JP4960134B2 - プラズマ化学気相成長法に基づく多層薄膜構造の製造方法 - Google Patents
プラズマ化学気相成長法に基づく多層薄膜構造の製造方法 Download PDFInfo
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- 239000010409 thin film Substances 0.000 title claims description 42
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 title claims description 23
- 238000004519 manufacturing process Methods 0.000 title claims description 22
- 239000010408 film Substances 0.000 claims description 54
- 238000000034 method Methods 0.000 claims description 35
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 29
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 29
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 12
- 239000010703 silicon Substances 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 7
- 239000007789 gas Substances 0.000 description 22
- 239000000203 mixture Substances 0.000 description 20
- 239000012495 reaction gas Substances 0.000 description 8
- 230000000704 physical effect Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 230000003667 anti-reflective effect Effects 0.000 description 1
- 238000007664 blowing Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000752 ionisation method Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000000284 resting effect Effects 0.000 description 1
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/34—Nitrides
- C23C16/345—Silicon nitride
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- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32137—Radio frequency generated discharge controlling of the discharge by modulation of energy
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- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
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Description
第1RF発電機のみを稼動して13.56MHzを印加した状態で、反応ガス(混合ガス)のSiH4とNH3との組成比(NH3/SiH4)を0.6〜2.0の範囲で変化させつつシリコンウエハー上にシリコン窒化膜を蒸着し、そのシリコン窒化膜の屈折率をそれぞれ測定した。
高屈折率のシリコン窒化膜上に低屈折率のシリコン窒化膜が積層されている反射防止膜をシリコンウエハーに形成するために、上記表1の工程条件で反応ガスの組成比(NH3/SiH4)を1.0とし、第1RF発電機を90秒間稼動して屈折率2.07のシリコン窒化膜を厚さ40nmに蒸着し、1〜2秒間の休息後に、第2RF発電機を98秒間稼動して屈折率1.96のシリコン窒化膜を厚さ40nmに蒸着することで、多層構造の反射防止膜を製造した。
高屈折率のシリコン窒化膜上に低屈折率のシリコン窒化膜が積層されている反射防止膜をシリコンウエハーに形成するために、上記表1の工程条件で、まず反応ガスの組成比(NH3/SiH4)を1.0とし、第1RF発電機を90秒間稼動して屈折率2.07のシリコン窒化膜を厚さ40nmに蒸着した。その後、反応ガスの注入を中断した状態で、雰囲気ガスのみを60秒間注入してチャンバーの雰囲気を一新した。再度、反応ガスの組成比(NH3/SiH4)を1.5としてチャンバー内に注入し、第1RF発電機を98秒間稼動して屈折率1.96のシリコン窒化膜を厚さ40nmに蒸着することで、多層構造の反射防止膜を製造した。
上記実施例2及び比較例1からわかるように、シリコンウエハー上に同じ多層構造の反射防止膜を製造するに当たり、本発明による実施例2では印加周波数の変更過程で1〜2秒程度の時間だけがかかったのに対し、比較例1ではチャンバー雰囲気の一新及び薄膜の再蒸着のために少なくとも1〜2分以上がかかり、全般的な工程時間において大きな差があった。
300 サセプタ
400 基板
500 第1RF発電機
600 第2RF発電機
700 平板電極
720 吹込み穴
800 気体注入管
820 ガス排気管
900 スロットバルブ
Claims (9)
- プラズマ化学気相成長(Plasma−Enhanced Chemical Vapor Deposition:PECVD)工程で太陽電池用基材上に第1及び第2反射防止膜を製造する方法であって、
印加されるプラズマ周波数を変更して当該プラズマ周波数の対応する前記第1及び第2反射防止膜を順次形成する過程を含み、
前記PECVD工程のための装置は、相異なる周波数を提供する第1及び第2発電機を含み、
前記第1及び第2発電機の選択的作動によってプラズマ周波数を変更し、前記第1及び第2発電機のプラズマ周波数の印加時間を変更し、
前記第1発電機は高プラズマ周波数(high plasma frequency)を発生させ、前記第2発電機は低プラズマ周波数(low plasma frequency)を発生させ、
前記第1発電機から出力される前記高プラズマ周波数を使って前記基材の上に前記第1屈折率を有する前記第1反射防止膜を形成し、前記第2発電機から出力される前記低プラズマ周波数を使って前記基材の上に前記第2屈折率を有する前記第2反射防止膜を形成し、
前記第1屈折率は2.07であり、前記第2屈折率は1.96であり、前記第1及び第2反射防止膜は同一である物質からなる製造方法。 - 前記基材はシリコンウエハーであることを特徴とする、請求項1に記載の製造方法。
- 前記基材は太陽電池製造用シリコンウエハーであり、前記多層薄膜は相異なる屈折率を有する多層構造の反射防止膜であることを特徴とする、請求項1に記載の製造方法。
- 前記第1及び第2反射防止膜は、シリコン窒化膜であることを特徴とする、請求項1に記載の製造方法。
