JP2005514241A - 基板層切断装置及び方法 - Google Patents
基板層切断装置及び方法 Download PDFInfo
- Publication number
- JP2005514241A JP2005514241A JP2003559738A JP2003559738A JP2005514241A JP 2005514241 A JP2005514241 A JP 2005514241A JP 2003559738 A JP2003559738 A JP 2003559738A JP 2003559738 A JP2003559738 A JP 2003559738A JP 2005514241 A JP2005514241 A JP 2005514241A
- Authority
- JP
- Japan
- Prior art keywords
- cutting
- cut
- assembly
- holding means
- wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005520 cutting process Methods 0.000 title claims abstract description 87
- 239000000758 substrate Substances 0.000 title claims abstract description 28
- 238000000034 method Methods 0.000 title claims description 18
- 239000000463 material Substances 0.000 claims abstract description 23
- 239000012530 fluid Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 87
- 230000032798 delamination Effects 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 238000005352 clarification Methods 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000010008 shearing Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0011—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing with preliminary treatment, e.g. weakening by scoring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0017—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools
- B28D5/0023—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing using moving tools rectilinearly
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0005—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by breaking, e.g. dicing
- B28D5/0052—Means for supporting or holding work during breaking
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0064—Devices for the automatic drive or the program control of the machines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
- H01L21/2003—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy characterised by the substrate
- H01L21/2007—Bonding of semiconductor wafers to insulating substrates or to semiconducting substrates using an intermediate insulating layer
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/10—Methods of surface bonding and/or assembly therefor
- Y10T156/1052—Methods of surface bonding and/or assembly therefor with cutting, punching, tearing or severing
- Y10T156/1059—Splitting sheet lamina in plane intermediate of faces
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1179—Gripping and pulling work apart during delaminating with poking during delaminating [e.g., jabbing, etc.]
- Y10T156/1184—Piercing layer during delaminating [e.g., cutting, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/11—Methods of delaminating, per se; i.e., separating at bonding face
- Y10T156/1168—Gripping and pulling work apart during delaminating
- Y10T156/1189—Gripping and pulling work apart during delaminating with shearing during delaminating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10T156/19—Delaminating means
- Y10T156/1961—Severing delaminating means [e.g., chisel, etc.]
- Y10T156/1967—Cutting delaminating means
