|
FR93097E
(fr)
|
1965-10-11 |
1969-02-07 |
Ibm |
Procédé de dépot de films isolants et dispositifs électriques utilisant de tels films.
|
|
US4158717A
(en)
|
1977-02-14 |
1979-06-19 |
Varian Associates, Inc. |
Silicon nitride film and method of deposition
|
|
US4419809A
(en)
|
1981-12-30 |
1983-12-13 |
International Business Machines Corporation |
Fabrication process of sub-micrometer channel length MOSFETs
|
|
US4500563A
(en)
|
1982-12-15 |
1985-02-19 |
Pacific Western Systems, Inc. |
Independently variably controlled pulsed R.F. plasma chemical vapor processing
|
|
US4575921A
(en)
|
1983-11-04 |
1986-03-18 |
General Motors Corporation |
Silicon nitride formation and use in self-aligned semiconductor device manufacturing method
|
|
CA1327338C
(en)
|
1987-02-02 |
1994-03-01 |
Chorng-Ping Chang |
Process for producing devices containing silicon nitride films
|
|
EP0313683A1
(en)
|
1987-10-30 |
1989-05-03 |
International Business Machines Corporation |
Method for fabricating a semiconductor integrated circuit structure having a submicrometer length device element
|
|
US5420067A
(en)
|
1990-09-28 |
1995-05-30 |
The United States Of America As Represented By The Secretary Of The Navy |
Method of fabricatring sub-half-micron trenches and holes
|
|
US5091332A
(en)
|
1990-11-19 |
1992-02-25 |
Intel Corporation |
Semiconductor field oxidation process
|
|
US5314724A
(en)
|
1991-01-08 |
1994-05-24 |
Fujitsu Limited |
Process for forming silicon oxide film
|
|
US5202272A
(en)
|
1991-03-25 |
1993-04-13 |
International Business Machines Corporation |
Field effect transistor formed with deep-submicron gate
|
|
US5230929A
(en)
|
1992-07-20 |
1993-07-27 |
Dow Corning Corporation |
Plasma-activated chemical vapor deposition of fluoridated cyclic siloxanes
|
|
US5496608A
(en)
|
1993-09-22 |
1996-03-05 |
Brother Kogyo Kabushiki Kaisha |
Optical recording medium
|
|
US5528719A
(en)
|
1993-10-26 |
1996-06-18 |
Sumitomo Metal Mining Company Limited |
Optical fiber guide structure and method of fabricating same
|
|
US6342277B1
(en)
|
1996-08-16 |
2002-01-29 |
Licensee For Microelectronics: Asm America, Inc. |
Sequential chemical vapor deposition
|
|
US5670432A
(en)
|
1996-08-01 |
1997-09-23 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Thermal treatment to form a void free aluminum metal layer for a semiconductor device
|
|
US5731235A
(en)
|
1996-10-30 |
1998-03-24 |
Micron Technology, Inc. |
Methods of forming a silicon nitrite film, a capacitor dielectric layer and a capacitor
|
|
US5891805A
(en)
|
1996-12-13 |
1999-04-06 |
Intel Corporation |
Method of forming contacts
|
|
US6039834A
(en)
|
1997-03-05 |
2000-03-21 |
Applied Materials, Inc. |
Apparatus and methods for upgraded substrate processing system with microwave plasma source
|
|
US6153519A
(en)
|
1997-03-31 |
2000-11-28 |
Motorola, Inc. |
Method of forming a barrier layer
|
|
US6225175B1
(en)
|
1997-06-20 |
2001-05-01 |
Texas Instruments Incorporated |
Process for defining ultra-thin geometries
|
|
US5854105A
(en)
|
1997-11-05 |
1998-12-29 |
Vanguard International Semiconductor Corporation |
Method for making dynamic random access memory cells having double-crown stacked capacitors with center posts
|
|
US5856003A
(en)
|
1997-11-17 |
1999-01-05 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Method for forming pseudo buried layer for sub-micron bipolar or BiCMOS device
|
|
US5976990A
(en)
|
1998-01-09 |
1999-11-02 |
Micron Technology, Inc. |
Method for optimization of thin film deposition
|
|
US6380056B1
(en)
|
1998-10-23 |
2002-04-30 |
Taiwan Semiconductor Manufacturing Company |
Lightly nitridation surface for preparing thin-gate oxides
|
|
US6197701B1
(en)
|
1998-10-23 |
2001-03-06 |
Taiwan Semiconductor Manufacturing Company |
Lightly nitridation surface for preparing thin-gate oxides
|
|
US6228779B1
(en)
|
1998-11-06 |
2001-05-08 |
Novellus Systems, Inc. |
Ultra thin oxynitride and nitride/oxide stacked gate dielectrics fabricated by high pressure technology
|
|
US6403416B1
(en)
|
1999-01-07 |
2002-06-11 |
Taiwan Semiconductor Manufacturing Company |
Method for making a double-cylinder-capacitor structure for dynamic random access memory (DRAM)
|
|
KR100273473B1
(ko)
|
1999-04-06 |
2000-11-15 |
이경수 |
박막 형성 방법
|
|
KR100340716B1
(ko)
|
1999-10-29 |
2002-06-20 |
윤종용 |
실리콘 질화막 형성방법
|
|
CA2387341A1
(en)
|
1999-11-02 |
2001-05-10 |
Tokyo Electron Limited |
Method and apparatus for supercritical processing of multiple workpieces
|
|
KR100338125B1
(ko)
|
1999-12-31 |
2002-05-24 |
구본준, 론 위라하디락사 |
박막 트랜지스터 및 그 제조방법
|
|
EP1266054B1
(en)
|
2000-03-07 |
