JP2015050344A - 成膜方法及び成膜装置 - Google Patents
成膜方法及び成膜装置 Download PDFInfo
- Publication number
- JP2015050344A JP2015050344A JP2013181383A JP2013181383A JP2015050344A JP 2015050344 A JP2015050344 A JP 2015050344A JP 2013181383 A JP2013181383 A JP 2013181383A JP 2013181383 A JP2013181383 A JP 2013181383A JP 2015050344 A JP2015050344 A JP 2015050344A
- Authority
- JP
- Japan
- Prior art keywords
- film
- vaporizer
- film forming
- pmda
- raw material
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000008021 deposition Effects 0.000 title claims abstract description 4
- 238000000151 deposition Methods 0.000 title abstract description 10
- 239000006200 vaporizer Substances 0.000 claims abstract description 84
- 238000000034 method Methods 0.000 claims abstract description 68
- 239000012535 impurity Substances 0.000 claims abstract description 48
- 230000008569 process Effects 0.000 claims abstract description 21
- 239000000178 monomer Substances 0.000 claims abstract description 13
- 238000006116 polymerization reaction Methods 0.000 claims abstract description 10
- 238000007740 vapor deposition Methods 0.000 claims abstract description 9
- WFDIJRYMOXRFFG-UHFFFAOYSA-N acetic acid anhydride Natural products CC(=O)OC(C)=O WFDIJRYMOXRFFG-UHFFFAOYSA-N 0.000 claims description 210
- QTBSBXVTEAMEQO-UHFFFAOYSA-N acetic acid Substances CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 137
- 239000002994 raw material Substances 0.000 claims description 96
- 229920001721 polyimide Polymers 0.000 claims description 41
- 235000012431 wafers Nutrition 0.000 claims description 34
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 13
- 239000011261 inert gas Substances 0.000 claims description 11
- 150000004985 diamines Chemical class 0.000 claims description 10
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 5
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical group C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 3
- 239000011575 calcium Substances 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 239000011133 lead Substances 0.000 claims description 3
- 239000011777 magnesium Substances 0.000 claims description 3
- 239000011734 sodium Substances 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 2
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims description 2
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 claims description 2
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 2
- 229920002396 Polyurea Polymers 0.000 claims description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 229910052793 cadmium Inorganic materials 0.000 claims description 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 2
- 229910052791 calcium Inorganic materials 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 229910017052 cobalt Inorganic materials 0.000 claims description 2
- 239000010941 cobalt Substances 0.000 claims description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052744 lithium Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 229920000343 polyazomethine Polymers 0.000 claims description 2
