JP4564742B2 - 露光装置及びデバイス製造方法 - Google Patents
露光装置及びデバイス製造方法 Download PDFInfo
- Publication number
- JP4564742B2 JP4564742B2 JP2003404023A JP2003404023A JP4564742B2 JP 4564742 B2 JP4564742 B2 JP 4564742B2 JP 2003404023 A JP2003404023 A JP 2003404023A JP 2003404023 A JP2003404023 A JP 2003404023A JP 4564742 B2 JP4564742 B2 JP 4564742B2
- Authority
- JP
- Japan
- Prior art keywords
- mask
- particles
- chamber
- vacuum
- atmosphere
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/70741—Handling masks outside exposure position, e.g. reticle libraries
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/70733—Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask
- G03F7/7075—Handling workpieces outside exposure position, e.g. SMIF box
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
- G03F7/70841—Constructional issues related to vacuum environment, e.g. load-lock chamber
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70916—Pollution mitigation, i.e. mitigating effect of contamination or debris, e.g. foil traps
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
- H01L21/67225—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S134/00—Cleaning and liquid contact with solids
- Y10S134/902—Semiconductor wafer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S414/00—Material or article handling
- Y10S414/135—Associated with semiconductor wafer handling
- Y10S414/14—Wafer cassette transporting
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Environmental & Geological Engineering (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Atmospheric Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Library & Information Science (AREA)
- Plasma & Fusion (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Cleaning In General (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404023A JP4564742B2 (ja) | 2003-12-03 | 2003-12-03 | 露光装置及びデバイス製造方法 |
| US11/001,116 US7670754B2 (en) | 2003-12-03 | 2004-12-02 | Exposure apparatus having a processing chamber, a vacuum chamber and first and second load lock chambers |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003404023A JP4564742B2 (ja) | 2003-12-03 | 2003-12-03 | 露光装置及びデバイス製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2005166970A JP2005166970A (ja) | 2005-06-23 |
| JP2005166970A5 JP2005166970A5 (enExample) | 2007-01-25 |
| JP4564742B2 true JP4564742B2 (ja) | 2010-10-20 |
Family
ID=34631669
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2003404023A Expired - Fee Related JP4564742B2 (ja) | 2003-12-03 | 2003-12-03 | 露光装置及びデバイス製造方法 |
Country Status (2)
| Country | Link |
|---|---|
| US (1) | US7670754B2 (enExample) |
| JP (1) | JP4564742B2 (enExample) |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1627946A3 (en) * | 2000-08-08 | 2006-04-19 | LG Electronics, Inc. | Method and device for display use of a washing machine |
| US20050225308A1 (en) * | 2004-03-31 | 2005-10-13 | Orvek Kevin J | Real-time monitoring of particles in semiconductor vacuum environment |
