JP2022510459A - シールドされた一体型デバイスパッケージ - Google Patents
シールドされた一体型デバイスパッケージ Download PDFInfo
- Publication number
- JP2022510459A JP2022510459A JP2021532070A JP2021532070A JP2022510459A JP 2022510459 A JP2022510459 A JP 2022510459A JP 2021532070 A JP2021532070 A JP 2021532070A JP 2021532070 A JP2021532070 A JP 2021532070A JP 2022510459 A JP2022510459 A JP 2022510459A
- Authority
- JP
- Japan
- Prior art keywords
- package
- integrated device
- device die
- die
- radiation shield
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 95
- 230000005855 radiation Effects 0.000 claims abstract description 77
- 239000000853 adhesive Substances 0.000 claims abstract description 52
- 230000001070 adhesive effect Effects 0.000 claims abstract description 52
- 238000000465 moulding Methods 0.000 claims abstract description 19
- 150000001875 compounds Chemical class 0.000 claims abstract description 14
- 125000006850 spacer group Chemical group 0.000 claims description 23
- 230000005670 electromagnetic radiation Effects 0.000 claims description 15
- 238000000034 method Methods 0.000 claims description 10
- 229910000679 solder Inorganic materials 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 229920000642 polymer Polymers 0.000 claims description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052721 tungsten Inorganic materials 0.000 claims description 4
- 239000010937 tungsten Substances 0.000 claims description 4
- 230000035945 sensitivity Effects 0.000 claims description 3
- 230000009969 flowable effect Effects 0.000 claims description 2
- UNILWMWFPHPYOR-KXEYIPSPSA-M 1-[6-[2-[3-[3-[3-[2-[2-[3-[[2-[2-[[(2r)-1-[[2-[[(2r)-1-[3-[2-[2-[3-[[2-(2-amino-2-oxoethoxy)acetyl]amino]propoxy]ethoxy]ethoxy]propylamino]-3-hydroxy-1-oxopropan-2-yl]amino]-2-oxoethyl]amino]-3-[(2r)-2,3-di(hexadecanoyloxy)propyl]sulfanyl-1-oxopropan-2-yl Chemical compound O=C1C(SCCC(=O)NCCCOCCOCCOCCCNC(=O)COCC(=O)N[C@@H](CSC[C@@H](COC(=O)CCCCCCCCCCCCCCC)OC(=O)CCCCCCCCCCCCCCC)C(=O)NCC(=O)N[C@H](CO)C(=O)NCCCOCCOCCOCCCNC(=O)COCC(N)=O)CC(=O)N1CCNC(=O)CCCCCN\1C2=CC=C(S([O-])(=O)=O)C=C2CC/1=C/C=C/C=C/C1=[N+](CC)C2=CC=C(S([O-])(=O)=O)C=C2C1 UNILWMWFPHPYOR-KXEYIPSPSA-M 0.000 description 11
- 239000000463 material Substances 0.000 description 10
- 238000002591 computed tomography Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000002457 bidirectional effect Effects 0.000 description 2
- SZUVGFMDDVSKSI-WIFOCOSTSA-N (1s,2s,3s,5r)-1-(carboxymethyl)-3,5-bis[(4-phenoxyphenyl)methyl-propylcarbamoyl]cyclopentane-1,2-dicarboxylic acid Chemical compound O=C([C@@H]1[C@@H]([C@](CC(O)=O)([C@H](C(=O)N(CCC)CC=2C=CC(OC=3C=CC=CC=3)=CC=2)C1)C(O)=O)C(O)=O)N(CCC)CC(C=C1)=CC=C1OC1=CC=CC=C1 SZUVGFMDDVSKSI-WIFOCOSTSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 102100026827 Protein associated with UVRAG as autophagy enhancer Human genes 0.000 description 1
- 101710102978 Protein associated with UVRAG as autophagy enhancer Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 229940126543 compound 14 Drugs 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 239000011133 lead Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000003607 modifier Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000002601 radiography Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- -1 stainless steel) Chemical class 0.000 description 1
