JP3894104B2 - 現像方法及び現像装置及び現像液再生装置 - Google Patents

現像方法及び現像装置及び現像液再生装置 Download PDF

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Publication number
JP3894104B2
JP3894104B2 JP2002332578A JP2002332578A JP3894104B2 JP 3894104 B2 JP3894104 B2 JP 3894104B2 JP 2002332578 A JP2002332578 A JP 2002332578A JP 2002332578 A JP2002332578 A JP 2002332578A JP 3894104 B2 JP3894104 B2 JP 3894104B2
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JP
Japan
Prior art keywords
developer
unit
concentration
substrate
resist
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
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JP2002332578A
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English (en)
Japanese (ja)
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JP2004170451A (ja
JP2004170451A5 (enExample
Inventor
清久 立山
雅文 野村
武虎 篠木
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to JP2002332578A priority Critical patent/JP3894104B2/ja
Priority to KR1020030080297A priority patent/KR101035465B1/ko
Priority to US10/706,091 priority patent/US6969572B2/en
Priority to TW092131831A priority patent/TWI284922B/zh
Priority to CNB2003101233299A priority patent/CN1311303C/zh
Publication of JP2004170451A publication Critical patent/JP2004170451A/ja
Publication of JP2004170451A5 publication Critical patent/JP2004170451A5/ja
Priority to US11/229,534 priority patent/US7101646B2/en
Priority to US11/476,574 priority patent/US7182531B2/en
Application granted granted Critical
Publication of JP3894104B2 publication Critical patent/JP3894104B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
    • G03D3/00—Liquid processing apparatus involving immersion; Washing apparatus involving immersion
    • G03D3/02—Details of liquid circulation
    • G03D3/06—Liquid supply; Liquid circulation outside tanks
    • G03D3/065—Liquid supply; Liquid circulation outside tanks replenishment or recovery apparatus
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03D—APPARATUS FOR PROCESSING EXPOSED PHOTOGRAPHIC MATERIALS; ACCESSORIES THEREFOR
    • G03D3/00—Liquid processing apparatus involving immersion; Washing apparatus involving immersion
    • G03D3/02—Details of liquid circulation
    • G03D3/06—Liquid supply; Liquid circulation outside tanks
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/30—Imagewise removal using liquid means
    • G03F7/3042—Imagewise removal using liquid means from printing plates transported horizontally through the processing stations
    • G03F7/3071—Process control means, e.g. for replenishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2002332578A 2002-11-15 2002-11-15 現像方法及び現像装置及び現像液再生装置 Expired - Fee Related JP3894104B2 (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP2002332578A JP3894104B2 (ja) 2002-11-15 2002-11-15 現像方法及び現像装置及び現像液再生装置
US10/706,091 US6969572B2 (en) 2002-11-15 2003-11-13 Developing method and apparatus
TW092131831A TWI284922B (en) 2002-11-15 2003-11-13 Developing method and apparatus
KR1020030080297A KR101035465B1 (ko) 2002-11-15 2003-11-13 현상방법 및 현상장치
CNB2003101233299A CN1311303C (zh) 2002-11-15 2003-11-15 显影方法及显影装置
US11/229,534 US7101646B2 (en) 2002-11-15 2005-09-20 Developing method and apparatus
US11/476,574 US7182531B2 (en) 2002-11-15 2006-06-29 Developing method and apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2002332578A JP3894104B2 (ja) 2002-11-15 2002-11-15 現像方法及び現像装置及び現像液再生装置

Publications (3)

Publication Number Publication Date
JP2004170451A JP2004170451A (ja) 2004-06-17
JP2004170451A5 JP2004170451A5 (enExample) 2005-06-16
JP3894104B2 true JP3894104B2 (ja) 2007-03-14

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Family Applications (1)

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JP2002332578A Expired - Fee Related JP3894104B2 (ja) 2002-11-15 2002-11-15 現像方法及び現像装置及び現像液再生装置

Country Status (5)

Country Link
US (3) US6969572B2 (enExample)
JP (1) JP3894104B2 (enExample)
KR (1) KR101035465B1 (enExample)
CN (1) CN1311303C (enExample)
TW (1) TWI284922B (enExample)

