JP2015187902A - 半導体装置およびその駆動方法 - Google Patents
半導体装置およびその駆動方法 Download PDFInfo
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- JP2015187902A JP2015187902A JP2014263970A JP2014263970A JP2015187902A JP 2015187902 A JP2015187902 A JP 2015187902A JP 2014263970 A JP2014263970 A JP 2014263970A JP 2014263970 A JP2014263970 A JP 2014263970A JP 2015187902 A JP2015187902 A JP 2015187902A
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- oxide semiconductor
- oxide
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Abstract
【解決手段】第1のデータを、第1のトランジスタ111を介して第5のトランジスタ115のゲートに与え、第1のトランジスタ111をオフ状態にし、第2のデータを、第2のトランジスタ112を介して容量素子116の第2の電極に与えることで第1のデータを第3のデータに変換し、容量素子116の第2の電極を電気的に浮遊状態にすることでデータの書き込みを行う。容量素子116の第2の電極は、第3のトランジスタ113を介してGNDに接続され初期化される。また、ビット線BLの電位を、第4のトランジスタ114及び第5のトランジスタ115を介して、充電又は放電することで読み出し動作を行う。第1〜第3のトランジスタは酸化物半導体トランジスタを用いることが好ましい。
【選択図】図1
Description
本実施の形態では、本発明の一態様に係る半導体装置が有する、メモリセルの回路構成およびその動作について、図1乃至図6を参照して説明する。
図1は、本発明の一態様であるメモリセル100の回路図である。
次に、図2を用いて、メモリセル100の動作の一例について説明する。図2(A)及至図2(D)には、メモリセル100の動作を模式的に示す。なお、図2(A)乃至(D)では、トランジスタ111乃至113をスイッチとして図示している。
次いで、上述したメモリセル100の動作をタイミングチャート図に沿って説明する。
図4に示すタイミングチャート図は、図3に示すタイミングチャートでノードFN1に書き込まれた電位を読み出す際の、書き込みワード線WWL1、書き込みワード線WWL2、読み出しワード線RWL、ノードFN1、ノードFN2、ビット線BL、および電源線SLに与えられる各信号の変化について示すものである。図4に示す期間p3は、図3に示す期間p3の状態をそのまま維持していることを表す。
次に、本実施の形態で示したメモリセル100の断面図について、図5乃至図6を用いて説明を行う。
本実施の形態では、本発明の一態様に係る半導体装置が有する、メモリセルの回路構成およびその動作について、図7乃至図11を参照して説明する。
図7は、本発明の一態様であるメモリセル101の回路図である。
次に、図8を用いて、メモリセル101の動作の一例について説明する。図8(A)及至(D)には、メモリセル101の動作を模式的に示す。なお、図8(A)乃至(D)では、トランジスタ111乃至113をスイッチとして図示している。
図9に示すタイミングチャート図は、図7で示したメモリセル101にデータを書き込む際の、書き込みワード線WWL1、書き込みワード線WWL2、読み出しワード線RWL、ノードFN1、ノードFN2、ビット線BL、および電源線SLに与えられる各信号の変化について示すものである。