- Y10T156/1972—Shearing delaminating means
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/10—Methods
- Y10T225/12—With preliminary weakening
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/307—Combined with preliminary weakener or with nonbreaking cutter
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/35—Work-parting pullers [bursters]
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T225/00—Severing by tearing or breaking
- Y10T225/30—Breaking or tearing apparatus
- Y10T225/371—Movable breaking tool
- Y10T225/379—Breaking tool intermediate spaced work supports
- Y10T225/386—Clamping supports
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T29/00—Metal working
- Y10T29/53—Means to assemble or disassemble
- Y10T29/53274—Means to disassemble electrical device
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/02—Other than completely through work thickness
- Y10T83/0267—Splitting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/04—Processes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T83/00—Cutting
- Y10T83/364—By fluid blast and/or suction
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Manufacturing Of Printed Wiring (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Electronic Switches (AREA)
- Nonmetal Cutting Devices (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Description
− 保持手段によって切断対象の組立体を保持し、
− 切断手段によって層を切断する、
材料の層の高精度自動切断方法に関する。
さらに、この例では、作業工程の再現性は保証されない。
上記の欠点を除去することを目的とする自動切断装置及び方法も既知である。
このような装置及び方法の一例は文献:欧州特許第925888号に開示されている。
−切断手段は切断対象の組立体に係合するブレードを含み、
−切断手段は加圧流体ジェットを発生させる手段を含み、
−保持手段は、切断を容易にするために、切断対象の組立体に歪みを生じさせるために制御された仕方で移動させることが可能であり、
−保持手段は、切断対象の組立体の各部分ごとに関連付けられたグリッパを含み、
−保持手段の制御された移動は切断平面に対して垂直に実行されるかも知れず、
−保持手段の制御された移動は切断平面と平行に実行されるかも知れず、
−装置は、切断作業の進行を表すデータ項目を獲得することが可能であるセンサ手段を含み、
−装置は、前記センサ手段の観測情報を用いて保持手段の制御された移動を制御するために使用される制御ループを含み、
−前記センサ手段は、切断対象の組立体の部分の間隔の経過の特徴を示すために使用された、切断対象の組立体の両側に配置された発光ダイオードを含み、
−装置は二つのブレードを含み、
−装置の各ブレードは、本質的に組立体の外周を係合するように、三日月形の輪郭をもつ前縁を有する。
−保持手段を基準にして切断対象の組立体を位置決めし、
−切断手段によって層を切断する、
材料の層の高精度自動切断方法であって、
切断対象の組立体の各部分の間隔及び/又は変形に能動的に追従するように保持手段の移動の制御を含むことを特徴とする方法を提案する。
−保持手段の制御された移動は、切断手段による切断対象の組立体の係合と連動して実行され、
−切断の進行を表す少なくとも一つのデータ項目が獲得され、保持手段の制御された移動はこの観測によって制御され、
−保持手段の移動の制御が、切断対象の組立体の切断平面内での前記手段の移動の制御を可能にさせ、
−保持手段の移動の制御が、切断対象の組立体の切断平面に対して垂直な方向での前記手段の移動の制御を可能にさせる。
−ウェハ30をその脆弱なゾーン200cに係合するために、少なくとも一つのブレードを含む。
−及び、切断作業中のウェハの保持手段を含む。本発明の範囲内で、前記保持手段は、ウェハの二つの外面を形成する部分20a及び20bのそれぞれの外面に連結された、二つのグリッパ100a及び100bの形で生産される。
各グリッパ100a及び100bは、関連付けられたウェハの外面のグリッピング手段を含む。
前記移動手段は、このように、各グリッパの制御された移動をそれぞれ他方とは独立して制御する能力を備えていることに注意すべきである。
−第一に、グリッパは、関連付けられたウェハ部分を切断平面に保持し、その結果として、ウェハの位置が、装置のブレードの係合中に前記切断平面内で制御される。
−第二に、グリッパは、切断平面内、及び/又は、垂直方向に制御された仕方で移動させられる。
−ウェハの部分が垂直方向に制御された移動を行う主要な効果は、制御された能動的な方法で、ブレードの係合と、前記部分間での剥離の最前線の伝搬とによって生じるウェハの部分の変形に追従することである。
−ウェハの部分の変形及び/又は間隔の制御に加えて、グリッパの垂直方向の移動は、また、このような間隔及び/又は変形に制御された仕方で追従するためだけではなく、切断にさらに有利に働くように、(矢印Ta及びTbに沿った)引っ張り歪みをウェハに生じさせるために制御される。
−また、この点に関して、各グリッパに関連付けられたグリッピング手段は、各グリッパとその関連付けられたウェハ部分との間に固定的な連結を保証し、その結果として、各グリッパが前記ウェハ部分に引っ張り歪みを加えることに注意すべきである。
