JP4803153B2 - 固体撮像装置とその製造方法および撮像装置 - Google Patents

固体撮像装置とその製造方法および撮像装置 Download PDF

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Publication number
JP4803153B2
JP4803153B2 JP2007265287A JP2007265287A JP4803153B2 JP 4803153 B2 JP4803153 B2 JP 4803153B2 JP 2007265287 A JP2007265287 A JP 2007265287A JP 2007265287 A JP2007265287 A JP 2007265287A JP 4803153 B2 JP4803153 B2 JP 4803153B2
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Japan
Prior art keywords
film
light receiving
imaging device
solid
state imaging
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Expired - Fee Related
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JP2007265287A
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English (en)
Japanese (ja)
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JP2008306154A5 (enExample
JP2008306154A (ja
Inventor
到 押山
崇志 安藤
晋 檜山
哲司 山口
裕子 大岸
晴美 池田
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Sony Corp
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Sony Corp
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Application filed by Sony Corp filed Critical Sony Corp
Priority to JP2007265287A priority Critical patent/JP4803153B2/ja
Priority to US12/244,889 priority patent/US8288836B2/en
Priority to TW097138732A priority patent/TWI464866B/zh
Priority to KR1020080099843A priority patent/KR101531055B1/ko
Priority to CN200810161899XA priority patent/CN101409301B/zh
Publication of JP2008306154A publication Critical patent/JP2008306154A/ja
Priority to US12/763,615 priority patent/US8334552B2/en
Priority to US12/763,644 priority patent/US8034649B2/en
Publication of JP2008306154A5 publication Critical patent/JP2008306154A5/ja
Priority to US12/977,756 priority patent/US8471347B2/en
Priority to US12/977,766 priority patent/US8946840B2/en
Application granted granted Critical
Publication of JP4803153B2 publication Critical patent/JP4803153B2/ja
Priority to US14/570,784 priority patent/US9368536B2/en
Priority to KR1020150026536A priority patent/KR101596629B1/ko
Priority to US15/161,805 priority patent/US9735192B2/en
Priority to US15/667,556 priority patent/US10192921B2/en
Priority to US16/230,197 priority patent/US10770500B2/en
Expired - Fee Related legal-status Critical Current
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/151—Geometry or disposition of pixel elements, address lines or gate electrodes
    • H10F39/1515—Optical shielding
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/15—Charge-coupled device [CCD] image sensors
    • H10F39/156—CCD or CID colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
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    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8033—Photosensitive area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8057—Optical shielding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Light Receiving Elements (AREA)
JP2007265287A 2007-05-07 2007-10-11 固体撮像装置とその製造方法および撮像装置 Expired - Fee Related JP4803153B2 (ja)

Priority Applications (14)

Application Number Priority Date Filing Date Title
JP2007265287A JP4803153B2 (ja) 2007-05-07 2007-10-11 固体撮像装置とその製造方法および撮像装置
US12/244,889 US8288836B2 (en) 2007-05-07 2008-10-03 Solid state imaging device capable of supressing generation of dark current
TW097138732A TWI464866B (zh) 2007-05-07 2008-10-08 固體攝像裝置和其製造方法及攝像裝置
KR1020080099843A KR101531055B1 (ko) 2007-10-11 2008-10-10 촬상 장치, 고체 촬상 장치, 및 그 제조방법
CN200810161899XA CN101409301B (zh) 2007-10-11 2008-10-13 固态成像装置及其制造方法和成像装置
US12/763,615 US8334552B2 (en) 2007-05-07 2010-04-20 Solid state imaging device that suppresses generation of dark current, and imaging apparatus
US12/763,644 US8034649B2 (en) 2007-05-07 2010-04-20 Solid state imaging device, method of manufacturing the same, and imaging apparatus
US12/977,766 US8946840B2 (en) 2007-05-07 2010-12-23 Solid state imaging device, with suppressed dark current, method of manufacturing, and imaging apparatus
US12/977,756 US8471347B2 (en) 2007-05-07 2010-12-23 Solid-state imaging device capable of suppressing generation of dark current and imaging apparatus
US14/570,784 US9368536B2 (en) 2007-05-07 2014-12-15 Solid state imaging device for reducing dark current, method of manufacturing the same, and imaging apparatus
KR1020150026536A KR101596629B1 (ko) 2007-10-11 2015-02-25 촬상 장치, 고체 촬상 장치, 및 그 제조방법
US15/161,805 US9735192B2 (en) 2007-05-07 2016-05-23 Solid state imaging device for reducing dark current and imaging apparatus
US15/667,556 US10192921B2 (en) 2007-05-07 2017-08-02 Solid state imaging device for reducing dark current, method of manufacturing the same, and imaging apparatus
US16/230,197 US10770500B2 (en) 2007-05-07 2018-12-21 Solid state imaging device for reducing dark current

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2007122370 2007-05-07
JP2007122370 2007-05-07
JP2007265287A JP4803153B2 (ja) 2007-05-07 2007-10-11 固体撮像装置とその製造方法および撮像装置

Related Child Applications (3)

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JP2010146816A Division JP4883207B2 (ja) 2007-05-07 2010-06-28 固体撮像装置とその製造方法および撮像装置
JP2010146815A Division JP4821918B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置
JP2010146814A Division JP4821917B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置

Publications (3)

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JP2008306154A JP2008306154A (ja) 2008-12-18
JP2008306154A5 JP2008306154A5 (enExample) 2010-04-22
JP4803153B2 true JP4803153B2 (ja) 2011-10-26

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JP2007265287A Expired - Fee Related JP4803153B2 (ja) 2007-05-07 2007-10-11 固体撮像装置とその製造方法および撮像装置
JP2007333691A Active JP4798130B2 (ja) 2007-05-07 2007-12-26 固体撮像装置の製造方法
JP2010146816A Expired - Fee Related JP4883207B2 (ja) 2007-05-07 2010-06-28 固体撮像装置とその製造方法および撮像装置
JP2010146815A Active JP4821918B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置
JP2010146814A Expired - Fee Related JP4821917B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置

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JP2007333691A Active JP4798130B2 (ja) 2007-05-07 2007-12-26 固体撮像装置の製造方法
JP2010146816A Expired - Fee Related JP4883207B2 (ja) 2007-05-07 2010-06-28 固体撮像装置とその製造方法および撮像装置
JP2010146815A Active JP4821918B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置
JP2010146814A Expired - Fee Related JP4821917B2 (ja) 2007-05-07 2010-06-28 固体撮像装置および撮像装置

Country Status (7)

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US (14) US8410418B2 (enExample)
EP (1) EP2146376B1 (enExample)
JP (5) JP4803153B2 (enExample)
KR (2) KR101558120B1 (enExample)
CN (6) CN102324431B (enExample)
TW (5) TWI436474B (enExample)
WO (1) WO2008139644A1 (enExample)

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