2006-12-20 |
Asm International N.V. |
Graded thin films
|
|
AU2001255656A1
(en)
|
2000-04-25 |
2001-11-07 |
Tokyo Electron Limited |
Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module
|
|
KR100366621B1
(ko)
|
2000-06-28 |
2003-01-09 |
삼성전자 주식회사 |
반도체 소자의 도전성 콘택체를 형성하는 방법
|
|
US6632741B1
(en)
*
|
2000-07-19 |
2003-10-14 |
International Business Machines Corporation |
Self-trimming method on looped patterns
|
|
US6548368B1
(en)
|
2000-08-23 |
2003-04-15 |
Applied Materials, Inc. |
Method of forming a MIS capacitor
|
|
US6416822B1
(en)
|
2000-12-06 |
2002-07-09 |
Angstrom Systems, Inc. |
Continuous method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
|
US6428859B1
(en)
|
2000-12-06 |
2002-08-06 |
Angstron Systems, Inc. |
Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
|
|
US6632478B2
(en)
|
2001-02-22 |
2003-10-14 |
Applied Materials, Inc. |
Process for forming a low dielectric constant carbon-containing film
|
|
JP3696119B2
(ja)
|
2001-04-26 |
2005-09-14 |
株式会社日立製作所 |
半導体装置、及び半導体装置の製造方法
|
|
US6709928B1
(en)
|
2001-07-31 |
2004-03-23 |
Cypress Semiconductor Corporation |
Semiconductor device having silicon-rich layer and method of manufacturing such a device
|
|
JP4116283B2
(ja)
|
2001-11-30 |
2008-07-09 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
ヘキサキス（モノヒドロカルビルアミノ）ジシランおよびその製造方法
|
|
US6638879B2
(en)
|
2001-12-06 |
2003-10-28 |
Macronix International Co., Ltd. |
Method for forming nitride spacer by using atomic layer deposition
|
|
US6911391B2
(en)
|
2002-01-26 |
2005-06-28 |
Applied Materials, Inc. |
Integration of titanium and titanium nitride layers
|
|
KR20030081144A
(ko)
|
2002-04-11 |
2003-10-17 |
가부시키가이샤 히다치 고쿠사이 덴키 |
종형 반도체 제조 장치
|
|
US6518167B1
(en)
|
2002-04-16 |
2003-02-11 |
Advanced Micro Devices, Inc. |
Method of forming a metal or metal nitride interface layer between silicon nitride and copper
|
|
US7041335B2
(en)
|
2002-06-04 |
2006-05-09 |
Applied Materials, Inc. |
Titanium tantalum nitride silicide layer
|
|
KR100469126B1
(ko)
|
2002-06-05 |
2005-01-29 |
삼성전자주식회사 |
수소 함유량이 적은 박막 형성방법
|
|
JP5005170B2
(ja)
|
2002-07-19 |
2012-08-22 |
エーエスエム アメリカ インコーポレイテッド |
超高品質シリコン含有化合物層の形成方法
|
|
US7294582B2
(en)
|
2002-07-19 |
2007-11-13 |
Asm International, N.V. |
Low temperature silicon compound deposition
|
|
US6794284B2
(en)
|
2002-08-28 |
2004-09-21 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using disilazanes
|
|
US6967159B2
(en)
|
2002-08-28 |
2005-11-22 |
Micron Technology, Inc. |
Systems and methods for forming refractory metal nitride layers using organic amines
|
|
US20070212850A1
(en)
*
|
2002-09-19 |
2007-09-13 |
Applied Materials, Inc. |
Gap-fill depositions in the formation of silicon containing dielectric materials
|
|
JP4358492B2
(ja)
|
2002-09-25 |
2009-11-04 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
熱化学気相成長法によるシリコン窒化物膜またはシリコンオキシ窒化物膜の製造方法
|
|
US7531679B2
(en)
|
2002-11-14 |
2009-05-12 |
Advanced Technology Materials, Inc. |
Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride
|
|
KR100496265B1
(ko)
|
2002-11-29 |
2005-06-17 |
한국전자통신연구원 |
반도체 소자의 박막 형성방법
|
|
CN100567564C
(zh)
|
2002-12-20 |
2009-12-09 |
应用材料有限公司 |
形成高质量的低温氮化硅层的方法和设备
|
|
US7172792B2
(en)
|
2002-12-20 |
2007-02-06 |
Applied Materials, Inc. |
Method for forming a high quality low temperature silicon nitride film
|
|
US7713592B2
(en)
|
2003-02-04 |
2010-05-11 |
Tegal Corporation |
Nanolayer deposition process
|
|
JP4329403B2
(ja)
|
2003-05-19 |
2009-09-09 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
US7125582B2
(en)
|
2003-07-30 |
2006-10-24 |
Intel Corporation |
Low-temperature silicon nitride deposition
|
|
DE10335099B4
(de)
|
2003-07-31 |
2006-06-08 |
Advanced Micro Devices, Inc., Sunnyvale |
Verfahren zum Verbessern der Dickengleichförmigkeit von Siliziumnitridschichten für mehrere Halbleiterscheiben
|
|
US6943097B2
(en)
|
2003-08-19 |
2005-09-13 |
International Business Machines Corporation |
Atomic layer deposition of metallic contacts, gates and diffusion barriers
|
|
US20050227017A1
(en)
|
2003-10-31 |
2005-10-13 |
Yoshihide Senzaki |
Low temperature deposition of silicon nitride
|
|
US20050109276A1
(en)
|
2003-11-25 |
2005-05-26 |
Applied Materials, Inc. |
Thermal chemical vapor deposition of silicon nitride using BTBAS bis(tertiary-butylamino silane) in a single wafer chamber
|
|
US7291271B2
(en)
|
2003-12-09 |
2007-11-06 |
Separation Design Group, Llc |
Meso-frequency traveling wave electro-kinetic continuous adsorption system
|
|
KR100583105B1
(ko)
*
|
2003-12-24 |
2006-05-23 |
주식회사 하이닉스반도체 |
반도체 소자의 화학적 기계적 연마 공정의 종말점 검출 방법
|
|
JP2005210076A
