JP5776143B2 - 半導体装置 - Google Patents
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- JP5776143B2 JP5776143B2 JP2010153744A JP2010153744A JP5776143B2 JP 5776143 B2 JP5776143 B2 JP 5776143B2 JP 2010153744 A JP2010153744 A JP 2010153744A JP 2010153744 A JP2010153744 A JP 2010153744A JP 5776143 B2 JP5776143 B2 JP 5776143B2
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- 239000004065 semiconductor Substances 0.000 title claims description 117
- 150000001875 compounds Chemical class 0.000 claims description 39
- 239000012159 carrier gas Substances 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 18
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 description 24
- -1 fluorine ions Chemical class 0.000 description 10
- 239000004020 conductor Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229910002601 GaN Inorganic materials 0.000 description 6
- 229910052731 fluorine Inorganic materials 0.000 description 6
- 239000011737 fluorine Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000012535 impurity Substances 0.000 description 5
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 229910052719 titanium Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 229910002704 AlGaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000001451 molecular beam epitaxy Methods 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 239000010948 rhodium Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical group [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- MHOVAHRLVXNVSD-UHFFFAOYSA-N rhodium atom Chemical compound [Rh] MHOVAHRLVXNVSD-UHFFFAOYSA-N 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 229910052596 spinel Inorganic materials 0.000 description 1
- 239000011029 spinel Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000005533 two-dimensional electron gas Effects 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01—ELECTRIC ELEMENTS
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
- H01L29/207—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds further characterised by the doping material
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- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
- H01L29/7787—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT with wide bandgap charge-carrier supplying layer, e.g. direct single heterostructure MODFET
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
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- Junction Field-Effect Transistors (AREA)
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Description
第2の半導体装置(請求項2に対応)は、上記の構成において、好ましくは、電流制限部は、第1の主電極と第2の主電極の円弧領域との間に形成される二次元キャリアガス層のキャリア濃度を部分的に低減した部分であることを特徴とする。
第3の半導体装置(請求項3に対応)は、上記の構成において、好ましくは、電流制限部は、第1の主電極と第2の主電極の円弧領域との間の二次元キャリアガス層を除去した部分であることを特徴とする。
第4の半導体装置(請求項4に対応)は、上記の構成において、好ましくは、化合物半導体層は、二次元キャリアガス層を含むキャリア走行層と、該キャリア走行層上にヘテロ接合をなすように形成されるキャリア供給層と、を備え、電流制限部は、第1の主電極と第2の主電極の円弧領域との間のキャリア供給層を部分的に薄くした部分であることを特徴とする。
第5の半導体装置(請求項5に対応)は、上記の構成において、好ましくは、電流制限部は、第1の主電極と第2の主電極の円弧領域との間のキャリア走行層に接合する化合物半導体層にフッ素イオンをドーピングした部分であることを特徴とする。
第6の半導体装置(請求項6に対応)は、上記の構成において、好ましくは、電流制限部は、第1の主電極と第2の主電極の円弧領域との間のキャリア走行層に接合した化合物半導体層のp型半導体層部分であることを特徴とする。
図7と図8は、本発明の第1の実施形態の変形例に係る窒化物系化合物半導体装置を示す図である。図7は、第1の実施形態での図2に対応する図である。図8は、図7のD−D断面図である。図7と図8に示した窒化物系化合物半導体装置は、電流制限部30が、第1の主電極14と第2の主電極15の円弧領域15bとの間の制御電極16の直下以外の二次元キャリアガス層21も部分的に除去した部分であることが、図1〜図6で示した本発明の第1の実施形態と異なる。その他の構成については、図1〜図6で示した本発明の第1の実施形態に係る窒化物系化合物半導体装置と同様である。
11 キャリア走行層
12 半導体層
13 主面
14 第1の主電極(ドレイン電極)
15 第2の主電極(ソース電極)
16 制御電極
17 キャリア供給層
18 基板
19 電流制限部
20 バッファ層
21 二次元キャリアガス層
Claims (6)
- 基板と、該基板上に形成され、かつヘテロ接合に基づく二次元キャリアガス層を有する化合物半導体層と、
前記化合物半導体層上に形成される第1の主電極と、
前記化合物半導体層上において平面的に見て前記第1の主電極を包囲するように形成され、かつ直線領域と円弧領域とを有する第2の主電極と、
前記化合物半導体層上において前記第1の主電極及び前記第2の主電極の間に形成された制御電極と、を備え、前記二次元キャリアガス層を介して前記第1の主電極及び前記第2の主電極の間に電流が流れる半導体装置であって、
前記第1の主電極と前記第2の主電極の円弧領域との間に電流の流れを抑制する電流制限部を前記制御電極の直下以外の部分にのみ設けたことを特徴とする半導体装置。 - 前記電流制限部は、前記第1の主電極と前記第2の主電極の円弧領域との間に形成される二次元キャリアガス層のキャリア濃度を部分的に低減した部分であることを特徴とする請求項1に記載の半導体装置。
