JP2008517780A - エッチングのための犠牲基板 - Google Patents
エッチングのための犠牲基板 Download PDFInfo
- Publication number
- JP2008517780A JP2008517780A JP2007538091A JP2007538091A JP2008517780A JP 2008517780 A JP2008517780 A JP 2008517780A JP 2007538091 A JP2007538091 A JP 2007538091A JP 2007538091 A JP2007538091 A JP 2007538091A JP 2008517780 A JP2008517780 A JP 2008517780A
- Authority
- JP
- Japan
- Prior art keywords
- silicon substrate
- substrate
- layer
- piezoelectric
- sacrificial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 252
- 238000005530 etching Methods 0.000 title claims abstract description 40
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 142
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 142
- 239000010703 silicon Substances 0.000 claims abstract description 142
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- 239000002184 metal Substances 0.000 claims abstract description 6
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- 238000010586 diagram Methods 0.000 description 7
- 238000002955 isolation Methods 0.000 description 7
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- UMIVXZPTRXBADB-UHFFFAOYSA-N benzocyclobutene Chemical compound C1=CC=C2CCC2=C1 UMIVXZPTRXBADB-UHFFFAOYSA-N 0.000 description 6
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- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical group [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 2
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- 240000005020 Acaciella glauca Species 0.000 description 1
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
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- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
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- JVPLOXQKFGYFMN-UHFFFAOYSA-N gold tin Chemical compound [Sn].[Au] JVPLOXQKFGYFMN-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 1
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
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- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
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- 238000007645 offset printing Methods 0.000 description 1
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- ZBSCCQXBYNSKPV-UHFFFAOYSA-N oxolead;oxomagnesium;2,4,5-trioxa-1$l^{5},3$l^{5}-diniobabicyclo[1.1.1]pentane 1,3-dioxide Chemical compound [Mg]=O.[Pb]=O.[Pb]=O.[Pb]=O.O1[Nb]2(=O)O[Nb]1(=O)O2 ZBSCCQXBYNSKPV-UHFFFAOYSA-N 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
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- 229910052814 silicon oxide Inorganic materials 0.000 description 1
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- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- MAKDTFFYCIMFQP-UHFFFAOYSA-N titanium tungsten Chemical compound [Ti].[W] MAKDTFFYCIMFQP-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
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Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/135—Nozzles
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- B41J2/161—Production of print heads with piezoelectric elements of film type, deformed by bending and disposed on a diaphragm
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- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
