TWI547988B - 剝離暫時黏合之半導體晶圓 - Google Patents

剝離暫時黏合之半導體晶圓 Download PDF

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TWI547988B
TWI547988B TW104105728A TW104105728A TWI547988B TW I547988 B TWI547988 B TW I547988B TW 104105728 A TW104105728 A TW 104105728A TW 104105728 A TW104105728 A TW 104105728A TW I547988 B TWI547988 B TW I547988B
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wafer
crack
adhesive layer
carrier
carrier wafer
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TW104105728A
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TW201521100A (zh
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葛瑞格 喬治
克里斯多夫 羅森索
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蘇斯微科微影公司
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    • H—ELECTRICITY
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/10—Removing layers, or parts of layers, mechanically or chemically
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00—Ancillary operations in connection with laminating processes
    • B32B38/18—Handling of layers or the laminate
    • B32B38/1858—Handling of layers or the laminate using vacuum
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B32B43/00—Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006—Delaminating
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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)

Description

剝離暫時黏合之半導體晶圓
本申請案主張於2011年10月27日申請之美國臨時申請案第61/552,140號「Debonding Temporary Bonded Semiconductor Wafers」之權利，該案之全文以引用之方式併入本文中。此申請案係由Gregory George在2011年4月12日申請之同在申請中的美國申請案第13/085,159號「Debonding equipment and methods for debonding temporary bonded wafers」之部分接續申請案；該案係由Gregory George等人在2010年4月15日申請之美國申請案第12/761,014號「Debonding equipment and methods for debonding temporary bonded wafers」之部分接續申請案；該案主張2009年4月16日申請之美國臨時申請案第61/169,753號之優先權。前述所有案之全文以引用之方式併入本文中。