- 229920006264 polyurethane film Polymers 0.000 claims description 2
- 229910052700 potassium Inorganic materials 0.000 claims description 2
- 239000011591 potassium Substances 0.000 claims description 2
- 125000006160 pyromellitic dianhydride group Chemical group 0.000 claims description 2
- 229910052708 sodium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims description 2
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims 13
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims 1
- 125000000218 acetic acid group Chemical group C(C)(=O)* 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 claims 1
- 239000011701 zinc Substances 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- 230000008016 vaporization Effects 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract description 2
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 138
- 239000007789 gas Substances 0.000 description 85
- 230000007246 mechanism Effects 0.000 description 62
- 239000012159 carrier gas Substances 0.000 description 33
- 238000010926 purge Methods 0.000 description 32
- 238000004140 cleaning Methods 0.000 description 18
- 238000011068 loading method Methods 0.000 description 17
- 238000006243 chemical reaction Methods 0.000 description 13
- 239000002318 adhesion promoter Substances 0.000 description 12
- 238000003860 storage Methods 0.000 description 12
- 238000010586 diagram Methods 0.000 description 9
- 230000001965 increasing effect Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 9
- 239000004642 Polyimide Substances 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000012545 processing Methods 0.000 description 8
- 238000001000 micrograph Methods 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 230000003028 elevating effect Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 229910001220 stainless steel Inorganic materials 0.000 description 4
- 239000010935 stainless steel Substances 0.000 description 4
- 230000002411 adverse Effects 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 125000005442 diisocyanate group Chemical group 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000011572 manganese Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 238000000859 sublimation Methods 0.000 description 2
- 230000008022 sublimation Effects 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- ZNZYKNKBJPZETN-WELNAUFTSA-N Dialdehyde 11678 Chemical compound N1C2=CC=CC=C2C2=C1[C@H](C[C@H](/C(=C/O)C(=O)OC)[C@@H](C=C)C=O)NCC2 ZNZYKNKBJPZETN-WELNAUFTSA-N 0.000 description 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 description 1
- 239000006087 Silane Coupling Agent Substances 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/32056—Deposition of conductive or semi-conductive organic layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67346—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders characterized by being specially adapted for supporting a single substrate or by comprising a stack of such individual supports
