JP2021515405A5 - - Google Patents
Info
- Publication number
- JP2021515405A5 JP2021515405A5 JP2020546333A JP2020546333A JP2021515405A5 JP 2021515405 A5 JP2021515405 A5 JP 2021515405A5 JP 2020546333 A JP2020546333 A JP 2020546333A JP 2020546333 A JP2020546333 A JP 2020546333A JP 2021515405 A5 JP2021515405 A5 JP 2021515405A5
- Authority
- JP
- Japan
- Prior art keywords
- amorphous silicon
- silicon layer
- substrate
- plasma
- process chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2023117932A JP7580540B2 (ja) | 2018-03-09 | 2023-07-20 | Ｐｅｃｖｄによるｓｉギャップ充填の方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201862640853P | 2018-03-09 | 2018-03-09 | |
| US62/640,853 | 2018-03-09 | ||
| PCT/US2019/021205 WO2019173624A1 (en) | 2018-03-09 | 2019-03-07 | A method for si gap fill by pecvd |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023117932A Division JP7580540B2 (ja) | 2018-03-09 | 2023-07-20 | Ｐｅｃｖｄによるｓｉギャップ充填の方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021515405A JP2021515405A (ja) | 2021-06-17 |
| JP2021515405A5 true JP2021515405A5 (enExample) | 2022-03-15 |
| JP7319288B2 JP7319288B2 (ja) | 2023-08-01 |
Family
ID=67845756
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2020546333A Active JP7319288B2 (ja) | 2018-03-09 | 2019-03-07 | Ｐｅｃｖｄによるｓｉギャップ充填の方法 |
| JP2023117932A Active JP7580540B2 (ja) | 2018-03-09 | 2023-07-20 | Ｐｅｃｖｄによるｓｉギャップ充填の方法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023117932A Active JP7580540B2 (ja) | 2018-03-09 | 2023-07-20 | Ｐｅｃｖｄによるｓｉギャップ充填の方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US11361991B2 (enExample) |
| JP (2) | JP7319288B2 (enExample) |
| KR (1) | KR102714970B1 (enExample) |
| CN (1) | CN112335032B (enExample) |
| SG (1) | SG11202008150VA (enExample) |
| WO (1) | WO2019173624A1 (enExample) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US11361991B2 (en) * | 2018-03-09 | 2022-06-14 | Applied Materials, Inc. | Method for Si gap fill by PECVD |
| US20240420950A1 (en) * | 2023-06-14 | 2024-12-19 | Applied Materials, Inc. | Densified seam-free silicon-containing material gap fill processes |
| US20250125145A1 (en) * | 2023-10-11 | 2025-04-17 | Applied Materials, Inc. | Methods to improve oxide sidewall quality |
| WO2025248744A1 (ja) * | 2024-05-31 | 2025-12-04 | 東京エレクトロン株式会社 | 埋め込み方法及び成膜装置 |
Family Cites Families (27)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4569701A (en) * | 1984-04-05 | 1986-02-11 | At&T Bell Laboratories | Technique for doping from a polysilicon transfer layer |
| US4676847A (en) * | 1985-01-25 | 1987-06-30 | American Telephone And Telegraph Company At&T Bell Laboratories | Controlled boron doping of silicon |
| JP3222615B2 (ja) * | 1993-03-31 | 2001-10-29 | 株式会社東芝 | 表面処理装置 |
| JP2565131B2 (ja) * | 1994-04-22 | 1996-12-18 | 日本電気株式会社 | 半導体装置の製造方法 |
| JP2636796B2 (ja) * | 1995-05-24 | 1997-07-30 | 日本電気株式会社 | 半導体装置の製造方法 |
| US6670235B1 (en) * | 2001-08-28 | 2003-12-30 | Infineon Technologies Ag | Process flow for two-step collar in DRAM preparation |