- 前記電流制限部は、前記第1の主電極と前記第2の主電極の円弧領域との間の二次元キャリアガス層を除去した部分であることを特徴とする請求項1又は2に記載の半導体装置。
- 前記化合物半導体層は、前記二次元キャリアガス層を含むキャリア走行層と、該キャリア走行層上にヘテロ接合をなすように形成されるキャリア供給層と、を備え、前記電流制限部は、前記第1の主電極と前記第2の主電極の円弧領域との間の前記キャリア供給層を部分的に薄くした部分であることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
- 前記電流制限部は、前記第1の主電極と前記第2の主電極の円弧領域との間の前記キャリア走行層に接合する化合物半導体層にフッ素イオンをドーピングした部分であることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
- 前記電流制限部は、前記第1の主電極と前記第2の主電極の円弧領域との間の前記キャリア走行層に接合した化合物半導体層のp型半導体層部分であることを特徴とする請求項1〜3のいずれか1項に記載の半導体装置。
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
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JP2010153744A JP5776143B2 (ja) | 2010-07-06 | 2010-07-06 | 半導体装置 |
US13/243,600 US20120032232A1 (en) | 2010-07-06 | 2011-09-23 | Semiconductor device |
US13/962,899 US9153682B2 (en) | 2010-07-06 | 2013-08-08 | Semiconductor device |
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JP2010153744A JP5776143B2 (ja) | 2010-07-06 | 2010-07-06 | 半導体装置 |
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JP2012018961A JP2012018961A (ja) | 2012-01-26 |
JP5776143B2 true JP5776143B2 (ja) | 2015-09-09 |
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Publication number | Priority date | Publication date | Assignee | Title |
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JP4794655B2 (ja) * | 2009-06-09 | 2011-10-19 | シャープ株式会社 | 電界効果トランジスタ |
US9070755B2 (en) | 2012-02-17 | 2015-06-30 | International Rectifier Corporation | Transistor having elevated drain finger termination |
US9379231B2 (en) * | 2012-02-17 | 2016-06-28 | Infineon Technologies Americas Corp. | Transistor having increased breakdown voltage |
JP5701805B2 (ja) * | 2012-03-28 | 2015-04-15 | 株式会社東芝 | 窒化物半導体ショットキダイオードの製造方法 |
US9461158B2 (en) * | 2013-06-13 | 2016-10-04 | Sharp Kabushiki Kaisha | Heterojunction field effect transistor |
JP2017063120A (ja) * | 2015-09-25 | 2017-03-30 | サンケン電気株式会社 | 半導体装置 |
JP2017092083A (ja) * | 2015-11-02 | 2017-05-25 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
CN105895686A (zh) * | 2016-01-21 | 2016-08-24 | 苏州能讯高能半导体有限公司 | 高电子迁移率晶体管器件及其制造方法 |
US9882041B1 (en) | 2016-11-17 | 2018-01-30 | Texas Instruments Incorporated | HEMT having conduction barrier between drain fingertip and source |
US9923069B1 (en) | 2017-02-28 | 2018-03-20 | Panasonic Intellectual Property Management Co., Ltd. | Nitride semiconductor device |
JP2021089934A (ja) | 2019-12-03 | 2021-06-10 | 株式会社東芝 | 半導体装置 |
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JP3456054B2 (ja) | 1995-05-12 | 2003-10-14 | 富士電機株式会社 | 高耐圧横型半導体素子 |
JP2005093696A (ja) * | 2003-09-17 | 2005-04-07 | Matsushita Electric Ind Co Ltd | 横型mosトランジスタ |
US7382001B2 (en) * | 2004-01-23 | 2008-06-03 | International Rectifier Corporation | Enhancement mode III-nitride FET |
JP4041075B2 (ja) * | 2004-02-27 | 2008-01-30 | 株式会社東芝 | 半導体装置 |
US7250642B2 (en) * | 2004-07-29 | 2007-07-31 | Matsushita Electric Industrial Co., Ltd. | Field-effect transistor |
JP4221397B2 (ja) * | 2004-07-29 | 2009-02-12 | パナソニック株式会社 | 電界効果トランジスタ |
JP5093991B2 (ja) | 2005-03-31 | 2012-12-12 | 住友電工デバイス・イノベーション株式会社 | 半導体装置 |
JP5332112B2 (ja) * | 2006-03-29 | 2013-11-06 | 富士電機株式会社 | 高耐圧横型mosfet |
JP5526470B2 (ja) * | 2007-09-03 | 2014-06-18 | サンケン電気株式会社 | 窒化物系化合物半導体装置 |
JP5416399B2 (ja) | 2008-02-13 | 2014-02-12 | 株式会社東芝 | 半導体装置 |
JP5355959B2 (ja) * | 2008-08-08 | 2013-11-27 | 古河電気工業株式会社 | 電界効果トランジスタおよび電界効果トランジスタの製造方法 |
JP5644042B2 (ja) * | 2008-10-20 | 2014-12-24 | 株式会社村田製作所 | 半導体装置 |
JP5487613B2 (ja) * | 2008-12-19 | 2014-05-07 | 富士通株式会社 | 化合物半導体装置及びその製造方法 |
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2010
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2011
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US9153682B2 (en) | 2015-10-06 |
JP2012018961A (ja) | 2012-01-26 |
US20120032232A1 (en) | 2012-02-09 |
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