| KR20070029716A (ko) * | 2004-05-28 | 2007-03-14 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 마스크 기판 세척 장치 및 방법 |
| US7461663B2 (en) * | 2004-09-01 | 2008-12-09 | Sanyo Electric Co., Ltd. | Cleaning apparatus |
| JP2006245257A (ja) * | 2005-03-03 | 2006-09-14 | Canon Inc | 処理装置、当該処理装置を有する露光装置、保護機構 |
| JP2006351595A (ja) * | 2005-06-13 | 2006-12-28 | Hitachi High-Technologies Corp | 基板処理装置、基板処理方法、及び基板の製造方法 |
| JP4817293B2 (ja) * | 2005-10-26 | 2011-11-16 | 旭サナック株式会社 | ワーク洗浄方法及びワーク洗浄システム |
| KR101206775B1 (ko) * | 2006-06-02 | 2012-11-30 | 주식회사 케이씨텍 | 기판 척 세정 장치 및 세정 방법 |
| US20080045030A1 (en) * | 2006-08-15 | 2008-02-21 | Shigeru Tahara | Substrate processing method, substrate processing system and storage medium |
| CN101496199B (zh) * | 2006-10-10 | 2010-12-22 | 松下电器产业株式会社 | 非水电解质二次电池用负极 |
| EP2102711A1 (en) * | 2006-12-08 | 2009-09-23 | Canon Kabushiki Kaisha | Exposure appararus |
| JP5098019B2 (ja) * | 2007-04-27 | 2012-12-12 | ギガフォトン株式会社 | 極端紫外光源装置 |
| EP2077467B9 (fr) * | 2008-01-04 | 2014-09-03 | Adixen Vacuum Products | Procédé de fabrication de photomasques et dispositif pour sa mise en oeuvre |
| KR101253825B1 (ko) * | 2008-03-05 | 2013-04-12 | 알까뗄 루슨트 | 포토마스크 제조 방법 |
| NL1036785A1 (nl) | 2008-04-18 | 2009-10-20 | Asml Netherlands Bv | Rapid exchange device for lithography reticles. |
| JP2009294439A (ja) * | 2008-06-05 | 2009-12-17 | Toshiba Corp | レジストパターン形成方法 |
| DE102009016319A1 (de) * | 2009-04-06 | 2010-10-14 | Carl Zeiss Smt Ag | Verfahren zur Kontaminationsvermeidung und EUV-Lithographieanlage |
| EP2302670A1 (en) * | 2009-09-28 | 2011-03-30 | Nederlandse Organisatie voor toegepast -natuurwetenschappelijk onderzoek TNO | Place station for a pick-and-place machine |
| NL2005463A (en) * | 2009-12-16 | 2011-06-20 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
| JP2013532354A (ja) | 2010-05-28 | 2013-08-15 | アクセリス テクノロジーズ, インコーポレイテッド | 冷却されるイオン注入システムのための加熱回転式のシールおよび軸受け |
| US8481969B2 (en) | 2010-06-04 | 2013-07-09 | Axcelis Technologies, Inc. | Effective algorithm for warming a twist axis for cold ion implantations |
| KR101199208B1 (ko) * | 2011-03-16 | 2012-11-07 | 삼성에스디아이 주식회사 | 용접기용 스패터 포집 장치 |
| EP3693990B1 (en) * | 2011-06-23 | 2023-06-07 | Brooks Automation (Germany) GmbH | Semiconductor cleaner systems and methods |
| JP2013041947A (ja) * | 2011-08-12 | 2013-02-28 | Canon Inc | リソグラフィ装置及び物品の製造方法 |
| JP5867916B2 (ja) * | 2011-12-06 | 2016-02-24 | 国立研究開発法人産業技術総合研究所 | 露光装置および露光方法 |
| US9711324B2 (en) * | 2012-05-31 | 2017-07-18 | Axcelis Technologies, Inc. | Inert atmospheric pressure pre-chill and post-heat |
| JP6071325B2 (ja) * | 2012-08-21 | 2017-02-01 | キヤノン株式会社 | 露光装置、露光方法及び物品の製造方法 |
| JP2015088680A (ja) * | 2013-11-01 | 2015-05-07 | 株式会社ニューフレアテクノロジー | 荷電粒子ビーム描画装置及び荷電粒子ビーム描画方法 |
| JP2015099937A (ja) * | 2015-02-19 | 2015-05-28 | 東京エレクトロン株式会社 | 基板洗浄方法及び基板処理装置 |
| JP2016180976A (ja) * | 2015-03-24 | 2016-10-13 | ネオ セミテック. カンパニー リミテッドNEO SEMITECH. Co., Ltd | フォトマスク検査装置および検査方法 |