本揭示內容之實施例一般係關於改良之剝離設備及方法，且更特定地關於剝離暫時黏合之晶圓。
若干個半導體晶圓程序包含晶圓薄化步驟。在一些應用中，晶圓經薄化而用於製造積體電路(IC)器件。薄晶圓具有製造之IC器件之經改良熱移除及更好電操作之優點。晶圓薄化亦貢獻於縮減器件電容及增加其阻抗，其等兩者導致所製造之器件之一整體大小縮減。在其他 應用中，晶圓薄化用於3D整合黏合及用於製造貫穿晶圓通孔。
晶圓薄化常常經由背面研磨及/或化學機械拋光(CMP)一晶圓而履行。CMP涉及在存在液體漿體時將晶圓表面帶入與一硬且平坦之旋轉水平壓板接觸。漿體常常含有磨料粉，諸如金剛石或碳化矽，連同化學蝕刻劑，諸如氨、氟化物或其等之組合。使用磨料漿體用壓板拋光晶圓使晶圓薄化，而蝕刻劑將表面拋光於次微米級。該晶圓被拋光直到已移除某一量之基板以達成一目標厚度為止。
對於大於200μm之晶圓厚度，該晶圓常常用一夾具固持在適當位置，該夾具利用一真空卡盤或機械附接之一些其他構件。然而，對於小於200μm之晶圓厚度及尤其對於小於100μm之晶圓厚度，變得愈加難以機械固持晶圓，及亦在薄化期間維持控制晶圓之平面性及完整性。在此等情況中，晶圓在CMP期間發展微斷裂且破碎並不少見。
在薄化期間直接固持一晶圓之一替代涉及將該器件晶圓(即，處理之晶圓)附接至一載體晶圓，以支撐及接著使該器件晶圓之暴露之相反表面薄化下來。該載體晶圓與該器件晶圓之間之黏合係暫時的，且該等晶圓在完成薄化(或其他處理步驟)時被分離。
本揭示內容之實施例包含對一器件晶圓與一載體晶圓之間之一黏著劑黏合提供一受控微擾之方法及裝置。此受控微擾在未損壞該器件晶圓(或減小對該器件晶圓之損壞)之下促進兩個晶圓之分離。黏著劑內之此受控微擾(其可為機械、化學、熱、輻射或其等之組合)在該黏著劑層內之一介面處(諸如在一釋放層與該黏著劑之間)或在一晶圓/黏著劑介面處將兩個晶圓連結。可接著藉由履行將該載體晶圓從該器件晶圓受控剝離同時留下該器件晶圓無損傷且未損壞而傳播裂縫。
100‧‧‧系統
104‧‧‧載體晶圓
108‧‧‧黏著劑層
112‧‧‧器件晶圓
116‧‧‧晶圓支撐構造件
120‧‧‧箝制器件
122‧‧‧晶圓接觸表面
124‧‧‧裂縫起始器
126‧‧‧支撐部件
150‧‧‧點
151‧‧‧虛線
152‧‧‧虛線
153‧‧‧虛線
154‧‧‧虛線
155‧‧‧虛線
160‧‧‧斜切晶圓支撐構造件
164‧‧‧帶框
168‧‧‧帶
170‧‧‧卡盤
176‧‧‧撓性板
204‧‧‧傾斜後擋
208‧‧‧階梯形後擋
212‧‧‧扇形後擋
302‧‧‧軸
304‧‧‧圓形尖端
308‧‧‧尖頭狀尖端
312‧‧‧平面尖端
316‧‧‧鋸齒狀尖端
320‧‧‧凹面弓形尖端
404‧‧‧平坦尖端
408‧‧‧楔形尖端
412‧‧‧尖頭狀尖端
416‧‧‧凹面弓形尖端
420‧‧‧圓形尖端
424‧‧‧扇形尖端
圖1A係在一實施例中之暫時黏合至一器件晶圓之一載體晶圓之 一截面圖。
圖1B係在一實施例中之暫時黏合至一器件晶圓之一載體晶圓之一截面圖，其進一步展示該載體晶圓之一晶圓支撐構造件及一箝制器件。
圖1C係在一實施例中之展示使用一裂縫起始器起始一裂縫以剝離一載體晶圓及器件晶圓之一截面圖。
圖1D係在一實施例中之一受控剝離程序中之一裂縫前進之一平面圖。
圖1E係在一實施例中當將該器件晶圓從一黏著劑層剝離時受一箝制器件約束之一載體晶圓之一截面圖。
圖1F係在一實施例中之使用一箝制器件從一黏著劑層剝離之一載體晶圓之一截面圖。
圖1G係在一實施例中之使用一斜切晶圓支撐構造件從一器件晶圓剝離之一載體晶圓之一截面圖。
