JP4027740B2 - 半導体装置の作製方法 - Google Patents
半導体装置の作製方法 Download PDFInfo
- Publication number
- JP4027740B2 JP4027740B2 JP2002207536A JP2002207536A JP4027740B2 JP 4027740 B2 JP4027740 B2 JP 4027740B2 JP 2002207536 A JP2002207536 A JP 2002207536A JP 2002207536 A JP2002207536 A JP 2002207536A JP 4027740 B2 JP4027740 B2 JP 4027740B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- film
- silicon oxide
- substrate
- forming
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000000034 method Methods 0.000 title claims description 152
- 239000004065 semiconductor Substances 0.000 title claims description 87
- 238000004519 manufacturing process Methods 0.000 title claims description 65
- 239000010408 film Substances 0.000 claims description 411
- 239000000758 substrate Substances 0.000 claims description 348
- 229910052751 metal Inorganic materials 0.000 claims description 100
- 239000002184 metal Substances 0.000 claims description 100
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 97
- 238000012546 transfer Methods 0.000 claims description 97
- 239000000463 material Substances 0.000 claims description 88
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 85
- 239000011521 glass Substances 0.000 claims description 41
- 229920003023 plastic Polymers 0.000 claims description 40
- 239000004033 plastic Substances 0.000 claims description 40
- 229910052721 tungsten Inorganic materials 0.000 claims description 39
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 38
- 229910052710 silicon Inorganic materials 0.000 claims description 38
- 239000010703 silicon Substances 0.000 claims description 38
- 239000004973 liquid crystal related substance Substances 0.000 claims description 35
- 239000010937 tungsten Substances 0.000 claims description 30
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 22
- -1 tungsten nitride Chemical class 0.000 claims description 22
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 17
- 239000000956 alloy Substances 0.000 claims description 15
- 229910044991 metal oxide Inorganic materials 0.000 claims description 14
- 150000004706 metal oxides Chemical class 0.000 claims description 14
- 239000010409 thin film Substances 0.000 claims description 13
- 239000000919 ceramic Substances 0.000 claims description 8
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 229910002064 alloy oxide Inorganic materials 0.000 claims 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 588
- 150000004767 nitrides Chemical class 0.000 description 90
- 239000012535 impurity Substances 0.000 description 54
- 238000005530 etching Methods 0.000 description 50
- 238000010438 heat treatment Methods 0.000 description 45
- 230000008569 process Effects 0.000 description 43
- 238000004544 sputter deposition Methods 0.000 description 42
- 230000015572 biosynthetic process Effects 0.000 description 35
- 230000004888 barrier function Effects 0.000 description 31
- 229910052760 oxygen Inorganic materials 0.000 description 30
- 239000002585 base Substances 0.000 description 29
- 239000007789 gas Substances 0.000 description 27
- 239000011159 matrix material Substances 0.000 description 27
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 25
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 21
- 239000001301 oxygen Substances 0.000 description 21
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 21
- 229910052739 hydrogen Inorganic materials 0.000 description 19
- 238000002425 crystallisation Methods 0.000 description 18
- 230000008025 crystallization Effects 0.000 description 18
- 238000010586 diagram Methods 0.000 description 18
- 238000002474 experimental method Methods 0.000 description 18
- 239000011229 interlayer Substances 0.000 description 18
- 239000012790 adhesive layer Substances 0.000 description 17
- 239000000565 sealant Substances 0.000 description 17
- 229910052581 Si3N4 Inorganic materials 0.000 description 16
- 239000000203 mixture Substances 0.000 description 16
- 229910052759 nickel Inorganic materials 0.000 description 16
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 16
- 239000002356 single layer Substances 0.000 description 16
- 239000007769 metal material Substances 0.000 description 15
- 239000011347 resin Substances 0.000 description 15
- 229920005989 resin Polymers 0.000 description 15
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 14
- 239000010453 quartz Substances 0.000 description 14
- 238000000926 separation method Methods 0.000 description 14
- 229910021417 amorphous silicon Inorganic materials 0.000 description 13
- 229910052782 aluminium Inorganic materials 0.000 description 12
