JP3866460B2 - 不揮発性半導体記憶装置 - Google Patents

不揮発性半導体記憶装置 Download PDF

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Publication number
JP3866460B2
JP3866460B2 JP26617699A JP26617699A JP3866460B2 JP 3866460 B2 JP3866460 B2 JP 3866460B2 JP 26617699 A JP26617699 A JP 26617699A JP 26617699 A JP26617699 A JP 26617699A JP 3866460 B2 JP3866460 B2 JP 3866460B2
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Japan
Prior art keywords
memory cell
block
nand
signal line
data
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Expired - Lifetime
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JP26617699A
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Japanese (ja)
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JP2000222895A5 (enExample
JP2000222895A (ja
Inventor
井 康 司 作
村 寛 中
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Toshiba Corp
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Toshiba Corp
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Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP26617699A priority Critical patent/JP3866460B2/ja
Priority to US09/449,932 priority patent/US6295227B1/en
Priority to KR10-1999-0052598A priority patent/KR100488380B1/ko
Priority to TW088120608A priority patent/TW471155B/zh
Publication of JP2000222895A publication Critical patent/JP2000222895A/ja
Publication of JP2000222895A5 publication Critical patent/JP2000222895A5/ja
Application granted granted Critical
Publication of JP3866460B2 publication Critical patent/JP3866460B2/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/14—Circuits for erasing electrically, e.g. erase voltage switching circuits
    • G11C16/16—Circuits for erasing electrically, e.g. erase voltage switching circuits for erasing blocks, e.g. arrays, words, groups
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C8/00—Arrangements for selecting an address in a digital store
    • G11C8/14—Word line organisation; Word line lay-out

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP26617699A 1998-11-26 1999-09-20 不揮発性半導体記憶装置 Expired - Lifetime JP3866460B2 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP26617699A JP3866460B2 (ja) 1998-11-26 1999-09-20 不揮発性半導体記憶装置
US09/449,932 US6295227B1 (en) 1998-11-26 1999-11-24 Non-volatile semiconductor memory device
KR10-1999-0052598A KR100488380B1 (ko) 1998-11-26 1999-11-25 불휘발성 반도체 기억 장치
TW088120608A TW471155B (en) 1998-11-26 1999-11-25 Non-volatile semiconductor memory device

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP10-336162 1998-11-26
JP33616298 1998-11-26
JP26617699A JP3866460B2 (ja) 1998-11-26 1999-09-20 不揮発性半導体記憶装置

Publications (3)

Publication Number Publication Date
JP2000222895A JP2000222895A (ja) 2000-08-11
JP2000222895A5 JP2000222895A5 (enExample) 2004-09-02
JP3866460B2 true JP3866460B2 (ja) 2007-01-10

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JP26617699A Expired - Lifetime JP3866460B2 (ja) 1998-11-26 1999-09-20 不揮発性半導体記憶装置

Country Status (4)

Country Link
US (1) US6295227B1 (enExample)
JP (1) JP3866460B2 (enExample)
KR (1) KR100488380B1 (enExample)
TW (1) TW471155B (enExample)

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Publication number Priority date Publication date Assignee Title
WO2020112296A1 (en) * 2018-11-30 2020-06-04 Micron Technology, Inc. Vertical decoder
US10950284B2 (en) 2018-11-30 2021-03-16 Micron Technology, Inc. Vertical decoder
US11468930B2 (en) 2018-11-30 2022-10-11 Micron Technology, Inc. Vertical decoder

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US6295227B1 (en) 2001-09-25
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JP2000222895A (ja) 2000-08-11
KR100488380B1 (ko) 2005-05-11

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