| US10459352B2 (en) * | 2015-08-31 | 2019-10-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | Mask cleaning |
| KR102502727B1 (ko) * | 2015-11-09 | 2023-02-23 | 삼성전자주식회사 | 레티클 및 그를 포함하는 노광 장치 |
| CN110313060B (zh) * | 2017-02-24 | 2023-10-24 | 东京毅力科创株式会社 | 基板处理系统 |
| KR102779070B1 (ko) * | 2018-02-23 | 2025-03-07 | 에이에스엠엘 네델란즈 비.브이. | 정화 장치 및 정화 방법 |
| EP3871043A1 (en) * | 2018-10-23 | 2021-09-01 | ASML Netherlands B.V. | Inspection apparatus |
| DE102019201762A1 (de) * | 2019-02-12 | 2020-08-13 | Carl Zeiss Smt Gmbh | Vorrichtung und Verfahren zur Charakterisierung der Oberflächenform eines Testobjekts |
| KR102825313B1 (ko) * | 2019-07-19 | 2025-06-27 | 삼성전자주식회사 | Euv 레티클 관리 방법 및 그를 포함하는 반도체 소자의 제조 방법 |
| WO2021050070A1 (en) | 2019-09-12 | 2021-03-18 | Hewlett-Packard Development Company, L.P. | Automated conveyance of articles in chemical vapor processing |
| CN110676199B (zh) * | 2019-10-16 | 2022-04-22 | 深圳市迈诺为智能科技有限公司 | 一种高速装片刻印机 |
| KR102388390B1 (ko) * | 2020-01-06 | 2022-04-21 | 세메스 주식회사 | 로드 포트 유닛, 이를 포함하는 저장 장치 및 배기 방법 |
| CN111736425B (zh) * | 2020-06-15 | 2021-08-31 | 上海集成电路研发中心有限公司 | 一种光掩模板保护装置 |
| US11579539B2 (en) * | 2021-03-03 | 2023-02-14 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method and apparatus for improving critical dimension variation |
Family Cites Families (47)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4718975A (en) * | 1986-10-06 | 1988-01-12 | Texas Instruments Incorporated | Particle shield |
| JPH06110197A (ja) | 1992-08-10 | 1994-04-22 | Hitachi Ltd | 微細パターン形成用マスク形成方法及びその装置 |
| JPH06196390A (ja) | 1992-12-22 | 1994-07-15 | Canon Inc | バルブの制御方法及びこれを用いたシステム |
| JPH06338446A (ja) | 1993-05-31 | 1994-12-06 | Hitachi Ltd | 荷電粒子線露光装置およびそれによる描画方法 |
| JP3654597B2 (ja) | 1993-07-15 | 2005-06-02 | 株式会社ルネサステクノロジ | 製造システムおよび製造方法 |
| JP3308967B2 (ja) | 1993-07-21 | 2002-07-29 | キヤノン株式会社 | 処理システム及びデバイス製造方法 |
| JP3445257B2 (ja) | 1993-07-21 | 2003-09-08 | キヤノン株式会社 | 処理システム及びこれを用いた露光装置およびデバイス製造方法 |
| JP3200282B2 (ja) | 1993-07-21 | 2001-08-20 | キヤノン株式会社 | 処理システム及びこれを用いたデバイス製造方法 |
| WO1995006900A1 (en) | 1993-09-03 | 1995-03-09 | Hitachi, Ltd. | Method and apparatus for pattern formation |
| JPH07254556A (ja) | 1993-09-03 | 1995-10-03 | Hitachi Ltd | パターン形成方法および形成装置 |
| JP3157972B2 (ja) | 1993-11-17 | 2001-04-23 | キヤノン株式会社 | X線露光方法 |
| JPH0945756A (ja) | 1995-07-26 | 1997-02-14 | Hitachi Ltd | 半導体製造装置および製造方法 |
| JPH1092724A (ja) | 1996-09-18 | 1998-04-10 | Nikon Corp | ロードロック室 |
| JPH10223512A (ja) * | 1997-02-10 | 1998-08-21 | Nikon Corp | 電子ビーム投影露光装置 |
| US5914493A (en) | 1997-02-21 | 1999-06-22 | Nikon Corporation | Charged-particle-beam exposure apparatus and methods with substrate-temperature control |
| JPH1126370A (ja) | 1997-07-08 | 1999-01-29 | Nikon Corp | 露光前処理装置 |
| JPH10233423A (ja) | 1997-02-21 | 1998-09-02 | Nikon Corp | ロードロック式真空処理装置 |
| JP2000123111A (ja) | 1998-10-20 | 2000-04-28 | Dainippon Printing Co Ltd | 金属面の画像入力方法 |
| JP2000228354A (ja) | 1999-02-09 | 2000-08-15 | Nikon Corp | 転写露光装置 |