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Formation Of Insulating Films (AREA)
- Chemical Vapour Deposition (AREA)
- Manufacture Of Macromolecular Shaped Articles (AREA)
Abstract
【解決手段】複数の原料モノマーを、各々対応する気化器内で気化させて成膜装置内に供給し、蒸着重合によって下地上に有機膜を成膜する成膜方法であって、前記蒸着重合の前に、前記複数の原料モノマーのうちの少なくとも1つの原料モノマー中の不純物を除去する、不純物除去工程を有する、成膜方法。
【選択図】図1
Description
前記蒸着重合の前に、前記複数の原料モノマーのうちの少なくとも1つの原料モノマー中の不純物を除去する、不純物除去工程を有する、成膜方法。
図1に、本実施形態に係る成膜装置の一例の概略図を示す。また、図2に、図1の成膜装置のローディングエリア内の様子を説明するための概略図を示す。さらに、図3に、本実施形態に係るボートの一例の概略図を示す。
次に、本実施形態に係る成膜装置を用いた成膜方法について説明する。図5に、本実施形態に係る成膜方法における各々の工程の手順を説明するためのフロー図を示す。
従来法によるPMDA原料中の不純物除去方法の問題点を確認した実施形態について、説明する。
PMDA原料中の不純物を除去することによって、PMDAを断続的に一定量成膜装置内に供給できることを確認した実施形態について、説明する。
本実施形態の成膜方法における、キャリアガスの流量と酢酸及び/又は無水酢酸成分の除去効率との間の関係を確認した実施形態について、説明する。
本実施形態の成膜方法における、キャリアガス圧と酢酸及び/又は無水酢酸成分の除去効率との間の関係を確認した実施形態について、説明する。
本実施形態の成膜方法における、温度と酢酸及び/又は無水酢酸成分の除去効率との間の関係を確認した実施形態について、説明する。
20 載置台
30 筐体
31 ベースプレート
40 ローディングエリア
60 成膜ユニット
61 反応管
62 ヒータ
70 供給機構
71 気化器
72 インジェクタ
73 供給管
75 供給孔
76 開口
77 バルブ
78 ガスケットフィルタ
79 圧力計
80 キャリアガス供給管
81 バルブ
82 加熱制御部
83 トレー
100 密着促進剤供給機構
110 パージガス供給機構
115 排気機構
120 クリーニングガス供給機構
130 制御部
W ウェハ
Claims (18)
- 複数の原料モノマーを、各々対応する気化器内で気化させて成膜装置内に供給し、蒸着重合によって下地上に有機膜を成膜する成膜方法であって、
前記蒸着重合の前に、前記複数の原料モノマーのうちの少なくとも1つの原料モノマー中の不純物を除去する、不純物除去工程を有する、成膜方法。 - 前記不純物除去工程は、前記不純物を揮発除去する工程を含む、
請求項1に記載の成膜方法。 - 前記揮発除去する工程は、減圧下で、不活性ガスを供給しながら実施される、請求項2に記載の成膜方法。
- 前記不純物除去工程は、前記不純物を除去する前記原料モノマーが充填された前記気化器内で実施される、請求項1乃至3のいずれか一項に記載の成膜方法。
- 前記有機膜は、ポリイミド膜、ポリウレア膜、ポリウレタン膜及びポリアゾメチン膜の群から選択される有機膜である、
請求項1乃至4のいずれか一項に記載の成膜方法。 - 前記有機膜は酸二無水物とジアミンとを蒸着重合したポリイミド膜であり、
前記不純物は、前記酸二無水物中の酢酸及び/又は無水酢酸である、
請求項5に記載の成膜方法。 - 前記不純物除去工程により、前記酢酸及び/又は無水酢酸の濃度を400ppm以下にする、
請求項6に記載の成膜方法。 - 前記不純物除去工程は、120℃〜180℃の範囲内で実施される、
請求項6又は7に記載の成膜方法。 - 前記気化器の内部には、前記原料モノマーを載置する、1つのトレー、又は、鉛直方向に所定の間隔で配置された複数のトレーを有する、請求項1乃至7のいずれか一項に記載の成膜方法。
- 酸二無水物とジアミンとを蒸着重合させることで、シリコンウエハ上にポリイミド膜を成膜する成膜装置であって、前記成膜装置は、
前記シリコンウエハを載置する載置部と、
前記酸二無水物が載置され、前記酸二無水物を気化して前記載置部に前記酸二無水物を供給する第1の気化器と、
前記ジアミンが載置され、前記ジアミンを気化して前記載置部に前記ジアミンを供給する第2の気化器と、
少なくとも前記第1の気化器に不活性ガスを供給する不活性ガス供給部と、
少なくとも前記第1の気化器内を排気する排気部と、
前記第1の気化器、前記第2の気化器、前記不活性ガス供給部及び前記排気部の作動を制御する制御部と、
を有し、
前記制御部は、
前記酸二無水物が載置された前記第1の気化器に、前記不活性ガスを供給するように前記不活性ガス供給部を制御すると共に、前記第1の気化器内を排気するように前記排気部を制御することによって、前記第1の気化器内で前記酸二無水物中の酢酸及び/又は無水酢酸を除去し、かつ、
前記酢酸及び/又は無水酢酸が除去された前記酸二無水物と、前記第2の気化器に載置されたジアミンと、を前記載置部へと供給するように、各々、前記第1の気化器及び前記第2の気化器を制御する、
成膜装置。 - 前記第1の気化器内に載置される前記酸二無水物は、アルミニウム、ホウ素、カルシウム、カドミウム、コバルト、クロム、銅、鉄、カリウム、リチウム、マグネシウム、マンガン、ナトリウム、ニッケル、鉛、アンチモン、チタン、バナジウム及び亜鉛の濃度が100ppb以下である、
請求項10に記載の成膜装置。 - 前記制御部は、前記酢酸及び/又は無水酢酸の濃度が400ppm以下となるまで、前記酸二無水物中の前記酢酸及び/又は無水酢酸を除去するよう、前記不活性ガス供給部及び前記排気部を制御する、
請求項10又は11に記載の成膜装置。 - 前記酸二無水物は、ピロメリット酸二無水物であり、前記ジアミンは、4,4'−オキシジアニリンである、
請求項10乃至12のいずれか一項に記載の成膜装置。 - 前記前記酢酸及び/又は無水酢酸の除去時の前記第1の気化器内の温度は、120℃〜180℃の範囲内である、
請求項10乃至13のいずれか一項に記載の成膜装置。 - 前記前記酢酸及び/又は無水酢酸の除去時の前記不活性ガスの流量は、8.33×10−7m3/s〜8.33×10−6m3/sの範囲内である、
請求項10乃至14のいずれか一項に記載の成膜装置。 - 前記前記酢酸及び/又は無水酢酸の除去時の前記第1の気化器内の圧力は、1.33×104Pa〜2.66×104Paの範囲内である、
請求項10乃至15のいずれか一項に記載の成膜装置。 - 前記第1の気化器の内部には、前記酸二無水物を載置する、1つのトレー、又は、鉛直方向に所定の間隔で配置された複数のトレーを有する、請求項10乃至16のいずれか一項に記載の成膜装置。