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- B81C99/0005—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same
- B81C99/001—Apparatus specially adapted for the manufacture or treatment of microstructural devices or systems, or methods for manufacturing the same for cutting, cleaving or grinding
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B41—PRINTING; LINING MACHINES; TYPEWRITERS; STAMPS
- B41J—TYPEWRITERS; SELECTIVE PRINTING MECHANISMS, i.e. MECHANISMS PRINTING OTHERWISE THAN FROM A FORME; CORRECTION OF TYPOGRAPHICAL ERRORS
- B41J2/00—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed
- B41J2/005—Typewriters or selective printing mechanisms characterised by the printing or marking process for which they are designed characterised by bringing liquid or particles selectively into contact with a printing material
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- B41J2/14—Structure thereof only for on-demand ink jet heads
- B41J2002/14403—Structure thereof only for on-demand ink jet heads including a filter
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
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- Y10T29/53—Means to assemble or disassemble
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Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Mechanical Engineering (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Micromachines (AREA)
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
- Weting (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
本出願は、2004年10月21日に提出された米国仮特許出願第60/621,507号に対する優先権を主張する。先行出願の開示は本出願の一部と見なされ、本出願の開示に参照して組み込まれる。
本発明は、シリコン基板加工方法に関する。
一般に、1つの態様では、本発明はシリコン基板をエッチングする方法について記載する。本方法は、第1シリコン基板を犠牲シリコン基板へ接合するステップを含む。第1シリコン基板がエッチングされる。第1シリコン基板が犠牲シリコン基板から分離することを引き起こすために、第1シリコン基板と犠牲シリコン基板との界面に圧力が加えられる。
モノリシック構造および精密に形成された機能を備えるMEMSは、様々な技術を用いて形成できる。機能の精密さは、MEMSに含まれる各構造の一様な挙動をもたらすことができる。様々なMEMSが、同一もしくは類似の技術を用いて形成できる。以下では、印刷装置である1つのタイプのMEMSについて記載する。しかし、印刷装置を形成するために使用される技術は、流体射出装置、センサ、マイクロホン、光変調器およびその他の装置などの多数の他のMEMS構造を形成するために適用できる。
モジュール本体124は、ベース部分およびノズル部分内に流路機能をエッチングするステップによって製造される。膜層、ベース部分およびノズル部分は、モジュール本体を形成するために接合される。次にアクチュエータがモジュール本体へ取り付けられる。
アクチュエータの製造
図21および35を参照すると、予備焼成された圧電材料のブロックである圧電層500が用意される(ステップ905)。圧電材料はジルコン酸チタン酸鉛(PZT)であってよいが、他の圧電材料を使用することもできる。1つの実行では、PZTは、約7.5g/cm3以上、例えば約8g/cm3の密度を有する。d31係数は、約200以上であってよい。HIPS処理圧電材料は、Sumitomo Piezoelectric Materials(日本国)からH5CおよびH5Dとして入手できる。H5C材料は、約8.05g/cm3の見かけの密度および約210のd31を示す。H5D材料は、約8.15g/cm3の見かけの密度および約300のd31を示す。基板は、典型的には厚さ約1cmであり、所望の作業厚さへソーで切ることができる。圧電材料は、プレス加工、ドクター・ブレーディング、グリーン・シート、ソル・ゲルまたは蒸着を含む技術によって形成できる。圧電材料の製造については、全内容が参照して本明細書に組み込まれるPiezoelectric Ceramics, B. Jaffe, Academic Press Limited, 1971の中で考察されている。ホットプレス法を含む形成方法は、第258〜9頁に記載されている。TRS Ceramics社(ペンシルベニア州フィラデルフィア)から入手できるニオブ酸鉛マグネシウムなどの単結晶圧電材料もまた使用できる。バルクPZT材料は、スパッタリングされた、スクリーン印刷された、またはソル・ゲル形成されたPZT材料より高いd係数、誘電定数、結合係数、剛性および密度を有していてよい。
Claims (18)
- シリコン基板をエッチングする方法であって、
第1シリコン基板(200)を犠牲シリコン基板(240、241)へ接合するステップと、
第1シリコン基板(200)を犠牲シリコン基板(240、241)内へエッチングするステップと、および
第1シリコン基板(200)が犠牲シリコン基板(240、241)から分離することを引き起こすために第1シリコン基板(200)と犠牲シリコン基板(240、241)との界面に圧力を加えるステップと、を含む方法。 - 前記第1シリコン基板(200)を前記犠牲シリコン基板(240、241)へ接合するステップが、前記第1シリコン基板(200)と前記犠牲シリコン基板(240、241)との間のファンデルワールス結合を作り出す、請求項1に記載の方法。