- 238000012285 ultrasound imaging Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/24—Measuring radiation intensity with semiconductor detectors
- G01T1/244—Auxiliary details, e.g. casings, cooling, damping or insulation against damage by, e.g. heat, pressure or the like
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/552—Protection against radiation, e.g. light or electromagnetic waves
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
- H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14623—Optical shielding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14634—Assemblies, i.e. Hybrid structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14659—Direct radiation imagers structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29075—Plural core members
- H01L2224/2908—Plural core members being stacked
- H01L2224/29083—Three-layer arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/32227—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the layer connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
本出願は、2018年12月6日に出願された米国仮特許出願第62/776,340号の優先権を主張し、その全内容が、あらゆる目的のために、参照により本明細書に組み込まれる。
さまざまなタイプの一体型デバイスパッケージにおいて、一体型デバイスダイに衝突する電磁放射線(例えば、X線)が、一体型デバイスダイの回路を損傷し得る。例えば、X線撮像またはコンピュータ断層撮影(CT)撮像などのいくつかの医療撮像用途では、放射線がダイに衝突することがあり、ダイの性能を損なったり、または別様に低下させたりし得る。したがって、衝突した電磁放射線による一体型デバイスダイへの損傷を低減または防止する必要性が引き続き存在する。
2 一体型デバイスパッケージ
3 センサアセンブリ
4 センサ基板
5 センサダイ
6 照明源
7 パッケージ基板
8 電磁シールド
9 接着剤
10 一体型デバイスダイ
11 接着剤
12 ボンディングワイヤ
13 成形コンパウンド
14 はんだボール
15 センサアセンブリの前側
16 センサアセンブリの裏側
17 接着剤
18 スペーサ
19 接着剤
20 要素
21 ボンディングワイヤ
22a、22b 受動デバイス
23 取り付け構造
31 接触パッド
35 ボンドパッド
36 導電性ルーティングトレース
40 ヒートシンク
42 凹部
43 ヒートシンクの側面部分
44 電気コネクタ
50 パッケージ蓋
54 基板貫通ビア
56 第2の一体型デバイスダイ
Claims (36)
- 一体型デバイスパッケージであって、
パッケージ基板であって、複数の接触パッドを前記パッケージ基板の第1の側に有し、前記複数の接触パッドは、センサアセンブリに電気的に接続するように構成されている、パッケージ基板と、
前記パッケージ基板の第2の側に第1の接着剤によって装着された放射線シールドであって、前記第1の側は前記第2の側とは反対側である、放射線シールドと、
前記放射線シールドに第2の接着剤によって装着された一体型デバイスダイであって、前記一体型デバイスダイの高感度能動領域内に高感度能動電子回路を備え、前記センサアセンブリから前記一体型デバイスダイに前記接触パッドを介して送信された信号を処理するように構成され、前記処理された信号を外部デバイスに前記接触パッドを介して送信するように構成された、一体型デバイスダイと、
前記一体型デバイスダイおよび前記放射線シールドの上の成形コンパウンドと、を備える一体型デバイスパッケージ。 - 前記パッケージ基板から前記成形コンパウンドを通って前記成形コンパウンドの外側表面まで、電気コネクタが延在しない、請求項1に記載のパッケージ。
- 前記放射線シールドの横方向専有領域が、前記一体型デバイスダイの前記高感度能動領域の横方向専有領域よりも大きい、請求項1に記載のパッケージ。
- 前記放射線シールドの横方向専有領域は、前記一体型デバイスダイの横方向専有領域よりも大きい、請求項1に記載のパッケージ。
- 前記放射線シールドの横方向専有領域は、前記一体型デバイスダイの横方向専有領域よりも小さい、請求項1に記載のパッケージ。
- 前記放射線シールドは、タングステンを含む、請求項1~5のいずれか1項に記載のパッケージ。
- 前記放射線シールドは、9g/cm3~22g/cm3の範囲内の密度を有する金属を含む、請求項1~6のいずれか1項に記載のパッケージ。
- 前記放射線シールドは、0.4mm~1.2mmの範囲内の厚さを有する、請求項1~7のいずれか1項に記載のパッケージ。
- 前記一体型デバイスダイは、前記パッケージ基板に1つ以上のボンディングワイヤによって接続されている、請求項1~8のいずれか1項に記載のパッケージ。
- 前記一体型デバイスダイに第3の接着剤によって取り付けられたスペーサをさらに備える、請求項1~9のいずれか1項に記載のパッケージ。
- 前記スペーサに第4の接着剤によって取り付けられた要素をさらに備える、請求項10に記載のパッケージ。
- 前記要素は、前記スペーサよりも幅が狭い、請求項11に記載のパッケージ。
- 前記要素は、第2の一体型デバイスダイを含む、請求項11および12のいずれか1項に記載のパッケージ。
- 前記要素は、前記一体型デバイスダイの反対側の前記スペーサに取り付けられた第2の放射線シールドを含み、前記放射線シールドは、前記一体型デバイスダイの第1の側を電磁放射線からシールドするように位置付けられ、前記第2の放射線シールドは、前記一体型デバイスダイの第2の側を電磁放射線からシールドするように位置付けられ、前記第1の側は前記第2の側とは反対側である、請求項11および12のいずれか1項に記載のパッケージ。
- 前記一体型デバイスダイの上に取り付け構造をさらに備え、前記取り付け構造は、フィルムを含む、請求項1~14のいずれか1項に記載のパッケージ。
- 前記取り付け構造に取り付けられた要素をさらに備える、請求項15に記載のパッケージ。
- 前記フィルムは、流動可能状態と硬化状態とを有する、請求項15および16のいずれか1項に記載のパッケージ。
- 前記フィルムは、ポリマーを含む、請求項15~17のいずれか1項に記載のパッケージ。
- 前記パッケージ基板は、導電性ルーティングトレースを有する絶縁基板を備え、前記導電性ルーティングトレースは、前記複数の接触パッドを前記パッケージ基板の前記第2の側の対応するボンドパッドと電気的に接続する、請求項1~18のいずれか1項に記載のパッケージ。
- 一体型デバイスパッケージであって、