−最後に、上記の構成と組み合わせて、ウェハの2部分の間に剪断応力を生じさせるため、例えば、グリッパを逆向きの、可能であれば、代わりの軌道に沿って移動させることにより、切断平面内のグリッパの制御された移動を制御することも可能である。これは切断にさらに有利に働く。この剪断の効果は図1に表され、図1には、ウェハのそれぞれの部分に、切断平面と平行で、しかし逆向きに加えられた逆向きの歪みCa及びCbが示されている。
−切断手段と、
−制御された仕方で移動させることができる保持手段と、
の全く独創的な組み合わせを提供する。
−第一に切断手段、
−第二にグリッパ、
の運動学を適応させることが可能であることに注意すべきである。
Claims (17)
- 材料の層が脆弱なゾーンを介してソース基板に連結され、前記ソース基板及び切断対象の層が切断対象の組立体を形成し、切断手段及び前記切断対象の組立体の保持手段を含む、材料の層の高精度自動切断装置であって、前記保持手段は、前記切断対象の各部分の間隔及び/又は変形に能動的に追従し、前記間隔及び/又は変形を補正するために、制御された仕方で移動させることができることを特徴とする高精度自動切断装置。
- 前記切断手段が、前記切断対象の組立体に係合するブレードを含むことを特徴とする、請求項1に記載の装置。
- 前記切断手段が、加圧流体ジェットを発生させる手段を含むことを特徴とする、請求項1又は2に記載の装置。
- 前記保持手段が、また、切断を促進するために、前記切断対象の組立体に歪みを生じさせるために制御された仕方で移動させることができることを特徴とする、請求項1から3のいずれか一項に記載の装置。
- 前記保持手段が、前記切断対象の組立体の各部分のそれぞれに関連付けられたグリッパを含むことを特徴とする、請求項1から4のいずれか一項に記載の装置。
- 前記保持手段の制御された移動が、切断平面に対して垂直に実行されることを特徴とする、請求項1から5のいずれか一項に記載の装置。
- 前記保持手段の制御された移動が、切断平面と平行に実行されることを特徴とする、請求項1から6のいずれか一項に記載の装置。
- 当該装置が、切断作業の進行を表すデータ項目を獲得することが可能であるセンサ手段を含むことを特徴とする、請求項1から7のうちいずれか一項に記載の装置。
- 当該装置が、前記センサ手段の観測情報を用いて前記保持手段の制御された移動を制御するために使用される制御ループを含むことを特徴とする、請求項1から8のうちいずれか一項に記載の装置。
- 前記センサ手段が、前記切断対象の組立体の各部分の間隔の経過の特徴を示すために使用される、前記切断対象の組立体の両側に配置された発光ダイオードを含むことを特徴とする、請求項1から9のうちいずれか一項に記載の装置。
- 当該装置が、二つのブレードを含むことを特徴とする、請求項1から10のうちいずれか一項に記載の装置。
- 当該装置の各ブレードが、本質的に前記組立体の外周を係合するように、三日月形の輪郭をもつ前縁を有することを特徴とする、請求項1から11のうちいずれか一項に記載の装置。
- 材料の層が、脆弱なゾーンを介してソース基板に取り付けられ、前記ソース基板及び切断対象の層が切断対象の組立体を形成し、
− 保持手段を基準にして切断対象の組立体を位置決めし、
− 切断手段によって層を切断する、
材料の層の高精度自動切断方法であって、
前記切断対象の組立体の各部分の間隔及び/又は変形に能動的に追従するように前記保持手段の移動を制御することを含むことを特徴とする高精度自動切断方法。 - 前記保持手段の制御された移動が、前記切断手段による前記切断対象の組立体の係合と連動して実行されることを特徴とする、請求項13に記載の方法。
- 切断の進行を表す少なくとも一つのデータ項目の獲得が実行され、前記保持手段の制御された移動が、この観測によって制御されることを特徴とする、請求項13又は14に記載の方法。
- 前記保持手段の移動の制御が、前記切断対象の組立体の切断平面内での前記手段の移動の制御を可能にすることを特徴とする、請求項13から15のうちいずれか一項に記載の方法。
- 前記保持手段の移動の制御が、前記切断対象の組立体の切断平面に対して垂直な方向での前記手段の移動の制御を可能にすることを特徴とする、請求項13から16のうちいずれか一項に記載の方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0200028A FR2834381B1 (fr) | 2002-01-03 | 2002-01-03 | Dispositif de coupe de couche d'un substrat, et procede associe |
FR02/00028 | 2002-01-03 | ||
PCT/FR2003/000002 WO2003059591A1 (fr) | 2002-01-03 | 2003-01-02 | Dispositif de coupe de couche d'un substrat, et procede associe |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010276059A Division JP2011103471A (ja) | 2002-01-03 | 2010-12-10 | 基板層切断装置及び方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2005514241A true JP2005514241A (ja) | 2005-05-19 |
JP4757444B2 JP4757444B2 (ja) | 2011-08-24 |
Family
ID=8871143
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2003559738A Expired - Lifetime JP4757444B2 (ja) | 2002-01-03 | 2003-01-02 | 基板層切断装置及び方法 |
JP2010276059A Pending JP2011103471A (ja) | 2002-01-03 | 2010-12-10 | 基板層切断装置及び方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2010276059A Pending JP2011103471A (ja) | 2002-01-03 | 2010-12-10 | 基板層切断装置及び方法 |
Country Status (9)
Country | Link |
---|---|
US (3) | US7182234B2 (ja) |
EP (1) | EP1469981B1 (ja) |
JP (2) | JP4757444B2 (ja) |
AT (1) | ATE425853T1 (ja) |
AU (1) | AU2003216776A1 (ja) |
DE (1) | DE60326700D1 (ja) |
FR (1) | FR2834381B1 (ja) |
TW (1) | TWI270133B (ja) |