(ja)
|
2003-12-25 |
2005-08-04 |
Semiconductor Leading Edge Technologies Inc |
窒化珪素膜の成膜方法及びこの方法を使用する半導体装置の製造方法
|
|
KR100560654B1
(ko)
|
2004-01-08 |
2006-03-16 |
삼성전자주식회사 |
질화실리콘막을 형성을 위한 질소화합물 및 이를 이용한질화실리콘 막의 형성방법
|
|
US20050170104A1
(en)
|
2004-01-29 |
2005-08-04 |
Applied Materials, Inc. |
Stress-tuned, single-layer silicon nitride film
|
|
JP4279176B2
(ja)
|
2004-03-02 |
2009-06-17 |
株式会社アルバック |
シリコン窒化膜の形成方法
|
|
US7585396B2
(en)
|
2004-06-25 |
2009-09-08 |
Guardian Industries Corp. |
Coated article with ion treated overcoat layer and corresponding method
|
|
US7550067B2
(en)
|
2004-06-25 |
2009-06-23 |
Guardian Industries Corp. |
Coated article with ion treated underlayer and corresponding method
|
|
JP4396547B2
(ja)
|
2004-06-28 |
2010-01-13 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
JP4595702B2
(ja)
|
2004-07-15 |
2010-12-08 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
JP4179311B2
(ja)
|
2004-07-28 |
2008-11-12 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
JP4470023B2
(ja)
|
2004-08-20 |
2010-06-02 |
レール・リキード−ソシエテ・アノニム・プール・レテュード・エ・レクスプロワタシオン・デ・プロセデ・ジョルジュ・クロード |
シリコン窒化物膜の製造方法
|
|
US7271464B2
(en)
|
2004-08-24 |
2007-09-18 |
Micron Technology, Inc. |
Liner for shallow trench isolation
|
|
US7629270B2
(en)
|
2004-08-27 |
2009-12-08 |
Asm America, Inc. |
Remote plasma activated nitridation
|
|
US7910288B2
(en)
|
2004-09-01 |
2011-03-22 |
Micron Technology, Inc. |
Mask material conversion
|
|
US20060084283A1
(en)
|
2004-10-20 |
2006-04-20 |
Paranjpe Ajit P |
Low temperature sin deposition methods
|
|
JP4701691B2
(ja)
|
2004-11-29 |
2011-06-15 |
東京エレクトロン株式会社 |
エッチング方法
|
|
US7429820B2
(en)
*
|
2004-12-07 |
2008-09-30 |
Motorola, Inc. |
Field emission display with electron trajectory field shaping
|
|
US7482247B1
(en)
|
2004-12-30 |
2009-01-27 |
Novellus Systems, Inc. |
Conformal nanolaminate dielectric deposition and etch bag gap fill process
|
|
US20060162661A1
(en)
|
2005-01-22 |
2006-07-27 |
Applied Materials, Inc. |
Mixing energized and non-energized gases for silicon nitride deposition
|
|
KR100622609B1
(ko)
|
2005-02-16 |
2006-09-19 |
주식회사 하이닉스반도체 |
박막 형성 방법
|
|
US7629267B2
(en)
|
2005-03-07 |
2009-12-08 |
Asm International N.V. |
High stress nitride film and method for formation thereof
|
|
JP4258518B2
(ja)
|
2005-03-09 |
2009-04-30 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
JP4506677B2
(ja)
|
2005-03-11 |
2010-07-21 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
JP2006261434A
(ja)
|
2005-03-17 |
2006-09-28 |
L'air Liquide Sa Pour L'etude & L'exploitation Des Procede S Georges Claude |
シリコン酸化膜の形成方法
|
|
JP4607637B2
(ja)
|
2005-03-28 |
2011-01-05 |
東京エレクトロン株式会社 |
シリコン窒化膜の形成方法、シリコン窒化膜の形成装置及びプログラム
|
|
US7875556B2
(en)
|
2005-05-16 |
2011-01-25 |
Air Products And Chemicals, Inc. |
Precursors for CVD silicon carbo-nitride and silicon nitride films
|
|
US7429536B2
(en)
*
|
2005-05-23 |
2008-09-30 |
Micron Technology, Inc. |
Methods for forming arrays of small, closely spaced features
|
|
US7560390B2
(en)
*
|
2005-06-02 |
2009-07-14 |
Micron Technology, Inc. |
Multiple spacer steps for pitch multiplication
|
|
US7651955B2
(en)
|
2005-06-21 |
2010-01-26 |
Applied Materials, Inc. |
Method for forming silicon-containing materials during a photoexcitation deposition process
|
|
US7700492B2
(en)
|
2005-06-22 |
2010-04-20 |
Tokyo Electron Limited |
Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
|
|
JP4305427B2
(ja)
|
2005-08-02 |
2009-07-29 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
US7696101B2
(en)
*
|
2005-11-01 |
2010-04-13 |
Micron Technology, Inc. |
Process for increasing feature density during the manufacture of a semiconductor device
|
|
US7465669B2
(en)
|
2005-11-12 |
2008-12-16 |
Applied Materials, Inc. |
Method of fabricating a silicon nitride stack
|
|
KR100714305B1
(ko)
*
|
2005-12-26 |
2007-05-02 |
삼성전자주식회사 |
자기정렬 이중패턴의 형성방법
|
|
US7301210B2
(en)
|
2006-01-12 |
2007-11-27 |
International Business Machines Corporation |
Method and structure to process thick and thin fins and variable fin to fin spacing
|
|
JP4434149B2
(ja)
|
2006-01-16 |
2010-03-17 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
US7491630B2
(en)
|
2006-03-15 |
2009-02-17 |
Freescale Semiconductor, Inc. |
Undoped gate poly integration for improved gate patterning and cobalt silicide extendibility
|
|
JP4929811B2
(ja)
|
2006-04-05 |
2012-05-09 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
JP2007281181A
(ja)
|
2006-04-06 |
2007-10-25 |
Elpida Memory Inc |
半導体装置の製造方法
|
|
US7902074B2
(en)
|
2006-04-07 |
2011-03-08 |
Micron Technology, Inc. |