図10に示すタイミングチャート図は、図9に示すタイミングチャートでノードFN1に書き込まれた電位を読み出す際の、書き込みワード線WWL1、書き込みワード線WWL2、読み出しワード線RWL、ノードFN1、ノードFN2、ビット線BL、および電源線SLに与えられる各信号の変化について示すものである。図10に示す期間p3は、図9に示す期間p3の状態をそのまま維持している。
次に、本実施の形態で示したメモリセル101の断面図について、図11を用いて説明を行う。
本実施の形態では、上記実施の形態に示したトランジスタ111乃至113に適用可能な酸化物半導体トランジスタについて説明を行う。なお、以下では、トランジスタ111を例にあげて説明を行うが、トランジスタ112、113についても、同じ説明を適用することが可能である。
<半導体装置の構成例>
基板640は、単なる支持材料に限らず、他のトランジスタなどのデバイスが形成された基板であってもよい。この場合、トランジスタ111のゲート電極673、ソース電極671、およびドレイン電極672の一つは、上記の他のデバイスと電気的に接続されていてもよい。
絶縁膜652は、基板640からの不純物の拡散を防止する役割を有するほか、酸化物半導体660に酸素を供給する役割を担うことができる。したがって、絶縁膜652は酸素を含む絶縁膜であることが好ましく、化学量論組成よりも多い酸素を含む絶縁膜であることがより好ましい。例えば、TDS(Thermal Desorption Spectroscopy)法にて、酸素原子に換算しての酸素の放出量が1.0×1019atoms/cm3以上である膜とする。なお、上記TDS分析時における膜の表面温度としては100℃以上700℃以下、または100℃以上500℃以下の範囲が好ましい。また、上述のように基板640が他のデバイスが形成された基板である場合、絶縁膜652は、表面が平坦になるようにCMP(Chemical Mechanical Polishing)法等で平坦化処理を行うことが好ましい。
酸化物半導体660は、代表的には、In−Ga酸化物、In−Zn酸化物、In−M−Zn酸化物(Mは、Ti、Ga、Y、Zr、La、Ce、Nd、SnまたはHf)がある。とくに、酸化物半導体660としては、In−M−Zn酸化物(Mは、Ti、Ga、Y、Zr、La、Ce、Nd、SnまたはHf)を用いると好ましい。
次に、酸化物半導体膜の構造について説明する。
ゲート電極673は、クロム(Cr)、銅(Cu)、アルミニウム(Al)、金(Au)、銀(Ag)、亜鉛(Zn)、モリブデン(Mo)、タンタル(Ta)、チタン(Ti)、タングステン(W)、マンガン(Mn)、ニッケル(Ni)、鉄(Fe)、コバルト(Co)、ルテニウム(Ru)から選ばれた金属元素、上述した金属元素を成分とする合金、または上述した金属元素を組み合わせた合金等を用いて形成することができる。また、ゲート電極673は、一層構造でも、二層以上の積層構造としてもよい。例えば、シリコンを含むアルミニウム膜の単層構造、アルミニウム膜上にチタン膜を積層する二層構造、窒化チタン膜上にチタン膜を積層する二層構造、窒化チタン膜上にタングステン膜を積層する二層構造、窒化タンタル膜または窒化タングステン膜上にタングステン膜を積層する二層構造、チタン膜と、そのチタン膜上にアルミニウム膜を積層し、さらにその上にチタン膜を形成する三層構造、Cu−Mn合金膜の単層構造、Cu−Mn合金膜上にCu膜を積層する二層構造、Cu−Mn合金膜上にCu膜を積層し、さらにその上にCu−Mn合金膜を積層する三層構造等がある。特にCu−Mn合金膜は、電気抵抗が低く、且つ、酸素を含む絶縁膜との界面に酸化マンガンを形成し、Cuの拡散を防ぐことができるため好ましい。
ゲート絶縁膜653には、酸化アルミニウム、酸化マグネシウム、酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、窒化シリコン、酸化ガリウム、酸化ゲルマニウム、酸化イットリウム、酸化ジルコニウム、酸化ランタン、酸化ネオジム、酸化ハフニウムおよび酸化タンタルを一種以上含む絶縁膜を用いることができる。また、ゲート絶縁膜653は上記材料の積層であってもよい。なお、ゲート絶縁膜653に、ランタン(La)、窒素、ジルコニウム(Zr)などを、不純物として含んでいてもよい。