| US20030162363A1 (en) * | 2002-02-22 | 2003-08-28 | Hua Ji | HDP CVD process for void-free gap fill of a high aspect ratio trench |
| US6802944B2 (en) * | 2002-10-23 | 2004-10-12 | Applied Materials, Inc. | High density plasma CVD process for gapfill into high aspect ratio features |
| TWI579916B (zh) | 2009-12-09 | 2017-04-21 | 諾菲勒斯系統公司 | 整合可流動氧化物及頂蓋氧化物之新穎間隙填充 |
| JP5692763B2 (ja) | 2010-05-20 | 2015-04-01 | 東京エレクトロン株式会社 | シリコン膜の形成方法およびその形成装置 |
| US10011920B2 (en) * | 2011-02-23 | 2018-07-03 | International Business Machines Corporation | Low-temperature selective epitaxial growth of silicon for device integration |
| US8940388B2 (en) * | 2011-03-02 | 2015-01-27 | Micron Technology, Inc. | Insulative elements |
| US20140187045A1 (en) | 2013-01-02 | 2014-07-03 | Applied Materials, Inc. | Silicon nitride gapfill implementing high density plasma |
| US8921235B2 (en) | 2013-03-04 | 2014-12-30 | Applied Materials, Inc. | Controlled air gap formation |
| CN104163398B (zh) * | 2013-05-17 | 2017-02-08 | 无锡华润上华半导体有限公司 | 半导体器件中深槽的填充结构及其填充方法 |
| JP6082712B2 (ja) * | 2013-07-31 | 2017-02-15 | 東京エレクトロン株式会社 | シリコン膜の成膜方法および薄膜の成膜方法 |
| JP6322305B2 (ja) | 2013-07-31 | 2018-05-09 | 東京エレクトロン株式会社 | 薄膜の成膜方法 |
| CN105336670B (zh) * | 2014-07-14 | 2018-07-10 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| JP6392683B2 (ja) | 2015-02-18 | 2018-09-19 | 東京エレクトロン株式会社 | 凹部を充填する方法及び処理装置 |
| US9565488B2 (en) * | 2015-05-20 | 2017-02-07 | Infineon Technologies Ag | Micro-electro-mechanical system devices |
| TWI715645B (zh) * | 2015-10-22 | 2021-01-11 | 美商應用材料股份有限公司 | 正形及縫隙填充非晶矽薄膜的沉積 |
| US10115601B2 (en) * | 2016-02-03 | 2018-10-30 | Tokyo Electron Limited | Selective film formation for raised and recessed features using deposition and etching processes |
| JP6541591B2 (ja) * | 2016-03-07 | 2019-07-10 | 東京エレクトロン株式会社 | 凹部内の結晶成長方法および処理装置 |
| WO2017161236A1 (en) | 2016-03-17 | 2017-09-21 | Applied Materials, Inc. | Methods for gapfill in high aspect ratio structures |
| KR20190011817A (ko) * | 2016-06-25 | 2019-02-07 | 어플라이드 머티어리얼스, 인코포레이티드 | 갭충전 애플리케이션들을 위한 유동가능 비정질 실리콘 막들 |
| JP6606476B2 (ja) | 2016-08-02 | 2019-11-13 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体装置の製造方法、基板処理装置およびプログラム |
| US11361991B2 (en) * | 2018-03-09 | 2022-06-14 | Applied Materials, Inc. | Method for Si gap fill by PECVD |
-
2019
- 2019-03-07 US US16/975,794 patent/US11361991B2/en active Active
- 2019-03-07 JP JP2020546333A patent/JP7319288B2/ja active Active
- 2019-03-07 WO PCT/US2019/021205 patent/WO2019173624A1/en not_active Ceased
- 2019-03-07 CN CN201980023731.9A patent/CN112335032B/zh active Active
- 2019-03-07 KR KR1020207028877A patent/KR102714970B1/ko active Active
- 2019-03-07 SG SG11202008150VA patent/SG11202008150VA/en unknown
-
2022
- 2022-06-13 US US17/839,170 patent/US11848232B2/en active Active
-
2023
- 2023-07-20 JP JP2023117932A patent/JP7580540B2/ja active Active
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