Simplified pitch doubling process flow
|
|
FR2900276B1
(fr)
|
2006-04-25 |
2008-09-12 |
St Microelectronics Sa |
Depot peald d'un materiau a base de silicium
|
|
US8232176B2
(en)
|
2006-06-22 |
2012-07-31 |
Applied Materials, Inc. |
Dielectric deposition and etch back processes for bottom up gapfill
|
|
US7611980B2
(en)
|
2006-08-30 |
2009-11-03 |
Micron Technology, Inc. |
Single spacer process for multiplying pitch by a factor greater than two and related intermediate IC structures
|
|
JP4929932B2
(ja)
|
2006-09-01 |
2012-05-09 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
WO2008035678A1
(en)
|
2006-09-19 |
2008-03-27 |
Tokyo Electron Limited |
Plasma cleaning process and plasma cvd method
|
|
US7939455B2
(en)
|
2006-09-29 |
2011-05-10 |
Tokyo Electron Limited |
Method for forming strained silicon nitride films and a device containing such films
|
|
US20080139003A1
(en)
|
2006-10-26 |
2008-06-12 |
Shahid Pirzada |
Barrier coating deposition for thin film devices using plasma enhanced chemical vapor deposition process
|
|
US20080119057A1
(en)
|
2006-11-20 |
2008-05-22 |
Applied Materials,Inc. |
Method of clustering sequential processing for a gate stack structure
|
|
US20080124946A1
(en)
|
2006-11-28 |
2008-05-29 |
Air Products And Chemicals, Inc. |
Organosilane compounds for modifying dielectrical properties of silicon oxide and silicon nitride films
|
|
US20080213479A1
(en)
|
2007-02-16 |
2008-09-04 |
Tokyo Electron Limited |
SiCN film formation method and apparatus
|
|
US20080207007A1
(en)
|
2007-02-27 |
2008-08-28 |
Air Products And Chemicals, Inc. |
Plasma Enhanced Cyclic Chemical Vapor Deposition of Silicon-Containing Films
|
|
US7488659B2
(en)
|
2007-03-28 |
2009-02-10 |
International Business Machines Corporation |
Structure and methods for stress concentrating spacer
|
|
US20080242032A1
(en)
|
2007-03-29 |
2008-10-02 |
Texas Instruments Incorporated |
Carbon-Doped Epitaxial SiGe
|
|
US7651961B2
(en)
|
2007-03-30 |
2010-01-26 |
Tokyo Electron Limited |
Method for forming strained silicon nitride films and a device containing such films
|
|
US7807578B2
(en)
|
2007-06-01 |
2010-10-05 |
Applied Materials, Inc. |
Frequency doubling using spacer mask
|
|
US7923373B2
(en)
*
|
2007-06-04 |
2011-04-12 |
Micron Technology, Inc. |
Pitch multiplication using self-assembling materials
|
|
JP5151260B2
(ja)
|
2007-06-11 |
2013-02-27 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
KR100956210B1
(ko)
|
2007-06-19 |
2010-05-04 |
에어 프로덕츠 앤드 케미칼스, 인코오포레이티드 |
금속 실리콘 질화물 박막의 플라즈마 강화 사이클릭증착방법
|
|
US7910497B2
(en)
|
2007-07-30 |
2011-03-22 |
Applied Materials, Inc. |
Method of forming dielectric layers on a substrate and apparatus therefor
|
|
JP5098882B2
(ja)
|
2007-08-31 |
2012-12-12 |
東京エレクトロン株式会社 |
プラズマ処理装置
|
|
KR20150036815A
(ko)
|
2007-09-18 |
2015-04-07 |
레르 리키드 쏘시에떼 아노님 뿌르 레뜌드 에렉스뿔라따시옹 데 프로세데 조르즈 클로드 |
규소 함유 막의 형성 방법
|
|
US7651959B2
(en)
|
2007-12-03 |
2010-01-26 |
Asm Japan K.K. |
Method for forming silazane-based dielectric film
|
|
US8440569B2
(en)
|
2007-12-07 |
2013-05-14 |
Cadence Design Systems, Inc. |
Method of eliminating a lithography operation
|
|
US20090155606A1
(en)
|
2007-12-13 |
2009-06-18 |
Asm Genitech Korea Ltd. |
Methods of depositing a silicon nitride film
|
|
US7678715B2
(en)
|
2007-12-21 |
2010-03-16 |
Applied Materials, Inc. |
Low wet etch rate silicon nitride film
|
|
JP4935684B2
(ja)
|
2008-01-12 |
2012-05-23 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
JP4935687B2
(ja)
|
2008-01-19 |
2012-05-23 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
JP5297048B2
(ja)
|
2008-01-28 |
2013-09-25 |
三菱重工業株式会社 |
プラズマ処理方法及びプラズマ処理装置
|
|
JP2009260151A
(ja)
|
2008-04-18 |
2009-11-05 |
Tokyo Electron Ltd |
金属ドープ層の形成方法、成膜装置及び記憶媒体
|
|
US8383525B2
(en)
|
2008-04-25 |
2013-02-26 |
Asm America, Inc. |
Plasma-enhanced deposition process for forming a metal oxide thin film and related structures
|
|
US8133797B2
(en)
|
2008-05-16 |
2012-03-13 |
Novellus Systems, Inc. |
Protective layer to enable damage free gap fill
|
|
US7622369B1
(en)
|
2008-05-30 |
2009-11-24 |
Asm Japan K.K. |
Device isolation technology on semiconductor substrate
|
|
US8298628B2
(en)
|
2008-06-02 |
2012-10-30 |
Air Products And Chemicals, Inc. |
Low temperature deposition of silicon-containing films
|
|
JP5190307B2
(ja)
|
2008-06-29 |
2013-04-24 |
東京エレクトロン株式会社 |
成膜方法、成膜装置及び記憶媒体
|
|
US8076208B2
(en)
|
2008-07-03 |
2011-12-13 |
Micron Technology, Inc. |
Method for forming transistor with high breakdown voltage using pitch multiplication technique
|
|
JP5233562B2
(ja)
|
2008-10-04 |
