CN111066141B - 用于电子器件的抗辐射封装件 - Google Patents

用于电子器件的抗辐射封装件 Download PDF

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CN111066141B
CN111066141B CN201880041947.3A CN201880041947A CN111066141B CN 111066141 B CN111066141 B CN 111066141B CN 201880041947 A CN201880041947 A CN 201880041947A CN 111066141 B CN111066141 B CN 111066141B
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package
electronic device
shield
carrier
nanomaterial
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CN111066141A (zh
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延斯·霍弗里希特
吉·迈南
约瑟夫·佩特尔
托马斯·特罗克勒
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Ams International AG
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Ams International AG
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Abstract

封装件包括载体(1)、布置在载体(1)上的电子器件(2)、布置在电子器件的背离载体的一侧上的屏蔽件(22)以及施加在屏蔽件上或上方的包含纳米材料的吸收膜(23)。

Description

用于电子器件的抗辐射封装件
技术领域
本发明涉及电子器件、特别是是用于检测诸如X射线或伽马射线的高能辐射的成像设备的领域。更具体地，本发明涉及计算机断层扫描成像系统、X射线平板探测器、荧光透视、乳腺X线摄影、血管造影、正电子发射层描术、伽马照相机以及涉及非常短波长的电磁辐射和电离辐射的医学成像设备的其他变型。本发明还涉及空间应用(例如卫星)、故障分析或安全应用。
背景技术
各种方法被使用来保护敏感电子部件免受X射线辐射影响。为此，可以采用原子序数大的金属(诸如钨或铅)的屏蔽件。如果材料有毒或过于昂贵，则避免使用此类材料。
US 2015/0076670 A1公开了一种安装在基底上的芯片，并且芯片的罩由封装材料形成。公开了用于封装材料的电磁屏蔽滤波器的碳纳米管和碳纳米胶囊。
US 2010/0244286 A1公开了用于封装光电设备的纳米复合材料。芯片安装在PCB针座上，并且用封装材料覆盖。用纳米复合材料封装光电子器件的方法包括浇铸、模制或圆顶封装体。
US 2008/0142932 A1公开了一种半导体器件，所述半导体器件具有嵌入在包括填料颗粒的塑料壳体组合物中的半导体芯片，所述填料颗粒尤其可以是碳纳米管。
US 2005/0184405 A1公开了一种包括芯片载体、芯片以及封装体的半导体封装件，所述封装体在其表面上包括电磁吸收层。所述吸收层用具有多个纳米级孔的多孔金属颗粒填充。
US 2011/0147902 A1公开了一种通过接合粘合剂接合到基底的芯片，所述芯片包括光吸收和/或光反射颗粒、特别是纳米颗粒，并且能够填充在芯片和基底之间的空腔。
US 2014/0038322 A1公开了一种装置，所述装置包括具有多个发光器件的裸片(die)、印刷电路板、以及包括光电探测器阵列的裸片。
发明内容
本发明的目的是提供一种用于电子器件的抗辐射(radiation-hardened)封装件。
该目的通过本发明的用于电子器件的封装件来实现。
在以下描述和权利要求中，术语“纳米材料”是指包括具有纳米颗粒的任何材料。纳米材料尤其能够包含纳米点、纳米棒、纳米线、量子点、量子棒或其任何组合。
在以下描述和权利要求中，术语“载体”是指包括印刷电路板(PCB)、层压板、柔性电路、基底或中介层。
通过适当地选择所述量子点或其他纳米颗粒的材料、材料成分、尺寸以及形状，量子点或其他纳米颗粒的吸收光谱能够被调整为吸收限定波长的辐射，例如X射线辐射。另外，纳米颗粒能够容易地与聚合物、胶以及其他有机物质混合，所述聚合物、胶水以及其他有机物质用于形成例如圆顶封装体或注塑成型罩的封装件的壳体。纳米颗粒的这些性质可以在抗辐射封装件中采用。
在本发明的一个方面，用于电子器件的封装件包括载体、布置在载体上的电子器件、布置在电子器件的背离载体的一侧上的屏蔽件、以及施加在屏蔽件上或上方的包含纳米材料的吸收膜。特别地，屏蔽件可以由铝、铜、钨或其组合形成。
在封装件的一个实施例中，屏蔽件和吸收膜仅布置在电子器件的背离载体的上表面的局部区域上。特别地，屏蔽件和吸收膜可以仅布置在电子器件的集成电路上方或者尤其布置在形成集成电路的部件的晶体管上方。