- 150000001875 compounds Chemical class 0.000 description 12
- 230000006866 deterioration Effects 0.000 description 12
- 229910052757 nitrogen Inorganic materials 0.000 description 12
- 239000000853 adhesive Substances 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 11
- 229910052786 argon Inorganic materials 0.000 description 11
- 239000013078 crystal Substances 0.000 description 11
- 150000002894 organic compounds Chemical class 0.000 description 11
- 239000000126 substance Substances 0.000 description 11
- 238000000151 deposition Methods 0.000 description 10
- 230000008021 deposition Effects 0.000 description 10
- 239000001257 hydrogen Substances 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 229910052719 titanium Inorganic materials 0.000 description 10
- 239000010936 titanium Substances 0.000 description 10
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 229910052750 molybdenum Inorganic materials 0.000 description 9
- 239000002985 plastic film Substances 0.000 description 9
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 9
- 239000003566 sealing material Substances 0.000 description 9
- 125000006850 spacer group Chemical group 0.000 description 9
- 239000012298 atmosphere Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- 229920006255 plastic film Polymers 0.000 description 8
- 229920000139 polyethylene terephthalate Polymers 0.000 description 8
- 239000005020 polyethylene terephthalate Substances 0.000 description 8
- 229920005591 polysilicon Polymers 0.000 description 8
- 229910052715 tantalum Inorganic materials 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 229910052779 Neodymium Inorganic materials 0.000 description 7
- 239000000460 chlorine Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 150000002500 ions Chemical class 0.000 description 7
- 229910052741 iridium Inorganic materials 0.000 description 7
- 229910052742 iron Inorganic materials 0.000 description 7
- 229910052762 osmium Inorganic materials 0.000 description 7
- 229910052763 palladium Inorganic materials 0.000 description 7
- 229920001721 polyimide Polymers 0.000 description 7
- 229910052703 rhodium Inorganic materials 0.000 description 7
- 229910052707 ruthenium Inorganic materials 0.000 description 7
- 238000007789 sealing Methods 0.000 description 7
- 238000003860 storage Methods 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 239000011701 zinc Substances 0.000 description 7
- 229910052726 zirconium Inorganic materials 0.000 description 7
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 6
- 239000004642 Polyimide Substances 0.000 description 6
- 229910000676 Si alloy Inorganic materials 0.000 description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical group [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000003990 capacitor Substances 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 239000003822 epoxy resin Substances 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 229920000647 polyepoxide Polymers 0.000 description 6
- 238000000624 total reflection X-ray fluorescence spectroscopy Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 5
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 5
- 229910001413 alkali metal ion Inorganic materials 0.000 description 5
- 229910001420 alkaline earth metal ion Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 229910052731 fluorine Inorganic materials 0.000 description 5
- 239000011737 fluorine Substances 0.000 description 5
- 238000005247 gettering Methods 0.000 description 5
- 229910052698 phosphorus Inorganic materials 0.000 description 5
- 239000011574 phosphorus Substances 0.000 description 5
- 229910052697 platinum Inorganic materials 0.000 description 5
- 239000004417 polycarbonate Substances 0.000 description 5
- 229920000515 polycarbonate Polymers 0.000 description 5
- 239000011112 polyethylene naphthalate Substances 0.000 description 5
- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 239000002390 adhesive tape Substances 0.000 description 4
- LJCFOYOSGPHIOO-UHFFFAOYSA-N antimony pentoxide Chemical compound O=[Sb](=O)O[Sb](=O)=O LJCFOYOSGPHIOO-UHFFFAOYSA-N 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 239000000945 filler Substances 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 229920003207 poly(ethylene-2,6-naphthalate) Polymers 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 3
- 230000001133 acceleration Effects 0.000 description 3
- 238000001994 activation Methods 0.000 description 3
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 3
- GPBUGPUPKAGMDK-UHFFFAOYSA-N azanylidynemolybdenum Chemical compound [Mo]#N GPBUGPUPKAGMDK-UHFFFAOYSA-N 0.000 description 3
