JP2012124466A - 半導体装置用接着フィルム、及び、半導体装置 - Google Patents
半導体装置用接着フィルム、及び、半導体装置 Download PDFInfo
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- JP2012124466A JP2012124466A JP2011228063A JP2011228063A JP2012124466A JP 2012124466 A JP2012124466 A JP 2012124466A JP 2011228063 A JP2011228063 A JP 2011228063A JP 2011228063 A JP2011228063 A JP 2011228063A JP 2012124466 A JP2012124466 A JP 2012124466A
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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Abstract
【解決手段】 接着剤層と、電磁波シールド層とを有する半導体装置用接着フィルムであって、半導体装置用接着フィルムを透過した電磁波の減衰量が、50MHz〜20GHzの範囲の周波数領域の少なくとも一部において、3dB以上である半導体装置用接着フィルム。
【選択図】 図1
Description
図1は、本発明の一実施形態に係るダイボンドフィルムを示す断面模式図であり、図2は、他の実施形態に係るダイボンドフィルムを示す断面模式図である。図1に示すように、ダイボンドフィルム40は、接着剤層30上に電磁波シールド層31が積層された構成を有する。また、本発明に係るダイボンドフィルムは、図2に示すダイボンドフィルム41のように、電磁波シールド層31上にさらに接着剤層32が積層された構成であってもよい。さらに、本発明に係るダイボンドフィルムは、接着剤層と電磁波シールド層とを有していれば、ダイボンドフィルム40、ダイボンドフィルム41に限定されず、例えば、接着剤層及び電磁波シールド層以外の他の層を有するものであってもよい。
また、前記エポキシ樹脂は、常温で固形のものと、常温で液体のものとの2種類を併用して用いることができる。常温で固形のエポキシ樹脂に対して、常温で液状のエポキシ樹脂を加えることにより、フィルムを形成した際の脆弱性を改善することができ、作業性を向上させることができる。
図3は、図2に示したダイボンドフィルムが積層されたダイシング・ダイボンドフィルムの一例を示す断面模式図である。図4は、図2に示したダイボンドフィルムが積層された他のダイシング・ダイボンドフィルムの一例を示す断面模式図である。
ダイボンドフィルム40、41の製造方法について、説明する。先ず、接着剤層30の形成材料である接着剤組成物溶液を作製する。当該接着剤組成物溶液には、前記接着剤組成物の他、必要に応じて、フィラーや各種の添加剤等が配合されていてもよい。
次に、ダイシング・ダイボンドフィルムの製造方法について、ダイシング・ダイボンドフィルム10を例にして説明する。先ず、基材1は、従来公知の製膜方法により製膜することができる。当該製膜方法としては、例えばカレンダー製膜法、有機溶媒中でのキャスティング法、密閉系でのインフレーション押出法、Tダイ押出法、共押出し法、ドライラミネート法等が例示できる。
本発明のダイシング・ダイボンドフィルム10、12は、ダイボンドフィルム41、41’上に任意に設けられたセパレータを適宜に剥離して、次の様に使用される。以下では、図5を参照しながらダイシング・ダイボンドフィルム10を用いた場合を例にして説明する。図5は、図3に示したダイシング・ダイボンドフィルムに於けるダイボンドフィルムを介して半導体チップを実装した例を示す断面模式図である。
<接着剤層Aの作製>
下記(a)〜(f)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)アクリル酸エチル−メチルメタクリレートを主成分とするアクリル酸エステル系ポリマー(根上工業(株)製、パラクロンW−197CM) 100部
(b)エポキシ樹脂1(JER(株)製、エピコート1004) 242部
(c)エポキシ樹脂2(JER(株)製、エピコート827) 220部
(d)フェノール樹脂(三井化学(株)製、ミレックスXLC−4L) 489部
(e)球状シリカ(アドマテックス(株)製、SO−25R) 660部
(f)熱硬化触媒(四国化成(株)製、C11−Z) 3部
下記(a)〜(d)をメチルエチルケトンに溶解させ、濃度23.6重量%の接着剤組成物溶液を得た。
(a)アクリル酸エステル系ポリマー(ナガセケムテック社製、SG−80H)100部
(b)エポキシ樹脂(DIC(株)製、HP−7200H) 10部
(c)フェノール樹脂(三井化学(株)製、ミレックスXLC−4L) 10部
(d)球状シリカ(アドマテックス(株)製、SO−25R) 63部
接着剤層Aと接着剤層Bとの間に、厚さが20μmのアルミ箔(東洋アルミ(株)社製)を、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ90μmの半導体装置用接着フィルムを作製した。なお、アルミ箔は、電磁波シールド層として機能を有する。
<半導体装置用接着フィルムの作製>
接着剤層Aと接着剤層Bとの間に、厚さが38μmのSUS304(ステンレス鋼)箔を、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ108μmの半導体装置用接着フィルムを作製した。なお、SUS304箔は、電磁波シールド層として機能を有する。
<半導体装置用接着フィルムの作製>
スパッタ装置(ULVAC社製、SH-550)を用い、接着剤層A上に、厚さ500nmのアルミニウム層をスパッタ法により形成した。スパッタ条件は、以下のようにした。
