JP5281748B2 - Iii族窒化物素子の不動態化およびその方法 - Google Patents
Iii族窒化物素子の不動態化およびその方法 Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 47
- 238000002161 passivation Methods 0.000 title description 11
- 239000010410 layer Substances 0.000 claims description 191
- 239000000463 material Substances 0.000 claims description 127
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 58
- 239000004065 semiconductor Substances 0.000 claims description 46
- 239000011241 protective layer Substances 0.000 claims description 43
- 229910052757 nitrogen Inorganic materials 0.000 claims description 29
- 238000009792 diffusion process Methods 0.000 claims description 26
- 238000000151 deposition Methods 0.000 claims description 11
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000000059 patterning Methods 0.000 claims description 5
- 229910002704 AlGaN Inorganic materials 0.000 claims description 4
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 47
- 229910002601 GaN Inorganic materials 0.000 description 46
- 230000008569 process Effects 0.000 description 29
- 230000015572 biosynthetic process Effects 0.000 description 23
- 238000000137 annealing Methods 0.000 description 22
- 230000015556 catabolic process Effects 0.000 description 17
- 230000005684 electric field Effects 0.000 description 14
- 230000000694 effects Effects 0.000 description 13
- 230000006378 damage Effects 0.000 description 11
- 230000010287 polarization Effects 0.000 description 11
- 230000008021 deposition Effects 0.000 description 10
- 230000004888 barrier function Effects 0.000 description 8
- 239000012212 insulator Substances 0.000 description 8
- 230000002441 reversible effect Effects 0.000 description 8
- 239000000758 substrate Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 230000008901 benefit Effects 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 229920002120 photoresistant polymer Polymers 0.000 description 5
- 239000002344 surface layer Substances 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000013461 design Methods 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 229910052594 sapphire Inorganic materials 0.000 description 4
- 239000010980 sapphire Substances 0.000 description 4
- 230000002269 spontaneous effect Effects 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000001965 increasing effect Effects 0.000 description 3
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 230000001627 detrimental effect Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- 229910000807 Ga alloy Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- AUCDRFABNLOFRE-UHFFFAOYSA-N alumane;indium Chemical compound [AlH3].[In] AUCDRFABNLOFRE-UHFFFAOYSA-N 0.000 description 1
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005274 electronic transitions Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 230000005527 interface trap Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000003566 sealing material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005549 size reduction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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Description
Claims (15)
- III族窒化物半導体素子であって、
第1のIII族窒化物半導体層、及び該第1のIII族窒化物半導体層の上に形成された第2のIII族窒化物半導体層を含むヘテロ接合構造と、
前記第2のIII族窒化物半導体層を貫いて前記第1のIII族窒化物半導体層まで延びた開口部と、
前記開口部内の前記第1のIII族窒化物半導体層、及び前記開口部に隣接する前記第2のIII族窒化物半導体層の一部を覆い、前記第1のIII族窒化物半導体層及び前記第2のIII族窒化物半導体層から窒素の外部拡散を防止する保護層と、
前記保護層の上の前記開口部に形成され、前記保護層を介して前記第1のIII族窒化物半導体層の導電チャネルに接続された電極と、
を備える、素子。 - 請求項1に記載の素子であって、前記電極は、前記開口部に隣接する前記第2のIII族窒化物半導体の一部の上に形成される、素子。
- 請求項1に記載の素子であって、さらに、前記導電チャネルに接続されたショットキコンタクトを備える、素子。
- 請求項1に記載の素子であって、前記電極は、オーミックコンタクトである、素子。
- III族窒化物半導体素子を形成するための方法であって、
導電チャネルを備えた第1のIII族窒化物層を形成する工程と、
前記第1のIII族窒化物層の上に第2のIII族窒化物層を形成する工程と、
前記第2のIII族窒化物層に開口部を形成して、前記第1のIII族窒化物層を露出させる工程と、
前記第2のIII族窒化物層と前記開口部の底部との上に、前記第1のIII族窒化物層及び前記第2のIII族窒化物層から窒素の外部拡散を防止する高窒素層を形成する工程と、
前記高窒素層の上にオーミックコンタクト材料を蒸着する工程と、
低温アニールを実行して、前記オーミック材料を活性化する工程と、
を備える、方法。 - 請求項5に記載の方法であって、さらに、前記オーミック材料をパターニングして、前記開口部にオーミックコンタクトを形成する工程を備える、方法。
- 請求項5に記載の方法であって、さらに、前記オーミック材料をパターニングして、ゲートコンタクトを形成する工程を備える、方法。
- 請求項5に記載の方法であって、前記高窒素層は、エピタキシャル成長で形成される、方法。
- 請求項1に記載の素子であって、前記第1のIII族窒化物半導体層は、GaNを含む、素子。
- 請求項1に記載の素子であって、前記第2のIII族窒化物半導体層は、AlGaNを含む、素子。
- 請求項1に記載の素子であって、前記保護層は、AlNと、HfNと、非化学量論性の高ドープGaNと、スパッタ蒸着された高ドープGaNと、高ドープポリGaNと、AlGaNと、TiNと、InNと、導電金属窒化物と、から選択された材料かなる、素子。
- 請求項1に記載の素子であって、前記電極は、前記保護層を介して前記第1のIII族窒化物半導体層とオーミックコンタクトを形成する、素子。
- 請求項1に記載の素子であって、さらに前記第2のIII族窒化物半導体層の上に形成されたゲートと、該第2のIII族窒化物半導体層及び該ゲートの間に形成された別の保護層と、を備える、素子。
- 請求項13に記載の素子であって、前記別の保護層は、高ドープGaNを含む、素子。
- 請求項1に記載の素子であって、当該III族窒化物半導体素子は、高電子移動度トランジスタ(HEMT)を備える、素子。
Applications Claiming Priority (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US52763403P | 2003-12-05 | 2003-12-05 | |
US52762703P | 2003-12-05 | 2003-12-05 | |
US60/527,634 | 2003-12-05 | ||
US60/527,627 | 2003-12-05 | ||
US11/004,212 | 2004-12-03 | ||
US11/004,212 US7649215B2 (en) | 2003-12-05 | 2004-12-03 | III-nitride device passivation and method |
PCT/US2004/040605 WO2005057624A2 (en) | 2003-12-05 | 2004-12-06 | Iii-nitride device passivation and method |
Publications (2)
Publication Number | Publication Date |
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JP2007519231A JP2007519231A (ja) | 2007-07-12 |
JP5281748B2 true JP5281748B2 (ja) | 2013-09-04 |
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- 2004-12-06 JP JP2006542811A patent/JP5281748B2/ja active Active
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CN1890814A (zh) | 2007-01-03 |
CN1890814B (zh) | 2010-05-05 |
EP1690295A4 (en) | 2018-01-24 |
TWI258798B (en) | 2006-07-21 |
EP1690295A2 (en) | 2006-08-16 |
JP2007519231A (ja) | 2007-07-12 |
TW200537562A (en) | 2005-11-16 |
WO2005057624A3 (en) | 2005-09-01 |
US7649215B2 (en) | 2010-01-19 |
WO2005057624A2 (en) | 2005-06-23 |
US20060006413A1 (en) | 2006-01-12 |
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