JP2014534640A - 一時的に接着された半導体ウエハの剥離 - Google Patents
一時的に接着された半導体ウエハの剥離 Download PDFInfo
- Publication number
- JP2014534640A JP2014534640A JP2014539126A JP2014539126A JP2014534640A JP 2014534640 A JP2014534640 A JP 2014534640A JP 2014539126 A JP2014539126 A JP 2014539126A JP 2014539126 A JP2014539126 A JP 2014539126A JP 2014534640 A JP2014534640 A JP 2014534640A
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- Prior art keywords
- wafer
- adhesive layer
- crack
- perturbation
- controlled
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Images
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1911—Heating or cooling delaminating means [e.g., melting means, freezing means, etc.]
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1978—Delaminating bending means
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Abstract
Description
本出願は、2011年10月27日に出願され、「Debonding Temporary Bonded Semiconductor Wafers」と題された米国仮特許出願第61/552,140号の利益を主張し、参照によってその全体を包含する。この出願は、2011年4月12日に出願され共に係属している、Gregory Georgeによる「Debonding equipment and methods for debonding temporary bonded wafers」と題された米国仮特許出願第13/085,159号の一部継続出願である。同号出願は、2009年4月16日に出願された米国仮特許出願第61/169,753号に基づく優先権を主張して2010年4月15日に出願された、Gregory Georgeらによる「Debonding equipment and methods for debonding temporary bonded wafers」と題された米国特許出願第12/761,014号の一部継続出願である。上記のすべては、参照によってその全体がここに包含される。
図1Aは、接着層108によって一時的にキャリアウエハ104に接着されたデバイスウエハ112の断面図である。本開示の実施形態は、接着層108に、好ましくはデバイスウエハ112またはキャリアウエハ104のいずれかと接着層108との界面で、亀裂を発生(initiate)させて広げ(propagate)、それによって両ウエハを剥離するために使用することができる。
図1Bは、制御された機械的、化学的、熱的、または放射的摂動を用いてウエハ/接着層界面に近接する接着層108の縁部に亀裂(またはひび割れ)を発生させることによって、デバイスウエハ112からキャリアウエハ104を剥離するために使用されるシステム100のハイレベルな実施形態を示している。図1Aに導入された要素に加えて、システム100は、ウエハ支持構造体116、背部保持装置120および亀裂イニシエータ124を含む。
上述したように、亀裂イニシエータ124は、接着層の縁から始まる亀裂を発生および/または拡大するために使用され、好ましくは、接着層108と、キャリアウエハ104またはデバイスウエハ112との間に配置される。亀裂は、ウエハ104および112の制御された剥離プロセスの一部として使用される。図1Dに示すように、制御された剥離工程プロセスでは、亀裂の先縁がほぼ直線形状で進んで行く。亀裂イニシエータ124からの制御された摂動は、例えば、機械的、熱的、化学的、および/または放射的な手段を用いて提供することができる。別の形態では、デバイスウエハ112から電荷を伝えるために亀裂イニシエータ124を使用することができ、それによればデバイスウエハ上の集積回路が静電放電(electro-static discharge)によって損傷するリスクが低減される。
図3A〜図3Eは、亀裂イニシエータ124の種々の断面の平面図(上面図)であり、各イニシエータは異なる先端部を有したものとして示されている。亀裂イニシエータ124およびその先端部は、ウエハ界面での接着層108の破壊特性、および/または、上述したように亀裂を発生および拡大させるために使用される他の1以上の亀裂発生技術に基づいて選択することができる。図示のように、亀裂イニシエータは、丸みを帯びた先端304、尖った先端308平坦な先端312、鋸歯状の先端316、または凹状弓形の先端320に接続することができるシャフト302を含む。シャフト302は、図3A〜図3Eのすべてにおいて同じ幅を持つものとして示されているが、幅を異ならせることもできる。例えば、目的が単に亀裂を発生させることである場合には、幅の狭い亀裂イニシエータを用いることができる。さらに発生後に亀裂を拡大するためにも用いられるのであれば、より幅広の亀裂イニシエータを用いることができる。
Claims (20)
- 一時的にキャリアウエハに接着されたウエハデバイスを前記キャリアウエハから剥離するためのシステムであって、
接着層によって前記デバイスウエハに一時的に接着されている前記キャリアウエハを含むウエハスタックを保持するように構成されたウエハ支持構造体と、
