JP2007284791A - プラズマ化学気相成長法に基づく多層薄膜構造の製造方法 - Google Patents
プラズマ化学気相成長法に基づく多層薄膜構造の製造方法 Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims abstract description 26
- 238000000034 method Methods 0.000 claims abstract description 35
- 239000000203 mixture Substances 0.000 claims abstract description 25
- 230000000704 physical effect Effects 0.000 claims abstract description 8
- 239000000463 material Substances 0.000 claims abstract description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 30
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
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- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
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Abstract
【解決手段】プラズマ生成用混合ガスの比率を変化させない状態で、印加されるプラズマ周波数を変更して当該プラズマ周波数のプラズマ組成に対応する薄膜を順次形成する過程を含む構成とした。
【選択図】図1
Description
第1RF発電機のみを稼動して13.56MHzを印加した状態で、反応ガス(混合ガス)のSiH4とNH3との組成比(NH3/SiH4)を0.6〜2.0の範囲で変化させつつシリコンウエハー上にシリコン窒化膜を蒸着し、そのシリコン窒化膜の屈折率をそれぞれ測定した。
高屈折率のシリコン窒化膜上に低屈折率のシリコン窒化膜が積層されている反射防止膜をシリコンウエハーに形成するために、上記表1の工程条件で反応ガスの組成比(NH3/SiH4)を1.0とし、第1RF発電機を90秒間稼動して屈折率2.07のシリコン窒化膜を厚さ40nmに蒸着し、1〜2秒間の休息後に、第2RF発電機を98秒間稼動して屈折率1.96のシリコン窒化膜を厚さ40nmに蒸着することで、多層構造の反射防止膜を製造した。
高屈折率のシリコン窒化膜上に低屈折率のシリコン窒化膜が積層されている反射防止膜をシリコンウエハーに形成するために、上記表1の工程条件で、まず反応ガスの組成比(NH3/SiH4)を1.0とし、第1RF発電機を90秒間稼動して屈折率2.07のシリコン窒化膜を厚さ40nmに蒸着した。その後、反応ガスの注入を中断した状態で、雰囲気ガスのみを60秒間注入してチャンバーの雰囲気を一新した。再度、反応ガスの組成比(NH3/SiH4)を1.5としてチャンバー内に注入し、第1RF発電機を98秒間稼動して屈折率1.96のシリコン窒化膜を厚さ40nmに蒸着することで、多層構造の反射防止膜を製造した。
上記実施例2及び比較例1からわかるように、シリコンウエハー上に同じ多層構造の反射防止膜を製造するに当たり、本発明による実施例2では印加周波数の変更過程で1〜2秒程度の時間だけがかかったのに対し、比較例1ではチャンバー雰囲気の一新及び薄膜の再蒸着のために少なくとも1〜2分以上がかかり、全般的な工程時間において大きな差があった。
300 サセプタ
400 基板
500 第1RF発電機
600 第2RF発電機
700 平板電極
720 吹込み穴
800 気体注入管
820 ガス排気管
900 スロットバルブ
Claims (10)
- プラズマ化学気相成長(Plasma−Enhanced Chemical Vapor Deposition:PECVD)工程によって基材上に相異なる物性の多層薄膜構造を製造する方法であって、プラズマ生成用混合ガスの比率を変化させない状態で、
印加されるプラズマ周波数を変更して当該プラズマ周波数のプラズマ組成に対応する薄膜を順次形成する過程を含むことを特徴とする製造方法。 - 前記PECVD工程のための装置には、相異なる周波数を提供する二またはそれ以上の発電機が備えられており、これらの発電機の選択的作動によってプラズマ周波数を変更することを特徴とする、請求項1に記載の製造方法。
- 前記発電機のプラズマ周波数の印加時間を所定の周期に変更してプラズマ組成を決定することを特徴とする、請求項2に記載の製造方法。
- 前記基材は、半導体製造用シリコンウエハー、TFT製造用ガラス基板、または太陽電池製造用シリコンウエハーであることを特徴とする、請求項1に記載の製造方法。
- 前記基材は、太陽電池製造用シリコンウエハーであり、前記多層薄膜は相異なる屈折率を有する多層構造の反射防止膜であることを特徴とする、請求項1に記載の製造方法。
- 前記反射防止膜は、シリコン窒化膜であることを特徴とする、請求項5に記載の製造方法。
- 前記シリコン窒化膜は、SiH4及びNH3を含む混合ガスとN2またはAr雰囲気ガスとがPECVD装置の反応チャンバーに供給されることによって形成されることを特徴とする、請求項6に記載の製造方法。