- 238000006356 dehydrogenation reaction Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000010790 dilution Methods 0.000 description 3
- 239000012895 dilution Substances 0.000 description 3
- 238000005984 hydrogenation reaction Methods 0.000 description 3
- 238000009616 inductively coupled plasma Methods 0.000 description 3
- 229910010272 inorganic material Inorganic materials 0.000 description 3
- 239000011147 inorganic material Substances 0.000 description 3
- 230000001678 irradiating effect Effects 0.000 description 3
- 238000003475 lamination Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- AIYYMMQIMJOTBM-UHFFFAOYSA-L nickel(ii) acetate Chemical compound [Ni+2].CC([O-])=O.CC([O-])=O AIYYMMQIMJOTBM-UHFFFAOYSA-L 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000001737 promoting effect Effects 0.000 description 3
- 238000001552 radio frequency sputter deposition Methods 0.000 description 3
- 239000012266 salt solution Substances 0.000 description 3
- 238000003892 spreading Methods 0.000 description 3
- 230000007480 spreading Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 description 2
- 239000004695 Polyether sulfone Substances 0.000 description 2
- 239000004697 Polyetherimide Substances 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 2
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 239000002274 desiccant Substances 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 230000005281 excited state Effects 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000005499 laser crystallization Methods 0.000 description 2
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- 229920002492 poly(sulfone) Polymers 0.000 description 2
- 229920001230 polyarylate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920006393 polyether sulfone Polymers 0.000 description 2
- 229920001601 polyetherimide Polymers 0.000 description 2
- 229920000573 polyethylene Polymers 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 2
- 239000007790 solid phase Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 230000003746 surface roughness Effects 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- OYQCBJZGELKKPM-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O-2].[Zn+2].[O-2].[In+3] OYQCBJZGELKKPM-UHFFFAOYSA-N 0.000 description 2
- 229910017109 AlON Inorganic materials 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- 229910018575 Al—Ti Inorganic materials 0.000 description 1
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 239000004677 Nylon Substances 0.000 description 1
- 229920012266 Poly(ether sulfone) PES Polymers 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910001069 Ti alloy Inorganic materials 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 229910052783 alkali metal Inorganic materials 0.000 description 1
- 150000001340 alkali metals Chemical class 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 150000001463 antimony compounds Chemical class 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000007872 degassing Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 229920002457 flexible plastic Polymers 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002576 ketones Chemical class 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
Images
Landscapes
- Electroluminescent Light Sources (AREA)
- Thin Film Transistor (AREA)
- Liquid Crystal (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2002207536A JP4027740B2 (ja) | 2001-07-16 | 2002-07-16 | 半導体装置の作製方法 |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001-216018 | 2001-07-16 | ||
| JP2001216018 | 2001-07-16 | ||
| JP2001299620 | 2001-09-28 | ||
| JP2001-299620 | 2001-09-28 | ||
| JP2002207536A JP4027740B2 (ja) | 2001-07-16 | 2002-07-16 | 半導体装置の作製方法 |
Related Child Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002279547A Division JP4567282B2 (ja) | 2001-07-16 | 2002-09-25 | 発光装置の作製方法 |
| JP2006037358A Division JP4527068B2 (ja) | 2001-07-16 | 2006-02-15 | 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2003174153A JP2003174153A (ja) | 2003-06-20 |
| JP2003174153A5 JP2003174153A5 (enrdf_load_stackoverflow) | 2006-03-30 |
| JP4027740B2 true JP4027740B2 (ja) | 2007-12-26 |
Family
ID=27347165
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2002207536A Expired - Fee Related JP4027740B2 (ja) | 2001-07-16 | 2002-07-16 | 半導体装置の作製方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP4027740B2 (enrdf_load_stackoverflow) |
Families Citing this family (185)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7973313B2 (en) * | 2003-02-24 | 2011-07-05 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit device, IC label, container comprising the thin film integrated circuit, manufacturing method of the thin film integrated circuit device, manufacturing method of the container, and management method of product having the container |
| JP4163567B2 (ja) * | 2003-07-09 | 2008-10-08 | 株式会社 日立ディスプレイズ | 発光型表示装置 |
| US7253391B2 (en) | 2003-09-19 | 2007-08-07 | Semiconductor Energy Laboratory Co., Ltd. | Optical sensor device and electronic apparatus |
| CN100477240C (zh) | 2003-10-06 | 2009-04-08 | 株式会社半导体能源研究所 | 半导体器件以及制造该器件的方法 |
| US7229900B2 (en) | 2003-10-28 | 2007-06-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, method of manufacturing thereof, and method of manufacturing base material |
| JP4809600B2 (ja) * | 2003-10-28 | 2011-11-09 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7241666B2 (en) * | 2003-10-28 | 2007-07-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| JP4939742B2 (ja) * | 2003-10-28 | 2012-05-30 | 株式会社半導体エネルギー研究所 | 光学フィルムの作製方法 |
| US8048251B2 (en) | 2003-10-28 | 2011-11-01 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing optical film |
| US6967149B2 (en) * | 2003-11-20 | 2005-11-22 | Hewlett-Packard Development Company, L.P. | Storage structure with cleaved layer |
| JP4689249B2 (ja) * | 2003-11-28 | 2011-05-25 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| CN100583193C (zh) | 2003-11-28 | 2010-01-20 | 株式会社半导体能源研究所 | 制造显示设备的方法 |
| JP4836445B2 (ja) * | 2003-12-12 | 2011-12-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2005183615A (ja) * | 2003-12-18 | 2005-07-07 | Ricoh Co Ltd | 薄膜デバイス装置の製造方法及び薄膜デバイス装置 |
| TWI513489B (zh) | 2004-02-26 | 2015-12-21 | Semiconductor Energy Lab | 半導體裝置 |
| JP4583797B2 (ja) * | 2004-04-14 | 2010-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7288480B2 (en) | 2004-04-23 | 2007-10-30 | Semiconductor Energy Laboratory Co., Ltd. | Thin film integrated circuit and method for manufacturing the same, CPU, memory, electronic card and electronic device |
| CN100565794C (zh) * | 2004-09-24 | 2009-12-02 | 株式会社半导体能源研究所 | 半导体器件及其制造方法 |
| JP4817636B2 (ja) | 2004-10-04 | 2011-11-16 | 株式会社半導体エネルギー研究所 | 半導体装置およびその作製方法 |
| JP5072210B2 (ja) * | 2004-10-05 | 2012-11-14 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US7858451B2 (en) | 2005-02-03 | 2010-12-28 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device, semiconductor device and manufacturing method thereof |
| US9040420B2 (en) | 2005-03-01 | 2015-05-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of semiconductor device including peeling layers from substrates by etching |
| JP4846265B2 (ja) * | 2005-05-13 | 2011-12-28 | 共同印刷株式会社 | 表示装置用素子基板及びその製造方法 |
| JP5057700B2 (ja) * | 2005-05-31 | 2012-10-24 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| EP1760798B1 (en) | 2005-08-31 | 2012-01-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1760776B1 (en) * | 2005-08-31 | 2019-12-25 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method for semiconductor device with flexible substrate |
| US8900970B2 (en) | 2006-04-28 | 2014-12-02 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device using a flexible substrate |
| TWI570900B (zh) * | 2006-09-29 | 2017-02-11 | 半導體能源研究所股份有限公司 | 半導體裝置的製造方法 |
| US8137417B2 (en) | 2006-09-29 | 2012-03-20 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus and manufacturing apparatus of semiconductor device |
| CN101529596B (zh) | 2006-11-29 | 2011-12-14 | 株式会社半导体能源研究所 | 装置及其制造方法 |
| US7968382B2 (en) | 2007-02-02 | 2011-06-28 | Semiconductor Energy Laboratory Co., Ltd. | Method of manufacturing semiconductor device |
| EP1970952A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1970951A3 (en) | 2007-03-13 | 2009-05-06 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP1976001A3 (en) | 2007-03-26 | 2012-08-22 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| US7897482B2 (en) | 2007-05-31 | 2011-03-01 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| EP2001047A1 (en) | 2007-06-07 | 2008-12-10 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
| JP5388500B2 (ja) | 2007-08-30 | 2014-01-15 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2009087928A (ja) | 2007-09-13 | 2009-04-23 | Semiconductor Energy Lab Co Ltd | 半導体装置およびその作製方法 |
| JP5367330B2 (ja) * | 2007-09-14 | 2013-12-11 | 株式会社半導体エネルギー研究所 | Ｓｏｉ基板の作製方法及び半導体装置の作製方法 |
| JP5366517B2 (ja) * | 2007-12-03 | 2013-12-11 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| JP2009205669A (ja) | 2008-01-31 | 2009-09-10 | Semiconductor Energy Lab Co Ltd | 半導体装置 |
| KR101563138B1 (ko) * | 2008-04-25 | 2015-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치 제조 방법 |