在本发明的另一方面，用于电子器件的封装件包括载体、布置在载体上的电子器件、以及布置在载体的与电子器件相对的一侧上的另一电子器件。电子器件具有包含纳米材料的罩、包含纳米材料的吸收膜或包含纳米材料的粘合层，并且另一电子器件也具有包含纳米材料的罩、包含纳米材料的吸收膜或包含纳米材料的粘合层。
在另一实施例中，电子器件和另一电子器件中的至少一个具有罩，并且罩包含纳米材料或具有包含纳米材料的吸收膜。罩尤其可以是圆顶封装体或圆顶封装体的一部分。罩可以替代地注塑成型。罩还可以包含塑料或陶瓷。
在另一实施例中，电子器件和另一电子器件中的至少一个在载体和电子器件之间或者在载体和另一电子器件之间分别具有粘合层，并且所述粘合层包含纳米材料。
另一实施例包括在电子器件中的集成电路和在另一电子器件中的光电二极管，所述集成电路被配置为用于光电二极管的读出电路。
另一实施例包括在载体中的互连件，所述互连件尤其将电子器件与另一电子器件电连接。
纳米材料可以包括选自以下的材料：PbS、PbSe、ZnS、ZnS、CdSe、CdTe、硫化铜、氧化铜、有机钙钛矿或无机钙钛矿或其任何组合。纳米材料可以包含纳米点、纳米棒、纳米线、或其任何组合。纳米棒、纳米线以及纳米点可以形成为具有至少一个维度，所述维度小于1000nm、小于100nm、或甚至小于10nm。
附图说明
以下是结合附图对抗辐射封装件的示例的详细描述。
图1是具有包含纳米材料的圆顶封装体的抗辐射封装件的横截面。
图2是具有包含纳米材料的注塑成型罩的抗辐射封装件的横截面。
图3是具有包含纳米材料的注塑成型罩和吸收膜的抗辐射封装件的横截面。
图4是具有包含纳米材料的粘合层的抗辐射封装件的横截面。
图5是具有吸收膜的抗辐射封装件的横截面，所述吸收膜包括施加到半导体芯片或裸片上的纳米材料。
图6是具有吸收膜的另一抗辐射封装件的横截面，所述吸收膜包括施加到半导体芯片或裸片上的纳米材料。
图7是具有包含纳米材料的粘合层的抗辐射封装件的组件的横截面。
图8是具有包含纳米材料的粘合层和包含纳米材料的圆顶封装体的抗辐射封装件的组件的横截面。
具体实施方式
图1是具有包含纳米材料的圆顶封装体的抗辐射封装件的横截面。电子器件2安装在例如可以是印刷电路板(PCB)、层压板、柔性电路、基底或中介层的载体1上。包含纳米材料的罩3布置在载体1上或上方。电子器件2位于由罩3形成的空腔4中。
罩3可以包括塑料或柔性基础材料，特别是例如适合于圆顶封装体的材料，例如聚合物。在这种情况下，空腔4可选地用其他材料填充。如果罩3由足够刚性的材料形成，则围绕电子器件2的空腔4的空间能够用气体填充或是真空。
可以通过将电子器件2嵌入圆顶封装体并将罩3施加在圆顶封装体上制造根据图1的封装件。因此，空腔4用圆顶封装体的材料填充。罩3的基础材料可以是例如也适合于圆顶封装体的材料，例如聚合物。
罩3可以尤其地包含用于X射线吸收的纳米颗粒、特别是吸收X射线辐射并重新发射可见光的闪烁纳米颗粒。电子器件2可以封装在填充空腔4的常规黑色不透明的圆顶封装体中，并且可以提供罩3用于加强的X射线吸收。
电子器件2可以包括具有BEOL(线后端)层6的半导体材料的基底5，所述BEOL层包括至少一个引线。例如焊盘7通过引线接合件8能够用于电连接。例如，引线接合件8可以连接到布置在载体1中的互连件31，用于外部电连接。
电子器件2可以包括各种集成部件，例如光电探测器9、集成电路10以及保护环11，如图1中示例性示出的。例如，可以特别地提供集成部件用于计算机断层扫描(CT)检测器。
图2是具有包含纳米材料的注塑成型罩的抗辐射封装件的横截面。与根据图1的封装件的元件对应的根据图2的封装件的元件用相同的附图标记表示。在根据图2的封装件中，罩3是注塑成型罩3。例如，围绕电子器件2的空腔4的空间可以留空，或者可以用固体材料、特别是用适合的例如聚合物的遮光材料填充。
包含纳米材料的吸收膜13可以施加在罩3上。如果具有六方最密堆积的量子点吸收膜要屏蔽能量不大于150keV的辐射，则最多需要膜厚度为1mm。如果存有包含纳米材料的足够厚的吸收膜13，则罩3可以由常规用于注塑成型罩的任何材料形成。在这种情况下，吸收膜13尤其可以包含吸收X射线的纳米颗粒，同时注塑成型罩3可以吸收可见光、紫外线或红外线。如果不施加吸收膜13，则注塑成型罩3至少局部地由纳米材料形成。
图3是具有注塑成型罩的另一抗辐射封装件的横截面。与根据图2的封装件的元件对应的根据图3的封装件的元件用相同的附图标记表示。在根据图3的封装件中，在电子器件2的集成部件和载体1中的互连件31之间的电连接由在基底5底部处的焊球12提供，所述底部包括在集成部件和焊球12之间形成电互连的基底通孔。
在根据图3的封装件中，注塑成型罩3可以包含纳米材料。替代地或此外，可以如根据图2的封装件中施加包含纳米材料的吸收膜13。
图4是具有包含纳米材料的粘合层的抗辐射封装件的横截面。与根据图2的封装件的元件对应的根据图4的封装件的元件用相同的附图标记表示。在根据图4的封装件中，借助于包含纳米材料的粘合层15将电子器件2并且特别是基底5安装在载体1上。粘合层15尤其可以包括包含纳米颗粒的导电胶。