2013-07-10 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
US7745346B2
(en)
|
2008-10-17 |
2010-06-29 |
Novellus Systems, Inc. |
Method for improving process control and film conformality of PECVD film
|
|
JP2010103303A
(ja)
|
2008-10-23 |
2010-05-06 |
Toshiba Corp |
磁気抵抗素子及びその製造方法
|
|
US10378106B2
(en)
|
2008-11-14 |
2019-08-13 |
Asm Ip Holding B.V. |
Method of forming insulation film by modified PEALD
|
|
US8647722B2
(en)
|
2008-11-14 |
2014-02-11 |
Asm Japan K.K. |
Method of forming insulation film using plasma treatment cycles
|
|
US20100136313A1
(en)
|
2008-12-01 |
2010-06-03 |
Asm Japan K.K. |
Process for forming high resistivity thin metallic film
|
|
US7833906B2
(en)
|
2008-12-11 |
2010-11-16 |
Asm International N.V. |
Titanium silicon nitride deposition
|
|
US9640396B2
(en)
|
2009-01-07 |
2017-05-02 |
Brewer Science Inc. |
Spin-on spacer materials for double- and triple-patterning lithography
|
|
US7972980B2
(en)
|
2009-01-21 |
2011-07-05 |
Asm Japan K.K. |
Method of forming conformal dielectric film having Si-N bonds by PECVD
|
|
US7919416B2
(en)
|
2009-01-21 |
2011-04-05 |
Asm Japan K.K. |
Method of forming conformal dielectric film having Si-N bonds by PECVD
|
|
US8268727B2
(en)
*
|
2009-04-20 |
2012-09-18 |
GlobalFoundries, Inc. |
Methods for fabricating FinFET semiconductor devices using planarized spacers
|
|
WO2010151856A2
(en)
|
2009-06-26 |
2010-12-29 |
Cornell University |
Chemical vapor deposition process for aluminum silicon nitride
|
|
KR20110002208A
(ko)
|
2009-07-01 |
2011-01-07 |
삼성전자주식회사 |
반도체 소자의 형성방법
|
|
JP2011023718A
(ja)
|
2009-07-15 |
2011-02-03 |
Asm Japan Kk |
ＰＥＡＬＤによってＳｉ−Ｎ結合を有するストレス調節された誘電体膜を形成する方法
|
|
US8105901B2
(en)
|
2009-07-27 |
2012-01-31 |
International Business Machines Corporation |
Method for double pattern density
|
|
US7989365B2
(en)
|
2009-08-18 |
2011-08-02 |
Applied Materials, Inc. |
Remote plasma source seasoning
|
|
US8173554B2
(en)
|
2009-10-14 |
2012-05-08 |
Asm Japan K.K. |
Method of depositing dielectric film having Si-N bonds by modified peald method
|
|
US8354331B2
(en)
|
2009-12-01 |
2013-01-15 |
International Business Machines Corporation |
Multiplying pattern density by single sidewall imaging transfer
|
|
US8021949B2
(en)
|
2009-12-01 |
2011-09-20 |
International Business Machines Corporation |
Method and structure for forming finFETs with multiple doping regions on a same chip
|
|
WO2011087698A2
(en)
|
2009-12-22 |
2011-07-21 |
Applied Materials, Inc. |
Pecvd multi-step processing with continuous plasma
|
|
JP2011192776A
(ja)
|
2010-03-15 |
2011-09-29 |
Toshiba Corp |
半導体装置の製造方法
|
|
JP5742185B2
(ja)
|
2010-03-19 |
2015-07-01 |
東京エレクトロン株式会社 |
成膜装置、成膜方法、回転数の最適化方法及び記憶媒体
|
|
US20110244142A1
(en)
|
2010-03-30 |
2011-10-06 |
Applied Materials, Inc. |
Nitrogen doped amorphous carbon hardmask
|
|
EP2553141A4
(en)
|
2010-04-01 |
2013-08-21 |
Air Liquide |
DEPOSITION OF FILMS CONTAINING METAL NITRIDES USING A COMBINATION OF AMINOUS AND HALOGENATED METAL PRECURSORS
|
|
US9390909B2
(en)
|
2013-11-07 |
2016-07-12 |
Novellus Systems, Inc. |
Soft landing nanolaminates for advanced patterning
|
|
US9892917B2
(en)
|
2010-04-15 |
2018-02-13 |
Lam Research Corporation |
Plasma assisted atomic layer deposition of multi-layer films for patterning applications
|
|
US9611544B2
(en)
|
2010-04-15 |
2017-04-04 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
|
US9076646B2
(en)
|
2010-04-15 |
2015-07-07 |
Lam Research Corporation |
Plasma enhanced atomic layer deposition with pulsed plasma exposure
|
|
US8728956B2
(en)
|
2010-04-15 |
2014-05-20 |
Novellus Systems, Inc. |
Plasma activated conformal film deposition
|
|
US8637411B2
(en)
|
2010-04-15 |
2014-01-28 |
Novellus Systems, Inc. |
Plasma activated conformal dielectric film deposition
|
|
US8993460B2
(en)
|
2013-01-10 |
2015-03-31 |
Novellus Systems, Inc. |
Apparatuses and methods for depositing SiC/SiCN films via cross-metathesis reactions with organometallic co-reactants
|
|
US8669185B2
(en)
|
2010-07-30 |
2014-03-11 |
Asm Japan K.K. |
Method of tailoring conformality of Si-containing film
|
|
KR101147728B1
(ko)
|
2010-08-02 |
2012-05-25 |
주식회사 유진테크 |
사이클릭 박막 증착 방법
|
|
US8394466B2
(en)
|
2010-09-03 |
2013-03-12 |
Asm Japan K.K. |
Method of forming conformal film having si-N bonds on high-aspect ratio pattern
|
|
US8138097B1
(en)
*
|
2010-09-20 |
2012-03-20 |
Kabushiki Kaisha Toshiba |
Method for processing semiconductor structure and device based on the same
|
|
US9685320B2
(en)
|
2010-09-23 |
2017-06-20 |
Lam Research Corporation |
Methods for depositing silicon oxide
|
|
WO2012039833A2
(en)
|
2010-09-24 |
2012-03-29 |