圖2A至圖2C係在一實施例中之具有不同形狀之一箝制器件之一部分之實例之側面圖及平面圖。
圖3A至圖3E係在一實施例中之一裂縫起始器之實例尖端組態之平面圖(俯視圖)。
圖4A至圖4F係在一實施例中之一裂縫起始器之尖端組態之額外實例之側視圖。
圖5A至圖5C係繪示在一實施例中之用於接合裂縫起始器之不同途徑之側視圖。
該等圖描繪本發明之各種實施例僅出於例證之目的。熟習此項技術者將從以下討論很快地認識到，在未背離本文中所述之本發明之原理之下可運用本文中繪示之結構及方法之替代實施例。
圖1A係藉由一黏著劑層108暫時黏合至一載體晶圓104之一器件晶圓112之一截面圖。本揭示內容之實施例可用於在黏著劑層108中(且較佳地在該黏著劑層108與該器件晶圓112或該載體晶圓104之一介面處)起始及傳播一裂縫，藉此剝離兩個晶圓。
器件晶圓112之實例包含矽晶圓、GaAs、GaN晶圓或任何其他半導體晶圓，尤其作為處理之部分之該等經薄化以變薄至小於100μm。在其他實例中，本揭示內容之實施例可用於剝離甚至更薄且較不機械穩健之器件晶圓112。特定地對於具有小於100μm之一厚度之一器件晶圓112，本揭示內容之實施例可在與該黏著劑層108之一晶圓介面(該器件晶圓112/黏著劑層108介面或該載體晶圓104/黏著劑層108介面)處起始一裂縫，且在未損壞該器件晶圓之下成功將該器件晶圓從該載體晶圓104分離，而不像習知分離技術。隨著晶圓變得更薄，有益的是以一受控方式在兩個黏合晶圓之間起始一裂縫且執行該裂縫之一受控傳播，藉此以一受控方式分離晶圓以便防止損壞該器件晶圓。
在各種應用中，該器件晶圓可薄如50μm或甚至薄如10μm。該器件晶圓112通常具有範圍從50mm至200mm至300mm或更大之一直徑。
該載體晶圓104常常由與該器件晶圓112熱匹配(即，具有近似相同之熱膨脹係數)之一非污染材料製成。載體晶圓材料之實例包含矽、玻璃、藍寶石、石英或具有類似於器件晶圓之機械及熱屬性之其他便利基板材料。較佳地，該載體晶圓104比器件晶圓更厚或另外更機械穩健。接著該載體晶圓104對更易碎(且通常更有價值)之器件晶圓提供機械支撐或添加之機械穩健性。對器件晶圓提供額外機械穩健性係有利的，因為在時常使用載體晶圓時之半導體處理之隨後階段中，該器件晶圓包含已被部分或完全製造之半導體器件。此等器件晶圓表示在製造商之部分之一明顯經濟投資。減小器件晶圓損壞及/或 破碎減小經濟損失。
該黏著劑層108係用於將該載體晶圓104連結至該器件晶圓112之一黏著劑。該黏著劑層108可藉由使用任何數量之黏著劑、聚合及/或低聚合系統(包含聚矽氧、聚醯亞胺、丙烯酸酯及多種熱塑性塑膠)而形成。用於黏著劑層108之一些系統包含多個層，其等可履行超越只是黏合兩個晶圓之功能。在一些實例中，除一黏著劑之外，該黏著劑層108包含鄰近該等晶圓104或112之一者之一釋放層，其促進該黏著劑從一晶圓分離。在其他實例中，該黏著劑層108包含鄰近該等晶圓104或112之一者之一底漆層，其改良該黏著劑與該晶圓之間之黏著。在還有其他實例中，該黏著劑層108包含此等類型之層之兩者，或具有不同機械(例如，模數、斷裂韌度、玻璃轉移溫度)、熱或化學屬性之黏著劑之多個層。使用多個層之不同黏著劑、底漆及/或釋放層可裁製該黏著劑層108之屬性，藉此無論該等晶圓之特定幾何及機械屬性而促進該等晶圓104及112從彼此受控分離。
該黏著劑層108之厚度一般係施加於該晶圓之特定黏著劑系統、(如受該黏著劑系統及晶圓104及112之機械屬性影響之)所施加之量、該器件晶圓上之特徵之形貌及其他類似因素之一函數。在薄化應用中，該器件晶圓112之處理之表面(即，具有形貌之表面)通常面對該黏著劑層108，且暴露該器件晶圓之未處理或背側以薄化。在一實施例中，該黏著劑層108之厚度足夠用於在該器件晶圓112之表面特徵之上提供一近似10μm至15μm之黏著劑條帶。一器件晶圓上之實例表面特徵包含但不限於C4凸塊、微凸塊及一半導體器件之其他電活性特徵。
