電極
154 第2の電極配線張り出し長
300,301 2次元電子ガスチャネル
Claims (18)
- 基板と、
前記基板の上に設けられた第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に設けられた第2の窒化物半導体層と、
前記第1の窒化物半導体層の下面よりも上に設けられたソース電極またはアノード電極である第1の電極と、
前記第1の窒化物半導体層の下面よりも上に設けられたドレイン電極またはカソード電極である第2の電極と、
前記第2の窒化物半導体層の下面よりも上に設けられた電極部と、を備え、
前記第1の窒化物半導体層が前記第2の窒化物半導体層との界面近傍に2次元電子ガスチャネルを有し、
前記第1の窒化物半導体層と前記第2の窒化物半導体層とにより半導体層積層体を構成し、
前記第2の電極を覆う層間絶縁膜が形成され、
平面視において、
前記第1の電極と前記第2の電極との間に前記電極部が間隔をおいて配置され、且つ前記第2の電極と前記電極部との間隔が前記第1の電極と前記電極部との間隔よりも短く、
前記第2の電極は、前記電極部で囲まれており、
前記層間絶縁膜の一部が開口を有し、
前記開口において前記第2の電極と接続される第2の電極配線が形成され、
前記第2の電極配線と前記電極部が交差するところで、前記開口が配置され、
前記電極部と前記第2の窒化物半導体層との接合面において、
前記電極部から前記第2の窒化物半導体層へ順方向の整流作用を示すエネルギー障壁を有し、
前記第2の窒化物半導体層のバンドギャップが前記第1の窒化物半導体層のバンドギャップよりも大きく、
前記電極部は前記第2の電極と実質的に同電位であり、
前記第1の電極と前記第2の電極との間に、前記第1の電極が正となる最大動作電圧が印加されている場合に、前記電極部下方の前記2次元電子ガスチャネルが導通状態となっている半導体装置。 - 請求項1に記載の半導体装置において、
前記電極部は、互いに間隔をおいて形成された複数の島状部を有し、
前記開口が前記複数の島状部上に配置され、
前記第2の電極配線は、前記複数の島状部に跨って形成されていることを特徴とする半導体装置。 - 請求項1または2に記載の半導体装置において、
前記第2の電極配線は、前記電極部よりも、前記第1の電極方向に対して内側に形成されることを特徴とする半導体装置。 - 基板と、
前記基板の上に設けられた第1の窒化物半導体層と、
前記第1の窒化物半導体層の上に設けられた第2の窒化物半導体層と、
前記第1の窒化物半導体層の下面よりも上に設けられたソース電極またはアノード電極である第1の電極と、
前記第1の窒化物半導体層の下面よりも上に設けられたドレイン電極またはカソード電極である第2の電極と、
前記第2の窒化物半導体層の下面よりも上に設けられた電極部と、を備え、
前記第1の窒化物半導体層が前記第2の窒化物半導体層との界面近傍に2次元電子ガスチャネルを有し、
前記第1の窒化物半導体層と前記第2の窒化物半導体層とにより半導体層積層体を構成し、
前記半導体層積層体の一部が高キャリア濃度半導体層となっており、
前記高キャリア濃度半導体層のシートキャリア濃度が、前記半導体層積層体の他部のシートキャリア濃度よりも高く、
前記高キャリア濃度半導体層が少なくとも前記電極部直下を含む領域に設けられ、
平面視において、
前記第1の電極と前記第2の電極との間に前記電極部が間隔をおいて配置され、且つ前記第2の電極と前記電極部との間隔が前記第1の電極と前記電極部との間隔よりも短く、
前記電極部と前記第2の窒化物半導体層との接合面において、
前記電極部から前記第2の窒化物半導体層へ順方向の整流作用を示すエネルギー障壁を有し、
前記第2の窒化物半導体層のバンドギャップが前記第1の窒化物半導体層のバンドギャップよりも大きく、
前記電極部は前記第2の電極と実質的に同電位であり、
前記第1の電極と前記第2の電極との間に、前記第1の電極が正となる最大動作電圧が印加されている場合に、前記電極部下方の前記2次元電子ガスチャネルが導通状態となっている半導体装置。 - 請求項4に記載の半導体装置において、
前記高キャリア濃度半導体層における前記第2の窒化物半導体層の厚さが、前記半導体層積層体における第2の窒化物半導体層の厚さよりも厚いことを特徴とする半導体装置。 - 請求項4に記載の半導体装置において、
前記高キャリア濃度半導体層における前記第2の窒化物半導体層のバンドギャップが、前記半導体層積層体における第2の窒化物半導体層のバンドギャップよりも大きいことを特徴とする半導体装置。 - 請求項4〜6のいずれか1項に記載の半導体装置において、
