JP5068674B2 - 半導体加工のための一時的なウェハ結合法 - Google Patents
半導体加工のための一時的なウェハ結合法 Download PDFInfo
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- JP5068674B2 JP5068674B2 JP2007558025A JP2007558025A JP5068674B2 JP 5068674 B2 JP5068674 B2 JP 5068674B2 JP 2007558025 A JP2007558025 A JP 2007558025A JP 2007558025 A JP2007558025 A JP 2007558025A JP 5068674 B2 JP5068674 B2 JP 5068674B2
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- 125000000913 palmityl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- AXNJHBYHBDPTQF-UHFFFAOYSA-N trimethoxy(tetradecyl)silane Chemical compound CCCCCCCCCCCCCC[Si](OC)(OC)OC AXNJHBYHBDPTQF-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J183/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Adhesives based on derivatives of such polymers
- C09J183/04—Polysiloxanes
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J5/00—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers
- C09J5/06—Adhesive processes in general; Adhesive processes not provided for elsewhere, e.g. relating to primers involving heating of the applied adhesive
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/52—Mounting semiconductor bodies in containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
- C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2301/00—Additional features of adhesives in the form of films or foils
- C09J2301/50—Additional features of adhesives in the form of films or foils characterized by process specific features
- C09J2301/502—Additional features of adhesives in the form of films or foils characterized by process specific features process for debonding adherents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
- C09J2483/00—Presence of polysiloxane
-
- H—ELECTRICITY
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Description
(1)第1基板に付加反応硬化型接着性組成物を塗布することによってフィルムを形成する段階と、
任意に、(2)段階(1)の生成物を加熱する段階と、
(3)第2基板を前記フィルムに付着させるが、前記第1基板及び第2基板のうち少なくとも一つが半導体ウェハである段階と、
(4)前記フィルムを硬化して、硬化フィルムを形成する段階と、
(5)前記半導体ウェハを加工する段階と、
(6)エッチング液で前記硬化フィルムを除去する段階と、を含む。
本発明の方法において使用される接着性組成物は、その硬化反応で実質的な副生成物を生成しない、どのような接着剤であってもよい。接着性組成物は、付加反応硬化型接着性組成物であってよい。付加反応硬化型接着性組成物は、アクリレート硬化型、エポキシ硬化型、ヒドロシリル化硬化型、及びメタクリレート硬化型のものを含むが、これらに制限されるわけではない。本発明の方法において用いられるヒドロシリル化硬化型接着性組成物は、
(A)1分子あたり平均して少なくとも二つのケイ素結合不飽和有機基を含むポリオルガノシロキサンと、
(B)組成物を硬化するのに十分な量の、1分子あたり平均して少なくとも二つのケイ素結合水素原子を含むオルガノシリコン化合物と、
(C)触媒量のヒドロシリル化触媒と、を含む。