| WO2000055891A1 (en) * | 1999-03-12 | 2000-09-21 | Nikon Corporation | Exposure device, exposure method, and device manufacturing method |
| JP2000349005A (ja) * | 1999-06-03 | 2000-12-15 | Nikon Corp | 露光装置及び半導体デバイス製造方法 |
| JP2000353649A (ja) * | 1999-06-09 | 2000-12-19 | Tokyo Electron Ltd | 基板処理装置および基板処理方法 |
| JP2001085290A (ja) | 1999-09-09 | 2001-03-30 | Nikon Corp | 半導体露光装置とデバイス製造方法 |
| JP2001102281A (ja) | 1999-09-28 | 2001-04-13 | Canon Inc | ロードロック室、チャンバ、半導体製造装置およびデバイス製造方法 |
| JP2001118904A (ja) * | 1999-10-19 | 2001-04-27 | Canon Inc | ロードロック室を備えた基板処理装置および被処理基板の搬送方法 |
| JP2001210576A (ja) | 2000-01-25 | 2001-08-03 | Nikon Corp | 荷重キャンセル機構、真空チャンバ結合体、露光装置及び半導体デバイスの製造方法 |
| JP2001267200A (ja) | 2000-03-14 | 2001-09-28 | Nikon Corp | ガス置換方法及び装置、並びに露光方法及び装置 |
| JP2001267237A (ja) | 2000-03-23 | 2001-09-28 | Canon Inc | 露光装置および露光方法 |
| JP3676983B2 (ja) * | 2000-03-29 | 2005-07-27 | 株式会社日立国際電気 | 半導体製造方法、基板処理方法、及び半導体製造装置 |
| JP2001284218A (ja) | 2000-03-30 | 2001-10-12 | Canon Inc | 保管庫、露光装置、デバイス製造方法、半導体製造工場および露光装置の保守方法 |
| JP4689064B2 (ja) | 2000-03-30 | 2011-05-25 | キヤノン株式会社 | 露光装置およびデバイス製造方法 |
| JP3976981B2 (ja) | 2000-03-30 | 2007-09-19 | キヤノン株式会社 | 露光装置、ガス置換方法、デバイス製造方法 |
| JP3869999B2 (ja) | 2000-03-30 | 2007-01-17 | キヤノン株式会社 | 露光装置および半導体デバイス製造方法 |
| JP2002057100A (ja) | 2000-05-31 | 2002-02-22 | Canon Inc | 露光装置、コートデベロップ装置、デバイス製造システム、デバイス製造方法、半導体製造工場および露光装置の保守方法 |
| JP4560182B2 (ja) | 2000-07-06 | 2010-10-13 | キヤノン株式会社 | 減圧処理装置、半導体製造装置およびデバイス製造方法 |
| JP2002035709A (ja) * | 2000-07-25 | 2002-02-05 | Japan Steel Works Ltd:The | レーザクリーニング処理におけるパーティクルの捕集装置及び捕集方法 |
| US6455821B1 (en) | 2000-08-17 | 2002-09-24 | Nikon Corporation | System and method to control temperature of an article |
| JP2002100573A (ja) * | 2000-09-25 | 2002-04-05 | Nec Corp | 半導体製造装置および半導体製造方法 |
| JP2002158155A (ja) | 2000-11-17 | 2002-05-31 | Canon Inc | 露光装置および露光方法 |
| US6924492B2 (en) * | 2000-12-22 | 2005-08-02 | Asml Netherlands B.V. | Lithographic apparatus, device manufacturing method, and device manufactured thereby |
| JP2002303695A (ja) | 2001-04-03 | 2002-10-18 | Nikon Corp | 多層膜反射鏡、多層膜の剥離方法及び露光装置 |
| JP2003031639A (ja) | 2001-07-17 | 2003-01-31 | Canon Inc | 基板処理装置、基板の搬送方法及び露光装置 |
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| JP2003227898A (ja) | 2002-02-01 | 2003-08-15 | Nikon Corp | 多層膜反射鏡、軟x線光学機器、露光装置及びその清掃方法 |
| EP1333323A3 (en) | 2002-02-01 | 2004-10-06 | Nikon Corporation | Self-cleaning reflective optical elements for use in x-ray optical systems, and optical systems and microlithography systems comprising same |
| JP2003234268A (ja) * | 2002-02-07 | 2003-08-22 | Nikon Corp | 露光装置 |
| JP4040499B2 (ja) * | 2003-03-06 | 2008-01-30 | キヤノン株式会社 | ロードロック室、処理システム及び処理方法 |
-
2003
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Also Published As
| Publication number | Publication date |
|---|---|
| US7670754B2 (en) | 2010-03-02 |
| US20050121144A1 (en) | 2005-06-09 |
| JP2005166970A (ja) | 2005-06-23 |
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