JP5276679B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5276679B2 JP5276679B2 JP2011019982A JP2011019982A JP5276679B2 JP 5276679 B2 JP5276679 B2 JP 5276679B2 JP 2011019982 A JP2011019982 A JP 2011019982A JP 2011019982 A JP2011019982 A JP 2011019982A JP 5276679 B2 JP5276679 B2 JP 5276679B2
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- JP
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- Prior art keywords
- gas
- trap
- exhaust
- container
- purge gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 230000008021 deposition Effects 0.000 title claims description 6
- 238000010926 purge Methods 0.000 claims abstract description 101
- 239000002994 raw material Substances 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 19
- 239000000047 product Substances 0.000 claims description 39
- 230000015572 biosynthetic process Effects 0.000 claims description 24
- 238000006243 chemical reaction Methods 0.000 claims description 7
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 5
- 150000004984 aromatic diamines Chemical class 0.000 claims description 5
- 125000003118 aryl group Chemical group 0.000 claims description 5
- 239000002244 precipitate Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000001376 precipitating effect Effects 0.000 claims description 3
- 239000012528 membrane Substances 0.000 claims 1
- 239000007789 gas Substances 0.000 description 270
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 37
- 235000012431 wafers Nutrition 0.000 description 32
- 238000000034 method Methods 0.000 description 24
- 229920001721 polyimide Polymers 0.000 description 23
- 238000001816 cooling Methods 0.000 description 18
- 238000005192 partition Methods 0.000 description 17
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 14
- 230000000052 comparative effect Effects 0.000 description 12
- 230000012447 hatching Effects 0.000 description 10
- 238000006116 polymerization reaction Methods 0.000 description 10
- 239000012159 carrier gas Substances 0.000 description 9
- 238000012545 processing Methods 0.000 description 9
- 238000007740 vapor deposition Methods 0.000 description 9
- 238000009434 installation Methods 0.000 description 8
- 239000006200 vaporizer Substances 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000014509 gene expression Effects 0.000 description 6
- 238000012423 maintenance Methods 0.000 description 6
- 238000012544 monitoring process Methods 0.000 description 6
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 5
- 239000000498 cooling water Substances 0.000 description 5
- 239000004642 Polyimide Substances 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000008016 vaporization Effects 0.000 description 4
- 239000000463 material Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 238000003860 storage Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- 101100464070 Arabidopsis thaliana PIGM gene Proteins 0.000 description 1
- 101100520635 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) PNT1 gene Proteins 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 238000009530 blood pressure measurement Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
Description
(第1の実施の形態)
最初に、本発明の第1の実施の形態に係る成膜装置について説明する。本実施の形態に係る成膜装置は、芳香族酸二無水物よりなる第1の原料を気化した第1の原料ガスと、芳香族ジアミンよりなる第2の原料を気化した第2の原料ガスとを、成膜容器内に保持されている基板に供給することによって、基板にポリイミド膜を成膜する成膜装置である。
圧力;P=10Pa
温度;T=400K
長さ;L=L1=0.004m
と仮定する。
Re=VL/ν (1)
で表されるレイノルズ数Reが、下記式(2)
Re>4000 (2)
で表されるように、4000を超えることが好ましい。ただし、νは、パージガスの動粘度(単位;m2/s)であり、400K、10Paでの値として4.05×10−5(m2/s)を用いた。
a=(kRT)0.5 (3)
で表される音速a(m/sec)を用いて、下記式(4)
Mach=V/a (4)
で表されるマッハ数Machが、下記式(5)
Mach<1 (5)
で表されるように、1未満であることが好ましい。ただし、kはボルツマン定数1.38×10−23J/K、Rは8.31J/K/molであり、上記した温度Tでは、
音速;a=4.08×102m/sec
である。
(第2の実施の形態)
次に、図15を参照し、本発明の第2の実施の形態に係る成膜装置について説明する。
圧力;P=10Pa
温度;T=400K
内径;D=D2=0.010m
と仮定する。
11 チャンバー
20 供給機構
21 第1の原料ガス供給部(第1の気化器)
22 第2の原料ガス供給部(第2の気化器)
25 真空ポンプ
30 トラップ部
50 パージガス供給部
51 圧力計
52 パージガス供給流路
55 排気流路
60 第1の開閉バルブ
80 制御部
Claims (5)
- 成膜容器内に保持されている基板に原料ガスを供給することによって、前記基板に膜を成膜する成膜装置において、
前記成膜容器に前記原料ガスを供給する供給機構と、
前記成膜容器からガスを排気する排気機構と、
前記成膜容器から前記排気機構にガスが流れる排気流路の途中に設けられており、前記原料ガスを含む生成物を析出させることによって、前記原料ガスを捕捉するトラップ部と、
前記成膜容器と前記トラップ部との間で前記排気流路に合流するように接続されており、前記排気流路にパージガスを供給するパージガス供給部と、
前記パージガス供給部から前記排気流路にパージガスが流れるパージガス供給流路の途中に設けられた圧力計と
を有し、
前記排気流路の途中に、前記成膜容器と前記トラップ部とを連通又は遮断するように設けられた開閉弁部を有し、
前記パージガス供給部は、前記開閉弁部を介して前記排気流路に合流するように接続されている、
成膜装置。 - 前記トラップ部は、
トラップ容器と、
前記トラップ容器にガスを導入するガス導入部と、
前記トラップ容器からガスを導出するガス導出部と、
前記トラップ容器の内部であって、前記ガス導入部からガスが導入される高さ位置よりも上方の高さ位置に略水平に設けられており、導入されたガスを冷却して前記生成物を析出させることによって、前記原料ガスを捕捉するトラップ板と
を有するものである、請求項1に記載の成膜装置。 - 前記排気流路の前記パージガス供給部が接続されている部分を、前記生成物が析出する反応が生ずる温度範囲よりも高い温度に加熱する加熱機構を有する、請求項1又は2に記載の成膜装置。
- 前記パージガス供給流路を流れるパージガスのレイノルズ数が4000を超えるとともに、前記パージガス供給流路を流れるパージガスのマッハ数が1未満である、請求項1から請求項3のいずれか一項に記載の成膜装置。
- 前記原料ガスは、芳香族酸二無水物及び芳香族ジアミンを含むものである、請求項1から請求項4のいずれか一項に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019982A JP5276679B2 (ja) | 2011-02-01 | 2011-02-01 | 成膜装置 |
US13/362,482 US20120192793A1 (en) | 2011-02-01 | 2012-01-31 | Film forming apparatus |
TW101102975A TWI563120B (en) | 2011-02-01 | 2012-01-31 | Film forming apparatus |
KR1020120009483A KR101576322B1 (ko) | 2011-02-01 | 2012-01-31 | 성막 장치 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011019982A JP5276679B2 (ja) | 2011-02-01 | 2011-02-01 | 成膜装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2012160614A JP2012160614A (ja) | 2012-08-23 |
JP5276679B2 true JP5276679B2 (ja) | 2013-08-28 |
Family
ID=46576268
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2011019982A Active JP5276679B2 (ja) | 2011-02-01 | 2011-02-01 | 成膜装置 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20120192793A1 (ja) |
JP (1) | JP5276679B2 (ja) |
KR (1) | KR101576322B1 (ja) |
TW (1) | TWI563120B (ja) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140116336A1 (en) * | 2012-10-26 | 2014-05-01 | Applied Materials, Inc. | Substrate process chamber exhaust |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP6254459B2 (ja) * | 2014-02-27 | 2017-12-27 | 東京エレクトロン株式会社 | 重合膜の耐薬品性改善方法、重合膜の成膜方法、成膜装置、および電子製品の製造方法 |
JP6458595B2 (ja) * | 2015-03-27 | 2019-01-30 | 東京エレクトロン株式会社 | 成膜装置及び成膜方法並びに記憶媒体 |