成分(A)は1分子あたり平均して少なくとも二つのケイ素結合不飽和有機基を含むポリオルガノシロキサンを少なくとも一つ含む。これらの不飽和有機基はヒドロシリル化反応を行なうことが可能であり、アルケニル基によって例示される。ポリオルガノシロキサンは直鎖、分岐、又は樹脂状構造であってよい。ポリオルガノシロキサンはホモポリマー又はコポリマーであってよい。不飽和有機基は2〜10個の炭素原子を有してよく、例えばビニル、アリル、ブテニル及びヘキセニル等のアルケニル基で例示されるが、これらに制限されるわけではない。ポリオルガノシロキサン中の不飽和有機基は末端に、ペンダント位置に、又は末端及びペンダント位置の両方に位置してよい。
成分(B)は1分子あたり少なくとも平均二つのケイ素原子結合水素原子を含む、少なくとも一つのオルガノシリコン化合物である。一般的には、成分(A)中の1分子あたりのアルケニル基の平均数と成分(B)中の1分子あたりのケイ素原子結合水素原子の平均数との合計が4以上のときに架橋が起こると理解される。成分(B)中のケイ素原子結合水素原子は末端に、ペンダント位置に、又は末端及びペンダント位置の両方に位置してよい。
適切なヒドロシリル化触媒は従来技術で知られており、商業的に入手可能である。成分(C)は、白金、ロジウム、ルテニウム、パラジウム、オスミウム、及びイリジウム金属から選択される白金族金属、又はそれらの有機金属化合物、又はそれらの組合せを含んでよい。成分(C)は、例えば塩化白金酸、塩化白金酸六水和物、二塩化白金、白金アセチルアセトナート等の化合物、及び前記化合物の低分子量オルガノポリシロキサンとの錯体、又はマトリックス内若しくはコアシェル型構造内にマイクロカプセル化された白金化合物等で例示される。低分子量オルガノポリシロキサンの白金錯体は、1,3−ジエテニル−1,1,3,3−テトラメチルジシロキサン白金錯体を含む。これらの錯体は樹脂マトリックス中にマイクロカプセル化されてよい。
接着性組成物は、本発明の方法における接着性組成物の硬化に悪影響を及ぼさないならば、一つ以上の任意の成分をさらに含んでよい。任意の成分の例としては、(D)溶媒、(E)抑制剤、(F)フィラー、(G)処理剤、(H)スペーサ、(I)接着促進剤、(J)界面活性剤、(K)顔料又は染料等の着色剤、及びそれらの組合せが挙げられるが、これらに制限されるわけではない。
接着性組成物は任意にさらに溶媒を含んでよい。適切な溶媒は従来技術で知られており、商業的に入手可能である。溶媒は3〜20個の炭素原子を有する有機溶媒であってよい。溶媒の例としては、例えばノナン、デカリン及びドデカン等の脂肪族炭化水素、例えばメシチレン、キシレン及びトルエン等の芳香族炭化水素;例えば酢酸エチル及びγ−ブチロラクトン等のエステル;例えばn−ブチルエーテル及びポリエチレングリコールモノメチルエーテル等のエーテル;例えばメチルイソブチルケトン及びメチルペンチルケトン等のケトン;例えば鎖状、分岐状、及び環状のポリジメチルシロキサン等のシリコーン流体、及びそのような溶媒の混合物が挙げられる。接着性組成物中の特定の溶媒の最適な濃度は、通常の実験によって容易に決定することができる。しかしながら、溶媒の量は組成物の重量に対して0〜95%、又は1〜95%であってよい。
前記成分(A)、(B)及び(C)を混合することによって、室温で硬化が開始してよい。作用時間または「ポットライフ」をより長くするため、接着性組成物に任意の成分(E)、抑制剤、を加えることによって室温条件下での触媒活性を遅延又は抑制してもよい。抑制剤は室温において本発明の接着性組成物の硬化を遅らせるが、高温における組成物の硬化は妨害しない。適切な抑制剤としては、例えば3−メチル−3−ペンテン−1−イン及び3,5−ジメチル−3−ヘキセン−1−イン等の様々な「エン−イン」系;例えば、3,5−ジメチル−1−ヘキシン−3−オール、1−エチニル−1−シクロヘキサノール、2−フェニル−3−ブチン−2−オール等のアセチレンアルコール;例えば周知のフマル酸及びマレイン酸ジアルキル、ジアルケニル及びジアルコキシアルキル等の、マレイン酸塩及びフマル酸塩;およびシクロビニルシロキサンが挙げられる。
任意の成分(F)はフィラーである。成分(F)は熱伝導性フィラー、補強フィラー、又はそれらの組合せを含んでよい。成分(F)に関して適切な熱伝導性フィラーとして、金属粒子、金属酸化物粒子、及びそれらの組合せが挙げられる。成分(F)に関して適切な熱伝導性フィラーとして、窒化アルミニウム;酸化アルミニウム;チタン酸バリウム;酸化ベリリウム;窒化ホウ素;ダイヤモンド;グラファイト;酸化マグネシウム;銅、金、ニッケル又は銀等の金属粒子;シリコンカーバイド;タングステンカーバイド;酸化亜鉛、及びそれらの組合せが挙げられる。
フィラーは任意に成分(G)、処理剤、で表面処理されてよい。処理剤及び処理方法は従来技術で知られている。例えば米国特許第6,169,142号明細書(第4カラム、第42行目から第5カラム第2行目)を参照されたい。
任意の成分(H)はスペーサである。スペーサは有機粒子、無機粒子又はそれらの組合せを含んでよい。スペーサは熱伝導性、電気伝導性又はそれら両方を有してよい。スペーサは少なくとも25マイクロメータから250マイクロメータまでの粒子サイズを有してよい。スペーサは単分散ビーズを含んでよい。スペーサは、ポリスチレン、ガラス、過フッ化炭化水素ポリマー、及びそれらの組合せによって例示されるが、これらに制限されるわけではない。スペーサは、フィラーに加えて、又はフィラーのかわりに、フィラーの全て又は一部として添加されてよい。スペーサは成分(G)で処理されてよい。
成分(I)は接着促進剤である。成分(I)は遷移金属キレート、アルコキシシラン、アルコキシシランとヒドロキシ官能化ポリオルガノシロキサンとの組み合わせ、又はそれらの組み合わせを含んでよい。
本発明はウェハ結合方法に関する。前記方法は、
(1)第1基板に付加反応硬化型接着性組成物を塗布する段階と、
任意に、(2)段階(1)の製造物を加熱;それによってフィルムを形成する段階と、
(3)第2基板を前記フィルムに付着させるが、前記第1基板及び第2基板のうち少なくとも一つが半導体ウェハである段階と、