導電性ルーティングトレースを有する絶縁基板を備えるパッケージ基板であって、複数の接触パッドを前記パッケージ基板の第1の側に有し、前記複数の接触パッドは、センサアセンブリに電気的に接続するように構成された、パッケージ基板と、
前記パッケージ基板の第2の側に第1の接着剤によって装着された放射線シールドであって、前記第1の側は前記第2の側とは反対側である、放射線シールドと、
前記放射線シールドに第2の接着剤によって装着された一体型デバイスダイであって、前記一体型デバイスダイの高感度能動領域内に高感度能動電子回路を備え、前記センサアセンブリから前記一体型デバイスダイに前記接触パッドを介して送信された信号を処理するように構成され、前記処理された信号を外部デバイスに前記接触パッドを介して送信するように構成された、一体型デバイスダイと、を備える一体型デバイスパッケージ。 - 前記一体型デバイスダイおよび前記放射線シールドの上に成形コンパウンドをさらに備える、請求項20に記載の一体型デバイスパッケージ。
- 前記パッケージ基板に取り付けられて、前記一体型デバイスダイおよび前記放射線シールドがその中に配置される空洞を画定するパッケージ蓋をさらに備える、請求項20に記載の一体型デバイスパッケージ。
- 前記一体型デバイスダイに取り付けられた要素をさらに備える、請求項20~22のいずれか1項に記載の一体型デバイスパッケージ。
- 前記要素は、第2の放射線シールドを含む、請求項23に記載の一体型デバイスパッケージ。
- 前記要素は、第2の一体型デバイスダイを含む、請求項23に記載の一体型デバイスパッケージ。
- 前記要素は、スペーサを含み、前記一体型デバイスパッケージは、前記スペーサに取り付けられた第2の一体型デバイスダイをさらに備える、請求項23に記載の一体型デバイスパッケージ。
- センサモジュールであって、
一体型デバイスダイおよび放射線シールドを備える一体型デバイスパッケージと、
センサ基板、および前記センサ基板の前側に取り付けられたセンサダイを備えるセンサアセンブリと、
前記センサ基板の裏側にある電気コネクタであって、外部デバイスに電気的に接続するように構成され、前記一体型デバイスパッケージは、前記センサ基板を通して前記電気コネクタに電気的に接続されている、電気コネクタと、を備えるセンサモジュール。 - 前記一体型デバイスパッケージは、第1の側と、前記第1の側とは反対側の第2の側とを有するパッケージ基板を備え、前記一体型デバイスダイおよび放射線シールドは、前記パッケージ基板の前記第2の側に配置され、前記パッケージ基板の前記第1の側にある接触パッドが、前記センサ基板の裏側にある接触パッドに物理的かつ電気的に接続されている、請求項27に記載のセンサモジュール。
- 前記放射線シールドは、前記パッケージ基板の前記第2の側に第1の接着剤によって装着され、前記一体型デバイスダイは、前記放射線シールドに第2の接着剤によって装着されている、請求項27または28に記載のセンサモジュール。
- 前記一体型デバイスダイは、前記パッケージ基板にボンディングワイヤによってワイヤボンディングされている、請求項28に記載のセンサモジュール。
- 前記一体型デバイスダイは、前記パッケージ基板の前記第1の側にフリップチップ接続によって取り付けられ、前記放射線シールドは、前記一体型デバイスダイに接着剤によって装着されている、請求項27または28に記載のセンサモジュール。
- 前記一体型デバイスダイおよび前記放射線シールドの上に成形コンパウンドをさらに備える、請求項27~31のいずれか1項に記載のセンサモジュール。
- 前記パッケージ基板に取り付けられて、前記一体型デバイスダイおよび前記放射線シールドがその中に配置される空洞を画定するパッケージ蓋をさらに備える、請求項27~31のいずれか1項に記載のセンサモジュール。
- 一体型デバイスパッケージであって、
パッケージ基板と、
一体型デバイスダイであって、前記パッケージ基板と前記一体型デバイスダイとの間に複数のはんだボールを備えるフリップチップ接続によって前記パッケージ基板に取り付けられた一体型デバイスダイと、
前記一体型デバイスダイに接着剤によって装着された放射線シールドと、を備える一体型デバイスパッケージ。 - 前記一体型デバイスダイおよび放射線シールドの上に成形コンパウンドをさらに備える、請求項34に記載のパッケージ。
- 前記パッケージ基板に取り付けられて、前記一体型デバイスダイおよび放射線シールドがその中に配置される空洞を画定するパッケージ蓋をさらに備える、請求項34に記載のパッケージ。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862776340P | 2018-12-06 | 2018-12-06 | |
US62/776,340 | 2018-12-06 | ||
PCT/US2019/064770 WO2020118102A1 (en) | 2018-12-06 | 2019-12-05 | Shielded integrated device packages |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022510459A true JP2022510459A (ja) | 2022-01-26 |
JP7491923B2 JP7491923B2 (ja) | 2024-05-28 |
Family
ID=70972152
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021532070A Active JP7491923B2 (ja) | 2018-12-06 | 2019-12-05 | シールドされた一体型デバイスパッケージ |
Country Status (6)
Country | Link |
---|---|
US (1) | US12002838B2 (ja) |
EP (1) | EP3890612A4 (ja) |
JP (1) | JP7491923B2 (ja) |
KR (1) | KR20210099604A (ja) |
CN (1) | CN113395936A (ja) |
WO (1) | WO2020118102A1 (ja) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2022510692A (ja) | 2018-12-06 | 2022-01-27 | アナログ ディヴァイスィズ インク | パッシブデバイスアセンブリを備えた集積デバイスパッケージ |
US11355450B2 (en) * | 2019-08-01 | 2022-06-07 | Mediatek Inc. | Semiconductor package with EMI shielding structure |
CN113823645A (zh) * | 2020-06-18 | 2021-12-21 | 胜丽国际股份有限公司 | 感测器封装结构 |
US11664340B2 (en) | 2020-07-13 | 2023-05-30 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
Family Cites Families (125)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1552078A (ja) | 1967-11-15 | 1969-01-03 | ||
DE3885653T2 (de) | 1987-05-26 | 1994-06-01 | Matsushita Electric Ind Co Ltd | Strahlungsdetektor. |