可影響該黏著劑層108之厚度之其他因素包含用於該黏著劑層中之層之類型、該等層之斷裂韌性、施加至該晶圓之黏著劑成分之黏度及表面張力、所使用之黏著劑施加方法及其他類似因素。該黏著劑層 較佳地提供相對於施加於該黏著劑層與該等晶圓104及112之間之剪切應力(即，在平行於該黏著劑層之一方向上)係特定地強且相對於施加於分離該兩個晶圓之一法線應力沒有如此強之黏著。
該黏著劑層108經施加使得該器件晶圓112之暴露表面及該載體晶圓104之暴露表面(即，不接觸該黏著劑層之兩個表面)在一些實例中在近似4μm內平行。在其他實例中，該器件晶圓112及該載體晶圓104在近似1μm內或小於跨兩個晶圓堆疊之總厚度變動之1μm平行。
剝離系統
圖1B繪示藉由在最接近一晶圓/黏著劑層介面之黏著劑層108之一邊緣處使用一受控之機械、化學、熱或輻射微擾起始一裂縫(或裂紋)而用於將該載體晶圓104從該器件晶圓112剝離之一系統100之一高級實施例。除圖1A中引入之元件之外，該系統100包含一晶圓支撐構造件116、一箝制器件120及一裂縫起始器124。
該晶圓支撐構造件116對於該載體晶圓104及/或該晶圓堆疊104/112提供結構支撐。該晶圓支撐構造件116亦可提供一結構，該箝制器件120附接至該結構。一第二晶圓支撐構造件可用於支撐該器件晶圓112。為清晰起見，圖1B中未展示該第二晶圓支撐構造件。一個設計基於美國申請案第13/085,159號之圖30至圖41中描述之機械剝離器，該案以引用之方式併入本文中。圖1B中之該晶圓支撐構造件116係該機械剝離器之撓性板(項目253)，且該第二晶圓支撐構造件(圖1B中未展示)係該機械剝離器之多孔真空卡盤(項目256)。
該裂縫起始器124用於在該黏著劑層108與該載體晶圓104或該器件晶圓112之間開始於該黏著劑層之一邊緣處而起始及/或傳播一裂縫。此繪示於圖1C中。該裂縫用作該等晶圓104及112之一受控剝離程序之部分。
在一受控剝離程序中，裂縫以一受控方式(例如近似為一線)前 進，如圖1D中所示。圖1D展示該器件晶圓112之一平面圖(俯視圖)。該裂縫起始器124在點150處起始裂縫。在圖1D中該裂縫接著從右傳播至左。該裂縫傳播可為施加至兩個晶圓以將其等分離之法線應力及/或進一步使用裂縫起始器124之結果。虛線151至155展示隨時間之裂縫傳播。每一虛線表示在一不同時間點之裂縫之前緣。對於每一虛線，在該時間點，該兩個晶圓被分離至虛線之右，且其等仍然一起黏合至虛線之左。在此實例中，隨著裂縫傳播，該裂縫之前緣實質上保持直的。此一受控剝離可藉由例如美國申請案第13/085,159號之圖30至圖41中描述之機械剝離器達成。
該裂縫並非總是需要在相同點起始。例如，該裂縫起始器124可係可定位至沿著該黏著劑層之邊緣之不同點。有可能該裂縫起始器124可相對於該晶圓堆疊而重新定位，或在不同位置處有多個裂縫起始器，或該晶圓堆疊可相對於該裂縫起始器重新定位。在一途徑中，該晶圓堆疊可相對於該裂縫起始器而旋轉，因此允許該裂縫起始器嘗試不同位置以進行裂縫起始。
在實際裂縫起始之前亦可有多個起始。例如，該裂縫起始器可在裂縫起始之前多次接合相同點，每次施加更大壓力，或從一不同角度或方向逼近。交替地，該裂縫起始器可在裂縫起始之前接合多個不同點。在一程序中，該裂縫起始器在一點處接合及脫離，該晶圓堆疊略微旋轉，該裂縫起始器接著接合及脫離新點，等等直到裂縫起始為止。
返回圖1，在一些實施例中，該晶圓支撐構造件116係平面的且剛性的。例如，若該晶圓支撐構造件116係在CMP期間用於固持黏合之晶圓之一可攜式卡盤，則該晶圓支撐構造件116較佳地係平面的且剛性的。若在剝離期間使用相同晶圓支撐構造件116，則使該器件晶圓112「剝落」離開該載體晶圓104，如圖1E中所示。該裂縫起始器124 開始剝落。在剝離程序期間，該箝制器件120機械地約束該載體晶圓104。