- 前記載置部は、複数の前記シリコンウエハを水平状態で上下方向に所定の間隔で保持するボートを有する、
請求項10乃至17のいずれか一項に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013181383A JP6111171B2 (ja) | 2013-09-02 | 2013-09-02 | 成膜方法及び成膜装置 |
US14/463,735 US9786494B2 (en) | 2013-09-02 | 2014-08-20 | Film formation method and film formation apparatus |
TW103129423A TWI610973B (zh) | 2013-09-02 | 2014-08-26 | 成膜方法及成膜裝置 |
KR1020140115209A KR101899187B1 (ko) | 2013-09-02 | 2014-09-01 | 성막 방법 및 성막 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2013181383A JP6111171B2 (ja) | 2013-09-02 | 2013-09-02 | 成膜方法及び成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2015050344A true JP2015050344A (ja) | 2015-03-16 |
JP6111171B2 JP6111171B2 (ja) | 2017-04-05 |
Family
ID=52583840
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013181383A Expired - Fee Related JP6111171B2 (ja) | 2013-09-02 | 2013-09-02 | 成膜方法及び成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US9786494B2 (ja) |
JP (1) | JP6111171B2 (ja) |
KR (1) | KR101899187B1 (ja) |
TW (1) | TWI610973B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024122171A1 (ja) * | 2022-12-05 | 2024-06-13 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、及びプログラム |
Families Citing this family (36)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI509695B (zh) | 2010-06-10 | 2015-11-21 | Asm Int | 使膜選擇性沈積於基板上的方法 |
US9112003B2 (en) | 2011-12-09 | 2015-08-18 | Asm International N.V. | Selective formation of metallic films on metallic surfaces |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
TWI661072B (zh) | 2014-02-04 | 2019-06-01 | 荷蘭商Asm Ip控股公司 | 金屬、金屬氧化物與介電質的選擇性沈積 |
US10047435B2 (en) | 2014-04-16 | 2018-08-14 | Asm Ip Holding B.V. | Dual selective deposition |
US9490145B2 (en) | 2015-02-23 | 2016-11-08 | Asm Ip Holding B.V. | Removal of surface passivation |
US10428421B2 (en) | 2015-08-03 | 2019-10-01 | Asm Ip Holding B.V. | Selective deposition on metal or metallic surfaces relative to dielectric surfaces |
US10566185B2 (en) | 2015-08-05 | 2020-02-18 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10121699B2 (en) | 2015-08-05 | 2018-11-06 | Asm Ip Holding B.V. | Selective deposition of aluminum and nitrogen containing material |
US10814349B2 (en) | 2015-10-09 | 2020-10-27 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10343186B2 (en) | 2015-10-09 | 2019-07-09 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US10695794B2 (en) | 2015-10-09 | 2020-06-30 | Asm Ip Holding B.V. | Vapor phase deposition of organic films |
US9981286B2 (en) | 2016-03-08 | 2018-05-29 | Asm Ip Holding B.V. | Selective formation of metal silicides |
US10204782B2 (en) | 2016-04-18 | 2019-02-12 | Imec Vzw | Combined anneal and selective deposition process |
US10551741B2 (en) | 2016-04-18 | 2020-02-04 | Asm Ip Holding B.V. | Method of forming a directed self-assembled layer on a substrate |
US11081342B2 (en) | 2016-05-05 | 2021-08-03 | Asm Ip Holding B.V. | Selective deposition using hydrophobic precursors |
US10373820B2 (en) | 2016-06-01 | 2019-08-06 | Asm Ip Holding B.V. | Deposition of organic films |