CN1139872A (zh) | 1994-02-03 | 1997-01-08 | 模拟公司 | 层析x射线照相装置的模式化检测装置 |
US6720493B1 (en) | 1994-04-01 | 2004-04-13 | Space Electronics, Inc. | Radiation shielding of integrated circuits and multi-chip modules in ceramic and metal packages |
US5528043A (en) | 1995-04-21 | 1996-06-18 | Thermotrex Corporation | X-ray image sensor |
JPH0998970A (ja) | 1995-10-06 | 1997-04-15 | Canon Inc | X線撮像装置 |
US5889313A (en) | 1996-02-08 | 1999-03-30 | University Of Hawaii | Three-dimensional architecture for solid state radiation detectors |
JPH10284633A (ja) | 1997-04-01 | 1998-10-23 | Hitachi Ltd | 半導体集積回路装置およびその製造方法 |
JPH11345956A (ja) | 1998-03-16 | 1999-12-14 | Canon Inc | 撮像装置 |
US6300679B1 (en) | 1998-06-01 | 2001-10-09 | Semiconductor Components Industries, Llc | Flexible substrate for packaging a semiconductor component |
EP1684095B1 (en) | 1998-06-18 | 2013-09-04 | Hamamatsu Photonics K.K. | Scintillator panel and radiation image sensor |
US6601947B1 (en) | 1999-03-31 | 2003-08-05 | Seiko Epson Corporation | Narrow-pitch connector, electrostatic actuator, piezoelectric actuator, ink-jet head, ink-jet printer, micromachine, liquid crystal panel, and electronic apparatus |
JP2001099942A (ja) | 1999-09-29 | 2001-04-13 | Toshiba Corp | X線平面検出装置 |
US6396898B1 (en) | 1999-12-24 | 2002-05-28 | Kabushiki Kaisha Toshiba | Radiation detector and x-ray CT apparatus |
JP2002022841A (ja) | 2000-07-04 | 2002-01-23 | Canon Inc | 放射線撮影装置及びそれを備えたシステム |
JP4532782B2 (ja) * | 2000-07-04 | 2010-08-25 | キヤノン株式会社 | 放射線撮像装置及びシステム |
JP4610811B2 (ja) | 2000-09-15 | 2011-01-12 | アイメック | プローブの製造方法及びその装置 |
JP3887162B2 (ja) | 2000-10-19 | 2007-02-28 | 富士通株式会社 | 撮像用半導体装置 |
US6426991B1 (en) | 2000-11-16 | 2002-07-30 | Koninklijke Philips Electronics N.V. | Back-illuminated photodiodes for computed tomography detectors |
US6717150B2 (en) | 2000-12-12 | 2004-04-06 | Ge Medical Systems Global Technology Company, Llc | Solid-state CT detector modules with improved scintillator/diode coupling |
DE10116222A1 (de) | 2001-03-30 | 2002-10-17 | Siemens Ag | Detektor für Röntgen-Computertomograph |
JP2003084066A (ja) | 2001-04-11 | 2003-03-19 | Nippon Kessho Kogaku Kk | 放射線検出器用部品、放射線検出器および放射線検出装置 |
IL143980A0 (en) | 2001-06-25 | 2002-04-21 | Imarad Imaging Systems Ltd | Three dimensional radiation detection |
US6510195B1 (en) | 2001-07-18 | 2003-01-21 | Koninklijke Philips Electronics, N.V. | Solid state x-radiation detector modules and mosaics thereof, and an imaging method and apparatus employing the same |
US6776817B2 (en) | 2001-11-26 | 2004-08-17 | Honeywell International Inc. | Airflow sensor, system and method for detecting airflow within an air handling system |
US7189971B2 (en) | 2002-02-15 | 2007-03-13 | Oy Ajat Ltd | Radiation imaging device and system |
JP2003332515A (ja) | 2002-05-09 | 2003-11-21 | Sharp Corp | 半導体集積回路装置およびその製造方法 |
US7382043B2 (en) | 2002-09-25 | 2008-06-03 | Maxwell Technologies, Inc. | Method and apparatus for shielding an integrated circuit from radiation |
EP1852716A3 (en) * | 2002-10-07 | 2007-11-14 | Hitachi, Ltd. | Radiation detector, radiation detector element, and radiation imaging apparatus |
JP4596748B2 (ja) | 2003-05-07 | 2010-12-15 | キヤノン株式会社 | 放射線画像撮影装置及び放射線画像撮影装置における再構成方法 |
US7191516B2 (en) * | 2003-07-16 | 2007-03-20 | Maxwell Technologies, Inc. | Method for shielding integrated circuit devices |