- 前記シリコン窒化膜は、SiH4及びNH3を含む混合ガスとN2またはAr雰囲気ガスとがPECVD装置の反応チャンバーに供給されることによって形成されることを特徴とする、請求項4に記載の製造方法。
- 前記第1周波数発電機は5〜50MHz発電機であり、前記第2周波数発電機は10〜500kHz発電機であることを特徴とする、請求項2に記載の製造方法。
- 前記高プラズマ周波数は5〜50MHzであり、前記低プラズマ周波数は10〜500KHzであることを特徴とする、請求項1に記載の製造方法。
- 前記第2反射防止膜を形成する時形成段階は前記高プラズマ周波数と前記低プラズマ周波数を1ないし60秒の間隔で交互に印加することを特徴とする、請求項1に記載の製造方法。
- 請求項1及び請求項6乃至8のいずれか1項による方法で製造された2層の反射防止膜を含んでなる太陽電池モジュール。
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KR1020060034356A KR20070102764A (ko) | 2006-04-17 | 2006-04-17 | Pecvd 법에 기반한 다층 박막 구조의 제조방법 |
KR10-2006-0034356 | 2006-04-17 |
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KR101497413B1 (ko) * | 2008-08-28 | 2015-03-02 | 주식회사 뉴파워 프라즈마 | 용량 결합 플라즈마 반응기 및 이를 이용한 플라즈마 처리 방법 및 이것에 의해 제조된 반도체 장치 |
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DE102010000002B4 (de) * | 2010-01-04 | 2013-02-21 | Roth & Rau Ag | Verfahren zur Abscheidung von Mehrlagenschichten und/oder Gradientenschichten |
CN102234759A (zh) * | 2010-04-29 | 2011-11-09 | 亚洲太阳科技有限公司 | 用于薄膜太阳能电池制造的镀膜方法 |
JP5739224B2 (ja) * | 2011-05-16 | 2015-06-24 | 浜松ホトニクス株式会社 | 光学部品の製造方法及び光学部品 |
JP5922352B2 (ja) * | 2011-08-11 | 2016-05-24 | Sppテクノロジーズ株式会社 | 窒化膜の製造装置及びその製造方法、並びにその製造プログラム |
US20130146136A1 (en) * | 2011-12-13 | 2013-06-13 | Kyoung-Jin Seo | Photovoltaic device and method of manufacturing the same |
KR101869949B1 (ko) | 2013-09-03 | 2018-06-21 | 주식회사 원익아이피에스 | 복합막 증착방법 및 기판 처리 장치 |
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KR102393372B1 (ko) | 2014-11-11 | 2022-05-03 | 삼성디스플레이 주식회사 | 표시 장치 및 표시 장치의 제조 방법 |
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CN106282965B (zh) * | 2016-08-31 | 2019-09-20 | 东方日升新能源股份有限公司 | 太阳能电池硅片的等离子增强化学气相沉积法 |
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KR102438504B1 (ko) * | 2021-11-24 | 2022-08-31 | 주식회사 아이에스티이 | SiCN 박막 형성 방법 |
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JPS62150726A (ja) * | 1985-12-24 | 1987-07-04 | Fuji Electric Co Ltd | 半導体装置の製造方法 |
US4877641A (en) * | 1988-05-31 | 1989-10-31 | Olin Corporation | Process for plasma depositing silicon nitride and silicon dioxide films onto a substrate |
US4837185A (en) * | 1988-10-26 | 1989-06-06 | Intel Corporation | Pulsed dual radio frequency CVD process |
JPH0562971A (ja) * | 1991-09-02 | 1993-03-12 | Fuji Electric Co Ltd | 窒化シリコン膜の形成方法 |
JPH08236460A (ja) * | 1995-02-28 | 1996-09-13 | Canon Inc | 堆積膜形成方法および堆積膜形成装置 |
JP2820070B2 (ja) * | 1995-08-11 | 1998-11-05 | 日本電気株式会社 | プラズマ化学気相成長法とその装置 |
KR100223328B1 (ko) * | 1995-12-29 | 1999-10-15 | 김영환 | 고반사율 기판의 노광빛의 반사를 줄이기 위한반사저지박막제조방법 |
JP2002270879A (ja) * | 2001-03-14 | 2002-09-20 | Mitsubishi Electric Corp | 半導体装置 |
US7233029B2 (en) * | 2003-01-17 | 2007-06-19 | Fujifilm Corporation | Optical functional film, method of forming the same, and spatial light modulator, spatial light modulator array, image forming device and flat panel display using the same |
-
2006
- 2006-04-17 KR KR1020060034356A patent/KR20070102764A/ko active Application Filing
-
2007
- 2007-04-09 US US11/783,406 patent/US20070243386A1/en not_active Abandoned
- 2007-04-16 JP JP2007107219A patent/JP4960134B2/ja not_active Expired - Fee Related
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US20070243386A1 (en) | 2007-10-18 |
JP2007284791A (ja) | 2007-11-01 |
KR20070102764A (ko) | 2007-10-22 |
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