WO (1) | WO2003059591A1 (ja) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013219328A (ja) * | 2012-03-13 | 2013-10-24 | Tokyo Electron Ltd | 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 |
JP2014110387A (ja) * | 2012-12-04 | 2014-06-12 | Tokyo Electron Ltd | 剥離装置、剥離システムおよび剥離方法 |
JP2014534640A (ja) * | 2011-10-27 | 2014-12-18 | ズース マイクロテック リトグラフ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 一時的に接着された半導体ウエハの剥離 |
WO2017026279A1 (ja) * | 2015-08-11 | 2017-02-16 | 東京応化工業株式会社 | 支持体分離装置及び支持体分離方法 |
JP2018505543A (ja) * | 2014-12-05 | 2018-02-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板スタック保持具、容器、および、基板スタックを分割するための方法 |
Families Citing this family (32)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
US7736361B2 (en) * | 2003-02-14 | 2010-06-15 | The Board Of Trustees Of The Leland Stamford Junior University | Electrosurgical system with uniformly enhanced electric field and minimal collateral damage |
US20050150597A1 (en) * | 2004-01-09 | 2005-07-14 | Silicon Genesis Corporation | Apparatus and method for controlled cleaving |
CN101080360B (zh) * | 2004-10-21 | 2012-10-31 | 富士胶卷迪马蒂克斯股份有限公司 | 用于蚀刻的牺牲基底 |
TW200832505A (en) * | 2007-01-18 | 2008-08-01 | Silicon Genesis Corp | Controlled substrate cleave process and apparatus |
KR100891384B1 (ko) * | 2007-06-14 | 2009-04-02 | 삼성모바일디스플레이주식회사 | 플렉서블 기판 접합 및 탈착장치 |
JP2009154407A (ja) * | 2007-12-27 | 2009-07-16 | Tdk Corp | 剥離装置、剥離方法および情報記録媒体製造方法 |
FR2925978B1 (fr) * | 2007-12-28 | 2010-01-29 | Commissariat Energie Atomique | Procede et dispositif de separation d'une structure. |
JP2010010207A (ja) * | 2008-06-24 | 2010-01-14 | Tokyo Ohka Kogyo Co Ltd | 剥離装置および剥離方法 |
US7927975B2 (en) | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
KR101580924B1 (ko) * | 2009-08-25 | 2015-12-30 | 삼성전자주식회사 | 웨이퍼 분할 장치 및 웨이퍼 분할 방법 |
US8479035B1 (en) | 2010-09-02 | 2013-07-02 | Google Inc. | Smart limited functionality mode manager |
FR2977069B1 (fr) | 2011-06-23 | 2014-02-07 | Soitec Silicon On Insulator | Procede de fabrication d'une structure semi-conductrice mettant en oeuvre un collage temporaire |
WO2013066758A1 (en) | 2011-10-31 | 2013-05-10 | Memc Electronic Materials, Inc. | Clamping apparatus for cleaving a bonded wafer structure and methods for cleaving |
JP2013173913A (ja) * | 2011-11-10 | 2013-09-05 | Nitto Denko Corp | 板の剥離方法 |
JP5165806B1 (ja) * | 2012-06-29 | 2013-03-21 | 株式会社関プレス | 金属部品の製造方法及び該製造法によって得られる金属部品 |
JP5875962B2 (ja) * | 2012-09-19 | 2016-03-02 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
KR102007042B1 (ko) | 2012-09-19 | 2019-08-02 | 도쿄엘렉트론가부시키가이샤 | 박리 장치 |
JP5870000B2 (ja) * | 2012-09-19 | 2016-02-24 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP6014477B2 (ja) * | 2012-12-04 | 2016-10-25 | 東京エレクトロン株式会社 | 剥離装置、剥離システムおよび剥離方法 |
JP6101084B2 (ja) * | 2013-01-17 | 2017-03-22 | 株式会社ディスコ | 分離装置 |
KR101503325B1 (ko) * | 2013-06-27 | 2015-03-18 | 코스텍시스템(주) | 디바이스 웨이퍼와 캐리어 웨이퍼의 디본딩 방법 및 본딩/디본딩 장치 |
CN107731716A (zh) | 2013-08-30 | 2018-02-23 | 株式会社半导体能源研究所 | 叠层体的加工装置及加工方法 |
JP6223795B2 (ja) * | 2013-11-28 | 2017-11-01 | 日東電工株式会社 | 板の剥離方法 |