DE10335662A1 (de) | 2003-08-04 | 2005-03-10 | Siemens Ag | Detektormodul für einen Detektor zur Detektion ionisierender Strahlung sowie Detektor |
US6903271B2 (en) | 2003-09-30 | 2005-06-07 | Intel Corporation | Electronic assembly with thermally separated support |
US7193218B2 (en) | 2003-10-29 | 2007-03-20 | Canon Kabushiki Kaisha | Radiation detection device, method of producing the same, and radiation image pick-up system |
JP4594624B2 (ja) | 2004-01-13 | 2010-12-08 | 株式会社日立製作所 | 放射線検出装置および核医学診断装置 |
US7067817B2 (en) | 2004-01-29 | 2006-06-27 | Hamamatsu Photonics K.K. | Radiation image sensor and making method of same |
US7714931B2 (en) | 2004-06-25 | 2010-05-11 | Flextronics International Usa, Inc. | System and method for mounting an image capture device on a flexible substrate |
JP2008506945A (ja) | 2004-07-14 | 2008-03-06 | オーボテック メディカル ソリューションズ リミティド | 放射線検出器ヘッド |
JP4380460B2 (ja) | 2004-08-10 | 2009-12-09 | キヤノン株式会社 | 放射線検出装置、シンチレータパネル、及び放射線検出システム |
TWM264651U (en) | 2004-10-21 | 2005-05-11 | Chipmos Technologies Inc | Package structure of image sensor device |
DE102005014187B4 (de) | 2005-03-29 | 2017-02-23 | Siemens Healthcare Gmbh | Detektormodul, Detektor und Computertomographiegerät |
US20060223227A1 (en) | 2005-04-04 | 2006-10-05 | Tessera, Inc. | Molding method for foldover package |
JP5128052B2 (ja) | 2005-04-22 | 2013-01-23 | 浜松ホトニクス株式会社 | 光検出ユニット、光検出装置、及びx線断層撮像装置 |
TW201101476A (en) * | 2005-06-02 | 2011-01-01 | Sony Corp | Semiconductor image sensor module and method of manufacturing the same |
JP4604865B2 (ja) | 2005-06-15 | 2011-01-05 | 株式会社島津製作所 | 集積回路パッケージから集積回路を取り出す方法 |
JP5159065B2 (ja) | 2005-08-31 | 2013-03-06 | キヤノン株式会社 | 放射線検出装置、放射線撮像装置および放射線撮像システム |
DE102005041452A1 (de) | 2005-08-31 | 2007-03-15 | Infineon Technologies Ag | Dreidimensional integrierte elektronische Baugruppe |
DE102005041451A1 (de) | 2005-08-31 | 2007-03-01 | Infineon Technologies Ag | Elektronische Steckeinheit |
EP1934633A2 (en) | 2005-10-05 | 2008-06-25 | Koninklijke Philips Electronics N.V. | Computed tomography detector using thin circuits |
US20070183184A1 (en) | 2006-02-03 | 2007-08-09 | Semiconductor Energy Laboratory Ltd. | Apparatus and method for manufacturing semiconductor device |
JP4425936B2 (ja) | 2006-02-20 | 2010-03-03 | Necエレクトロニクス株式会社 | 光モジュール |
US7544947B2 (en) | 2006-03-08 | 2009-06-09 | Aeroflex Colorado Springs Inc. | Cross-talk and back side shielding in a front side illuminated photo detector diode array |
US7834325B2 (en) | 2006-03-24 | 2010-11-16 | Fujifilm Corporation | Radiation image information capturing apparatus and method of detecting temperature of amplifier thereof |
EP2005475A2 (en) | 2006-03-30 | 2008-12-24 | Koninklijke Philips Electronics N.V. | Radiation detector array |
DE102006016345A1 (de) | 2006-04-05 | 2007-10-18 | Infineon Technologies Ag | Halbleitermodul mit diskreten Bauelementen und Verfahren zur Herstellung desselben |
US7495226B2 (en) | 2006-05-26 | 2009-02-24 | Carestream Health, Inc. | Compact and durable encasement for a digital radiography detector |
US7504637B2 (en) | 2006-07-11 | 2009-03-17 | Aeroflex Colorado Springs Inc. | Two component photodiode detector |
JP2008109378A (ja) | 2006-10-25 | 2008-05-08 | Matsushita Electric Ind Co Ltd | 光学デバイスモジュールとその製造方法および光学デバイスユニットとその製造方法 |
US8154881B2 (en) | 2006-11-13 | 2012-04-10 | Telecommunication Systems, Inc. | Radiation-shielded semiconductor assembly |
JP2008171881A (ja) | 2007-01-09 | 2008-07-24 | Shimadzu Corp | 光または放射線検出器 |
