JP4564742B2 - 露光装置及びデバイス製造方法 - Google Patents

露光装置及びデバイス製造方法 Download PDF

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Publication number
JP4564742B2
JP4564742B2 JP2003404023A JP2003404023A JP4564742B2 JP 4564742 B2 JP4564742 B2 JP 4564742B2 JP 2003404023 A JP2003404023 A JP 2003404023A JP 2003404023 A JP2003404023 A JP 2003404023A JP 4564742 B2 JP4564742 B2 JP 4564742B2
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JP
Japan
Prior art keywords
mask
particles
chamber
vacuum
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
JP2003404023A
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English (en)
Japanese (ja)
Other versions
JP2005166970A (ja
JP2005166970A5 (enExample
Inventor
良 江渡
雅見 米川
真一 原
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP2003404023A priority Critical patent/JP4564742B2/ja
Priority to US11/001,116 priority patent/US7670754B2/en
Publication of JP2005166970A publication Critical patent/JP2005166970A/ja
Publication of JP2005166970A5 publication Critical patent/JP2005166970A5/ja
Application granted granted Critical
Publication of JP4564742B2 publication Critical patent/JP4564742B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H01L21/67173Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/70741Handling masks outside exposure position, e.g. reticle libraries
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691Handling of masks or workpieces
    • G03F7/70733Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
    • G03F7/7075Handling workpieces outside exposure position, e.g. SMIF box
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70841Constructional issues related to vacuum environment, e.g. load-lock chamber
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70916Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70Microphotolithographic exposure; Apparatus therefor
    • G03F7/708Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70908Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
    • G03F7/70925Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67155Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67225Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S134/00Cleaning and liquid contact with solids
    • Y10S134/902Semiconductor wafer
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S414/00Material or article handling
    • Y10S414/135Associated with semiconductor wafer handling
    • Y10S414/14Wafer cassette transporting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Environmental & Geological Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Library & Information Science (AREA)
  • Plasma & Fusion (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Cleaning In General (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
JP2003404023A 2003-12-03 2003-12-03 露光装置及びデバイス製造方法 Expired - Fee Related JP4564742B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2003404023A JP4564742B2 (ja) 2003-12-03 2003-12-03 露光装置及びデバイス製造方法
US11/001,116 US7670754B2 (en) 2003-12-03 2004-12-02 Exposure apparatus having a processing chamber, a vacuum chamber and first and second load lock chambers

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003404023A JP4564742B2 (ja) 2003-12-03 2003-12-03 露光装置及びデバイス製造方法

Publications (3)

Publication Number Publication Date
JP2005166970A JP2005166970A (ja) 2005-06-23
JP2005166970A5 JP2005166970A5 (enExample) 2007-01-25
JP4564742B2 true JP4564742B2 (ja) 2010-10-20

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Country Status (2)

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US (1) US7670754B2 (enExample)
JP (1) JP4564742B2 (enExample)