ソース電極671およびドレイン電極672は、ゲート電極673と同様の材料で作製することができる。特にCu−Mn合金膜は、電気抵抗が低く、且つ、酸化物半導体660との界面に酸化マンガンを形成し、Cuの拡散を防ぐことができるため好ましい。
絶縁膜654は、酸素、水素、水、アルカリ金属、アルカリ土類金属等のブロッキングできる機能を有する。絶縁膜654を設けることで、酸化物半導体660からの酸素の外部への拡散と、外部から酸化物半導体660への水素、水等の入り込みを防ぐことができる。絶縁膜654としては、例えば、窒化物絶縁膜を用いることができる。該窒化物絶縁膜としては、窒化シリコン、窒化酸化シリコン、窒化アルミニウム、窒化酸化アルミニウム等がある。なお、酸素、水素、水、アルカリ金属、アルカリ土類金属等のブロッキング効果を有する窒化物絶縁膜の代わりに、酸素、水素、水等のブロッキング効果を有する酸化物絶縁膜を設けてもよい。酸素、水素、水等のブロッキング効果を有する酸化物絶縁膜としては、酸化アルミニウム、酸化窒化アルミニウム、酸化ガリウム、酸化窒化ガリウム、酸化イットリウム、酸化窒化イットリウム、酸化ハフニウム、酸化窒化ハフニウム等がある。
また、絶縁膜654上には絶縁膜655が形成されていることが好ましい。当該絶縁膜には、酸化マグネシウム、酸化シリコン、酸化窒化シリコン、窒化酸化シリコン、窒化シリコン、酸化ガリウム、酸化ゲルマニウム、酸化イットリウム、酸化ジルコニウム、酸化ランタン、酸化ネオジム、酸化ハフニウムおよび酸化タンタルを一種以上含む絶縁膜を用いることができる。また、当該絶縁膜は上記材料の積層であってもよい。
なお、図12において、トランジスタのゲート電極が1つ設けられている場合の例を示したが、本発明の一態様は、これに限定されない。トランジスタに複数のゲート電極が設けられていてもよい。一例として、図12に示したトランジスタ111に、第2のゲート電極として導電膜674が設けられている例を、図13(A)乃至図13(D)に示す。図13(A)は上面図であり、図13(A)に示す一点鎖線Y1−Y2方向の断面が図13(B)に相当し、図13(A)に示す一点鎖線X1−X2方向の断面が図13(C)に相当し、図13(A)に示す一点鎖線X3−X4方向の断面が図13(D)に相当する。なお、図13(A)乃至図13(D)では、図の明瞭化のために一部の要素を拡大、縮小、または省略して図示している。
本実施の形態では、実施の形態1に示したメモリセルを適用することが可能な半導体装置の一例について、図15乃至図18を用いて説明を行う。
図15は、図1で説明したメモリセル100を有する、半導体装置500の構成例を示すブロック図である。なお、半導体装置500に適用可能なメモリセルは、これに限定されず、実施の形態1に示した他のメモリセル100や実施の形態2に示したメモリセル101も適用可能である。
図16は、図15で説明した行選択ドライバ502の構成例を示すブロック図である。
図17は、図15で説明した列選択ドライバ503の構成例を示すブロック図である。
図18は、図15で説明したA/Dコンバータ504の構成例を示すブロック図である。
本実施の形態では、上述の実施の形態で説明した半導体装置を電子部品に適用する例、および該電子部品を具備する電子機器に適用する例について、図19、図20を用いて説明する。
本実施の形態では、実施の形態1および実施の形態2で示した、トランジスタ111、トランジスタ112およびトランジスタ113に適用可能なトランジスタの構成について図を用いて説明する。
図21に、トランジスタ111乃至113に適用可能な、トランジスタ394およびトランジスタ390を示す。
次に、実施の形態1および実施の形態2で示したトランジスタ111乃至113に適用可能な、トランジスタ450について、図24を用いて説明する。
本実施の形態では、実施の形態1および実施の形態2で示した、トランジスタ111乃至113に適用可能なトランジスタの変形例について、図37乃至図39を用いて説明する。図37に示すトランジスタは、基板821上の絶縁膜824上に形成された酸化物半導体膜828と、酸化物半導体膜828に接する絶縁膜837と、絶縁膜837と接し且つ酸化物半導体膜828と重畳する導電膜840と、を有する。なお、絶縁膜837は、ゲート絶縁膜としての機能を有する。また、導電膜840は、ゲート電極としての機能を有する。