JP6145415B2 (ja) * | 2014-02-27 | 2017-06-14 | 東京エレクトロン株式会社 | 剥離方法、プログラム、コンピュータ記憶媒体、剥離装置及び剥離システム |
JP6548871B2 (ja) * | 2014-05-03 | 2019-07-24 | 株式会社半導体エネルギー研究所 | 積層体の基板剥離装置 |
US9925679B2 (en) * | 2014-05-19 | 2018-03-27 | I+D+M Creative, Llc | Devices and methods for assisting with slicing items |
KR102305505B1 (ko) * | 2014-09-29 | 2021-09-24 | 삼성전자주식회사 | 웨이퍼 서포팅 시스템 디본딩 이니시에이터 및 웨이퍼 서포팅 시스템 디본딩 방법 |
JP6345611B2 (ja) * | 2015-02-04 | 2018-06-20 | 東京エレクトロン株式会社 | 剥離装置、剥離システム、剥離方法、プログラム、および情報記憶媒体 |
US10804407B2 (en) | 2016-05-12 | 2020-10-13 | Semiconductor Energy Laboratory Co., Ltd. | Laser processing apparatus and stack processing apparatus |
US11367462B1 (en) | 2019-01-28 | 2022-06-21 | Seagate Technology Llc | Method of laser cutting a hard disk drive substrate for an edge profile alignable to a registration support |
CN116021199B (zh) * | 2023-02-14 | 2023-05-30 | 成都迈特利尔科技有限公司 | 钛板组坯焊接生产线及其压焊方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02263437A (ja) * | 1989-04-03 | 1990-10-26 | Mitsubishi Electric Corp | ウエハ剥し装置 |
JP2000091304A (ja) * | 1998-09-09 | 2000-03-31 | Canon Inc | 試料の分離装置及び分離方法及び分離の監視装置並びに基板の製造方法 |
JP2000188269A (ja) * | 1998-10-16 | 2000-07-04 | Canon Inc | 部材の分離方法及び分離装置並びに基板の製造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2681472B1 (fr) * | 1991-09-18 | 1993-10-29 | Commissariat Energie Atomique | Procede de fabrication de films minces de materiau semiconducteur. |
US5368291A (en) * | 1993-04-30 | 1994-11-29 | Calcomp, Inc. | Media stripper mechanism |
JP3656254B2 (ja) * | 1994-02-28 | 2005-06-08 | 三菱住友シリコン株式会社 | 接着ウエーハの剥離方法及び剥離装置 |
FR2725074B1 (fr) * | 1994-09-22 | 1996-12-20 | Commissariat Energie Atomique | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat |
KR0165467B1 (ko) * | 1995-10-31 | 1999-02-01 | 김광호 | 웨이퍼 디본더 및 이를 이용한 웨이퍼 디본딩법 |
WO1998023164A1 (en) | 1996-11-29 | 1998-06-04 | Unilever Plc | Black leaf tea |
US6382292B1 (en) * | 1997-03-27 | 2002-05-07 | Canon Kabushiki Kaisha | Method and apparatus for separating composite member using fluid |
SG70141A1 (en) * | 1997-12-26 | 2000-01-25 | Canon Kk | Sample separating apparatus and method and substrate manufacturing method |
JP3940806B2 (ja) * | 1998-05-15 | 2007-07-04 | 株式会社ニコン | 光波測距装置 |
US6427748B1 (en) * | 1998-07-27 | 2002-08-06 | Canon Kabushiki Kaisha | Sample processing apparatus and method |
EP0989593A3 (en) | 1998-09-25 | 2002-01-02 | Canon Kabushiki Kaisha | Substrate separating apparatus and method, and substrate manufacturing method |
FR2785217B1 (fr) | 1998-10-30 | 2001-01-19 | Soitec Silicon On Insulator | Procede et dispositif pour separer en deux tranches une plaque de materiau notamment semi-conducteur |
US6326279B1 (en) | 1999-03-26 | 2001-12-04 | Canon Kabushiki Kaisha | Process for producing semiconductor article |
JP3453544B2 (ja) * | 1999-03-26 | 2003-10-06 | キヤノン株式会社 | 半導体部材の作製方法 |
US6318222B1 (en) * | 1999-07-30 | 2001-11-20 | Joseph Bernard Weinman, Jr. | Apparatus and method for uniform even slicing |
US6221740B1 (en) * | 1999-08-10 | 2001-04-24 | Silicon Genesis Corporation | Substrate cleaving tool and method |