- 前記PECVD装置には、高周波数発電機として5〜50MHz発電機と低周波数発電機として10〜500kHz発電機が設置されており、前記高周波数発電機と低周波数発電機を順次に作動させてプラズマ組成を変化させることを特徴とする、請求項7に記載の製造方法。
- 前記高周波数発電機と低周波数発電機を1ないし60秒の間隔で交互に作動させて、所定の屈折率を持つシリコン窒化膜を形成することを特徴とする、請求項8に記載の製造方法。
- 請求項1乃至9のいずれか1項による方法で製造された多層薄膜構造の反射防止膜を含んでなる太陽電池モジュール。
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KR1020060034356A KR20070102764A (ko) | 2006-04-17 | 2006-04-17 | Pecvd 법에 기반한 다층 박막 구조의 제조방법 |
KR10-2006-0034356 | 2006-04-17 |
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JP2007284791A true JP2007284791A (ja) | 2007-11-01 |
JP4960134B2 JP4960134B2 (ja) | 2012-06-27 |
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US (1) | US20070243386A1 (ja) |
JP (1) | JP4960134B2 (ja) |
KR (1) | KR20070102764A (ja) |
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WO2012157358A1 (ja) * | 2011-05-16 | 2012-11-22 | 浜松ホトニクス株式会社 | 光学部品の製造方法及び光学部品 |
WO2013021705A1 (ja) * | 2011-08-11 | 2013-02-14 | Sppテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
JP2013125964A (ja) * | 2011-12-13 | 2013-06-24 | Samsung Sdi Co Ltd | 光起電力素子及びその製造方法 |
JP2021013044A (ja) * | 2020-11-06 | 2021-02-04 | シャープ株式会社 | 光電変換素子 |
WO2023095999A1 (ko) * | 2021-11-24 | 2023-06-01 | 주식회사 아이에스티이 | Sicn 박막 형성 방법 |
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KR101497413B1 (ko) * | 2008-08-28 | 2015-03-02 | 주식회사 뉴파워 프라즈마 | 용량 결합 플라즈마 반응기 및 이를 이용한 플라즈마 처리 방법 및 이것에 의해 제조된 반도체 장치 |
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WO2012157358A1 (ja) * | 2011-05-16 | 2012-11-22 | 浜松ホトニクス株式会社 | 光学部品の製造方法及び光学部品 |
JP2012242450A (ja) * | 2011-05-16 | 2012-12-10 | Hamamatsu Photonics Kk | 光学部品の製造方法及び光学部品 |
CN103582830A (zh) * | 2011-05-16 | 2014-02-12 | 浜松光子学株式会社 | 光学部件的制造方法以及光学部件 |
US9372285B2 (en) | 2011-05-16 | 2016-06-21 | Hamamatsu Photonics K.K. | Production method for optical component and optical component |
CN103582830B (zh) * | 2011-05-16 | 2016-08-31 | 浜松光子学株式会社 | 光学部件的制造方法以及光学部件 |
WO2013021705A1 (ja) * | 2011-08-11 | 2013-02-14 | Sppテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
JP2013125964A (ja) * | 2011-12-13 | 2013-06-24 | Samsung Sdi Co Ltd | 光起電力素子及びその製造方法 |
JP2021013044A (ja) * | 2020-11-06 | 2021-02-04 | シャープ株式会社 | 光電変換素子 |
WO2023095999A1 (ko) * | 2021-11-24 | 2023-06-01 | 주식회사 아이에스티이 | Sicn 박막 형성 방법 |
Also Published As
Publication number | Publication date |
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JP4960134B2 (ja) | 2012-06-27 |
KR20070102764A (ko) | 2007-10-22 |
US20070243386A1 (en) | 2007-10-18 |
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