- 前記第1シリコン基板(200)をエッチングするステップが、深反応性イオンエッチングを含む、請求項1に記載の方法。
- 前記第1シリコン基板と前記犠牲シリコン基板の界面に圧力を加えるステップが、前記界面に鋭利な縁を有する部材(620)を押すステップを含む、請求項1に記載の方法。
- 前記界面に圧力を加えるステップが、前記第1シリコン基板(200)が前記犠牲基板(240、241)から完全に分離されるまで継続される、請求項1に記載の方法。
- 第1シリコン基板(200)を犠牲シリコン基板(240、241)へ接合するステップが、室温で行なわれる、請求項1に記載の方法。
- 前記第1シリコン基板(200)および前記犠牲シリコン基板(240、241)が、各々対向する平面および薄い縁を含み、界面に圧力を加えるステップが前記平面に平行な圧力を加えるステップを含む、請求項1に記載の方法。
- 接合された基板を分離するための装置であって、
基板保持部材(610)であって、上向きおよび下向き方向に作動可能である基盤保持部材と、
1つまたは複数の分離部材(620)と、および
少なくとも1つの分離部材に接続された機構であって、該少なくとも1つの分離部材(620)を該基板保持部材(610)によって保持された基板の中心に向かう方向に移動させる機構と、を含む装置。 - 前記分離部材(620)が、薄い縁部分を含む、請求項8に記載の装置。
- 前記分離部材(620)が、金属刃を含む、請求項8に記載の装置。
- 前記機構が、モータ(650)を含む、請求項8に記載の装置。
- 前記1つまたは複数の分離部材によって加えられた圧力を感知するためのセンサを含むさらに含む、請求項8に記載の装置。
- 前記センサから受信した信号によって少なくとも1つの分離部材(620)を移動させるように構成された制御装置(660)をさらに含む、請求項12に記載の装置。
- 圧力が閾値を超えると前記少なくとも1つの分離部材(620)に内向き移動を停止させるように構成された制御装置(660)をさらに含む、請求項8に記載の装置。
- 6つの分離部材(620)を含む、請求項8に記載の装置。
- 8つの分離部材(620)を含む、請求項8に記載の装置。
- 2つ以上の分離部材を含む請求項8に記載の装置であって、前記分離部材が支持部材610の周囲で等角間隔で配置されている、装置。
- 前記機構が、前記1つまたは複数の分離部材が規定場所を越えて移動するのを防止する、請求項8に記載の装置。
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2008
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Cited By (12)
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JP2009083140A (ja) * | 2007-09-27 | 2009-04-23 | Fujifilm Corp | 液体吐出ヘッド及びその製造方法 |
JP2012502824A (ja) * | 2008-09-18 | 2012-02-02 | フジフィルム ディマティックス, インコーポレイテッド | 溝を設けたシリコン基板との接着 |
US8853915B2 (en) | 2008-09-18 | 2014-10-07 | Fujifilm Dimatix, Inc. | Bonding on silicon substrate having a groove |
KR20110089334A (ko) * | 2008-11-16 | 2011-08-05 | 수스 마이크로텍 리소그라피 게엠바하 | 웨이퍼 메이팅이 개선된 웨이퍼 본딩 방법 및 그 장치 |
KR101650971B1 (ko) | 2008-11-16 | 2016-08-24 | 수스 마이크로텍 리소그라피 게엠바하 | 웨이퍼 메이팅이 개선된 웨이퍼 본딩 방법 및 그 장치 |
JP2012522132A (ja) * | 2009-03-25 | 2012-09-20 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン | 有機蒸気ジェット印刷用のノズルの幾何学的形状 |
JP2012522131A (ja) * | 2009-03-25 | 2012-09-20 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガン | 小型有機蒸気ジェット印刷プリントヘッド |
US9472437B2 (en) | 2009-04-16 | 2016-10-18 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
US9583374B2 (en) | 2009-04-16 | 2017-02-28 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
JP2013527062A (ja) * | 2010-05-27 | 2013-06-27 | ヒューレット−パッカード デベロップメント カンパニー エル.ピー. | プリントヘッド及び関連する方法及びシステム |
US8789932B2 (en) | 2010-05-27 | 2014-07-29 | Hewlett-Packard Development Company, L.P. | Printhead and related methods and systems |
JP2014534640A (ja) * | 2011-10-27 | 2014-12-18 | ズース マイクロテック リトグラフ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 一時的に接着された半導体ウエハの剥離 |
Also Published As
Publication number | Publication date |
---|---|
US20080020573A1 (en) | 2008-01-24 |
KR101263276B1 (ko) | 2013-05-10 |
TWI401739B (zh) | 2013-07-11 |
KR20070073919A (ko) | 2007-07-10 |
JP5313501B2 (ja) | 2013-10-09 |
EP1814817A1 (en) | 2007-08-08 |
ATE502893T1 (de) | 2011-04-15 |
CN101080360A (zh) | 2007-11-28 |
EP1814817B1 (en) | 2011-03-23 |
HK1105943A1 (en) | 2008-02-29 |
US7622048B2 (en) | 2009-11-24 |
TW200618100A (en) | 2006-06-01 |
WO2006047326B1 (en) | 2006-06-15 |
DE602005027102D1 (de) | 2011-05-05 |
CN101080360B (zh) | 2012-10-31 |
WO2006047326A1 (en) | 2006-05-04 |
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