Applied Materials, Inc. |
Low temperature silicon carbide deposition process
|
|
US20120213940A1
(en)
|
2010-10-04 |
2012-08-23 |
Applied Materials, Inc. |
Atomic layer deposition of silicon nitride using dual-source precursor and interleaved plasma
|
|
US20120108079A1
(en)
|
2010-10-29 |
2012-05-03 |
Applied Materials, Inc. |
Atomic Layer Deposition Film With Tunable Refractive Index And Absorption Coefficient And Methods Of Making
|
|
US8679914B2
(en)
|
2010-11-02 |
2014-03-25 |
Micron Technology, Inc. |
Method of forming a chalcogenide material and methods of forming a resistive random access memory device including a chalcogenide material
|
|
US8288083B2
(en)
*
|
2010-11-05 |
2012-10-16 |
Micron Technology, Inc. |
Methods of forming patterned masks
|
|
KR20120062385A
(ko)
|
2010-12-06 |
2012-06-14 |
에스케이하이닉스 주식회사 |
반도체 메모리 소자의 형성방법
|
|
KR101225601B1
(ko)
|
2010-12-16 |
2013-01-24 |
한국과학기술원 |
대면적 나노스케일 패턴형성방법
|
|
JP5682290B2
(ja)
|
2010-12-20 |
2015-03-11 |
東京エレクトロン株式会社 |
炭素含有薄膜のスリミング方法及び酸化装置
|
|
JP5689398B2
(ja)
|
2010-12-21 |
2015-03-25 |
東京エレクトロン株式会社 |
窒化シリコン膜の成膜方法及び成膜装置
|
|
US8901016B2
(en)
|
2010-12-28 |
2014-12-02 |
Asm Japan K.K. |
Method of forming metal oxide hardmask
|
|
KR101172272B1
(ko)
*
|
2010-12-30 |
2012-08-09 |
에스케이하이닉스 주식회사 |
매립비트라인을 구비한 반도체장치 제조 방법
|
|
US8883649B2
(en)
*
|
2011-03-23 |
2014-11-11 |
International Business Machines Corporation |
Sidewall image transfer process
|
|
JP5919371B2
(ja)
|
2011-04-07 |
2016-05-18 |
ピコサン オーワイＰｉｃｏｓｕｎ Ｏｙ |
プラズマ源による原子層堆積
|
|
US8298951B1
(en)
|
2011-04-13 |
2012-10-30 |
Asm Japan K.K. |
Footing reduction using etch-selective layer
|
|
US8298954B1
(en)
|
2011-05-06 |
2012-10-30 |
International Business Machines Corporation |
Sidewall image transfer process employing a cap material layer for a metal nitride layer
|
|
TW201319299A
(zh)
|
2011-09-13 |
2013-05-16 |
Applied Materials Inc |
用於低溫電漿輔助沉積的活化矽前驅物
|
|
KR102084901B1
(ko)
|
2011-09-23 |
2020-03-05 |
노벨러스 시스템즈, 인코포레이티드 |
플라즈마 활성화된 컨포멀 유전체 막 증착
|
|
US8809169B2
(en)
*
|
2011-09-30 |
2014-08-19 |
Tokyo Electron Limited |
Multi-layer pattern for alternate ALD processes
|
|
US20130115778A1
(en)
|
2011-11-04 |
2013-05-09 |
Applied Materials, Inc. |
Dry Etch Processes
|
|
US9318431B2
(en)
|
2011-11-04 |
2016-04-19 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Integrated circuit having a MOM capacitor and method of making same
|
|
US20130189845A1
(en)
|
2012-01-19 |
2013-07-25 |
Applied Materials, Inc. |
Conformal amorphous carbon for spacer and spacer protection applications
|
|
US8592328B2
(en)
|
2012-01-20 |
2013-11-26 |
Novellus Systems, Inc. |
Method for depositing a chlorine-free conformal sin film
|
|
JP5882776B2
(ja)
|
2012-02-14 |
2016-03-09 |
信越化学工業株式会社 |
レジスト下層膜形成用組成物、及びパターン形成方法
|
|
US8846484B2
(en)
|
2012-02-15 |
2014-09-30 |
Intermolecular, Inc. |
ReRAM stacks preparation by using single ALD or PVD chamber
|
|
WO2013137115A1
(ja)
|
2012-03-15 |
2013-09-19 |
東京エレクトロン株式会社 |
成膜方法及び成膜装置
|
|
JP6125247B2
(ja)
|
2012-03-21 |
2017-05-10 |
株式会社日立国際電気 |
半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム
|
|
US8703578B2
(en)
|
2012-05-29 |
2014-04-22 |
Globalfoundries Singapore Pte. Ltd. |
Middle in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
|
|
US8936977B2
(en)
|
2012-05-29 |
2015-01-20 |
Globalfoundries Singapore Pte. Ltd. |
Late in-situ doped SiGe junctions for PMOS devices on 28 nm low power/high performance technologies using a silicon oxide encapsulation, early halo and extension implantations
|
|
US9487869B2
(en)
|
2012-06-01 |
2016-11-08 |
Carnegie Mellon University |
Pattern transfer with self-assembled nanoparticle assemblies
|
|
US8962078B2
(en)
|
2012-06-22 |
2015-02-24 |
Tokyo Electron Limited |
Method for depositing dielectric films
|
|
CN103515197A
(zh)
|
2012-06-26 |
2014-01-15 |
中芯国际集成电路制造(上海)有限公司 |
自对准多重图形化的掩膜层及其形成方法
|
|
US9023737B2
(en)
|
2012-07-11 |
2015-05-05 |
Asm Ip Holding B.V. |
Method for forming conformal, homogeneous dielectric film by cyclic deposition and heat treatment
|
|
US20140023794A1
(en)
|
2012-07-23 |
2014-01-23 |
Maitreyee Mahajani |
Method And Apparatus For Low Temperature ALD Deposition
|
|
US8716136B1
(en)
|
2012-10-19 |
2014-05-06 |
Globalfoundries Inc. |
Method of forming a semiconductor structure including a wet etch process for removing silicon nitride
|
|
KR102207992B1
(ko)
|
2012-10-23 |
2021-01-26 |
램 리써치 코포레이션 |
서브-포화된 원자층 증착 및 등각막 증착
|
|
KR102052936B1
(ko)
|
2012-11-13 |
2019-12-06 |
삼성전자 주식회사 |
반도체 소자 제조 방법
|
|
US8784951B2
(en)
|
2012-11-16 |
2014-07-22 |
Asm Ip Holding B.V. |