101 メモリセル
111 トランジスタ
112 トランジスタ
113 トランジスタ
114 トランジスタ
115 トランジスタ
116 容量素子
116a 容量素子
117 容量素子
261 導電膜
266 酸化物半導体膜
268 導電膜
270 導電膜
272 絶縁膜
274 導電膜
362 基板
364 絶縁膜
366 酸化物半導体膜
366a 領域
366b 領域
366c 領域
366d 領域
366e オフセット領域
368 導電膜
370 導電膜
372 絶縁膜
372a 絶縁膜
374 導電膜
374a 導電膜
376 絶縁膜
390 トランジスタ
394 トランジスタ
402 基板
404 絶縁膜
406 酸化物半導体膜
408 絶縁膜
410 導電膜
412 導電膜
414 導電膜
416 絶縁膜
418 絶縁膜
440a 開口部
440b 開口部
450 トランジスタ
500 半導体装置
501 メモリセルアレイ
502 行選択ドライバ
503 列選択ドライバ
504 A/Dコンバータ
517 デコーダ
518 制御回路
521 デコーダ
522 ラッチ回路
523 D/Aコンバータ
524 スイッチ回路
525 トランジスタ
531 コンパレータ
532 エンコーダ
533 ラッチ回路
534 バッファ
640 基板
652 絶縁膜
653 ゲート絶縁膜
654 絶縁膜
655 絶縁膜
660 酸化物半導体
661 酸化物半導体
662 酸化物半導体
663 酸化物半導体
671 ソース電極
672 ドレイン電極
673 ゲート電極
674 導電膜
700 電子部品
701 リード
702 プリント基板
703 半導体装置
704 実装基板
821 基板
824 絶縁膜
828 酸化物半導体膜
828a 領域
828b 領域
828c 領域
828d 領域
828e 領域
828f 領域
828g 領域
837 絶縁膜
840 導電膜
840a 導電膜
840b 導電膜
846 絶縁膜
847 絶縁膜
856 導電膜
857 導電膜
862 絶縁膜
901 筐体
902 筐体
903a 表示部
903b 表示部
904 選択ボタン
905 キーボード
910 電子書籍端末
911 筐体
912 筐体
913 表示部
914 表示部
915 軸部
916 電源
917 操作キー
918 スピーカー
921 筐体
922 表示部
923 スタンド
924 リモコン操作機
930 本体
931 表示部
932 スピーカー
933 マイク
934 操作ボタン
941 本体
942 表示部
943 操作スイッチ
1000 基板
1001 素子分離層
1002 側壁絶縁層
1003 不純物領域
1004 ゲート絶縁膜
1005 ゲート電極
1006 絶縁膜
1011 キャパシタ電極
1012 キャパシタ電極
1013 キャパシタ絶縁膜
1014 キャパシタ電極
1015 キャパシタ絶縁膜
1016 キャパシタ電極
1021 プラグ
1024 プラグ
1029 プラグ
1031 配線
1033 配線
1036 配線
1041 配線
1042 配線
1043 配線
Claims (6)
- 第1乃至第5のトランジスタと、
第1及び第2のノードと、
容量素子と、
ビット線と、
電源線と、を有し、
前記第1のノードは、前記第1のトランジスタを介して、Mビットからなる第1のデータが与えられ(Mは1以上の自然数)、
前記第1のノードは、前記容量素子の第1の電極に電気的に接続され、
前記第1のノードは、前記第5のトランジスタのゲートに電気的に接続され、
前記第2のノードは、前記第2のトランジスタを介して、Nビットからなる第2のデータが与えられ(Nは1以上の自然数)、
前記第2のノードは、前記第3のトランジスタを介して、第1の電位が与えられ、
前記第2のノードは、前記容量素子の第2の電極に電気的に接続され、