雖然該晶圓支撐構造件116可為平面的及/或剛性的，但是該晶圓支撐構造件之一些實例係可撓性的，如圖1F中所示。一個實例係描述於美國申請案第13/085,159號之圖30至圖41中之機械剝離器。在該實施例中，該晶圓支撐構造件係一撓性板176。該器件晶圓112由其自身之卡盤170固定(例如，一多孔真空卡盤、因為該器件晶圓如此薄)。該器件晶圓112被剝離至由帶框164固持之帶168上。
該撓性板176可例如藉由撓曲該載體晶圓104離開該器件晶圓112而用於將該黏著劑層108(或更明確而言，一黏著劑層/晶圓介面)暴露至裂縫起始器124。除藉由撓曲該載體晶圓104而暴露該黏著劑層108之外，該載體晶圓104之撓曲亦在該黏著劑層上行使一近似法線應力。藉由經由該撓性板176撓曲該載體晶圓104而造成之此法線應力可單獨或與該裂縫起始器124組合而促進或起始裂縫生長。此外，使用該箝制器件120及該撓性板176以在該載體晶圓104及該黏著劑層108上行使一應力，該箝制器件可用於控制該裂縫尖端之傳播，使得該載體晶圓以一受控之釋放而從該器件晶圓112分離。
該箝制器件120用於將該載體晶圓104實體固定至該撓性板176，藉此在從該器件晶圓112分離期間對該載體晶圓提供額外機械穩定性及安全性。在此情況中，該載體晶圓104亦可經由一真空、一個或多個夾持器或其他可釋放連接而附接至該撓性板。藉由對該載體晶圓104提供此實體安全性，該箝制器件120在晶圓處理期間或晶圓之分離期間幫助防止損壞載體晶圓及器件晶圓112之一者或兩者。
該箝制器件120亦可用於在該載體晶圓從該器件晶圓112分離期間將一應力施加至該載體晶圓104。在圖1F中，例如，該箝制器件120可施加近似垂直於該載體晶圓104之平面之一應力，如上文所述，該應 力撓曲該載體晶圓。由此法線應力產生之載體晶圓104之所得應變可暴露該黏著劑層108，以由該裂縫起始器124更好地出入，或可在該黏著劑層與該等晶圓104及/或112之一者或兩者之間起始裂縫。
一旦裂縫被起始，無論透過該箝制器件120之動作或與其無關，由該箝制器件施加於該載體晶圓104上之一應力用於提供該載體晶圓從該器件晶圓112之一受控分離。例如，一旦裂縫被起始，可藉由提供受控之連續應力而控制該裂縫之前緣之傳播。一旦該裂縫傳播至目標位置或介面，該應力及/或該應變速率可被減小以維持沿著該目標路徑之該裂縫之軌跡。
圖1G展示對於器件晶圓112使用一斜切晶圓支撐構造件160。在此實例中，該器件晶圓112被剝離至由帶框164固持之帶168上。該斜切形狀允許更容易地出入該黏著劑層之邊緣以進行裂縫起始。例如，初期該晶圓堆疊可在該帶168之右側上接合。其可接著跨該斜切表面從右至左「擺動」。此將施加與圖1F之剝落運動類似之一應力。
該箝制器件120包含接觸該載體晶圓104之一晶圓接觸表面122，藉此固定其或將一應力或應變施加至其，如上文所述。現在轉至圖2A至圖2C，該晶圓接觸表面122之形狀可經調適為載體晶圓104之特定結構或機械屬性。除一側截面圖之外，圖2B至圖2C展示一平面圖。如圖2A至圖2C中所示，該晶圓接觸表面122可包含一傾斜後擋204、一階梯形後擋208或一扇形後擋212。此等不同後擋輪廓可根據與該載體晶圓104之所要接觸之量或類型而選擇。在平面圖中，該箝制器件可具有一直後擋(如圖2B中所示)或符合晶圓形狀之一彎曲後擋(如圖2C中所示)。對比於僅可接觸該晶圓之周界邊緣之一部分之該直後擋，該保形後擋與載體晶圓104在晶圓邊緣處具有一較大接觸面積。此等三個實例後擋僅作為實例呈現。其他輪廓或後擋形狀之晶圓接觸表面122係可行的，且可混合不同平面及側視圖。例如，圖2B之 階梯形後擋208可與圖2C之保形平面圖組合。
裂縫起始器裝置
如上文所述，該裂縫起始器124用於起始及/或傳播開始於該黏著劑層之一邊緣且較佳地位於該黏著劑層108與該載體晶圓104或該器件晶圓112之間之一裂縫。該裂縫用作該等晶圓104及112之一受控剝離程序之部分。在一受控剝離程序中，該裂縫之前緣近似以一線之形狀前進，如圖1D中所示。可例如藉由使用機械、熱、化學及/或輻射構件而提供來自該裂縫起始器124之受控微擾。在另一態樣中，該裂縫起始器124可用於從該器件晶圓112傳導電荷，藉此減小一靜電放電損壞該器件晶圓上之積體電路之風險。