在根据图4的封装件中，罩3可以是如图4中示例性示出的注塑成型罩，或者如根据图1的封装件中的圆顶封装体。罩3还可以包含纳米材料，所述纳米材料可以包括与粘合层15相同种类的纳米颗粒或不同种类的纳米颗粒。替代地或此外，如在根据图3的封装件中施加包含纳米材料的吸收膜13。
在根据图4的封装件中，可以提供焊盘7和引线接合件8，用于实现集成电路14的部件和载体1中的互连件31之间的电连接。替代地，可以如根据图3的封装件中使用在基底5底部处的焊球12。焊球12能够布置在粘合层15的开口中。如果粘合层15是导电的，则可以构造为在电子器件2和载体1的互连件之间形成单独的电连接。图4示出了在载体1的底部表面处用于外部电连接的另外的焊球16。
图5是具有吸收膜的抗辐射封装件的横截面，所述吸收膜包括施加到半导体芯片、晶圆级芯片封装件或裸片上的纳米材料。与根据图3的封装件的元件对应的根据图5的封装件的元件用相同的附图标记表示。电子器件2安装在例如可以是印刷电路板(PCB)、层压板、柔性电路、基底或中介层的载体1上。电子器件2可以包括具有BEOL(线后端)层6的半导体材料的基底5，所述BEOL层包括引线。例如，提供电连接的焊球12能够布置在基底5底部处并电连接到载体1中的互连件31。电子器件2可以包括各种集成部件，例如光电探测器9、集成电路10以及保护环11，如图5中示例性示出的。
图5示出了在底部处具有凸点接合部的解决方案，诸如可以利用晶圆级封装技术，结合硅通孔(TSV)以及背面重新分布层在实践中使用，以将接合焊盘连接到引线凸点。可以使用其他封装技术，诸如引线接合(类似于图7)或倒装芯片技术。吸收膜可以在晶圆处理期间或结束时、或者在芯片以其封装中组装期间沉积在晶圆上。
在电子器件2上布置可以由铝、铜、钨或其任何组合形成的屏蔽件22、特别是光屏蔽件。包含纳米材料的吸收膜23施加在屏蔽件22上或上方。屏蔽件22和吸收膜23尤其可以布置在电子器件2的上表面的局部区域上。图5示例性示出了布置在集成电路10上方的屏蔽件22和吸收膜23。屏蔽件22防止由吸收膜23的纳米材料发射的光影响集成电路10。
图6是具有包含纳米材料的吸收膜的另一抗辐射封装件的横截面。与根据图5的封装件的元件对应的根据图6的封装件的元件用相同的附图标记表示。在根据图6的封装件中，在BEOL层6中布置可以由铝、铜、钨或其任何组合形成的屏蔽件32、特别是光屏蔽件。屏蔽件32尤其可以由引线的金属化层形成。因此，屏蔽件32被嵌入在BEOL层6中。在屏蔽件32上方的BEOL层6上施加包含纳米材料的吸收膜33。屏蔽件32和吸收膜33尤其可以布置在晶体管17上方，该晶体管例如形成集成电路10的部件。屏蔽件32防止由吸收膜33的纳米材料发射的光影响晶体管17或集成电路10的其他部件。
图7是具有包含纳米材料的粘合层15、30的抗辐射封装件的组件的横截面。电子器件2和另一电子器件20安装在载体1的相对表面上。电子器件2、20中的每个可以特别是上述任何封装件。在图7的示例中，电子器件2包括集成电路14，并且另一电子器件20包括光电探测器19、29以及保护环21、24。电连接件包括焊盘7、27和到载体1中的互连件31的引线接合件8、28。特别地，电子器件2的端子和另一电子器件20的另外的端子因此可以互连，如图7示出的。根据单独的实施例和应用的需要，电连接可以与图7示出的示例不同。在图7示出的示例中，提供另一电子器件20的上表面用于辐射18的入射。
在根据图7的组件中，借助于包含纳米材料的粘合层15、30将电子器件2、20都安装到载体1。粘合层15、30能够包含相同的纳米材料或不同种类的纳米材料。
图8是具有包含纳米材料的粘合层和包含纳米材料的圆顶封装体的抗辐射封装件的组件的横截面。与根据图7的封装件的元件对应的根据图8的封装件的元件用相同的附图标记表示。在根据图8的封装件中，电子器件2由圆顶封装体覆盖，并且包含纳米材料的罩3施加在圆顶封装体上。根据上述封装件中的一些，罩3可以替代地是注塑成型罩，并且由罩3形成的空腔4可以留空。
借助于也可以包含纳米材料的粘合层15将电子器件2安装到载体1。借助于也可以包含纳米材料的另一粘合层30将另一电子器件20安装到载体1。粘合层15、30和罩3能够包含相同的纳米材料或不同种类的纳米材料。在根据图8的封装件中，另一电子器件20的基底25不在由电子器件2及其罩3形成的封装件上横向延伸。作为示例，在图8中仅示意性地表明了由载体1的焊盘7、27、引线接合件8、28以及互连件31形成的电连接，并且可以根据单独的实施例和应用的需要来变化。
所描述的封装件以低成本改善了对电子器件进行X射线辐射的屏蔽。通过半导体技术中本身已知的方法步骤、特别是从消费电子产品的制造中本身已知的方法步骤能够制造所述封装件。
附图标记列表
1 载体
2 电子器件
3 罩
4 空腔
5 基底
6 BEOL层
7 焊盘
8 引线接合件
9 光电探测器
10 集成电路
11 保护环
12 焊球
13 吸收膜
14 集成电路
15 粘合层
16 焊球
17 晶体管
18 辐射
19 光电探测器
20 电子器件
21 保护环
22 屏蔽件
23 吸收膜
24 保护环
25 基底
26 BEOL层
27 焊盘
28 引线接合件
29 光电探测器
30 粘合层
31 互连件
32 屏蔽件
33 吸收膜

