JP2021534587A5 - - Google Patents

Info

Publication number
JP2021534587A5
JP2021534587A5 JP2021507986A JP2021507986A JP2021534587A5 JP 2021534587 A5 JP2021534587 A5 JP 2021534587A5 JP 2021507986 A JP2021507986 A JP 2021507986A JP 2021507986 A JP2021507986 A JP 2021507986A JP 2021534587 A5 JP2021534587 A5 JP 2021534587A5
Authority
JP
Japan
Prior art keywords
processing chamber
approximately
dielectric
resistance layer
disposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
JP2021507986A
Other languages
English (en)
Japanese (ja)
Other versions
JP2021534587A (ja
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/US2019/043243 external-priority patent/WO2020036715A1/en
Publication of JP2021534587A publication Critical patent/JP2021534587A/ja
Publication of JP2021534587A5 publication Critical patent/JP2021534587A5/ja
Ceased legal-status Critical Current

Links

JP2021507986A 2018-08-17 2019-07-24 処理チャンバ用コーティング材料 Ceased JP2021534587A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201862719575P 2018-08-17 2018-08-17
US62/719,575 2018-08-17
PCT/US2019/043243 WO2020036715A1 (en) 2018-08-17 2019-07-24 Coating material for processing chambers

Publications (2)

Publication Number Publication Date
JP2021534587A JP2021534587A (ja) 2021-12-09
JP2021534587A5 true JP2021534587A5 (enExample) 2022-08-01

Family

ID=69523015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021507986A Ceased JP2021534587A (ja) 2018-08-17 2019-07-24 処理チャンバ用コーティング材料

Country Status (7)

Country Link
US (1) US20200058539A1 (enExample)
JP (1) JP2021534587A (enExample)
KR (1) KR20210033541A (enExample)
CN (1) CN112534560A (enExample)
SG (1) SG11202100059VA (enExample)
TW (1) TWI811421B (enExample)
WO (1) WO2020036715A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220020589A1 (en) * 2020-07-19 2022-01-20 Applied Materials, Inc. Dielectric coating for deposition chamber
US12469733B2 (en) * 2021-12-14 2025-11-11 Applied Materials, Inc. Wafer to baseplate arc prevention using textured dielectric
WO2023146648A1 (en) * 2022-01-28 2023-08-03 Lam Research Corporation Undercoating coverage and resistance control for escs of substrate processing systems

Family Cites Families (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4900591A (en) * 1988-01-20 1990-02-13 The United States Of America As Represented By The Secretary Of The Air Force Method for the deposition of high quality silicon dioxide at low temperature
TWI337753B (en) * 2004-05-26 2011-02-21 Applied Materials Inc Variable quadruple electromagnet array, particularly used in a multi-step process for forming a metal barrier in a sputter reactor
US7686926B2 (en) * 2004-05-26 2010-03-30 Applied Materials, Inc. Multi-step process for forming a metal barrier in a sputter reactor
JP4804824B2 (ja) * 2005-07-27 2011-11-02 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP4847231B2 (ja) * 2006-06-29 2011-12-28 ルネサスエレクトロニクス株式会社 電界に起因する剥離物による汚染を防止する装置
US7983017B2 (en) * 2006-12-26 2011-07-19 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
SG2012059440A (en) * 2007-08-10 2014-03-28 Quantum Global Tech Llc Methods and apparatus for ex situ seasoning of electronic device manufacturing process components
JP5475261B2 (ja) * 2008-03-31 2014-04-16 東京エレクトロン株式会社 プラズマ処理装置
JP2011077442A (ja) * 2009-10-01 2011-04-14 Tokyo Electron Ltd プラズマ処理方法およびプラズマ処理装置
WO2011143062A2 (en) * 2010-05-12 2011-11-17 Applied Materials, Inc. Confined process volume pecvd chamber
CN102986017B (zh) * 2010-05-28 2015-09-16 恩特格林斯公司 高表面电阻率静电吸盘
JP5835985B2 (ja) * 2010-09-16 2015-12-24 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
US9944561B2 (en) * 2014-03-10 2018-04-17 Sumitomo Osaka Cement Co., Ltd. Dielectric material and electrostatic chucking device
US10403535B2 (en) * 2014-08-15 2019-09-03 Applied Materials, Inc. Method and apparatus of processing wafers with compressive or tensile stress at elevated temperatures in a plasma enhanced chemical vapor deposition system
US10020218B2 (en) * 2015-11-17 2018-07-10 Applied Materials, Inc. Substrate support assembly with deposited surface features
JP2020502803A (ja) * 2016-12-16 2020-01-23 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ チャンバドリフティングなしで高温処理を可能にする方法

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