US20080197480A1 (en) | 2007-02-16 | 2008-08-21 | Advanced Chip Engineering Technology Inc. | Semiconductor device package with multi-chips and method of the same |
JP2008268038A (ja) | 2007-04-23 | 2008-11-06 | Hitachi Ltd | 半導体放射線検出器及び産業用x線ct装置 |
JP5419099B2 (ja) | 2007-05-15 | 2014-02-19 | エアロフレックス コロラド スプリングス インコーポレイテッド | 直接変換型放射線検出器およびイオン化放射線を直接電流に変換する方法 |
US7468514B1 (en) | 2007-06-15 | 2008-12-23 | Hamamatsu Photonics K.K. | Radiation image conversion panel, scintillator panel, and radiation image sensor |
JP4733092B2 (ja) | 2007-09-28 | 2011-07-27 | 富士フイルム株式会社 | 放射線画像撮影装置 |
JP5032276B2 (ja) | 2007-11-19 | 2012-09-26 | 株式会社東芝 | 放射線検出装置 |
JP2009189384A (ja) | 2008-02-12 | 2009-08-27 | Hitachi Medical Corp | X線ct装置 |
JP5137763B2 (ja) | 2008-09-26 | 2013-02-06 | 富士フイルム株式会社 | 放射線検出装置及び放射線画像撮影システム |
US8373132B2 (en) * | 2009-02-06 | 2013-02-12 | Koninklijke Philips Electronics N. V. | Radiation detector with a stack of scintillator elements and photodiode arrays |
JP5281484B2 (ja) | 2009-05-28 | 2013-09-04 | 浜松ホトニクス株式会社 | 放射線検出ユニット |
US8263434B2 (en) | 2009-07-31 | 2012-09-11 | Stats Chippac, Ltd. | Semiconductor device and method of mounting die with TSV in cavity of substrate for electrical interconnect of Fi-PoP |
US8325048B2 (en) | 2009-12-08 | 2012-12-04 | Kimberly-Clark Worldwide, Inc. | Thermal stress indicator |
JP5544872B2 (ja) | 2009-12-25 | 2014-07-09 | 富士通セミコンダクター株式会社 | 半導体装置及びその製造方法 |
JP5358509B2 (ja) | 2010-04-15 | 2013-12-04 | 浜松ホトニクス株式会社 | 放射線検出器モジュール |
KR101855294B1 (ko) * | 2010-06-10 | 2018-05-08 | 삼성전자주식회사 | 반도체 패키지 |
JP2012088152A (ja) | 2010-10-19 | 2012-05-10 | Toshiba Electron Tubes & Devices Co Ltd | 放射線検出装置 |
CN102639061B (zh) | 2010-10-20 | 2015-11-25 | 株式会社东芝 | Das检测器以及x射线计算机断层摄影装置 |
US8384227B2 (en) | 2010-11-16 | 2013-02-26 | Stats Chippac, Ltd. | Semiconductor device and method of forming interposer frame electrically connected to embedded semiconductor die |
JP2012124466A (ja) | 2010-11-18 | 2012-06-28 | Nitto Denko Corp | 半導体装置用接着フィルム、及び、半導体装置 |
RU2595795C2 (ru) * | 2011-03-24 | 2016-08-27 | Конинклейке Филипс Н.В. | Спектральный детектор изображения |
US8829454B2 (en) | 2012-02-27 | 2014-09-09 | Analog Devices, Inc. | Compact sensor module |
US9078597B2 (en) * | 2012-04-05 | 2015-07-14 | General Electric Company | Mobile x-ray unit with integrated x-ray shield |
JP5815483B2 (ja) | 2012-07-27 | 2015-11-17 | 富士フイルム株式会社 | 放射線画像撮影装置 |
US9035457B2 (en) | 2012-11-29 | 2015-05-19 | United Microelectronics Corp. | Substrate with integrated passive devices and method of manufacturing the same |
US9116022B2 (en) | 2012-12-07 | 2015-08-25 | Analog Devices, Inc. | Compact sensor module |
US9354186B2 (en) * | 2013-03-13 | 2016-05-31 | Texas Instruments Incorporated | X-ray sensor and signal processing assembly for an X-ray computed tomography machine |
US9324687B1 (en) | 2013-03-14 | 2016-04-26 | Maxim Integrated Products, Inc. | Wafer-level passive device integration |
US9209136B2 (en) | 2013-04-01 | 2015-12-08 | Intel Corporation | Hybrid carbon-metal interconnect structures |
US20140321601A1 (en) * | 2013-04-26 | 2014-10-30 | Texas Instruments Incorporated | Active shield for x-ray computed tomography machine |
US10007008B2 (en) * | 2013-07-26 | 2018-06-26 | Analogic Corporation | Detector unit for detector array of radiation imaging modality |