US6653205B2 (en) * | 1999-12-08 | 2003-11-25 | Canon Kabushiki Kaisha | Composite member separating method, thin film manufacturing method, and composite member separating apparatus |
US6517130B1 (en) * | 2000-03-14 | 2003-02-11 | Applied Materials, Inc. | Self positioning vacuum chuck |
JP2002050749A (ja) * | 2000-07-31 | 2002-02-15 | Canon Inc | 複合部材の分離方法及び装置 |
US6752053B2 (en) * | 2000-12-15 | 2004-06-22 | Intel Corporation | Method of cutting a tie wrap |
FR2823373B1 (fr) * | 2001-04-10 | 2005-02-04 | Soitec Silicon On Insulator | Dispositif de coupe de couche d'un substrat, et procede associe |
JP2002353423A (ja) * | 2001-05-25 | 2002-12-06 | Canon Inc | 板部材の分離装置及び処理方法 |
-
2002
- 2002-01-03 FR FR0200028A patent/FR2834381B1/fr not_active Expired - Fee Related
-
2003
- 2003-01-02 WO PCT/FR2003/000002 patent/WO2003059591A1/fr active Application Filing
- 2003-01-02 JP JP2003559738A patent/JP4757444B2/ja not_active Expired - Lifetime
- 2003-01-02 DE DE60326700T patent/DE60326700D1/de not_active Expired - Lifetime
- 2003-01-02 TW TW092100002A patent/TWI270133B/zh not_active IP Right Cessation
- 2003-01-02 AU AU2003216776A patent/AU2003216776A1/en not_active Abandoned
- 2003-01-02 AT AT03712201T patent/ATE425853T1/de not_active IP Right Cessation
- 2003-01-02 EP EP03712201A patent/EP1469981B1/fr not_active Expired - Lifetime
-
2004
- 2004-07-01 US US10/883,435 patent/US7182234B2/en not_active Expired - Lifetime
-
2007
- 2007-01-11 US US11/622,053 patent/US8083115B2/en active Active
-
2010
- 2010-12-10 JP JP2010276059A patent/JP2011103471A/ja active Pending
-
2011
- 2011-11-10 US US13/293,772 patent/US8991673B2/en not_active Expired - Lifetime
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH02263437A (ja) * | 1989-04-03 | 1990-10-26 | Mitsubishi Electric Corp | ウエハ剥し装置 |
JP2000091304A (ja) * | 1998-09-09 | 2000-03-31 | Canon Inc | 試料の分離装置及び分離方法及び分離の監視装置並びに基板の製造方法 |
JP2000188269A (ja) * | 1998-10-16 | 2000-07-04 | Canon Inc | 部材の分離方法及び分離装置並びに基板の製造方法 |
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9472437B2 (en) | 2009-04-16 | 2016-10-18 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
US9583374B2 (en) | 2009-04-16 | 2017-02-28 | Suss Microtec Lithography Gmbh | Debonding temporarily bonded semiconductor wafers |
JP2014534640A (ja) * | 2011-10-27 | 2014-12-18 | ズース マイクロテック リトグラフ ゲゼルシャフト ミット ベシュレンクテル ハフツング | 一時的に接着された半導体ウエハの剥離 |
JP2013219328A (ja) * | 2012-03-13 | 2013-10-24 | Tokyo Electron Ltd | 剥離装置、剥離システム、剥離方法、プログラム及びコンピュータ記憶媒体 |
JP2014110387A (ja) * | 2012-12-04 | 2014-06-12 | Tokyo Electron Ltd | 剥離装置、剥離システムおよび剥離方法 |
JP2018505543A (ja) * | 2014-12-05 | 2018-02-22 | エーファウ・グループ・エー・タルナー・ゲーエムベーハー | 基板スタック保持具、容器、および、基板スタックを分割するための方法 |
WO2017026279A1 (ja) * | 2015-08-11 | 2017-02-16 | 東京応化工業株式会社 | 支持体分離装置及び支持体分離方法 |
JPWO2017026279A1 (ja) * | 2015-08-11 | 2018-07-05 | 東京応化工業株式会社 | 支持体分離装置及び支持体分離方法 |
TWI673762B (zh) * | 2015-08-11 | 2019-10-01 | 日商東京應化工業股份有限公司 | 支持體分離裝置及支持體分離方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2003059591A1 (fr) | 2003-07-24 |
TWI270133B (en) | 2007-01-01 |
JP4757444B2 (ja) | 2011-08-24 |
DE60326700D1 (de) | 2009-04-30 |