Method for forming insulation film using non-halide precursor having four or more silicons
|
|
US9362133B2
(en)
|
2012-12-14 |
2016-06-07 |
Lam Research Corporation |
Method for forming a mask by etching conformal film on patterned ashable hardmask
|
|
US9446965B2
(en)
|
2013-02-19 |
2016-09-20 |
Nanotech Industrial Solutions, Inc. |
Applications for inorganic fullerene-like particles
|
|
US8623770B1
(en)
*
|
2013-02-21 |
2014-01-07 |
HGST Netherlands B.V. |
Method for sidewall spacer line doubling using atomic layer deposition of a titanium oxide
|
|
US20140273531A1
(en)
|
2013-03-14 |
2014-09-18 |
Asm Ip Holding B.V. |
Si PRECURSORS FOR DEPOSITION OF SiN AT LOW TEMPERATURES
|
|
US9824881B2
(en)
|
2013-03-14 |
2017-11-21 |
Asm Ip Holding B.V. |
Si precursors for deposition of SiN at low temperatures
|
|
US9564309B2
(en)
|
2013-03-14 |
2017-02-07 |
Asm Ip Holding B.V. |
Si precursors for deposition of SiN at low temperatures
|
|
US20140273530A1
(en)
|
2013-03-15 |
2014-09-18 |
Victor Nguyen |
Post-Deposition Treatment Methods For Silicon Nitride
|
|
TW201441408A
(zh)
|
2013-03-15 |
2014-11-01 |
Applied Materials Inc |
包含氮化矽之膜的電漿輔助原子層沉積
|
|
US20140271097A1
(en)
|
2013-03-15 |
2014-09-18 |
Applied Materials, Inc. |
Processing systems and methods for halide scavenging
|
|
WO2014149281A1
(en)
|
2013-03-15 |
2014-09-25 |
Applied Materials, Inc. |
Layer-by-layer deposition of carbon-doped oxide films
|
|
US9012336B2
(en)
|
2013-04-08 |
2015-04-21 |
Applied Materials, Inc. |
Method for conformal treatment of dielectric films using inductively coupled plasma
|
|
US9209274B2
(en)
|
2013-07-19 |
2015-12-08 |
Globalfoundries Inc. |
Highly conformal extension doping in advanced multi-gate devices
|
|
KR102081195B1
(ko)
|
2013-08-28 |
2020-02-25 |
삼성전자주식회사 |
반도체 장치 및 이의 제조 방법
|
|
US20150251917A1
(en)
*
|
2013-10-21 |
2015-09-10 |
Qualcomm Mems Technologies, Inc. |
Method of patterning pillars
|
|
US9159579B2
(en)
|
2013-10-25 |
2015-10-13 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Lithography using multilayer spacer for reduced spacer footing
|
|
KR101860243B1
(ko)
|
2013-11-08 |
2018-05-21 |
도쿄엘렉트론가부시키가이샤 |
Euv 리소그래피를 가속화하기 위한 사후처리 방법을 이용한 방법
|
|
US10084016B2
(en)
|
2013-11-21 |
2018-09-25 |
Micron Technology, Inc. |
Cross-point memory and methods for fabrication of same
|
|
TWI480415B
(zh)
|
2013-11-27 |
2015-04-11 |
Ind Tech Res Inst |
多模式薄膜沉積設備以及薄膜沉積方法
|
|
US9123776B2
(en)
*
|
2013-12-04 |
2015-09-01 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Self-aligned double spacer patterning process
|
|
US9614053B2
(en)
*
|
2013-12-05 |
2017-04-04 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Spacers with rectangular profile and methods of forming the same
|
|
CN111430224B
(zh)
*
|
2014-01-13 |
2023-07-28 |
应用材料公司 |
具有空间原子层沉积的自对准式双图案化
|
|
US9806129B2
(en)
|
2014-02-25 |
2017-10-31 |
Micron Technology, Inc. |
Cross-point memory and methods for fabrication of same
|
|
US9660080B2
(en)
*
|
2014-02-28 |
2017-05-23 |
Stmicroelectronics, Inc. |
Multi-layer strained channel FinFET
|
|
CN103972076A
(zh)
*
|
2014-05-20 |
2014-08-06 |
上海华力微电子有限公司 |
一种自对准双层图形的形成方法
|
|
US9406522B2
(en)
|
2014-07-24 |
2016-08-02 |
Applied Materials, Inc. |
Single platform, multiple cycle spacer deposition and etch
|
|
US9728406B2
(en)
*
|
2014-08-08 |
2017-08-08 |
Applied Materials, Inc. |
Multi materials and selective removal enabled reverse tone process
|
|
US20160049307A1
(en)
|
2014-08-15 |
2016-02-18 |
Yijian Chen |
Patterning method for IC fabrication using 2-D layout decomposition and synthesis techniques
|
|
US9318334B2
(en)
*
|
2014-08-27 |
2016-04-19 |
United Microelectronics Corp. |
Method for fabricating semiconductor device
|
|
US9576792B2
(en)
|
2014-09-17 |
2017-02-21 |
Asm Ip Holding B.V. |
Deposition of SiN
|
|
US9214333B1
(en)
|
2014-09-24 |
2015-12-15 |
Lam Research Corporation |
Methods and apparatuses for uniform reduction of the in-feature wet etch rate of a silicon nitride film formed by ALD
|
|
US9355837B2
(en)
|
2014-09-25 |
2016-05-31 |
Micron Technology, Inc. |
Methods of forming and using materials containing silicon and nitrogen
|
|
US9875888B2
(en)
|
2014-10-03 |
2018-01-23 |
Applied Materials, Inc. |
High temperature silicon oxide atomic layer deposition technology
|
|
US9791779B2
(en)
*
|
2014-10-16 |
2017-10-17 |
Tokyo Electron Limited |
EUV resist etch durability improvement and pattern collapse mitigation
|
|
US9685332B2
(en)
*
|
2014-10-17 |
2017-06-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Iterative self-aligned patterning
|
|
US9564312B2
(en)
|
2014-11-24 |
2017-02-07 |
Lam Research Corporation |