US10074628B2 (en) | 2013-10-04 | 2018-09-11 | Mediatek Inc. | System-in-package and fabrication method thereof |
EP3084477B1 (en) | 2013-12-17 | 2020-05-20 | Agfa Nv | Radiography flat panel detector having a low weight x-ray shield and the method of production thereof |
KR102434823B1 (ko) | 2014-03-10 | 2022-08-19 | 데카 테크놀로지 유에스에이 인코포레이티드 | 두꺼운 재배선 층을 포함하는 반도체 디바이스 및 방법 |
US10084983B2 (en) * | 2014-04-29 | 2018-09-25 | Fermi Research Alliance, Llc | Wafer-scale pixelated detector system |
US9257396B2 (en) | 2014-05-22 | 2016-02-09 | Invensas Corporation | Compact semiconductor package and related methods |
KR20160022549A (ko) | 2014-08-20 | 2016-03-02 | 삼성전자주식회사 | 엑스선 검출 장치 |
JP2016058627A (ja) | 2014-09-11 | 2016-04-21 | 株式会社東芝 | 半導体装置 |
WO2016048367A1 (en) | 2014-09-26 | 2016-03-31 | Intel Corporation | Integrated circuit die having backside passive components and methods associated therewith |
JP6353763B2 (ja) * | 2014-09-30 | 2018-07-04 | 新光電気工業株式会社 | 半導体装置及びその製造方法 |
US10488532B2 (en) | 2014-10-20 | 2019-11-26 | Analogic Corporation | Detector unit for detector array of radiation imaging modality |
US9425143B2 (en) | 2014-11-17 | 2016-08-23 | Qualcomm Incorporated | Integrated device package comprising an electromagnetic (EM) passive device in an encapsulation layer, and an EM shield |
US9337233B1 (en) * | 2014-12-15 | 2016-05-10 | General Electric Company | Photodiode array for imaging applications |
US9583472B2 (en) | 2015-03-03 | 2017-02-28 | Apple Inc. | Fan out system in package and method for forming the same |
US9818727B2 (en) | 2015-03-09 | 2017-11-14 | Mediatek Inc. | Semiconductor package assembly with passive device |
EP3283903A1 (en) * | 2015-04-14 | 2018-02-21 | Analogic Corporation | Detector array for radiation system |
KR102354370B1 (ko) * | 2015-04-29 | 2022-01-21 | 삼성전자주식회사 | 쉴딩 구조물을 포함하는 자기 저항 칩 패키지 |
US9835733B2 (en) | 2015-04-30 | 2017-12-05 | Zhengrong Ying | Apparatus for detecting X-rays |
US10283492B2 (en) | 2015-06-23 | 2019-05-07 | Invensas Corporation | Laminated interposers and packages with embedded trace interconnects |
WO2017014798A1 (en) | 2015-07-17 | 2017-01-26 | Analogic Corporation | Detector unit for detector array of radiation imaging modality |
KR102463838B1 (ko) | 2015-08-24 | 2022-11-04 | 삼성디스플레이 주식회사 | 가요성 표시 장치와 이의 제조 방법 |
US20170084521A1 (en) * | 2015-09-18 | 2017-03-23 | Industrial Technology Research Institute | Semiconductor package structure |
US9837352B2 (en) | 2015-10-07 | 2017-12-05 | Advanced Semiconductor Engineering, Inc. | Semiconductor device and method for manufacturing the same |
US9786838B2 (en) | 2015-10-13 | 2017-10-10 | Everspin Technologies, Inc. | Packages for integrated circuits and methods of packaging integrated circuits |
US10165682B2 (en) | 2015-12-28 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Opening in the pad for bonding integrated passive device in InFO package |
JP2017183398A (ja) * | 2016-03-29 | 2017-10-05 | 東芝メモリ株式会社 | 半導体装置及びその製造方法 |
US10236091B2 (en) * | 2016-07-14 | 2019-03-19 | Carestream Health, Inc. | Backscatter shields and methods of shielding |
DE102016115770A1 (de) | 2016-08-25 | 2018-03-01 | Smiths Heimann Gmbh | Strahlenschutzelement mit integrierter Austauschanzeige |
US10586909B2 (en) * | 2016-10-11 | 2020-03-10 | Massachusetts Institute Of Technology | Cryogenic electronic packages and assemblies |