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1627946A3 (en) * 2000-08-08 2006-04-19 LG Electronics, Inc. Method and device for display use of a washing machine
US20050225308A1 (en) * 2004-03-31 2005-10-13 Orvek Kevin J Real-time monitoring of particles in semiconductor vacuum environment
KR20070029716A (ko) * 2004-05-28 2007-03-14 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 마스크 기판 세척 장치 및 방법
US7461663B2 (en) * 2004-09-01 2008-12-09 Sanyo Electric Co., Ltd. Cleaning apparatus
JP2006245257A (ja) * 2005-03-03 2006-09-14 Canon Inc 処理装置、当該処理装置を有する露光装置、保護機構
JP2006351595A (ja) * 2005-06-13 2006-12-28 Hitachi High-Technologies Corp 基板処理装置、基板処理方法、及び基板の製造方法
JP4817293B2 (ja) * 2005-10-26 2011-11-16 旭サナック株式会社 ワーク洗浄方法及びワーク洗浄システム
KR101206775B1 (ko) * 2006-06-02 2012-11-30 주식회사 케이씨텍 기판 척 세정 장치 및 세정 방법
US20080045030A1 (en) * 2006-08-15 2008-02-21 Shigeru Tahara Substrate processing method, substrate processing system and storage medium
CN101496199B (zh) * 2006-10-10 2010-12-22 松下电器产业株式会社 非水电解质二次电池用负极
EP2102711A1 (en) * 2006-12-08 2009-09-23 Canon Kabushiki Kaisha Exposure appararus
JP5098019B2 (ja) * 2007-04-27 2012-12-12 ギガフォトン株式会社 極端紫外光源装置
EP2077467B9 (fr) * 2008-01-04 2014-09-03 Adixen Vacuum Products Procédé de fabrication de photomasques et dispositif pour sa mise en oeuvre
KR101253825B1 (ko) * 2008-03-05 2013-04-12 알까뗄 루슨트 포토마스크 제조 방법
NL1036785A1 (nl) 2008-04-18 2009-10-20 Asml Netherlands Bv Rapid exchange device for lithography reticles.
JP2009294439A (ja) * 2008-06-05 2009-12-17 Toshiba Corp レジストパターン形成方法
DE102009016319A1 (de) * 2009-04-06 2010-10-14 Carl Zeiss Smt Ag Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage
EP2302670A1 (en) * 2009-09-28 2011-03-30 Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO Place station for a pick-and-place machine
NL2005463A (en) * 2009-12-16 2011-06-20 Asml Netherlands Bv Lithographic apparatus and device manufacturing method.
JP2013532354A (ja) 2010-05-28 2013-08-15 アクセリス テクノロジーズ, インコーポレイテッド 冷却されるイオン注入システムのための加熱回転式のシールおよび軸受け
US8481969B2 (en) 2010-06-04 2013-07-09 Axcelis Technologies, Inc. Effective algorithm for warming a twist axis for cold ion implantations
KR101199208B1 (ko) * 2011-03-16 2012-11-07 삼성에스디아이 주식회사 용접기용 스패터 포집 장치
EP3693990B1 (en) * 2011-06-23 2023-06-07 Brooks Automation (Germany) GmbH Semiconductor cleaner systems and methods
JP2013041947A (ja) * 2011-08-12 2013-02-28 Canon Inc リソグラフィ装置及び物品の製造方法
JP5867916B2 (ja) * 2011-12-06 2016-02-24 国立研究開発法人産業技術総合研究所 露光装置および露光方法
US9711324B2 (en) * 2012-05-31 2017-07-18 Axcelis Technologies, Inc. Inert atmospheric pressure pre-chill and post-heat
JP6071325B2 (ja) * 2012-08-21 2017-02-01 キヤノン株式会社 露光装置、露光方法及び物品の製造方法
JP2015088680A (ja) * 2013-11-01 2015-05-07 株式会社ニューフレアテクノロジー 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法
JP2015099937A (ja) * 2015-02-19 2015-05-28 東京エレクトロン株式会社 基板洗浄方法及び基板処理装置
JP2016180976A (ja) * 2015-03-24 2016-10-13 ネオ セミテック. カンパニー リミテッドNEO SEMITECH. Co., Ltd フォトマスク検査装置および検査方法
US10459352B2 (en) * 2015-08-31 2019-10-29 Taiwan Semiconductor Manufacturing Company, Ltd. Mask cleaning
KR102502727B1 (ko) * 2015-11-09 2023-02-23 삼성전자주식회사 레티클 및 그를 포함하는 노광 장치
CN110313060B (zh) * 2017-02-24 2023-10-24 东京毅力科创株式会社 基板处理系统
KR102779070B1 (ko) * 2018-02-23 2025-03-07 에이에스엠엘 네델란즈 비.브이. 정화 장치 및 정화 방법
EP3871043A1 (en) * 2018-10-23 2021-09-01 ASML Netherlands B.V. Inspection apparatus
DE102019201762A1 (de) * 2019-02-12 2020-08-13 Carl Zeiss Smt Gmbh Vorrichtung und Verfahren zur Charakterisierung der Oberflächenform eines Testobjekts
KR102825313B1 (ko) * 2019-07-19 2025-06-27 삼성전자주식회사 Euv 레티클 관리 방법 및 그를 포함하는 반도체 소자의 제조 방법
WO2021050070A1 (en) 2019-09-12 2021-03-18 Hewlett-Packard Development Company, L.P. Automated conveyance of articles in chemical vapor processing
CN110676199B (zh) * 2019-10-16 2022-04-22 深圳市迈诺为智能科技有限公司 一种高速装片刻印机
KR102388390B1 (ko) * 2020-01-06 2022-04-21 세메스 주식회사 로드 포트 유닛, 이를 포함하는 저장 장치 및 배기 방법
CN111736425B (zh) * 2020-06-15 2021-08-31 上海集成电路研发中心有限公司 一种光掩模板保护装置
US11579539B2 (en) * 2021-03-03 2023-02-14 Taiwan Semiconductor Manufacturing Company, Ltd. Method and apparatus for improving critical dimension variation