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JP3894104B2 (ja) * 2002-11-15 2007-03-14 東京エレクトロン株式会社 現像方法及び現像装置及び現像液再生装置
JP2005136364A (ja) * 2003-10-08 2005-05-26 Zao Nikon Co Ltd 基板搬送装置、露光装置、並びにデバイス製造方法
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JP2006278765A (ja) * 2005-03-29 2006-10-12 Fujitsu Ltd 貼合せ基板製造装置の洗浄方法、貼合せ基板製造装置の洗浄用治具及び貼合せ基板製造装置の洗浄装置
JP2006344310A (ja) * 2005-06-09 2006-12-21 Sony Corp 現像方法および現像装置
US7766566B2 (en) * 2005-08-03 2010-08-03 Tokyo Electron Limited Developing treatment apparatus and developing treatment method
CN100471541C (zh) * 2005-09-30 2009-03-25 日本瑞环株式会社 溶剂的回收装置及溶剂的回收方法
CN100555084C (zh) * 2005-11-21 2009-10-28 友达光电股份有限公司 显影液成分调整方法及其显影系统
JP4839820B2 (ja) * 2005-12-19 2011-12-21 三菱化学エンジニアリング株式会社 現像液の供給装置
KR100734659B1 (ko) * 2005-12-28 2007-07-02 동부일렉트로닉스 주식회사 현상 공정 제어 장치 및 방법
US8448804B2 (en) * 2006-10-04 2013-05-28 Ropak Corporation Pivoting cover with a fastening device
CN103852978B (zh) * 2006-11-30 2019-03-22 三菱化学工程株式会社 显影液的浓度调节方法、调制装置和显影液
JP2009099721A (ja) * 2007-10-16 2009-05-07 Dainippon Screen Mfg Co Ltd 基板冷却方法および基板冷却装置
TWI413156B (zh) * 2008-01-28 2013-10-21 Tokyo Ohka Kogyo Co Ltd 光阻液供給回收系統及光阻液回收方法
CN101634816B (zh) * 2008-07-24 2012-05-30 北京京东方光电科技有限公司 显影液控制系统
US7854558B2 (en) * 2009-02-16 2010-12-21 Eastman Kodak Company Developer waste reuse
CN102830595B (zh) * 2012-08-24 2014-08-13 京东方科技集团股份有限公司 一种显影液监控方法及设备
CN103887151B (zh) * 2014-03-07 2017-02-01 京东方科技集团股份有限公司 一种构图装置和构图方法
CN109791374B (zh) * 2017-08-23 2022-05-17 深圳市柔宇科技股份有限公司 显影液回收系统
US11061333B2 (en) * 2017-11-13 2021-07-13 Taiwan Semiconductor Manufacturing Company, Ltd. Manufacturing method of semiconductor device and semiconductor processing system
TWI668528B (zh) * 2017-11-20 2019-08-11 台灣積體電路製造股份有限公司 顯影液過濾系統及顯影液的過濾方法
CN109806658B (zh) * 2017-11-20 2021-10-12 台湾积体电路制造股份有限公司 显影液过滤系统及显影液的过滤方法
JP7060415B2 (ja) * 2018-03-12 2022-04-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
CN109802643B (zh) * 2018-11-30 2020-09-08 无锡市好达电子股份有限公司 一种辅助显影版图制作方法
JP7731730B2 (ja) * 2021-08-18 2025-09-01 旭化成株式会社 データ処理装置、現像装置、データ処理方法、および、データ処理プログラム
JP7738447B2 (ja) * 2021-10-08 2025-09-12 東京エレクトロン株式会社 分析装置
JP7369227B2 (ja) * 2022-03-22 2023-10-25 株式会社Ｓｃｒｅｅｎホールディングス 現像装置

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Also Published As

Publication number Publication date
US20060024622A1 (en) 2006-02-02
KR20040042875A (ko) 2004-05-20
TWI284922B (en) 2007-08-01
US20040096760A1 (en) 2004-05-20
US7182531B2 (en) 2007-02-27
US20060246384A1 (en) 2006-11-02
KR101035465B1 (ko) 2011-05-18
CN1501177A (zh) 2004-06-02
JP2004170451A (ja) 2004-06-17
US7101646B2 (en) 2006-09-05
US6969572B2 (en) 2005-11-29
CN1311303C (zh) 2007-04-18
TW200415705A (en) 2004-08-16

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