US10276525B2 (en) | 2016-11-28 | 2019-04-30 | Taiwan Semiconductor Manufacturing Co., Ltd. | Package structure and method of fabricating the same |
US11177220B2 (en) | 2017-04-01 | 2021-11-16 | Intel Corporation | Vertical and lateral interconnects between dies |
US20180294255A1 (en) | 2017-04-11 | 2018-10-11 | Mediatek Inc. | Method for fabricating microelectronic package with surface mounted passive element |
US20190067034A1 (en) * | 2017-08-24 | 2019-02-28 | Micron Technology, Inc. | Hybrid additive structure stackable memory die using wire bond |
US11067707B2 (en) * | 2018-05-07 | 2021-07-20 | Redlen Technologies, Inc. | Four-side buttable radiation detector unit and method of making thereof |
JP6978690B2 (ja) * | 2018-05-25 | 2021-12-08 | 日亜化学工業株式会社 | 透光性部材の形成方法および発光装置の製造方法、ならびに、発光装置 |
JP2022510692A (ja) * | 2018-12-06 | 2022-01-27 | アナログ ディヴァイスィズ インク | パッシブデバイスアセンブリを備えた集積デバイスパッケージ |
-
2019
- 2019-12-05 CN CN201980091428.2A patent/CN113395936A/zh active Pending
- 2019-12-05 US US16/705,105 patent/US12002838B2/en active Active
- 2019-12-05 WO PCT/US2019/064770 patent/WO2020118102A1/en unknown
- 2019-12-05 EP EP19892191.8A patent/EP3890612A4/en active Pending
- 2019-12-05 KR KR1020217020119A patent/KR20210099604A/ko not_active Application Discontinuation
- 2019-12-05 JP JP2021532070A patent/JP7491923B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP7491923B2 (ja) | 2024-05-28 |
CN113395936A (zh) | 2021-09-14 |
US20200185450A1 (en) | 2020-06-11 |
US12002838B2 (en) | 2024-06-04 |
KR20210099604A (ko) | 2021-08-12 |
EP3890612A4 (en) | 2022-10-05 |
EP3890612A1 (en) | 2021-10-13 |
WO2020118102A1 (en) | 2020-06-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP7491923B2 (ja) | シールドされた一体型デバイスパッケージ | |
CN109196646B (zh) | 图像传感器半导体封装及相关方法 | |
US6359341B1 (en) | Ball grid array integrated circuit package structure | |
US7327015B2 (en) | Semiconductor device package | |
US6818978B1 (en) | Ball grid array package with shielding | |
KR20180054817A (ko) | 간섭 차폐를 위한 와이어 본드 와이어 | |
US20070096335A1 (en) | Chip stack structure having shielding capability and system-in-package module using the same | |
US11688709B2 (en) | Integrated device packages with passive device assemblies | |
JP6745846B2 (ja) | 集積デバイスダイを担体に載置するための負のフィレット | |
US20060208347A1 (en) | Semiconductor device package | |
KR20140081859A (ko) | 웨이러 레벨 적용된 rf 실드 | |
TW201806139A (zh) | 含中介層之半導體封裝 | |
KR20120101965A (ko) | 반도체 패키지 및 그의 제조 방법 | |
CN107924876B (zh) | 具有不同尺寸的开孔的焊盘 | |
KR20140043568A (ko) | 반도체 패키지 및 그 제조방법 | |
KR20150050189A (ko) | 반도체 패키지 | |
KR20180023488A (ko) | 반도체 패키지 및 반도체 패키지 제조방법 | |
KR20150076816A (ko) | 전자 부품 모듈 | |
CN111066141B (zh) | 用于电子器件的抗辐射封装件 | |
KR101228731B1 (ko) | 전자 부품 모듈 및 그의 제조 방법 | |
CN112420628A (zh) | 半导体封装件 | |
JP2009177123A (ja) | スタック型チップパッケージ構造およびその製造方法 | |
KR20090114493A (ko) | 반도체 패키지 및 그 제조 방법 | |
JP2004119882A (ja) | 半導体装置 | |
TWI449149B (zh) | 具金屬元件之封裝結構 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20221202 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20231222 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20231225 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20240325 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20240401 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20240430 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20240516 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7491923 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |