JP5296132B2 - 成膜装置 - Google Patents
成膜装置 Download PDFInfo
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- JP5296132B2 JP5296132B2 JP2011066461A JP2011066461A JP5296132B2 JP 5296132 B2 JP5296132 B2 JP 5296132B2 JP 2011066461 A JP2011066461 A JP 2011066461A JP 2011066461 A JP2011066461 A JP 2011066461A JP 5296132 B2 JP5296132 B2 JP 5296132B2
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- 230000008021 deposition Effects 0.000 title claims description 9
- 230000007246 mechanism Effects 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 81
- 239000002318 adhesion promoter Substances 0.000 claims description 73
- 230000015572 biosynthetic process Effects 0.000 claims description 71
- 238000010438 heat treatment Methods 0.000 claims description 55
- 229920001721 polyimide Polymers 0.000 claims description 55
- 239000000758 substrate Substances 0.000 claims description 46
- 238000001816 cooling Methods 0.000 claims description 32
- 238000010926 purge Methods 0.000 claims description 32
- 239000002994 raw material Substances 0.000 claims description 12
- 230000008016 vaporization Effects 0.000 claims description 10
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 2
- 239000002253 acid Substances 0.000 claims description 2
- 238000007664 blowing Methods 0.000 claims description 2
- 150000004985 diamines Chemical class 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 130
- 235000012431 wafers Nutrition 0.000 description 96
- 230000008569 process Effects 0.000 description 62
- 238000006243 chemical reaction Methods 0.000 description 22
- VLDPXPPHXDGHEW-UHFFFAOYSA-N 1-chloro-2-dichlorophosphoryloxybenzene Chemical compound ClC1=CC=CC=C1OP(Cl)(Cl)=O VLDPXPPHXDGHEW-UHFFFAOYSA-N 0.000 description 19
- 239000006087 Silane Coupling Agent Substances 0.000 description 19
- 238000012545 processing Methods 0.000 description 19
- 230000000052 comparative effect Effects 0.000 description 18
- 230000001965 increasing effect Effects 0.000 description 14
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 13
- 238000003860 storage Methods 0.000 description 13
- 238000004381 surface treatment Methods 0.000 description 11
- 238000012546 transfer Methods 0.000 description 11
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 9
- 239000012159 carrier gas Substances 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 239000004642 Polyimide Substances 0.000 description 6
- 238000006116 polymerization reaction Methods 0.000 description 6
- 238000011084 recovery Methods 0.000 description 6
- 125000003545 alkoxy group Chemical group 0.000 description 5
- 230000003028 elevating effect Effects 0.000 description 5
- 238000006358 imidation reaction Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 238000007740 vapor deposition Methods 0.000 description 4
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 125000000956 methoxy group Chemical group [H]C([H])([H])O* 0.000 description 3
- 239000000178 monomer Substances 0.000 description 3
- 239000011368 organic material Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000006200 vaporizer Substances 0.000 description 3
- PAYRUJLWNCNPSJ-UHFFFAOYSA-N Aniline Chemical compound NC1=CC=CC=C1 PAYRUJLWNCNPSJ-UHFFFAOYSA-N 0.000 description 2
- 230000006837 decompression Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 230000003247 decreasing effect Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 238000011144 upstream manufacturing Methods 0.000 description 2
- 238000005406 washing Methods 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 125000000217 alkyl group Chemical group 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- QGZKDVFQNNGYKY-UHFFFAOYSA-N ammonia Natural products N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 1