Claims (6)

1.一种用于电子器件的封装件，包括：
载体(1)，
电子器件(2)，其布置在载体(1)上，所述电子器件(2)包括基底(5)以及包含引线的线后端层(6)，
屏蔽件(22、32)，其直接布置在所述线后端层(6)的背离载体(1)的一侧上，或者布置在所述线后端层(6)中，所述屏蔽件(22、32)是光屏蔽件(22、32)，以及
吸收膜(23、33)，其包含纳米材料，当所述屏蔽件(22)直接布置在所述线后端层(6)的背离所述载体(1)的一侧上时，所述吸收膜施加在所述屏蔽件(22)上，或者当所述屏蔽件(32)布置在所述线后端层(6)中时，所述吸收膜施加在所述线后端层(6)上在所述屏蔽件(32)上方。
2.根据权利要求1所述的封装件，其中，
所述屏蔽件(22、32)和吸收膜(23、33)仅布置在电子器件(2)的背离载体(1)的上表面的局部区域上。
3.根据权利要求2所述的封装件，还包括：
所述电子器件(2)的集成电路(10)，所述屏蔽件(22、32)和吸收膜(23、33)仅布置在集成电路(10)上方。
4.根据权利要求3所述的封装件，还包括：
形成集成电路(10)的部件的晶体管(17)，所述屏蔽件(22、32)和吸收膜(23、33)仅布置在晶体管(17)上方。
5.根据权利要求1所述的封装件，其中
所述屏蔽件(22、32)由铝、铜、钨或其组合形成。
6.根据权利要求1所述的封装件，其中，所述纳米材料包括选自以下的材料：PbS、PbSe、ZnS、ZnS、CdSe、CdTe、硫化铜、氧化铜、有机钙钛矿和无机钙钛矿、或其任何组合。
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