US10453701B2 (en) | 2016-06-01 | 2019-10-22 | Asm Ip Holding B.V. | Deposition of organic films |
US10014212B2 (en) | 2016-06-08 | 2018-07-03 | Asm Ip Holding B.V. | Selective deposition of metallic films |
US9803277B1 (en) | 2016-06-08 | 2017-10-31 | Asm Ip Holding B.V. | Reaction chamber passivation and selective deposition of metallic films |
US11430656B2 (en) | 2016-11-29 | 2022-08-30 | Asm Ip Holding B.V. | Deposition of oxide thin films |
US11094535B2 (en) | 2017-02-14 | 2021-08-17 | Asm Ip Holding B.V. | Selective passivation and selective deposition |
US11501965B2 (en) | 2017-05-05 | 2022-11-15 | Asm Ip Holding B.V. | Plasma enhanced deposition processes for controlled formation of metal oxide thin films |
CN115233183A (zh) | 2017-05-16 | 2022-10-25 | Asm Ip 控股有限公司 | 电介质上氧化物的选择性peald |
US10900120B2 (en) | 2017-07-14 | 2021-01-26 | Asm Ip Holding B.V. | Passivation against vapor deposition |
JP6953999B2 (ja) * | 2017-10-26 | 2021-10-27 | 東京エレクトロン株式会社 | 半導体装置の製造方法及び基板処理装置 |
JP7146690B2 (ja) | 2018-05-02 | 2022-10-04 | エーエスエム アイピー ホールディング ビー.ブイ. | 堆積および除去を使用した選択的層形成 |
JP2020056104A (ja) | 2018-10-02 | 2020-04-09 | エーエスエム アイピー ホールディング ビー.ブイ. | 選択的パッシベーションおよび選択的堆積 |
CN109182758B (zh) * | 2018-10-22 | 2023-06-02 | 天齐锂业(江苏)有限公司 | 一种低品位锂源制备超薄金属锂带的方法及系统 |
KR102179271B1 (ko) * | 2019-01-11 | 2020-11-16 | 캐논 톡키 가부시키가이샤 | 성막장치, 전자 디바이스 제조장치, 성막방법, 및 전자 디바이스 제조방법 |
US11965238B2 (en) | 2019-04-12 | 2024-04-23 | Asm Ip Holding B.V. | Selective deposition of metal oxides on metal surfaces |
US11139163B2 (en) | 2019-10-31 | 2021-10-05 | Asm Ip Holding B.V. | Selective deposition of SiOC thin films |
TW202140832A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 氧化矽在金屬表面上之選擇性沉積 |
TW202204658A (zh) | 2020-03-30 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | 在兩不同表面上同時選擇性沉積兩不同材料 |
TW202140833A (zh) | 2020-03-30 | 2021-11-01 | 荷蘭商Asm Ip私人控股有限公司 | 相對於金屬表面在介電表面上之氧化矽的選擇性沉積 |
CN114163449B (zh) * | 2021-12-20 | 2023-03-17 | 大连奇凯医药科技有限公司 | 1,2,4,5-环己烷四羧酸二酐的制备及表征方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07204402A (ja) * | 1994-01-24 | 1995-08-08 | Ulvac Japan Ltd | 真空精製装置及びその方法 |
JPH1092800A (ja) * | 1996-09-12 | 1998-04-10 | Ulvac Japan Ltd | 蒸発源および蒸発源を備えた真空処理室、有機化合物膜の成膜方法 |
JP2000021866A (ja) * | 1998-07-07 | 2000-01-21 | Ulvac Corp | 半導体製造装置およびポリイミド膜の形成方法 |
US20020188140A1 (en) * | 2001-05-16 | 2002-12-12 | Shiao-Jung Chu | Purification method for obtaining high-purity pmda |
JP2008174485A (ja) * | 2007-01-18 | 2008-07-31 | Mitsubishi Gas Chem Co Inc | 晶析方法 |
JP2011009379A (ja) * | 2009-06-24 | 2011-01-13 | Tokyo Electron Ltd | 気化器 |
JP2012052669A (ja) * | 2005-03-16 | 2012-03-15 | Advanced Technology Materials Inc | 固体原料から試薬を送出するためのシステム |
JP2012146924A (ja) * | 2011-01-14 | 2012-08-02 | Tokyo Electron Ltd | 成膜装置 |
Family Cites Families (54)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3542814A (en) * | 1968-07-12 | 1970-11-24 | Koppers Co Inc | Pyromellitic dianhydride purification |