- -1 ammonia peroxide Chemical class 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- SWXQKHHHCFXQJF-UHFFFAOYSA-N azane;hydrogen peroxide Chemical compound [NH4+].[O-]O SWXQKHHHCFXQJF-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 210000000078 claw Anatomy 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009833 condensation Methods 0.000 description 1
- 230000005494 condensation Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 125000000524 functional group Chemical group 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012719 thermal polymerization Methods 0.000 description 1
- 239000002918 waste heat Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
- C23C16/463—Cooling of the substrate
- C23C16/466—Cooling of the substrate using thermal contact gas
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02312—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment treatment by exposure to a gas or vapour
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67303—Vertical boat type carrier whereby the substrates are horizontally supported, e.g. comprising rod-shaped elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber vertical transfer of a batch of workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/36—Successively applying liquids or other fluent materials, e.g. without intermediate treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D1/00—Processes for applying liquids or other fluent materials
- B05D1/60—Deposition of organic layers from vapour phase
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
- B05D3/10—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by other chemical means
- B05D3/104—Pretreatment of other substrates
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- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Metallurgy (AREA)
- Mechanical Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Chemical Vapour Deposition (AREA)
- Formation Of Insulating Films (AREA)
- Physical Vapour Deposition (AREA)
Description
(第1の実施の形態)
最初に、図1から図15を参照し、本発明の第1の実施の形態に係る成膜装置について説明する。本実施の形態に係る成膜装置は、例えばピロメリット酸二無水物(Pyromellitic Dianhydride、以下「PMDA」と略す。)を気化させた第1の原料ガスと、例えば4,4'−3オキシジアニリン(4,4'-Oxydianiline、以下「ODA」と略す。)を気化させた第2の原料ガスとを、成膜容器内に搬入されている基板に供給することによって、基板にポリイミド膜を成膜する成膜装置に適用することができる。
(第1の実施の形態の変形例)
次に、図16を参照し、本発明の第1の実施の形態の変形例に係る成膜装置について説明する。
(第2の実施の形態)
次に、図17を参照し、本発明の第2の実施の形態に係る成膜装置について説明する。
43 蓋体(基板保持部)
44、44a、44b ボート(基板保持部)
60 成膜容器
65 冷却機構
70 供給機構
71 原料ガス供給部
80 密着促進剤供給機構
90 パージガス供給機構
95 排気機構
100 制御部
W ウェハ
Claims (7)
- 酸二無水物よりなる第1の原料を気化させた第1の原料ガスと、ジアミンよりなる第2の原料を気化させた第2の原料ガスとを、成膜容器内に搬入されている基板に供給することによって、前記基板にポリイミド膜を成膜する成膜装置において、
前記成膜容器内に搬入されている基板を加熱する加熱機構と、
前記成膜容器内に密着促進剤を気化させた密着促進剤ガスを供給する密着促進剤供給機構と、
前記加熱機構と前記密着促進剤供給機構とを制御する制御部と
を有し、
前記制御部は、基板を前記成膜容器内に搬入した後、前記加熱機構により、前記基板の温度を、前記基板にポリイミド膜を成膜するときの所定温度まで上昇させている間に、前記密着促進剤供給機構により前記密着促進剤ガスを前記成膜容器内に供給し、前記基板の表面を前記密着促進剤ガスにより処理するように、制御するものである、成膜装置。 - 前記密着促進剤供給機構は、前記成膜容器内に設けられるとともに、前記密着促進剤ガスを供給するための供給孔が形成された、供給管を含み、前記供給孔を介して前記成膜容器内に前記密着促進剤ガスを供給するものである、請求項1に記載の成膜装置。
- 前記成膜容器内で基板を保持する基板保持部を有し、
前記供給孔は、前記基板保持部に保持されている基板の近傍に配置されている、請求項2に記載の成膜装置。 - 前記成膜容器内に前記第1の原料ガスを供給する第1の原料ガス供給部を有し、
前記制御部は、前記基板の表面を前記密着促進剤ガスにより処理した後、前記基板にポリイミド膜を成膜する前に、前記第1の原料ガス供給部により前記第1の原料ガスを供給し、前記基板の表面を前記第1の原料ガスにより処理するように、制御するものである、請求項1から請求項3のいずれかに記載の成膜装置。 - 前記成膜容器に空気を送風することによって前記成膜容器を冷却する冷却機構を有し、
前記制御部は、前記基板の温度を前記所定温度まで上昇させる際に、前記加熱機構の加熱量と前記冷却機構の冷却量とを制御するものである、請求項1から請求項4のいずれかに記載の成膜装置。 - 前記制御部は、前記基板にポリイミド膜を成膜した後、前記成膜容器内で、前記基板に成膜されたポリイミド膜を前記加熱機構により熱処理するように、制御するものである、請求項1から請求項5のいずれかに記載の成膜装置。
