JP5281484B2 - 放射線検出ユニット - Google Patents
放射線検出ユニット Download PDFInfo
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- JP5281484B2 JP5281484B2 JP2009129084A JP2009129084A JP5281484B2 JP 5281484 B2 JP5281484 B2 JP 5281484B2 JP 2009129084 A JP2009129084 A JP 2009129084A JP 2009129084 A JP2009129084 A JP 2009129084A JP 5281484 B2 JP5281484 B2 JP 5281484B2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0232—Optical elements or arrangements associated with the device
- H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20182—Modular detectors, e.g. tiled scintillators or tiled photodiodes
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
- G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
- G01T1/16—Measuring radiation intensity
- G01T1/20—Measuring radiation intensity with scintillation detectors
- G01T1/2018—Scintillation-photodiode combinations
- G01T1/20188—Auxiliary details, e.g. casings or cooling
- G01T1/2019—Shielding against direct hits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14618—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14636—Interconnect structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14661—X-ray, gamma-ray or corpuscular radiation imagers of the hybrid type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
- H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
- H01L27/14663—Indirect radiation imagers, e.g. using luminescent members
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/02—Arrangements for diagnosis sequentially in different planes; Stereoscopic radiation diagnosis
- A61B6/03—Computed tomography [CT]
- A61B6/032—Transmission computed tomography [CT]
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B6/00—Apparatus or devices for radiation diagnosis; Apparatus or devices for radiation diagnosis combined with radiation therapy equipment
- A61B6/42—Arrangements for detecting radiation specially adapted for radiation diagnosis
- A61B6/4208—Arrangements for detecting radiation specially adapted for radiation diagnosis characterised by using a particular type of detector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- High Energy & Nuclear Physics (AREA)
- Molecular Biology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Toxicology (AREA)
- Measurement Of Radiation (AREA)
- Apparatus For Radiation Diagnosis (AREA)
- Solid State Image Pick-Up Elements (AREA)
Description
Claims (6)
- シンチレータに近接して配置され、前記シンチレータに対向する第1の面に沿って配列された複数の光電変換素子、及び、前記複数の光電変換素子に対応して前記第1の面の反対側の第2の面上に配列された信号出力用の複数の電極を含む光電変換部と、
前記複数の光電変換素子からの信号を処理する信号処理回路と、
前記光電変換部及び前記信号処理回路を搭載し、前記光電変換部の前記複数の電極と前記信号処理回路との間を電気的に接続するフレキシブル基板と、
前記フレキシブル基板を挟んで前記光電変換部の第2の面に対向して設けられ、前記第2の面に沿った方向の端部が前記光電変換部よりも内側に位置するように形成された放射線遮蔽板とを備え、
前記複数の電極は、前記第2の面上の配列ピッチが配線部材によって前記光電変換素子の配列ピッチよりも短くされており、
前記フレキシブル基板が、前記光電変換部の搭載領域と前記信号処理回路の搭載領域との間の中間領域において、前記放射線遮蔽板の前記端部に沿って折り曲げられることにより、前記信号処理回路が前記放射線遮蔽板を挟んで前記光電変換素子の反対側に配置される、
ことを特徴とする放射線検出ユニット。 - 前記光電変換部には、前記配線部材として、前記第2の面上に前記複数の電極の配列ピッチを変換するための多層配線部が設けられている、
ことを特徴とする請求項1記載の放射線検出ユニット。 - 前記フレキシブル基板の前記中間領域には、電磁シールド膜が形成されている、
ことを特徴とする請求項1又は2記載の放射線検出ユニット。 - 前記放射線遮蔽板の前記端部は、前記フレキシブル基板の前記中間領域に沿った角部に面取り加工が施されている、
ことを特徴とする請求項1〜3のいずれか1項に記載の放射線検出ユニット。 - 前記フレキシブル基板には、前記第2の面の中心線に対してほぼ対称な位置に2つの前記信号処理回路が搭載されており、前記2つの前記信号処理回路の搭載領域からほぼ等距離に位置するコネクタ部が接続されている、
ことを特徴とする請求項1〜4のいずれか1項記載の放射線検出ユニット。 - 前記フレキシブル基板は、前記中間領域の厚さが、前記光電変換部の前記搭載領域及び前記信号処理回路の前記搭載領域の厚さよりも薄く形成されている、
ことを特徴とする請求項1〜5のいずれか1項記載の放射線検出ユニット。
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129084A JP5281484B2 (ja) | 2009-05-28 | 2009-05-28 | 放射線検出ユニット |
EP10780353.8A EP2437296B1 (en) | 2009-05-28 | 2010-03-26 | Radiation detecting unit |
US13/322,314 US8866098B2 (en) | 2009-05-28 | 2010-03-26 | Radiation detecting unit |
CN201080022947.2A CN102449764B (zh) | 2009-05-28 | 2010-03-26 | 放射线检测单元 |
PCT/JP2010/055390 WO2010137396A1 (ja) | 2009-05-28 | 2010-03-26 | 放射線検出ユニット |