(4)前記フィルムを硬化して、硬化フィルムを形成する段階と、
(5)前記半導体ウェハを加工する段階と、
(6)エッチング液で前記硬化フィルムを除去する段階と、を含む。
これらの例は本発明を当業者に説明することを意図しており、クレームで説明される本発明の範囲を制限するものとして解釈されるべきではない。
組成物は、(A1)ビニル官能化シリコーン樹脂71%及び(B1)Si−H官能化ポリジメチルシロキサン29%を(D1)メシチレンに溶解することによって調製される。これに(C1)白金アセチルアセトナート20ppmを加え、結果として得られる接着性組成物はウェハ上にスピンコートされる。ウェハは、その後穏やかな条件で焼成され残ったメシチレン溶媒が除去される。その後第2のウェハが結果として得られたフィルム上に配置され、250℃で2分間硬化される。ウェハは互いに接着する。
ヒドロシリル化硬化型接着性組成物は半導体ウェハの表面に塗布される。この例において、一つのヒドロシリル化硬化型接着性組成物はダウコーニング(登録商標)WL−5150であり、米国ミシガン州ミッドランドのダウコーニング社から商業的に入手可能である。この例における第2のヒドロシリル化硬化型接着性組成物は、Me3SiO1/2及びMe2ViSiO1/2単位を含むMQ樹脂58部、トリメチルシロキシ末端ジメチル、メチルハイドロジェンシロキサン21部、1,3,5−トリメチルベンゼン16部、及び白金アセチルアセトナート0.1%未満を含む。各ウェハは溶媒を除去してフィルムを形成する温度で加熱される。温度及び接着性組成物は表1に示される。
Claims (11)
- (1)第1基板に付加反応硬化型接着性組成物を塗布することによってフィルムを形成する段階と、
任意に、(2)段階(1)の生成物を加熱する段階と、
(3)第2基板を前記フィルムに付着させるが、前記第1基板及び第2基板のうち少なくとも一つが半導体ウェハである段階と、
(4)前記フィルムを硬化して、硬化フィルムを形成する段階と、
(5)前記半導体ウェハを加工する段階と、
(6)エッチング液で前記硬化フィルムを除去する段階と、を含み、
前記付加反応硬化型接着性組成物がヒドロシリル化反応硬化型組成物であって、
(A)1分子あたり平均して少なくとも二つのケイ素結合不飽和有機基を含むポリオルガノシロキサンと、
(B)組成物を硬化するのに十分な量の、1分子あたり平均して少なくとも二つのケイ素結合水素原子を含むオルガノシリコン化合物と、
(C)触媒量のヒドロシリル化触媒と、
任意に、(D)溶媒と、
任意に、(E)抑制剤と、
任意に、(F)フィラーと、
任意に、(G)処理剤と、
任意に、(H)スペーサと、
任意に、(I)接着促進剤と、
任意に、(J)界面活性剤と、
任意に、(K)着色剤と、を含む方法。 - 前記段階(1)が、スピンコーティング、噴霧コーティング、ディッピング、又は印刷から選択される方法によって実施される、請求項1に記載の方法。
- 前記成分(A)がアルケニル官能化ポリオルガノシロキサン樹脂である、請求項1に記載の方法。
- 前記成分(B)が1分子あたり平均少なくとも二つのケイ素結合水素原子を含むオルガノハイドロジェンポリシロキサンである、請求項1に記載の方法。
- 前記成分(C)が白金アセチルアセトナートである、請求項1に記載の方法。
- 前記成分(D)がメシチレンである、請求項1に記載の方法。
- 前記第1基板が第1半導体ウェハであり、前記第2基板が第2半導体ウェハである、請求項1に記載の方法。
- 前記成分(D)が存在し、前記成分(D)を除去するために、前記段階(2)が温度50〜120℃で最大5分間加熱することによって実施される、請求項1に記載の方法。
- 前記段階(2)が最大温度200℃で1〜30分間加熱することにより前記フィルムを部分的に硬化する工程をさらに含む、請求項8に記載の方法。
- 前記段階(4)が温度150〜250℃で30〜120分間加熱することによって実施される、請求項1に記載の方法。
- 前記エッチング液が前記フィルムを溶解可能な酸又は塩基を含有する有機溶媒を含む、請求項1に記載の方法。
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- 2006-02-07 JP JP2007558025A patent/JP5068674B2/ja not_active Expired - Fee Related
- 2006-02-07 WO PCT/US2006/004449 patent/WO2006093639A1/en active Application Filing
- 2006-02-07 KR KR1020077019806A patent/KR101278460B1/ko not_active IP Right Cessation
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US7541264B2 (en) | 2009-06-02 |
JP2008532313A (ja) | 2008-08-14 |
KR101278460B1 (ko) | 2013-07-02 |
US20080090380A1 (en) | 2008-04-17 |
EP1854136A1 (en) | 2007-11-14 |
WO2006093639A1 (en) | 2006-09-08 |
KR20070110310A (ko) | 2007-11-16 |
TWI397131B (zh) | 2013-05-21 |
TW200636877A (en) | 2006-10-16 |
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