Selective inhibition in atomic layer deposition of silicon-containing films
|
|
US9589790B2
(en)
|
2014-11-24 |
2017-03-07 |
Lam Research Corporation |
Method of depositing ammonia free and chlorine free conformal silicon nitride film
|
|
US9449971B2
(en)
|
2014-12-01 |
2016-09-20 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Methods of forming FinFETs
|
|
US9620377B2
(en)
|
2014-12-04 |
2017-04-11 |
Lab Research Corporation |
Technique to deposit metal-containing sidewall passivation for high aspect ratio cylinder etch
|
|
EP3035379B1
(en)
|
2014-12-15 |
2020-07-01 |
IMEC vzw |
Method for blocking a trench portion
|
|
US9673059B2
(en)
*
|
2015-02-02 |
2017-06-06 |
Tokyo Electron Limited |
Method for increasing pattern density in self-aligned patterning integration schemes
|
|
US9443731B1
(en)
|
2015-02-20 |
2016-09-13 |
Tokyo Electron Limited |
Material processing to achieve sub-10nm patterning
|
|
US9530646B2
(en)
*
|
2015-02-24 |
2016-12-27 |
United Microelectronics Corp. |
Method of forming a semiconductor structure
|
|
US9472506B2
(en)
|
2015-02-25 |
2016-10-18 |
International Business Machines Corporation |
Registration mark formation during sidewall image transfer process
|
|
US9748093B2
(en)
|
2015-03-18 |
2017-08-29 |
Applied Materials, Inc. |
Pulsed nitride encapsulation
|
|
US9502238B2
(en)
|
2015-04-03 |
2016-11-22 |
Lam Research Corporation |
Deposition of conformal films by atomic layer deposition and atomic layer etch
|
|
US9786503B2
(en)
|
2015-04-08 |
2017-10-10 |
Tokyo Electron Limited |
Method for increasing pattern density in self-aligned patterning schemes without using hard masks
|
|
US9406693B1
(en)
|
2015-04-20 |
2016-08-02 |
Sandisk Technologies Llc |
Selective removal of charge-trapping layer for select gate transistors and dummy memory cells in 3D stacked memory
|
|
CN106298519A
(zh)
*
|
2015-05-15 |
2017-01-04 |
联华电子股份有限公司 |
形成半导体结构的方法
|
|
US9653571B2
(en)
*
|
2015-06-15 |
2017-05-16 |
International Business Machines Corporation |
Freestanding spacer having sub-lithographic lateral dimension and method of forming same
|
|
US9508560B1
(en)
*
|
2015-06-18 |
2016-11-29 |
International Business Machines Corporation |
SiARC removal with plasma etch and fluorinated wet chemical solution combination
|
|
US9530663B1
(en)
|
2015-06-23 |
2016-12-27 |
Nanya Technology Corp. |
Method for forming a pattern
|
|
US9748110B2
(en)
|
2015-09-03 |
2017-08-29 |
Tokyo Electron Limited |
Method and system for selective spacer etch for multi-patterning schemes
|
|
US9601693B1
(en)
|
2015-09-24 |
2017-03-21 |
Lam Research Corporation |
Method for encapsulating a chalcogenide material
|
|
CN108292591A
(zh)
*
|
2015-09-24 |
2018-07-17 |
东京毅力科创株式会社 |
形成用于亚分辨率衬底图案化的刻蚀掩模的方法
|
|
US10141417B2
(en)
|
2015-10-20 |
2018-11-27 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
Gate structure, semiconductor device and the method of forming semiconductor device
|
|
KR102603019B1
(ko)
|
2015-11-20 |
2023-11-15 |
도쿄엘렉트론가부시키가이샤 |
분해능이하 기판 패터닝을 위한 에칭 마스크를 형성하는 방법
|
|
US9576817B1
(en)
|
2015-12-03 |
2017-02-21 |
International Business Machines Corporation |
Pattern decomposition for directed self assembly patterns templated by sidewall image transfer
|
|
US9508604B1
(en)
|
2016-04-29 |
2016-11-29 |
Globalfoundries Inc. |
Methods of forming punch through stop regions on FinFET devices on CMOS-based IC products using doped spacers
|
|
US10157736B2
(en)
|
2016-05-06 |
2018-12-18 |
Lam Research Corporation |
Methods of encapsulation
|
|
CN105977141A
(zh)
*
|
2016-05-10 |
2016-09-28 |
上海格易电子有限公司 |
一种自对准双重图形化的方法
|
|
US10062563B2
(en)
|
2016-07-01 |
2018-08-28 |
Lam Research Corporation |
Selective atomic layer deposition with post-dose treatment
|
|
US10629435B2
(en)
|
2016-07-29 |
2020-04-21 |
Lam Research Corporation |
Doped ALD films for semiconductor patterning applications
|
|
US10037884B2
(en)
|
2016-08-31 |
2018-07-31 |
Lam Research Corporation |
Selective atomic layer deposition for gapfill using sacrificial underlayer
|
|
US10074543B2
(en)
|
2016-08-31 |
2018-09-11 |
Lam Research Corporation |
High dry etch rate materials for semiconductor patterning applications
|
|
US10454029B2
(en)
|
2016-11-11 |
2019-10-22 |
Lam Research Corporation |
Method for reducing the wet etch rate of a sin film without damaging the underlying substrate
|
|
US10134579B2
(en)
|
2016-11-14 |
2018-11-20 |
Lam Research Corporation |
Method for high modulus ALD SiO2 spacer
|
|
US10269559B2
(en)
|
2017-09-13 |
2019-04-23 |
Lam Research Corporation |
Dielectric gapfill of high aspect ratio features utilizing a sacrificial etch cap layer
|