IL216657A IL216657A (en) | 2009-05-28 | 2011-11-28 | Radiation sensor unit |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009129084A JP5281484B2 (ja) | 2009-05-28 | 2009-05-28 | 放射線検出ユニット |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2010278220A JP2010278220A (ja) | 2010-12-09 |
JP5281484B2 true JP5281484B2 (ja) | 2013-09-04 |
Family
ID=43222519
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2009129084A Active JP5281484B2 (ja) | 2009-05-28 | 2009-05-28 | 放射線検出ユニット |
Country Status (6)
Country | Link |
---|---|
US (1) | US8866098B2 (ja) |
EP (1) | EP2437296B1 (ja) |
JP (1) | JP5281484B2 (ja) |
CN (1) | CN102449764B (ja) |
IL (1) | IL216657A (ja) |
WO (1) | WO2010137396A1 (ja) |
Families Citing this family (26)
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JP5358509B2 (ja) * | 2010-04-15 | 2013-12-04 | 浜松ホトニクス株式会社 | 放射線検出器モジュール |
JP5568004B2 (ja) * | 2010-12-27 | 2014-08-06 | 株式会社リガク | X線検出器 |
WO2012104775A2 (en) * | 2011-02-03 | 2012-08-09 | Koninklijke Philips Electronics N.V. | Single or multi-energy vertical radiation sensitive detectors |
US8913180B2 (en) | 2011-09-29 | 2014-12-16 | Flextronics Ap, Llc | Folded tape package for electronic devices |
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JP2015524056A (ja) * | 2012-05-22 | 2015-08-20 | アナロジック コーポレイション | 感知システムとディテクタアレイ連結アセンブリ{detectionsystemanddetectorarrayinterconnectassemblies} |
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US20140321601A1 (en) * | 2013-04-26 | 2014-10-30 | Texas Instruments Incorporated | Active shield for x-ray computed tomography machine |
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JP6650676B2 (ja) * | 2015-02-26 | 2020-02-19 | キヤノン株式会社 | 放射線撮像装置および放射線撮像システム |
CN107850678B (zh) | 2015-07-17 | 2021-05-18 | 模拟技术公司 | 用于辐射成像模态装置的探测器阵列的探测器单元 |
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US10868074B2 (en) * | 2016-07-14 | 2020-12-15 | Koninklijke Philips N.V. | Detector module, detector, imaging apparatus and method of manufacturing a detector module |
US11056455B2 (en) | 2017-08-01 | 2021-07-06 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
JP6893866B2 (ja) * | 2017-12-22 | 2021-06-23 | 富士フイルム株式会社 | 放射線検出装置 |
CN111919140B (zh) * | 2018-03-26 | 2024-04-16 | 富士胶片株式会社 | 放射线图像摄影装置 |
KR20210101238A (ko) | 2018-12-06 | 2021-08-18 | 아나로그 디바이시즈 인코포레이티드 | 패시브 디바이스 조립체가 포함된 통합 디바이스 패키지 |
US11194063B2 (en) * | 2019-12-30 | 2021-12-07 | Rayence Co., Ltd. | X-ray detector having driver micro integrated chips printed on photodiode layer |
US11664340B2 (en) | 2020-07-13 | 2023-05-30 | Analog Devices, Inc. | Negative fillet for mounting an integrated device die to a carrier |
WO2022026895A1 (en) * | 2020-07-31 | 2022-02-03 | Analog Devices, Inc. | Connector assembly for sensor device |
CN116735631B (zh) * | 2023-08-09 | 2024-02-23 | 同源微(北京)半导体技术有限公司 | 一种x射线成像检测单元、模块和装置 |
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2009
- 2009-05-28 JP JP2009129084A patent/JP5281484B2/ja active Active
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2010
- 2010-03-26 WO PCT/JP2010/055390 patent/WO2010137396A1/ja active Application Filing
- 2010-03-26 EP EP10780353.8A patent/EP2437296B1/en active Active
- 2010-03-26 CN CN201080022947.2A patent/CN102449764B/zh active Active
- 2010-03-26 US US13/322,314 patent/US8866098B2/en active Active
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2011
- 2011-11-28 IL IL216657A patent/IL216657A/en active IP Right Grant
Also Published As
Publication number | Publication date |
---|---|
EP2437296A4 (en) | 2014-03-19 |
EP2437296A1 (en) | 2012-04-04 |
CN102449764A (zh) | 2012-05-09 |
IL216657A (en) | 2015-10-29 |
IL216657A0 (en) | 2012-02-29 |
WO2010137396A1 (ja) | 2010-12-02 |
EP2437296B1 (en) | 2020-03-11 |
JP2010278220A (ja) | 2010-12-09 |
US20120097857A1 (en) | 2012-04-26 |
US8866098B2 (en) | 2014-10-21 |
CN102449764B (zh) | 2014-08-27 |
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