JPS54106599A (en) * | 1978-02-09 | 1979-08-21 | Hitachi Chem Co Ltd | Preparation of polyamide intermediate for semiconductor processing |
US4269968A (en) * | 1979-11-13 | 1981-05-26 | International Business Machines Corporation | Synthesis of polyamic acid |
US4376195A (en) * | 1982-01-07 | 1983-03-08 | E. I. Du Pont De Nemours And Company | Method of preparing high purity polyamic acids for use in electronic circuitry |
JPS61151238A (ja) * | 1984-12-25 | 1986-07-09 | Mitsubishi Gas Chem Co Inc | 感光性ポリイミド前駆体及びその製造方法 |
US4845181A (en) * | 1987-10-28 | 1989-07-04 | President And Fellows Of Harvard College | Organic condensation polymers and method of making same |
US5066770A (en) * | 1988-04-10 | 1991-11-19 | Kanegafuchi Kagaku Kogyo Kabushiki Kaisha | Process and apparatus for manufacturing polymers |
US4906760A (en) * | 1988-08-04 | 1990-03-06 | Hoechst Celanese Corp. | Purification of anhydrides |
US5310863A (en) * | 1993-01-08 | 1994-05-10 | International Business Machines Corporation | Polyimide materials with improved physico-chemical properties |
JP3437832B2 (ja) * | 2000-03-22 | 2003-08-18 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP4866527B2 (ja) * | 2000-03-23 | 2012-02-01 | 新日鐵化学株式会社 | 昇華精製方法 |
US20030010288A1 (en) * | 2001-02-08 | 2003-01-16 | Shunpei Yamazaki | Film formation apparatus and film formation method |
US20030070451A1 (en) * | 2001-10-11 | 2003-04-17 | Luc Ouellet | Method of reducing stress-induced mechanical problems in optical components |
TWI275319B (en) * | 2002-02-05 | 2007-03-01 | Semiconductor Energy Lab | Manufacturing method and method of operating a manufacturing apparatus |
US6921062B2 (en) * | 2002-07-23 | 2005-07-26 | Advanced Technology Materials, Inc. | Vaporizer delivery ampoule |
JP2004103990A (ja) * | 2002-09-12 | 2004-04-02 | Hitachi Kokusai Electric Inc | 半導体製造装置および半導体装置の製造方法 |
JP3998241B2 (ja) * | 2002-10-18 | 2007-10-24 | キヤノン株式会社 | カーボンファイバーが固定された基体の製造方法 |
TW200426136A (en) * | 2002-11-28 | 2004-12-01 | Daicel Chem | A polyglycerine, a fatty acid ester of a polyglycerine and process for the preparations thereof |
US7211461B2 (en) * | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
DE602006010626D1 (de) * | 2005-07-21 | 2010-01-07 | Mitsubishi Gas Chemical Co | Verfahren zur Herstellung von hochreinem Pyromelliticdianhydrid |
JP4974504B2 (ja) * | 2005-10-13 | 2012-07-11 | 株式会社半導体エネルギー研究所 | 成膜装置、発光装置の作製方法 |
US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
US8354135B2 (en) * | 2008-03-17 | 2013-01-15 | Tokyo Electron Limited | Thermal processing apparatus, method for regulating temperature of thermal processing apparatus, and program |
JP5198106B2 (ja) * | 2008-03-25 | 2013-05-15 | 東京エレクトロン株式会社 | 成膜装置、及び成膜方法 |
JP2010040695A (ja) * | 2008-08-04 | 2010-02-18 | Hitachi Kokusai Electric Inc | 基板処理装置および原料補充方法 |
JP5134495B2 (ja) * | 2008-10-16 | 2013-01-30 | 東京エレクトロン株式会社 | 処理装置及び処理方法 |
JP2010192520A (ja) * | 2009-02-16 | 2010-09-02 | Elpida Memory Inc | 半導体装置の製造方法 |
JP5361467B2 (ja) * | 2009-03-13 | 2013-12-04 | 東京エレクトロン株式会社 | 気化器 |
KR101132605B1 (ko) * | 2009-03-13 | 2012-04-06 | 도쿄엘렉트론가부시키가이샤 | 기판 처리 장치, 트랩 장치, 기판 처리 장치의 제어 방법 및 트랩 장치의 제어 방법 |