(スパッタ条件)
ターゲット: アルミニウム
放電出力:DC 600W (出力密度 3.4W/cm2)
系内圧力: 0.56 Pa
Ar流量: 40sccm
基板温度: 非加熱
成膜速度:20 nm/min
<半導体装置用接着フィルムの作製>
接着剤層Aと接着剤層Bとの間に、厚さが20μmのニッケル箔を、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ90μmの半導体装置用接着フィルムを作製した。なお、ニッケル箔は、電磁波シールド層として機能を有する。
<半導体装置用接着フィルムの作製>
接着剤層Aと接着剤層Bとの間に、厚さが12μmの銅箔を、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ82μmの半導体装置用接着フィルムを作製した。なお、銅箔は、電磁波シールド層として機能を有する。
<半導体装置用接着フィルムの作製>
厚さ50μmのPET(ポリエチレンテレフタレート)フィルムを両側に有する、厚さ18μmのfinemet層が形成されたフィルム(日立金属(株)社製、FP-FT-5M)(以下、「finemetフィルム」ともいう)を準備した。なお、finemet層は、Feを主成分にして、これにSi(シリコン)とB(ボロン)および微量のCu(銅)とNb(ニオブ)を添加した組成の高温融液を約100万℃/秒で急冷固化したアモルファス(非晶質)薄帯である。
次に、接着剤層Aと接着剤層Bとの間に、前記finemetフィルムを、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ188μmの半導体装置用接着フィルムを作製した。この際、接着剤層AとPETフィルムとが対向し、接着剤層Bとfinemet層とが対向するように貼り合わせた。なお、finemet層は、電磁波シールド層として機能を有する。
アルミ箔を用いなかったこと以外は、実施例1と同様にして接着剤層Aと接着剤層Bとを貼り合わせて、本比較例に係る半導体装置用接着フィルムを作製した。
<半導体装置用接着フィルムの作製>
厚さ38μmのPETフィルム上に、厚さ3μmのフェライト層が形成されたフィルムを準備した。比較例2に係るフェライト層は、フェライトめっき法で作成したNiZnフェライトからなる層である。
次に、接着剤層Aと接着剤層Bとの間に、前記フェライトフィルムを、80℃、貼り付け圧力0.3MPa、貼り付け速度10mm/秒の条件にて貼り合わせ、厚さ111μmの半導体装置用接着フィルムを作製した。この際、接着剤層AとPETフィルムとが対向し、接着剤層Bとフェライト層とが対向するように貼り合わせた。
実施例及び比較例に係る半導体装置用接着フィルムの電磁波減衰量(dB)を磁界プローブ法にて行った。具体的には、まず、スペクトラムアナライザー(Advantest製、R3172)を用いて、周波数13MHz〜3GHzのデジタル信号を特性インピーダンス50ΩのMSL線路に入力し、線路上1mmに発生する磁界強度(dB)を磁界プローブ(NECエンジニアリング製、CP-2S)を用いて測定した。次に、実施例及び比較例に係る半導体装置用接着フィルムをMSL線路上に置き、磁界強度(dB)を測定した。そして、MSL線路上に何も無い状態の測定値と、半導体装置用接着フィルムをMSL線路上に置いた状態の測定値とを比較し、その差を13MHz〜3GHzの範囲における電磁波減衰量(dB)とした。測定結果を表1に示す。また、表1に示した測定結果をグラフ化したものを図8〜図15に示す。図8〜図13は、それぞれ実施例1〜実施例6の測定結果を示すグラフであり、図14、図15は、それぞれ比較例1、比較例2の測定結果を示すグラフである。
2 粘着剤層
4 半導体ウエハ
5 半導体チップ
6 被着体
7 ボンディングワイヤー
8 封止樹脂
10、12 ダイシング・ダイボンドフィルム
11 ダイシングフィルム
15 半導体チップ
30、32 接着剤層
31 電磁波シールド層
40、41、41’ ダイボンドフィルム(半導体装置用接着フィルム)
44 フリップチップ型半導体裏面用フィルム(半導体装置用接着フィルム)
50 フリップチップ型半導体装置
Claims (4)
- 接着剤層と、電磁波シールド層とを有する半導体装置用接着フィルムであって、
前記半導体装置用接着フィルムを透過した電磁波の減衰量が、50MHz〜20GHzの範囲の周波数領域の少なくとも一部において、3dB以上であることを特徴とする半導体装置用接着フィルム。 - 被着体と半導体素子とを有する半導体装置であって、
請求項1に記載の半導体装置用接着フィルムが、前記被着体と前記半導体素子との間に設けられていることを特徴とする半導体装置。 - 2以上の半導体素子を有する半導体装置であって、
請求項1に記載の半導体装置用接着フィルムが、1の半導体素子と他の半導体素子との間に設けられていることを特徴とする半導体装置。 - 被着体上に半導体素子がフリップチップ接続された半導体装置であって、
請求項1に記載の半導体装置用接着フィルムが、前記半導体素子上に設けられていることを特徴とする半導体装置。
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CN102569263A (zh) | 2012-07-11 |
CN103996672A (zh) | 2014-08-20 |
CN102569263B (zh) | 2016-01-20 |
TW201226521A (en) | 2012-07-01 |
KR20120053967A (ko) | 2012-05-29 |
US20120126381A1 (en) | 2012-05-24 |
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