- 前記成膜容器内からガスを排気する排気機構と、
前記成膜容器内にパージガスを供給するパージガス供給機構と
を有し、
前記制御部は、前記基板にポリイミド膜を成膜した後、前記排気機構と前記パージガス供給機構とにより前記成膜容器内のガスをパージガスに置換する際に、前記基板に成膜されたポリイミド膜を前記加熱機構により熱処理するように、制御するものである、請求項6に記載の成膜装置。
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2011066461A JP5296132B2 (ja) | 2011-03-24 | 2011-03-24 | 成膜装置 |
TW101108336A TWI550128B (zh) | 2011-03-24 | 2012-03-12 | 膜沉積裝置 |
US13/425,483 US20130068163A1 (en) | 2011-03-24 | 2012-03-21 | Film deposition apparatus |
KR1020120029162A KR101571019B1 (ko) | 2011-03-24 | 2012-03-22 | 성막 장치 |
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JP2012080080A (ja) * | 2010-09-07 | 2012-04-19 | Tokyo Electron Ltd | 縦型熱処理装置及びその制御方法 |
JP5779957B2 (ja) * | 2011-04-20 | 2015-09-16 | 東京エレクトロン株式会社 | ローディングユニット及び処理システム |
JP6111171B2 (ja) * | 2013-09-02 | 2017-04-05 | 東京エレクトロン株式会社 | 成膜方法及び成膜装置 |
JP2015156460A (ja) | 2014-02-21 | 2015-08-27 | 東京エレクトロン株式会社 | 重合膜の成膜方法および成膜装置 |
FR3019159A1 (fr) * | 2014-04-01 | 2015-10-02 | Vincent Ind | Nacelle d'empaquetage de plaquette de silicium, ensemble comprenant une telle nacelle et methode d'empaquetage |
US10593572B2 (en) * | 2018-03-15 | 2020-03-17 | Kokusai Electric Corporation | Substrate processing apparatus and method of manufacturing semiconductor device |
CN112575312B (zh) * | 2019-09-30 | 2023-08-29 | 长鑫存储技术有限公司 | 薄膜制备设备以及薄膜制备方法 |
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JPS60197730A (ja) * | 1984-03-21 | 1985-10-07 | Ulvac Corp | ポリイミド膜の形成方法 |
JPS63289813A (ja) * | 1987-05-21 | 1988-11-28 | Yamaha Corp | 半導体ウエハ熱処理法 |
JP2821902B2 (ja) * | 1989-05-31 | 1998-11-05 | 日本真空技術株式会社 | 低比誘電性ポリイミド被膜の形成方法 |
JP2821907B2 (ja) * | 1989-06-09 | 1998-11-05 | 日本真空技術株式会社 | ポリイミド樹脂被膜の形成方法 |
JPH11172418A (ja) * | 1997-12-12 | 1999-06-29 | Ulvac Corp | 成膜装置 |
JP3897908B2 (ja) * | 1998-06-16 | 2007-03-28 | 株式会社アルバック | 低比誘電性絶縁膜の形成方法、層間絶縁膜及び半導体装置 |
JP4283910B2 (ja) * | 1998-07-07 | 2009-06-24 | 株式会社アルバック | 半導体製造装置およびポリイミド膜の形成方法 |
JP4493192B2 (ja) * | 2000-09-13 | 2010-06-30 | 東京エレクトロン株式会社 | バッチ式熱処理装置及びその制御方法 |
US6656313B2 (en) * | 2001-06-11 | 2003-12-02 | International Business Machines Corporation | Structure and method for improved adhesion between two polymer films |
DE10259728B4 (de) * | 2002-12-19 | 2008-01-17 | Advanced Micro Devices, Inc., Sunnyvale | Verfahren zur Herstellung einer Grabenisolationsstruktur und Verfahren zum Steuern eines Grades an Kantenrundung einer Grabenisolationsstruktur in einem Halbleiterbauelement |
JP4617174B2 (ja) * | 2005-02-22 | 2011-01-19 | 株式会社アルバック | 有機材料膜の形成方法 |
KR101003446B1 (ko) * | 2006-03-07 | 2010-12-28 | 가부시키가이샤 히다치 고쿠사이 덴키 | 기판 처리 장치 및 기판 처리 방법 |
US7727780B2 (en) * | 2007-01-26 | 2010-06-01 | Hitachi Kokusai Electric Inc. | Substrate processing method and semiconductor manufacturing apparatus |
JP2009119343A (ja) * | 2007-11-13 | 2009-06-04 | Seiko Epson Corp | タンク収納装置 |
TWI364126B (en) * | 2007-11-23 | 2012-05-11 | Ind Tech Res Inst | Plasma assisted apparatus for forming organic film |
US20110003078A1 (en) * | 2008-03-25 | 2011-01-06 | Tokyo Electron Limited | Apparatus for treating surface and method of treating surface |
JP5322468B2 (ja) * | 2008-03-25 | 2013-10-23 | 富士フイルム株式会社 | 放射線検出器の製造方法及び成膜装置 |
JP2010024484A (ja) | 2008-07-17 | 2010-02-04 | Seiko Epson Corp | 表面処理装置および表面処理方法 |
JP2010219147A (ja) | 2009-03-13 | 2010-09-30 | Tokyo Electron Ltd | 成膜装置、気化器、制御プログラム及びコンピュータ読取可能な記憶媒体 |
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US20130068163A1 (en) | 2013-03-21 |
KR101571019B1 (ko) | 2015-11-23 |
JP2012204518A (ja) | 2012-10-22 |
TW201305384A (zh) | 2013-02-01 |
TWI550128B (zh) | 2016-09-21 |
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