WO2011013626A1 (ja) * | 2009-07-31 | 2011-02-03 | 富士フイルム株式会社 | 有機デバイス用蒸着材料及び有機デバイスの製造方法 |
KR101797253B1 (ko) * | 2009-12-04 | 2017-11-13 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 그 제조 방법 |
WO2011126076A1 (ja) * | 2010-04-09 | 2011-10-13 | 大日本印刷株式会社 | 薄膜トランジスタ基板 |
JP5254279B2 (ja) * | 2010-06-29 | 2013-08-07 | 東京エレクトロン株式会社 | トラップ装置及び基板処理装置 |
TWI516524B (zh) * | 2010-07-22 | 2016-01-11 | 宇部興產股份有限公司 | 聚醯亞胺前驅體、聚醯亞胺及製造聚醯亞胺所使用之材料 |
CN102383222B (zh) * | 2010-09-01 | 2013-05-01 | 江西先材纳米纤维科技有限公司 | 共混聚酰亚胺纳米纤维及其在电池隔膜中的应用 |
WO2012096374A1 (ja) * | 2011-01-14 | 2012-07-19 | 前久保 龍志 | ポリイミド粉体及びポリイミド溶液並びにポリイミド粉体の製造方法 |
JP5276679B2 (ja) * | 2011-02-01 | 2013-08-28 | 東京エレクトロン株式会社 | 成膜装置 |
JP5820731B2 (ja) * | 2011-03-22 | 2015-11-24 | 株式会社日立国際電気 | 基板処理装置および固体原料補充方法 |
JP5296132B2 (ja) * | 2011-03-24 | 2013-09-25 | 東京エレクトロン株式会社 | 成膜装置 |
JP5350424B2 (ja) * | 2011-03-24 | 2013-11-27 | 東京エレクトロン株式会社 | 表面処理方法 |
JP2012209393A (ja) * | 2011-03-29 | 2012-10-25 | Tokyo Electron Ltd | クリーニング方法及び成膜方法 |
US20140315012A1 (en) * | 2011-11-07 | 2014-10-23 | University Of Cincinnati | Nano-graphene sheet-filled polyimide composites and methods of making same |
JP6020239B2 (ja) * | 2012-04-27 | 2016-11-02 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2014033056A (ja) * | 2012-08-02 | 2014-02-20 | Hiroshima Univ | ポリイミド膜の成膜方法、半導体装置の製造方法及び成膜装置 |
JP5993252B2 (ja) * | 2012-09-06 | 2016-09-14 | 東京エレクトロン株式会社 | 蓋体開閉装置及びこれを用いた熱処理装置、並びに蓋体開閉方法 |
TWI554530B (zh) * | 2012-10-08 | 2016-10-21 | 國立臺灣大學 | 聚合物以及透過該聚合物製備之膠態電解質及其製備方法 |
KR101904953B1 (ko) * | 2012-11-26 | 2018-10-10 | 한국전자통신연구원 | 유기 산란층의 제조 방법 및 유기 산란층을 갖는 유기발광 다이오드 및 이의 제조 방법 |
JP5949586B2 (ja) * | 2013-01-31 | 2016-07-06 | 東京エレクトロン株式会社 | 原料ガス供給装置、成膜装置、原料の供給方法及び記憶媒体 |
US9640780B2 (en) * | 2013-03-11 | 2017-05-02 | Konica Minolta, Inc. | Gas barrier film, method for producing gas barrier film, and organic electroluminescent element |
CN105247664B (zh) * | 2013-05-31 | 2018-04-10 | 株式会社日立国际电气 | 衬底处理装置、半导体器件的制造方法及炉口盖体 |
WO2015029457A1 (en) * | 2013-09-02 | 2015-03-05 | L'air Liquide, Societe Anonyme Pour L'etude Et L'exploitation Des Procedes Georges Claude | Method for producing pyromellitic dianhydride, pyromellitic dianhydride produced by the method, and apparatus therefor |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2015133247A (ja) * | 2014-01-14 | 2015-07-23 | 日東電工株式会社 | 有機エレクトロルミネッセンス装置 |
JP2016065310A (ja) * | 2014-09-19 | 2016-04-28 | 株式会社半導体エネルギー研究所 | 成膜装置、シャドーマスク、成膜方法、クリーニング方法 |
-
2013
- 2013-09-02 JP JP2013181383A patent/JP6111171B2/ja not_active Expired - Fee Related
-
2014
- 2014-08-20 US US14/463,735 patent/US9786494B2/en active Active
- 2014-08-26 TW TW103129423A patent/TWI610973B/zh not_active IP Right Cessation
- 2014-09-01 KR KR1020140115209A patent/KR101899187B1/ko active IP Right Grant
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07204402A (ja) * | 1994-01-24 | 1995-08-08 | Ulvac Japan Ltd | 真空精製装置及びその方法 |
JPH1092800A (ja) * | 1996-09-12 | 1998-04-10 | Ulvac Japan Ltd | 蒸発源および蒸発源を備えた真空処理室、有機化合物膜の成膜方法 |