| KR101582503B1 (ko) | 2008-05-12 | 2016-01-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2009142310A1 (en) | 2008-05-23 | 2009-11-26 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| EP2297778A1 (en) | 2008-05-23 | 2011-03-23 | Semiconductor Energy Laboratory Co, Ltd. | Semiconductor device |
| JP5248412B2 (ja) | 2008-06-06 | 2013-07-31 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US8053253B2 (en) | 2008-06-06 | 2011-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing semiconductor device |
| KR102383642B1 (ko) | 2008-07-10 | 2022-04-08 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광장치 및 전자기기 |
| TWI475282B (zh) | 2008-07-10 | 2015-03-01 | Semiconductor Energy Lab | 液晶顯示裝置和其製造方法 |
| KR101753574B1 (ko) | 2008-07-10 | 2017-07-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
| JP5216716B2 (ja) | 2008-08-20 | 2013-06-19 | 株式会社半導体エネルギー研究所 | 発光装置及びその作製方法 |
| WO2010032611A1 (en) | 2008-09-19 | 2010-03-25 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing the same |
| KR101611643B1 (ko) | 2008-10-01 | 2016-04-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| JP2011003522A (ja) * | 2008-10-16 | 2011-01-06 | Semiconductor Energy Lab Co Ltd | フレキシブル発光装置、電子機器及びフレキシブル発光装置の作製方法 |
| JP5586920B2 (ja) | 2008-11-20 | 2014-09-10 | 株式会社半導体エネルギー研究所 | フレキシブル半導体装置の作製方法 |
| EP2375466A4 (en) | 2009-01-07 | 2012-10-17 | Sharp Kk | ORGANIC ELECTROLUMINESCENT SCREEN AND METHOD FOR PRODUCING SAME |
| TWI607670B (zh) | 2009-01-08 | 2017-12-01 | 半導體能源研究所股份有限公司 | 發光裝置及電子裝置 |
| JP2010245031A (ja) | 2009-03-20 | 2010-10-28 | Semiconductor Energy Lab Co Ltd | 蓄電デバイス及びその作製方法 |
| US8766269B2 (en) * | 2009-07-02 | 2014-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, lighting device, and electronic device |
| JP5616671B2 (ja) * | 2010-04-07 | 2014-10-29 | 協立化学産業株式会社 | 接着剤層を有する多層板状部材の分離方法及び分離装置 |
| US8507322B2 (en) | 2010-06-24 | 2013-08-13 | Akihiro Chida | Semiconductor substrate and method for manufacturing semiconductor device |
| KR101845480B1 (ko) | 2010-06-25 | 2018-04-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치의 제작 방법 |
| JP5902406B2 (ja) | 2010-06-25 | 2016-04-13 | 株式会社半導体エネルギー研究所 | 分離方法および半導体装置の作製方法 |
| JP5416724B2 (ja) * | 2011-01-26 | 2014-02-12 | 積水化学工業株式会社 | 複合体、複合体の製造方法及び多層ビルドアップ配線基板の製造方法 |
| JP2012186158A (ja) | 2011-02-14 | 2012-09-27 | Semiconductor Energy Lab Co Ltd | 照明装置及び発光装置の作製方法及び製造装置 |
| KR102109009B1 (ko) | 2011-02-25 | 2020-05-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 사용한 전자 기기 |
| KR102040242B1 (ko) | 2011-05-12 | 2019-11-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치를 이용한 전자 기기 |
| US9093397B2 (en) | 2011-07-06 | 2015-07-28 | Panasonic Corporation | Flexible device manufacturing method and flexible device |
| RU2469433C1 (ru) * | 2011-07-13 | 2012-12-10 | Юрий Георгиевич Шретер | Способ лазерного отделения эпитаксиальной пленки или слоя эпитаксиальной пленки от ростовой подложки эпитаксиальной полупроводниковой структуры (варианты) |
| JP6114063B2 (ja) * | 2012-02-29 | 2017-04-12 | 京セラ株式会社 | 複合基板 |
| JP2013251255A (ja) * | 2012-05-04 | 2013-12-12 | Semiconductor Energy Lab Co Ltd | 発光装置の作製方法 |
| KR102079188B1 (ko) | 2012-05-09 | 2020-02-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 기기 |
| KR101989940B1 (ko) | 2012-05-11 | 2019-06-17 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 발광 장치의 제작 방법 |
| JP6580808B2 (ja) * | 2012-06-19 | 2019-09-25 | 日鉄ケミカル＆マテリアル株式会社 | 表示装置及びその製造方法 |
| KR102198316B1 (ko) * | 2012-06-19 | 2021-01-04 | 닛테츠 케미컬 앤드 머티리얼 가부시키가이샤 | 표시장치 및 그 제조방법, 그리고 표시장치 지지기재용 폴리이미드 필름 및 그 제조방법 |
| TWI669835B (zh) | 2012-07-05 | 2019-08-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
| JP5685567B2 (ja) * | 2012-09-28 | 2015-03-18 | 株式会社東芝 | 表示装置の製造方法 |
| KR20150120376A (ko) | 2013-02-20 | 2015-10-27 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법, 반도체 장치, 및 박리 장치 |
| JP6490901B2 (ja) | 2013-03-14 | 2019-03-27 | 株式会社半導体エネルギー研究所 | 発光装置の作製方法 |
| TWI692108B (zh) | 2013-04-10 | 2020-04-21 | 日商半導體能源研究所股份有限公司 | 半導體裝置及其製造方法 |
| KR102479472B1 (ko) | 2013-04-15 | 2022-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| KR102405992B1 (ko) | 2013-04-24 | 2022-06-10 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| JP5454727B1 (ja) * | 2013-07-10 | 2014-03-26 | 日新電機株式会社 | 薄膜トランジスタの作製方法 |
| WO2015005230A1 (en) | 2013-07-12 | 2015-01-15 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| US9818763B2 (en) | 2013-07-12 | 2017-11-14 | Semiconductor Energy Laboratory Co., Ltd. | Display device and method for manufacturing display device |
| KR102670296B1 (ko) | 2013-07-16 | 2024-05-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
| TWI630595B (zh) | 2013-07-19 | 2018-07-21 | 半導體能源研究所股份有限公司 | 資料處理裝置 |
