JP7075128B2 - 改良された終端構造を有する窒化ガリウムトランジスタ - Google Patents
改良された終端構造を有する窒化ガリウムトランジスタ Download PDFInfo
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- JP7075128B2 JP7075128B2 JP2019081469A JP2019081469A JP7075128B2 JP 7075128 B2 JP7075128 B2 JP 7075128B2 JP 2019081469 A JP2019081469 A JP 2019081469A JP 2019081469 A JP2019081469 A JP 2019081469A JP 7075128 B2 JP7075128 B2 JP 7075128B2
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- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims description 80
- 229910002601 GaN Inorganic materials 0.000 title claims description 58
- 239000000758 substrate Substances 0.000 claims description 94
- 238000002347 injection Methods 0.000 claims description 67
- 239000007924 injection Substances 0.000 claims description 67
- 229910052751 metal Inorganic materials 0.000 claims description 44
- 239000002184 metal Substances 0.000 claims description 44
- 239000004065 semiconductor Substances 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 5
- 239000010410 layer Substances 0.000 description 116
- 238000007667 floating Methods 0.000 description 21
- 230000036961 partial effect Effects 0.000 description 16
- 230000005684 electric field Effects 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 6
- 230000006698 induction Effects 0.000 description 6
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 5
- 239000000969 carrier Substances 0.000 description 5
- 229910052749 magnesium Inorganic materials 0.000 description 5
- 239000011777 magnesium Substances 0.000 description 5
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
- 238000005859 coupling reaction Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000000670 limiting effect Effects 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 230000003446 memory effect Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 230000005533 two-dimensional electron gas Effects 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- NWAIGJYBQQYSPW-UHFFFAOYSA-N azanylidyneindigane Chemical compound [In]#N NWAIGJYBQQYSPW-UHFFFAOYSA-N 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005264 electron capture Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 230000001404 mediated effect Effects 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000003472 neutralizing effect Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- -1 nitride compounds Chemical class 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
- 230000001960 triggered effect Effects 0.000 description 1
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Description
本出願は2018年4月23日に出願された「GALLIUM NITRIDE TRANSISTOR WITH IMPROVED TERMINATION」と題する米国仮特許出願第62/661,585号に基づく優先権を主張するものであり、全ての目的のためにその全体が参照により本明細書に組み入れられる。
本発明は一般に半導体デバイスに関し、特には窒化ガリウム(GaN)ベースのデバイスに関する。
Claims (18)
- トランジスタであって、
半導体基板と、
前記基板内に形成され前記基板の一部と接触するソース電極を含むソース領域と、
前記基板内に形成され前記ソース領域から離隔されるドレイン領域と、
前記基板内に形成され前記基板の一部と接触するゲートスタックを含み、前記ソース領域と前記ドレイン領域との間に位置するゲート領域と、
前記基板内に形成され前記基板の一部と接触するP型層を含み、前記ゲート領域と前記ドレイン領域との間に位置するホール注入領域と、
前記P型層の第一の部分にわたってそれと接触して形成される誘電体層と、
(1)ドレイン電極を形成するために前記基板の前記ドレイン領域にわたってそれと接触して形成され、(2)ホール注入電極を形成するために前記P型層の第二の部分にわたってそれと接触して形成され、(3)前記ホール注入領域にフィールドプレートを形成するために前記誘電体層の一部にわたってそれと接触して形成される、単一の材料のみで形成される連続した単一のモノリシックな金属層と、
を備える、トランジスタ。 - 前記連続した単一のモノリシックな金属層が前記基板の前記ドレイン領域にわたって延在し、前記P型層の第一の側面に隣接し、前記P型層の上面の第一の領域にわたって延在する、請求項1に記載のトランジスタ。
- 前記誘電体層が前記基板の表面にわたって延在し、前記P型層の第二の側面に隣接し、前記P型層の前記上面の第二の領域にわたって延在する、請求項2に記載のトランジスタ。
- 前記フィールドプレートが前記誘電体層にわたって延在し、前記P型層の前記第二の側面と同一平面になる前に終端する、請求項3に記載のトランジスタ。
- 前記連続した単一のモノリシックな金属層が前記P型層とオーミック接触する、請求項1に記載のトランジスタ。
- 前記ドレイン領域の長さに沿って形成された複数の個々のホール注入領域をさらに備える、請求項1に記載のトランジスタ。
- 前記ホール注入領域が第一のホール注入領域であり、第二のホール注入領域が前記基板内に形成され前記第一のホール注入領域と前記ゲート領域との間に位置する、請求項1に記載のトランジスタ。
- 前記第二のホール注入領域が前記基板の一部と接触し前記連続した単一のモノリシックな金属層とはオーミック接触しないP型層を含む、請求項7に記載のトランジスタ。
- 前記連続した単一のモノリシックな金属層が前記P型層の上面のおよそ半分にわたって形成され、前記誘電体層が前記P型層の前記上面の残りの部分にわたって形成される、請求項1に記載のトランジスタ。
- 前記半導体基板が窒化ガリウムを備える、請求項1に記載のトランジスタ。
- トランジスタであって、
半導体基板と、
前記基板内に形成され前記基板の一部と接触するソース電極を含むソース領域と、
前記基板内に形成され前記ソース領域から離隔されるドレイン領域と、
前記基板内に形成され前記基板の一部と接触するゲートスタックを含み、前記ソース領域と前記ドレイン領域との間に位置するゲート領域と、
前記基板内に形成され前記基板の一部と接触するP型層を含み、前記ゲート領域と前記ドレイン領域との間に位置するホール注入領域と、
前記P型層の上面の第一の領域にわたって延在する誘電体層と、
(1)ドレイン電極を形成するために前記基板のドレイン領域にわたって延在し、(2)ホール注入電極を形成するために前記P型層の第一の側面に隣接して前記P型層の前記上面の第二の領域にわたって延在し、(3)フィールドプレートを形成するために前記誘電体層の一部にわたって延在する、単一のモノリシックな金属層と、
を備える、トランジスタ。 - 前記フィールドプレートがホール注入領域フィールドプレートである、請求項11に記載のトランジスタ。
- 前記誘電体層が前記基板の表面にわたって延在し、前記P型層の第二の側面に隣接し、前記P型層の前記上面の前記第一の領域にわたって延在する、請求項12に記載のトランジスタ。
- 前記フィールドプレートが前記誘電体層の前記第一の領域にわたって延在し、前記P型層の前記第二の側面と同一平面になる前に終端する、請求項13に記載のトランジスタ。
- 前記単一のモノリシックな金属層が前記P型層とオーミック接触する、請求項11に記載のトランジスタ。
- 前記ドレイン領域の長さに沿って形成された複数の個々のホール注入領域をさらに備える、請求項11に記載のトランジスタ。
- 前記ホール注入領域が第一のホール注入領域であり、第二のホール注入領域が前記基板内に形成され前記第一のホール注入領域と前記ゲート領域との間に位置する、請求項11に記載のトランジスタ。
- 前記第二のホール注入領域が前記基板の一部と接触し前記単一のモノリシックな金属層とはオーミック接触しないP型層を含む、請求項17に記載のトランジスタ。
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