JP2000021866A (ja) * | 1998-07-07 | 2000-01-21 | Ulvac Corp | 半導体製造装置およびポリイミド膜の形成方法 |
US20020188140A1 (en) * | 2001-05-16 | 2002-12-12 | Shiao-Jung Chu | Purification method for obtaining high-purity pmda |
JP2012052669A (ja) * | 2005-03-16 | 2012-03-15 | Advanced Technology Materials Inc | 固体原料から試薬を送出するためのシステム |
JP2008174485A (ja) * | 2007-01-18 | 2008-07-31 | Mitsubishi Gas Chem Co Inc | 晶析方法 |
JP2011009379A (ja) * | 2009-06-24 | 2011-01-13 | Tokyo Electron Ltd | 気化器 |
JP2012146924A (ja) * | 2011-01-14 | 2012-08-02 | Tokyo Electron Ltd | 成膜装置 |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2024122171A1 (ja) * | 2022-12-05 | 2024-06-13 | 株式会社Kokusai Electric | 基板処理装置、半導体装置の製造方法、及びプログラム |
Also Published As
Publication number | Publication date |
---|---|
US9786494B2 (en) | 2017-10-10 |
TW201518351A (zh) | 2015-05-16 |
TWI610973B (zh) | 2018-01-11 |
KR101899187B1 (ko) | 2018-09-14 |
US20150064931A1 (en) | 2015-03-05 |
KR20150026987A (ko) | 2015-03-11 |
JP6111171B2 (ja) | 2017-04-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6111171B2 (ja) | 成膜方法及び成膜装置 | |
US9163311B2 (en) | Film forming apparatus | |
JP5774822B2 (ja) | 半導体デバイスの製造方法及び基板処理装置 | |
JP5541223B2 (ja) | 成膜方法及び成膜装置 | |
US20120269970A1 (en) | Cleaning method and film depositing method | |
TWI541901B (zh) | 基板處理方法、基板處理裝置、半導體裝置之製造方法及記錄媒體 | |
WO2011152352A1 (ja) | 半導体装置の製造方法及び基板処理装置 | |
JP2006287195A (ja) | 成膜方法、成膜装置及び記憶媒体 | |
CN103898601A (zh) | 晶种层的形成方法、硅膜的成膜方法以及成膜装置 | |
JP2009099582A (ja) | ポリシリコン膜の形成方法 | |
CN103898472A (zh) | 硅膜的成膜方法以及成膜装置 | |
JP2011054789A (ja) | 基板処理装置 | |
JP2006222265A (ja) | 基板処理装置 | |
CN110804731B (zh) | 一种原子层沉积技术生长MnxN薄膜的方法 | |
JP3432601B2 (ja) | 成膜方法 | |
JP2010109335A (ja) | シリコン酸化膜の除去方法及び処理装置 | |
JP2008166800A (ja) | 金属または金属化合物の吸着装置及び方法 | |
JP2000104172A (ja) | 成膜方法,成膜装置及び固形原料 | |
JP6327094B2 (ja) | 気相成長装置の汚染管理方法、エピタキシャルシリコンウェーハの製造方法 | |
JP2005057133A (ja) | 半導体デバイスの製造方法及び基板処理装置 | |
TW201126574A (en) | Process for production of silicon epitaxial wafer | |
JP2014045037A (ja) | 金属膜の成膜方法 | |
JP7436438B2 (ja) | 半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム | |
KR20220138805A (ko) | 아몰퍼스 실리콘막의 결정화 방법 및 성막 장치 | |
JP2023091382A (ja) | 窒化ガリウム層製造装置および窒化ガリウム層の製造方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20160127 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20161021 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20161025 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20161215 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20170307 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20170313 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 6111171 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
S533 | Written request for registration of change of name |
Free format text: JAPANESE INTERMEDIATE CODE: R313533 |
|
R350 | Written notification of registration of transfer |
Free format text: JAPANESE INTERMEDIATE CODE: R350 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
LAPS | Cancellation because of no payment of annual fees |