| WO2015008680A1 (en) | 2013-07-19 | 2015-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Data processing device |
| US9395070B2 (en) | 2013-07-19 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Support of flexible component and light-emitting device |
| US9356049B2 (en) | 2013-07-26 | 2016-05-31 | Semiconductor Energy Laboratory Co., Ltd. | Display device with a transistor on an outer side of a bent portion |
| US9269914B2 (en) | 2013-08-01 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, electronic device, and lighting device |
| KR102224416B1 (ko) | 2013-08-06 | 2021-03-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 박리 방법 |
| WO2015029806A1 (en) | 2013-08-30 | 2015-03-05 | Semiconductor Energy Laboratory Co., Ltd. | Processing apparatus and processing method of stack |
| KR102288238B1 (ko) | 2013-09-03 | 2021-08-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 |
| US9925749B2 (en) | 2013-09-06 | 2018-03-27 | Semiconductor Energy Laboratory Co., Ltd. | Bonding apparatus and stack body manufacturing apparatus |
| TWI663722B (zh) | 2013-09-06 | 2019-06-21 | Semiconductor Energy Laboratory Co., Ltd. | 發光裝置以及發光裝置的製造方法 |
| US9981457B2 (en) | 2013-09-18 | 2018-05-29 | Semiconductor Emergy Laboratory Co., Ltd. | Manufacturing apparatus of stack |
| US9269915B2 (en) * | 2013-09-18 | 2016-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Display device |
| US9937698B2 (en) | 2013-11-06 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and light-emitting device |
| KR102712985B1 (ko) | 2013-11-15 | 2024-10-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| US9430180B2 (en) | 2013-11-15 | 2016-08-30 | Semiconductor Energy Laboratory Co., Ltd | Display panel and electronic device |
| KR102239367B1 (ko) | 2013-11-27 | 2021-04-09 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
| KR102317295B1 (ko) | 2013-11-28 | 2021-10-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 및 그 구동 방법 |
| JP2015129917A (ja) | 2013-12-02 | 2015-07-16 | 株式会社半導体エネルギー研究所 | 情報処理装置 |
| CN110134271A (zh) | 2013-12-02 | 2019-08-16 | 株式会社半导体能源研究所 | 电子装置 |
| KR102516162B1 (ko) * | 2013-12-02 | 2023-03-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 제조방법 |
| TWI732735B (zh) | 2013-12-03 | 2021-07-11 | 日商半導體能源研究所股份有限公司 | 剝離裝置以及疊層體製造裝置 |
| JP6496666B2 (ja) | 2013-12-03 | 2019-04-03 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2015087192A1 (en) | 2013-12-12 | 2015-06-18 | Semiconductor Energy Laboratory Co., Ltd. | Peeling method and peeling apparatus |
| US9397149B2 (en) | 2013-12-27 | 2016-07-19 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device |
| CN105981193B (zh) | 2014-02-11 | 2018-08-24 | 株式会社半导体能源研究所 | 显示设备及电子设备 |
| KR102358935B1 (ko) | 2014-02-12 | 2022-02-04 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 전자 기기 |
| TWI654736B (zh) | 2014-02-14 | 2019-03-21 | 日商半導體能源研究所股份有限公司 | 發光裝置 |
| KR102334815B1 (ko) | 2014-02-19 | 2021-12-02 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 박리 방법 |
| TWI696023B (zh) | 2014-02-28 | 2020-06-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置的製造方法及電子裝置的製造方法 |
| US9588549B2 (en) | 2014-02-28 | 2017-03-07 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US9899626B2 (en) * | 2014-03-06 | 2018-02-20 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device |
| WO2015132694A1 (en) | 2014-03-07 | 2015-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, and manufacturing method of touch panel |
| US10228729B2 (en) | 2014-03-12 | 2019-03-12 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| TWI679560B (zh) | 2014-03-13 | 2019-12-11 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| KR102292148B1 (ko) | 2014-03-13 | 2021-08-24 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치의 제작 방법, 및 전자 기기의 제작 방법 |
| JP2015187852A (ja) | 2014-03-13 | 2015-10-29 | 株式会社半導体エネルギー研究所 | タッチパネル |
| JP6548425B2 (ja) | 2014-03-31 | 2019-07-24 | 日鉄ケミカル＆マテリアル株式会社 | フレキシブルデバイスの製造方法及びフレキシブルデバイス並びにフレキシブルデバイス製造装置 |
| KR102511325B1 (ko) | 2014-04-18 | 2023-03-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 그 동작 방법 |
| JP6468686B2 (ja) | 2014-04-25 | 2019-02-13 | 株式会社半導体エネルギー研究所 | 入出力装置 |
| TWI832717B (zh) | 2014-04-25 | 2024-02-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| JP6526947B2 (ja) * | 2014-04-30 | 2019-06-05 | 株式会社半導体エネルギー研究所 | 拭き取り装置および積層体の作製装置 |
| US10073571B2 (en) | 2014-05-02 | 2018-09-11 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor and touch panel including capacitor |
| US10656799B2 (en) | 2014-05-02 | 2020-05-19 | Semiconductor Energy Laboratory Co., Ltd. | Display device and operation method thereof |
| JP6596224B2 (ja) | 2014-05-02 | 2019-10-23 | 株式会社半導体エネルギー研究所 | 発光装置及び入出力装置 |
| JP2015228367A (ja) | 2014-05-02 | 2015-12-17 | 株式会社半導体エネルギー研究所 | 半導体装置、入出力装置、及び電子機器 |