前記高キャリア濃度半導体層における前記第1の窒化物半導体層のn型不純物濃度が、前記半導体層積層体における前記第1の窒化物半導体層のn型不純物濃度よりも高いことを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記電極部は、前記第2の窒化物半導体層にショットキー接触していることを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記電極部は、第3の窒化物半導体層であることを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記電極部は、有機半導体膜であることを特徴とする半導体装置。 - 請求項1〜7のいずれか1項に記載の半導体装置において、
前記電極部は、酸化物半導体であることを特徴とする半導体装置。 - 請求項9〜11のいずれか1項に記載の半導体装置において、
前記電極部は、p型の導電型を有することを特徴とする半導体装置。 - 請求項1〜12のいずれかに記載の半導体装置において、
前記電極部は、前記第2の電極と接していることを特徴とする半導体装置。 - 請求項13に記載の半導体装置において、
前記電極部と、前記第2の電極とが、ショットキー接合していることを特徴とする半導体装置。 - 請求項1〜14のいずれか1項に記載の半導体装置において、
前記第1の電極がアノード電極であり、
前記第2の電極がカソード電極であって、
ダイオードとして機能することを特徴とする半導体装置。 - 請求項15に記載の半導体装置において、
前記アノード電極が、
前記半導体層積層体上に、あるいは前記基板の上に形成され、前記半導体層積層体とショットキー接触し、
ダイオードとして機能することを特徴とする半導体装置。 - 請求項1〜14のいずれか1項に記載の半導体装置において、
前記第1の電極と前記電極部の間の前記半導体層積層体の上に、
前記第1の電極及び前記電極部と間隔をおいて形成されたゲート電極をさらに備え、
前記第1の電極がソース電極であり、
前記第2の電極がドレイン電極であって、
電界効果トランジスタとして機能することを特徴とする半導体装置。 - 請求項17に記載の半導体装置において、
ゲートしきい値電圧以上の第1の電圧が前記ゲート電極に印加された状態で、
前記半導体装置を破壊するよりも小さい第2の電圧を前記ソース電極と前記ドレイン電極との間に印加したときに、
前記電極部と、前記電極部直下の前記第2の窒化物半導体層との電位差が、前記エネルギー障壁の大きさ以上になり、前記電極部から前記ソース電極へと電流が流れることを特徴とする半導体装置。
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2014
- 2014-04-17 WO PCT/JP2014/002184 patent/WO2014174810A1/ja active Application Filing
- 2014-04-17 JP JP2015513554A patent/JP6326638B2/ja active Active
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- 2016-08-11 US US15/234,775 patent/US9818835B2/en active Active
-
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- 2017-10-09 US US15/728,141 patent/US10312339B2/en active Active
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Also Published As
Publication number | Publication date |
---|---|
US9818835B2 (en) | 2017-11-14 |
JPWO2014174810A1 (ja) | 2017-02-23 |
US20160035853A1 (en) | 2016-02-04 |
US20160351676A1 (en) | 2016-12-01 |
JP6533962B2 (ja) | 2019-06-26 |
WO2014174810A1 (ja) | 2014-10-30 |
JP2018125550A (ja) | 2018-08-09 |
US20180040706A1 (en) | 2018-02-08 |
US10312339B2 (en) | 2019-06-04 |
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