FR2834381B1 (fr) | 2004-02-27 |
US20050000649A1 (en) | 2005-01-06 |
EP1469981A1 (fr) | 2004-10-27 |
ATE425853T1 (de) | 2009-04-15 |
TW200307320A (en) | 2003-12-01 |
US20120048906A1 (en) | 2012-03-01 |
JP2011103471A (ja) | 2011-05-26 |
US20070119893A1 (en) | 2007-05-31 |
AU2003216776A1 (en) | 2003-07-30 |
EP1469981B1 (fr) | 2009-03-18 |
US8083115B2 (en) | 2011-12-27 |
US7182234B2 (en) | 2007-02-27 |
FR2834381A1 (fr) | 2003-07-04 |
US8991673B2 (en) | 2015-03-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP4757444B2 (ja) | 基板層切断装置及び方法 | |
KR100777847B1 (ko) | 기판-층 절단 장치 및 이것에 관한 방법 | |
KR101267105B1 (ko) | 레이저 가공 방법 및 화합물 반도체 발광 소자의 제조 방법 | |
US7187162B2 (en) | Tools and methods for disuniting semiconductor wafers | |
US7859084B2 (en) | Semiconductor substrate | |
US8470691B2 (en) | Method for cutting substrate and method for manufacturing electronic element | |
US7808059B2 (en) | Semiconductor substrate, and semiconductor device and method of manufacturing the semiconductor device | |
US5279077A (en) | Method for producing semiconductor wafer | |
KR20130103624A (ko) | 단결정 기판 제조 방법 및 내부 개질층 형성 단결정 부재 | |
US11383328B2 (en) | Method for manufacturing peeled substrate | |
KR20190137088A (ko) | 층 구조를 갖는 마이크로전자 컴포넌트들을 생성하기 위한 방법 및 제조 시스템 | |
US11413708B2 (en) | Workpiece cutting method | |
JP6555002B2 (ja) | スクライブラインの検査方法 | |
KR102549961B1 (ko) | 가공 대상물 절단 방법 | |
US20210053157A1 (en) | Workpiece cutting method |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20051107 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20080912 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20081212 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20081219 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20090113 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20090925 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20091225 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100107 |
|
A601 | Written request for extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A601 Effective date: 20100125 |
|
A602 | Written permission of extension of time |
Free format text: JAPANESE INTERMEDIATE CODE: A602 Effective date: 20100201 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20100212 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20100810 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20101210 |
|
A911 | Transfer to examiner for re-examination before appeal (zenchi) |
Free format text: JAPANESE INTERMEDIATE CODE: A911 Effective date: 20110204 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20110506 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20110601 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 4757444 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |
|
FPAY | Renewal fee payment (event date is renewal date of database) |
Free format text: PAYMENT UNTIL: 20140610 Year of fee payment: 3 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
R250 | Receipt of annual fees |
Free format text: JAPANESE INTERMEDIATE CODE: R250 |
|
EXPY | Cancellation because of completion of term |