| JP6548871B2 (ja) | 2014-05-03 | 2019-07-24 | 株式会社半導体エネルギー研究所 | 積層体の基板剥離装置 |
| JP6722980B2 (ja) | 2014-05-09 | 2020-07-15 | 株式会社半導体エネルギー研究所 | 表示装置および発光装置、並びに電子機器 |
| US10586954B2 (en) | 2014-05-23 | 2020-03-10 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device including secondary battery |
| JP2016006640A (ja) | 2014-05-30 | 2016-01-14 | 株式会社半導体エネルギー研究所 | 検知器、入力装置、入出力装置 |
| US10372163B2 (en) | 2014-05-30 | 2019-08-06 | Semiconductor Energy Laboratory Co., Ltd. | Input device comprising sensor panel, information processing device comprising input device |
| JP6727762B2 (ja) | 2014-05-30 | 2020-07-22 | 株式会社半導体エネルギー研究所 | 発光装置及び電子機器 |
| TWI765679B (zh) | 2014-05-30 | 2022-05-21 | 日商半導體能源研究所股份有限公司 | 觸控面板 |
| US9455281B2 (en) | 2014-06-19 | 2016-09-27 | Semiconductor Energy Laboratory Co., Ltd. | Touch sensor, touch panel, touch panel module, and display device |
| US9676175B2 (en) | 2014-06-20 | 2017-06-13 | Semiconductor Energy Laboratory Co., Ltd. | Peeling apparatus |
| TWI755773B (zh) | 2014-06-30 | 2022-02-21 | 日商半導體能源研究所股份有限公司 | 發光裝置，模組，及電子裝置 |
| JP6751385B2 (ja) * | 2014-07-08 | 2020-09-02 | マサチューセッツ インスティテュート オブ テクノロジー | 基板の製造方法 |
| JP2016029464A (ja) | 2014-07-18 | 2016-03-03 | 株式会社半導体エネルギー研究所 | 表示装置 |
| JP6636736B2 (ja) | 2014-07-18 | 2020-01-29 | 株式会社半導体エネルギー研究所 | 回路基板の作製方法、発光装置の作製方法、電子機器の作製方法、及び発光装置 |
| CN106537485B (zh) | 2014-07-25 | 2019-07-16 | 株式会社半导体能源研究所 | 显示装置及电子设备 |
| US9799829B2 (en) * | 2014-07-25 | 2017-10-24 | Semiconductor Energy Laboratory Co., Ltd. | Separation method, light-emitting device, module, and electronic device |
| JP6506648B2 (ja) | 2014-07-31 | 2019-04-24 | 株式会社半導体エネルギー研究所 | 表示装置 |
| KR102533396B1 (ko) | 2014-07-31 | 2023-05-26 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 장치 |
| JP6586090B2 (ja) | 2014-08-07 | 2019-10-02 | 株式会社半導体エネルギー研究所 | 運転支援システム |
| JP6602585B2 (ja) | 2014-08-08 | 2019-11-06 | 株式会社半導体エネルギー研究所 | 表示装置および電子機器 |
| US9843017B2 (en) | 2014-08-22 | 2017-12-12 | Semiconductor Energy Laboratory Co., Ltd. | Display device, manufacturing method thereof, and electronic device |
| JP2016057617A (ja) | 2014-09-05 | 2016-04-21 | 株式会社半導体エネルギー研究所 | 電子機器 |
| JP2016110075A (ja) | 2014-10-03 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 発光装置、モジュール、及び電子機器 |
| KR102445185B1 (ko) | 2014-10-08 | 2022-09-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 |
| WO2016059497A1 (en) | 2014-10-17 | 2016-04-21 | Semiconductor Energy Laboratory Co., Ltd. | Light-emitting device, module, electronic device, and method for manufacturing light-emitting device |
| KR102500994B1 (ko) | 2014-10-17 | 2023-02-16 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 터치 패널 |
| KR20170075006A (ko) | 2014-10-28 | 2017-06-30 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 발광 장치 및 전자 장치 |
| JP2016095502A (ja) | 2014-11-11 | 2016-05-26 | 株式会社半導体エネルギー研究所 | 表示システム、表示装置 |
| CN112002242B (zh) | 2014-11-28 | 2023-04-25 | 株式会社半导体能源研究所 | 图像处理装置、显示系统以及电子设备 |
| US10185363B2 (en) | 2014-11-28 | 2019-01-22 | Semiconductor Energy Laboratory Co., Ltd. | Electronic device |
| US9933872B2 (en) | 2014-12-01 | 2018-04-03 | Semiconductor Energy Laboratory Co., Ltd. | Touch panel |
| US9368750B1 (en) | 2014-12-04 | 2016-06-14 | Panasonic Intellectual Property Management Co., Ltd. | Method for fabricating intermediate member of electronic element and method for fabricating electronic element |
| JP2016208020A (ja) | 2015-04-22 | 2016-12-08 | 株式会社半導体エネルギー研究所 | 回路基板の作製方法、発光装置の作製方法、及び発光装置 |
| JP6815096B2 (ja) | 2015-05-27 | 2021-01-20 | 株式会社半導体エネルギー研究所 | 剥離装置 |
| JP6761276B2 (ja) | 2015-05-28 | 2020-09-23 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法、および電子機器の作製方法 |
| JP6577060B2 (ja) * | 2015-06-09 | 2019-09-18 | ロヨル コーポレーション | 可撓性電子機器の製造装置 |
| JP6764704B2 (ja) | 2015-07-29 | 2020-10-07 | 株式会社半導体エネルギー研究所 | 表示装置の作製方法 |
| US9941475B2 (en) | 2015-07-29 | 2018-04-10 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing display device and method for manufacturing electronic device |
| WO2017017553A1 (en) | 2015-07-30 | 2017-02-02 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of light-emitting device, light-emitting device, module, and electronic device |
| DE112016004055B4 (de) | 2015-09-08 | 2024-02-08 | Semiconductor Energy Laboratory Co., Ltd. | Anzeigevorrichtungen und elektronisches gerät |
| US10424632B2 (en) | 2015-11-30 | 2019-09-24 | Semiconductor Energy Laboratory Co., Ltd. | Display device and electronic device |
| US10259207B2 (en) | 2016-01-26 | 2019-04-16 | Semiconductor Energy Laboratory Co., Ltd. | Method for forming separation starting point and separation method |