制御された摂動を前記接着層の縁部近傍に導入することにより、前記接着層に亀裂を発生させる亀裂イニシエータであって、制御された亀裂の拡大によって、前記デバイスウエハを損傷することなく前記キャリアウエハから前記デバイスウエハが剥離されるようにされ、前記デバイスウエハが100μm未満の厚さおよび少なくとも50mmの直径を有している、亀裂イニシエータと、
前記剥離の間、前記キャリアウエハの周辺部の少なくとも一部を拘束するように構成された背部保持装置と、
を具えたことを特徴とするシステム。 - 前記デバイスウエハが50μm未満の厚さを有することを特徴とする請求項1に記載のシステム。
- 前記デバイスウエハが10μm未満の厚さを有することを特徴とする請求項2に記載のシステム。
- 前記ウエハスタックが1μm未満の全厚変化を有していることを特徴とする請求項1に記載のシステム。
- 前記ウエハ支持構造体が、前記デバイスウエハの処理の間および前記キャリアウエハからの前記デバイスウエハの剥離の間の双方で、前記ウエハスタックを保持する真空チャックであることを特徴とする請求項1に記載のシステム。
- 前記真空チャックが、前記デバイスウエハの薄化の間に前記ウエハスタックを保持することを特徴とする請求項5に記載のシステム。
- 前記ウエハ支持構造体が可撓性を有することで、剥離の間に、前記デバイスウエハから離れるよう前記キャリアウエハが撓むことができるようにしたことを特徴とする請求項1に記載のシステム。
- 前記亀裂が実質的に直線状の先縁をもって広がることを特徴とする請求項1に記載のシステム。
- 前記亀裂イニシエータがさらに、前記亀裂を発生させた後に拡大させるように構成されていることを特徴とする請求項1に記載のシステム。
- 前記亀裂を、前記接着層と前記キャリアウエハとの界面で発生させることを特徴とする請求項1に記載のシステム。
- 前記亀裂を、前記接着層と前記デバイスウエハとの界面で発生させることを特徴とする請求項1に記載のシステム。
- 前記亀裂イニシエータが、前記亀裂を発生させるために、前記接着層に対し少なくとも制御された機械的摂動を与えることを特徴とする請求項1のシステム。
- 前記亀裂イニシエータが化学物質送達装置をさらに備え、該化学物質送達装置は、前記キャリアウエハからの前記デバイスウエハの剥離を開始させるために前記接着層に対し制御された化学的摂動を提供するのに使用されることを特徴とする請求項1に記載のシステム。
- 前記亀裂イニシエータが熱エネルギ送達装置をさらに備え、該熱エネルギ送達装置は、前記キャリアウエハからの前記デバイスウエハの剥離を開始させるために前記接着層に対し制御された熱的摂動を提供するのに使用されることを特徴とする請求項1のシステム。
- 前記亀裂イニシエータが放射送達装置をさらに備え、該放射送達装置は、前記キャリアウエハからの前記デバイスウエハの剥離を開始させるために前記接着層に対し制御された放射的摂動を提供するのに使用されることを特徴とする請求項1のシステム。
- 前記亀裂イニシエータがさらに、前記キャリアウエハからの前記デバイスウエハの剥離を開始させるために前記接着層に対し制御された摂動を提供する手段を備えることを特徴とする請求項1のシステム。
- ウエハデバイスをキャリアウエハに一時的に接着している接着層に亀裂を発生させる装置であって、
シャフトと、
前記シャフトに接続され、前記接着層に機械的摂動を与えて前記亀裂を発生させるように構成された先端部と、
前記シャフトに接続され、前記先端の近傍にあって、前記接着層に非機械的摂動を送達して前記剥離を開始させるように構成された第2摂動機構と、
を具えたことを特徴とする装置。 - 前記第2摂動機構は、前記接着層に光を伝送する光ファイバを含み、前記光が前記接着層への制御された放射摂動を与えることを特徴とする請求項17に記載の装置。
- 前記第2摂動機構は、前記接着層に寒剤を供給する毛細管を含み、前記寒剤が前記接着層に対し制御された熱的摂動を与えることを特徴とする請求項17に記載の装置。
- 前記第2摂動機構は、前記接着層に溶剤を供給する毛細管を含み、前記溶剤が前記接着層に対し制御された化学的摂動を与えることを特徴とする請求項17に記載の装置。
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WO2013063603A2 (en) | 2013-05-02 |
KR101519312B1 (ko) | 2015-05-15 |
WO2013063603A3 (en) | 2013-07-11 |
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EP2771904B1 (en) | 2020-10-14 |
JP5739588B2 (ja) | 2015-06-24 |
US20160300747A1 (en) | 2016-10-13 |
US8950459B2 (en) | 2015-02-10 |
TW201521100A (zh) | 2015-06-01 |
EP2771904A4 (en) | 2015-06-24 |
CN103988282B (zh) | 2016-08-17 |
US9472437B2 (en) | 2016-10-18 |
KR101605298B1 (ko) | 2016-03-21 |
JP6030700B2 (ja) | 2016-11-24 |
KR20140097194A (ko) | 2014-08-06 |
CN103988282A (zh) | 2014-08-13 |
KR20150046356A (ko) | 2015-04-29 |
TW201335981A (zh) | 2013-09-01 |
US20150101744A1 (en) | 2015-04-16 |
US9583374B2 (en) | 2017-02-28 |
TWI480943B (zh) | 2015-04-11 |
US20130048224A1 (en) | 2013-02-28 |
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