JP2016186111A (ja) | 2015-03-27 | 2016-10-27 | 東京エレクトロン株式会社 | 原料供給方法、原料供給装置及び記憶媒体 |
US10559451B2 (en) * | 2017-02-15 | 2020-02-11 | Applied Materials, Inc. | Apparatus with concentric pumping for multiple pressure regimes |
GB2561190A (en) * | 2017-04-04 | 2018-10-10 | Edwards Ltd | Purge gas feeding means, abatement systems and methods of modifying abatement systems |
CN107808838A (zh) * | 2017-11-13 | 2018-03-16 | 武汉华星光电半导体显示技术有限公司 | 干刻蚀装置及干刻蚀方法 |
Family Cites Families (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4036594A (en) * | 1973-12-17 | 1977-07-19 | Veba-Chemie Ag | Apparatus for recovering higher melting organic materials via fractional sublimation |
CH675459A5 (ja) * | 1988-03-09 | 1990-09-28 | Sulzer Ag | |
JP2683579B2 (ja) * | 1988-08-04 | 1997-12-03 | 東京エレクトロン株式会社 | 処理装置 |
JP3026504B2 (ja) * | 1990-10-09 | 2000-03-27 | 東京エレクトロン株式会社 | トラップ装置 |
JPH0467327U (ja) * | 1990-10-23 | 1992-06-15 | ||
JP3188726B2 (ja) * | 1991-04-16 | 2001-07-16 | 日本真空技術株式会社 | 真空排気系用凝縮性物質捕集装置 |
JPH05154301A (ja) * | 1991-12-03 | 1993-06-22 | Nippon Steel Corp | コールドトラップ装置 |
JP3262623B2 (ja) * | 1993-02-17 | 2002-03-04 | 東京エレクトロン株式会社 | 減圧処理方法及び装置 |
US6332925B1 (en) * | 1996-05-23 | 2001-12-25 | Ebara Corporation | Evacuation system |
US6153260A (en) * | 1997-04-11 | 2000-11-28 | Applied Materials, Inc. | Method for heating exhaust gas in a substrate reactor |
JPH11111705A (ja) * | 1997-10-06 | 1999-04-23 | Kokusai Electric Co Ltd | 半導体製造装置 |
US6099649A (en) * | 1997-12-23 | 2000-08-08 | Applied Materials, Inc. | Chemical vapor deposition hot-trap for unreacted precursor conversion and effluent removal |
JP3567070B2 (ja) * | 1997-12-27 | 2004-09-15 | 東京エレクトロン株式会社 | 熱処理装置及び熱処理方法 |
US6228773B1 (en) * | 1998-04-14 | 2001-05-08 | Matrix Integrated Systems, Inc. | Synchronous multiplexed near zero overhead architecture for vacuum processes |
US6733590B1 (en) * | 1999-05-03 | 2004-05-11 | Seagate Technology Llc. | Method and apparatus for multilayer deposition utilizing a common beam source |
JP2003332246A (ja) * | 2002-05-14 | 2003-11-21 | Teijin Seiki Co Ltd | センサー保護機構 |
JP5277784B2 (ja) | 2008-08-07 | 2013-08-28 | 東京エレクトロン株式会社 | 原料回収方法、トラップ機構、排気系及びこれを用いた成膜装置 |
US20110045182A1 (en) * | 2009-03-13 | 2011-02-24 | Tokyo Electron Limited | Substrate processing apparatus, trap device, control method for substrate processing apparatus, and control method for trap device |
JP2010245422A (ja) * | 2009-04-09 | 2010-10-28 | Hitachi Kokusai Electric Inc | 半導体製造装置 |
-
2011
- 2011-02-01 JP JP2011019982A patent/JP5276679B2/ja active Active
-
2012
- 2012-01-31 TW TW101102975A patent/TWI563120B/zh active
- 2012-01-31 KR KR1020120009483A patent/KR101576322B1/ko active IP Right Grant
- 2012-01-31 US US13/362,482 patent/US20120192793A1/en not_active Abandoned
Also Published As
Publication number | Publication date |
---|---|
US20120192793A1 (en) | 2012-08-02 |
KR20120089202A (ko) | 2012-08-09 |
TW201250054A (en) | 2012-12-16 |
JP2012160614A (ja) | 2012-08-23 |
TWI563120B (en) | 2016-12-21 |
KR101576322B1 (ko) | 2015-12-09 |
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