| US10522574B2 (en) | 2016-05-16 | 2019-12-31 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of display device and manufacturing method of electronic device |
| TWI722048B (zh) | 2016-06-10 | 2021-03-21 | 日商半導體能源研究所股份有限公司 | 顯示裝置及電子裝置 |
| TWI724063B (zh) | 2016-06-24 | 2021-04-11 | 日商半導體能源研究所股份有限公司 | 顯示裝置、輸入輸出裝置、半導體裝置 |
| US10141544B2 (en) | 2016-08-10 | 2018-11-27 | Semiconductor Energy Laboratory Co., Ltd. | Electroluminescent display device and manufacturing method thereof |
| JP6801297B2 (ja) * | 2016-08-26 | 2020-12-16 | 大日本印刷株式会社 | 配線基板及び表示装置 |
| KR102554691B1 (ko) * | 2016-10-07 | 2023-07-11 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 유리 기판의 세정 방법, 반도체 장치의 제작 방법, 및 유리 기판 |
| KR102440571B1 (ko) | 2016-12-22 | 2022-09-05 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 표시 장치 및 전자 기기 |
| JP6345903B1 (ja) * | 2017-09-13 | 2018-06-20 | 堺ディスプレイプロダクト株式会社 | フレキシブルディスプレイの製造装置 |
| CN107799640B (zh) * | 2017-11-02 | 2023-12-29 | 江苏穿越光电科技有限公司 | 一种高光效P型非极性AlN薄膜及其制备方法 |
| WO2019106846A1 (ja) | 2017-12-01 | 2019-06-06 | 日立化成株式会社 | 半導体装置の製造方法、仮固定材用樹脂組成物、及び仮固定材用積層フィルム |
| WO2021005796A1 (ja) * | 2019-07-11 | 2021-01-14 | 堺ディスプレイプロダクト株式会社 | フレキシブル発光デバイス、その製造方法及び支持基板 |
| WO2021005798A1 (ja) * | 2019-07-11 | 2021-01-14 | 堺ディスプレイプロダクト株式会社 | フレキシブル発光デバイスの製造方法及び支持基板 |
| WO2024142947A1 (ja) * | 2022-12-26 | 2024-07-04 | 東京エレクトロン株式会社 | 重合基板、基板処理方法及び基板処理システム |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH07142570A (ja) * | 1993-11-12 | 1995-06-02 | Ube Ind Ltd | 複合半導体基板及びその製造方法 |
| JP4619462B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜素子の転写方法 |
| JP3809681B2 (ja) * | 1996-08-27 | 2006-08-16 | セイコーエプソン株式会社 | 剥離方法 |
| JP4619461B2 (ja) * | 1996-08-27 | 2011-01-26 | セイコーエプソン株式会社 | 薄膜デバイスの転写方法、及びデバイスの製造方法 |
| WO1998021750A1 (fr) * | 1996-11-11 | 1998-05-22 | Catalysts & Chemicals Industries Co., Ltd. | Procede d'aplanissement d'un substrat, et procede de fabrication de substrats recouverts d'un film et de dispositifs a semi-conducteur |
| JPH1187799A (ja) * | 1997-09-12 | 1999-03-30 | Matsushita Electric Ind Co Ltd | 磁気抵抗素子とその製造方法 |
| JPH11135882A (ja) * | 1997-10-28 | 1999-05-21 | Sharp Corp | 化合物半導体基板、及び化合物半導体基板の製造方法、並びに発光素子 |
| JP2001166301A (ja) * | 1999-12-06 | 2001-06-22 | Seiko Epson Corp | バックライト内蔵型液晶表示装置及びその製造方法 |
| JP4478268B2 (ja) * | 1999-12-28 | 2010-06-09 | セイコーエプソン株式会社 | 薄膜デバイスの製造方法 |
-
2002
- 2002-07-16 JP JP2002207536A patent/JP4027740B2/ja not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003174153A (ja) | 2003-06-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP6430456B2 (ja) | 半導体装置の作製方法 | |
| JP4027740B2 (ja) | 半導体装置の作製方法 | |
| JP6827632B2 (ja) | 発光表示装置の作製方法 | |
| JP4472238B2 (ja) | 剥離方法および半導体装置の作製方法 | |
| JP4527068B2 (ja) | 剥離方法、半導体装置の作製方法、及び電子書籍の作製方法 | |
| JP4567282B2 (ja) | 発光装置の作製方法 | |
| JP4267394B2 (ja) | 剥離方法、及び半導体装置の作製方法 | |
| JP4602261B2 (ja) | 剥離方法および半導体装置の作製方法 | |
| KR100975802B1 (ko) | 발광 장치 및 발광 장치를 형성하는 방법 | |
| JP2005033219A (ja) | 半導体装置の作製方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20060215 |
|
| A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20060331 |
|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20061205 |
|
| RD02 | Notification of acceptance of power of attorney |
Free format text: JAPANESE INTERMEDIATE CODE: A7422 Effective date: 20061214 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070202 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20070605 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070727 |
|
| A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070827 |
|
| A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20070831 |
|
| TRDD | Decision of grant or rejection written | ||
| A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20071002 |
|
| A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20071010 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101019 Year of fee payment: 3 |
|
| R150 | Certificate of patent or registration of utility model |
Ref document number: 4027740 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101019 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20101019 Year of fee payment: 3 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111019 Year of fee payment: 4 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20111019 Year of fee payment: 4 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121019 Year of fee payment: 5 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20121019 Year of fee payment: 5 |
|
| FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20131019 Year of fee payment: 6 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
| LAPS | Cancellation because of no payment of annual fees |