前記第5のトランジスタのソース及びドレインの一方は、前記電源線に電気的に接続され、
前記第5のトランジスタのソース及びドレインの他方は、前記第4のトランジスタを介して、前記ビット線に電気的に接続されることを特徴とする、M+Nビットのデータの書き込み動作と読み出し動作が可能な半導体装置。 - 請求項1において、
前記第1乃至第3のトランジスタは、半導体層に酸化物半導体を有する、ことを特徴とする半導体装置。 - 請求項1又は請求項2に記載の半導体装置の駆動方法であって、
前記書き込み動作は、
前記第1及び第3のトランジスタをオン状態にして、前記第1のノードに前記第1のデータを与える第1のステップと、
前記第2のトランジスタをオン状態にして、前記第1及び第3のトランジスタをオフ状態にして、前記第2のノードに前記第2のデータを与える第2のステップと、
前記第1及び第2のノードを電気的に浮遊状態にする第3のステップと、を有し、
前記読み出し動作は、
前記電源線と前記ビット線との間に電位差を与える第4のステップと、
前記ビット線を電気的に浮遊状態にする第5のステップと、
前記第4のトランジスタをオン状態にして、前記ビット線の充電を行う第6のステップと、を有する。 - 第1乃至第4のトランジスタと、
第1及び第2のノードと、
第1及び第2の容量素子と、
ビット線と、
電源線と、を有し、
前記第1のノードは、前記第1のトランジスタを介して、Mビットからなる第1のデータが与えられ(Mは1以上の自然数)、
前記第1のノードは、前記第1の容量素子の第1の電極に電気的に接続され、
前記第1のノードは、前記第2の容量素子の第1の電極に電気的に接続され、
前記第1のノードは、前記第4のトランジスタのゲートに電気的に接続され、
前記第2のノードは、前記第2のトランジスタを介して、Nビットからなる第2のデータが与えられ(Nは1以上の自然数)、
前記第2のノードは、前記第3のトランジスタを介して、第1の電位が与えられ、
前記第2のノードは、前記第1の容量素子の第2の電極に電気的に接続され、
前記第4のトランジスタのソース及びドレインの一方は、前記電源線に電気的に接続され、
前記第4のトランジスタのソース及びドレインの他方は、前記ビット線に電気的に接続されることを特徴とする、M+Nビットのデータの書き込み動作と読み出し動作が可能な半導体装置。 - 請求項4において、
前記第1乃至第3のトランジスタは、半導体層に酸化物半導体を有する、ことを特徴とする半導体装置。 - 請求項4又は請求項5に記載の半導体装置の駆動方法であって、
前記書き込み動作は、
前記第1及び第3のトランジスタをオン状態にして前記第1のノードに前記第1のデータを与え、且つ、前記第2の容量素子の第2の電極に第2の電位を与える第1のステップと、
前記第2のトランジスタをオン状態にして、前記第1及び第3のトランジスタをオフ状態にして、前記第2のノードに前記第2のデータを与える第2のステップと、
前記第1及び第2のノードを電気的に浮遊状態にする第3のステップと、を有し、
前記読み出し動作は、
前記電源線と前記ビット線との間に電位差を与える第4のステップと、
前記ビット線を電気的に浮遊状態にする第5のステップと、
前記第2の容量素子の第2の電極に第3の電位を与え、前記ビット線の充電または放電を行う第6のステップと、を有する。
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US9672873B2 (en) | 2017-06-06 |
US20160267950A1 (en) | 2016-09-15 |
US9349418B2 (en) | 2016-05-24 |
JP2018195370A (ja) | 2018-12-06 |
JP6634124B2 (ja) | 2020-01-22 |
JP6385819B2 (ja) | 2018-09-05 |
US20150187775A1 (en) | 2015-07-02 |
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