Family Cites Families (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4718975A (en) * 1986-10-06 1988-01-12 Texas Instruments Incorporated Particle shield
JPH06110197A (ja) 1992-08-10 1994-04-22 Hitachi Ltd 微細パターン形成用マスク形成方法及びその装置
JPH06196390A (ja) 1992-12-22 1994-07-15 Canon Inc バルブの制御方法及びこれを用いたシステム
JPH06338446A (ja) 1993-05-31 1994-12-06 Hitachi Ltd 荷電粒子線露光装置およびそれによる描画方法
JP3654597B2 (ja) 1993-07-15 2005-06-02 株式会社ルネサステクノロジ 製造システムおよび製造方法
JP3308967B2 (ja) 1993-07-21 2002-07-29 キヤノン株式会社 処理システム及びデバイス製造方法
JP3445257B2 (ja) 1993-07-21 2003-09-08 キヤノン株式会社 処理システム及びこれを用いた露光装置およびデバイス製造方法
JP3200282B2 (ja) 1993-07-21 2001-08-20 キヤノン株式会社 処理システム及びこれを用いたデバイス製造方法
WO1995006900A1 (en) 1993-09-03 1995-03-09 Hitachi, Ltd. Method and apparatus for pattern formation
JPH07254556A (ja) 1993-09-03 1995-10-03 Hitachi Ltd パターン形成方法および形成装置
JP3157972B2 (ja) 1993-11-17 2001-04-23 キヤノン株式会社 X線露光方法
JPH0945756A (ja) 1995-07-26 1997-02-14 Hitachi Ltd 半導体製造装置および製造方法
JPH1092724A (ja) 1996-09-18 1998-04-10 Nikon Corp ロードロック室
JPH10223512A (ja) * 1997-02-10 1998-08-21 Nikon Corp 電子ビーム投影露光装置
US5914493A (en) 1997-02-21 1999-06-22 Nikon Corporation Charged-particle-beam exposure apparatus and methods with substrate-temperature control
JPH1126370A (ja) 1997-07-08 1999-01-29 Nikon Corp 露光前処理装置
JPH10233423A (ja) 1997-02-21 1998-09-02 Nikon Corp ロードロック式真空処理装置
JP2000123111A (ja) 1998-10-20 2000-04-28 Dainippon Printing Co Ltd 金属面の画像入力方法
JP2000228354A (ja) 1999-02-09 2000-08-15 Nikon Corp 転写露光装置
WO2000055891A1 (en) * 1999-03-12 2000-09-21 Nikon Corporation Exposure device, exposure method, and device manufacturing method
JP2000349005A (ja) * 1999-06-03 2000-12-15 Nikon Corp 露光装置及び半導体デバイス製造方法
JP2000353649A (ja) * 1999-06-09 2000-12-19 Tokyo Electron Ltd 基板処理装置および基板処理方法
JP2001085290A (ja) 1999-09-09 2001-03-30 Nikon Corp 半導体露光装置とデバイス製造方法
JP2001102281A (ja) 1999-09-28 2001-04-13 Canon Inc ロードロック室、チャンバ、半導体製造装置およびデバイス製造方法
JP2001118904A (ja) * 1999-10-19 2001-04-27 Canon Inc ロードロック室を備えた基板処理装置および被処理基板の搬送方法
JP2001210576A (ja) 2000-01-25 2001-08-03 Nikon Corp 荷重キャンセル機構、真空チャンバ結合体、露光装置及び半導体デバイスの製造方法
JP2001267200A (ja) 2000-03-14 2001-09-28 Nikon Corp ガス置換方法及び装置、並びに露光方法及び装置
JP2001267237A (ja) 2000-03-23 2001-09-28 Canon Inc 露光装置および露光方法
JP3676983B2 (ja) * 2000-03-29 2005-07-27 株式会社日立国際電気 半導体製造方法、基板処理方法、及び半導体製造装置
JP2001284218A (ja) 2000-03-30 2001-10-12 Canon Inc 保管庫、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP4689064B2 (ja) 2000-03-30 2011-05-25 キヤノン株式会社 露光装置およびデバイス製造方法
JP3976981B2 (ja) 2000-03-30 2007-09-19 キヤノン株式会社 露光装置、ガス置換方法、デバイス製造方法
JP3869999B2 (ja) 2000-03-30 2007-01-17 キヤノン株式会社 露光装置および半導体デバイス製造方法
JP2002057100A (ja) 2000-05-31 2002-02-22 Canon Inc 露光装置、コートデベロップ装置、デバイス製造システム、デバイス製造方法、半導体製造工場および露光装置の保守方法
JP4560182B2 (ja) 2000-07-06 2010-10-13 キヤノン株式会社 減圧処理装置、半導体製造装置およびデバイス製造方法
JP2002035709A (ja) * 2000-07-25 2002-02-05 Japan Steel Works Ltd:The レーザクリーニング処理におけるパーティクルの捕集装置及び捕集方法
US6455821B1 (en) 2000-08-17 2002-09-24 Nikon Corporation System and method to control temperature of an article
JP2002100573A (ja) * 2000-09-25 2002-04-05 Nec Corp 半導体製造装置および半導体製造方法
JP2002158155A (ja) 2000-11-17 2002-05-31 Canon Inc 露光装置および露光方法
US6924492B2 (en) * 2000-12-22 2005-08-02 Asml Netherlands B.V. Lithographic apparatus, device manufacturing method, and device manufactured thereby
JP2002303695A (ja) 2001-04-03 2002-10-18 Nikon Corp 多層膜反射鏡、多層膜の剥離方法及び露光装置
JP2003031639A (ja) 2001-07-17 2003-01-31 Canon Inc 基板処理装置、基板の搬送方法及び露光装置
JP2003045947A (ja) 2001-07-27 2003-02-14 Canon Inc 基板処理装置及び露光装置
JP2003227898A (ja) 2002-02-01 2003-08-15 Nikon Corp 多層膜反射鏡、軟x線光学機器、露光装置及びその清掃方法
EP1333323A3 (en) 2002-02-01 2004-10-06 Nikon Corporation Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same
JP2003234268A (ja) * 2002-02-07 2003-08-22 Nikon Corp 露光装置
JP4040499B2 (ja) * 2003-03-06 2008-01-30 キヤノン株式会社 ロードロック室、処理システム及び処理方法

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