在一實例中，該裂縫起始器124藉由簡單地撞擊在該黏著劑層與該器件晶圓112或該載體晶圓104之間之一介面處而起始裂縫。此在此介面處機械地引入一裂縫。此機械微擾可藉由該裂縫起始器124之形狀及藉由控制微擾輸送之力、速度、角度，微擾之位置，微擾之添加類型(熱、化學等等)、微擾之深度及/或裂縫起始器之加速度而控制。不同尖端組態在下文中更詳細討論。
在該黏著劑層108包含黏彈性層或成分之實例中，該裂縫起始器124穿透黏著劑材料層之速率可影響裂縫之起始、傳播及特性。例如，若用於該黏著劑層108之材料係強黏彈性的，則該裂縫起始器可以一相對較高速度及/或加速度引入一受控機械微擾，以將一裂縫引入至該黏著劑層中，或在材料之玻璃狀體系中該黏著劑層/晶圓介面之邊緣處。在此實例中將一低速度及/或低加速度機械微擾提供至一高黏彈性黏著劑層108可能無法在介面處使該黏著劑層破裂，或用一鈍的裂縫尖端產生一裂縫(因此減小在該裂縫尖端處之應力集中)。此從而可增加傳播該裂縫所需之能量，藉此增加在載體晶圓104及器件晶圓112上之應力及損壞之風險。
在另一實例中，該裂縫起始器124可使用諸如由一壓電換能器產生之一超音波或超音波振盪頻率在該黏著劑層108/晶圓104或112介面之邊緣處提供一機械微擾。該壓電換能器可作為一分離器件整合至該裂縫起始器124中，或該裂縫起始器之一尖端自身可為由一遠端定位之控制器致動之一壓電換能器。該超音波機械微擾可例如藉由在材料較不延展或較不能吸收由裂縫起始器124提供之能量之一體系中擾動黏著劑材料而促進裂縫起始。
在又另一實例中，該裂縫起始器124藉由對該黏著劑層提供一受控熱微擾而起始一裂縫。在一些實例中，該裂縫起始器124傳導來自一遠端熱源之熱或包含一加熱元件。在任一情況中，該裂縫起始器124可將熱輸送至該黏著劑層，藉此對該黏著劑層108提供一受控熱微擾，其可用於起始將該載體晶圓104從該器件晶圓112受控地釋放。該受控熱微擾可例如藉由融化該黏著劑層108之一部分，升高該黏著劑層之一部分而在用作該黏著劑層之一或多層之一材料之一玻璃轉移溫度以上或燃燒該黏著劑層之一部分而起始晶圓之此受控釋放。
在還有又另一實例中，並非藉由加熱該黏著劑層108之一部分而引入一受控熱微擾，該裂縫起始器124可藉由使用一整合或遠端定位之冷卻源冷卻該黏著劑層而引入一受控熱微擾。在此實例之一實施例中，該裂縫起始器124可冷卻包含一玻璃轉移溫度以下之一黏彈性材料之一黏著劑層108，藉此使該材料較不順應及/或減小其斷裂韌度。該黏著劑層之此冷凝部分對比於其玻璃轉移溫度以上之材料可更容易地破裂。冷卻之方法包含使用該裂縫起始器124以將一致冷劑或冷凍劑(諸如醚、液體氮或固體二氧化碳)輸送至該黏著劑層108及/或使用一遠端冷卻之裂縫尖端起始器作為一散熱器以傳導來自該黏著劑層之熱。
在其他實施例中，當足夠冷卻時，即使一非黏彈性材料也可具有 一減小之斷裂韌度或增加之脆弱性。在一些實例中，冷卻使用於該黏著劑層108中之非黏彈性材料減小彈性模數，其可增加裂縫尖端處之應力集中，藉此減少斷裂能量。在還有其他實施例中，冷卻該黏著劑層108可與一受控機械微擾組合以藉由增加該黏著劑層之脆弱性(或減小其斷裂韌度)及接著機械擾動該黏著劑層而起始一裂縫。
在又另一實例中，該裂縫起始器124藉由對該黏著劑層提供一受控化學微擾而起始一裂縫。在一實施例中，用於提供微擾之化學品回應於該黏著劑系統之成分而選擇。即，此實施例中之化學品經選擇為用於該黏著劑層108或該黏著劑層內之一或多層(諸如釋放層或底漆層)之一溶劑或潤脹劑。藉由提供削弱該黏著劑層108之黏著劑屬性或該層(或其內之層)之結構完整性之一化學品，可藉由使用該箝制器件將一應力或應變施加至該載體晶圓而履行載體晶圓104從該器件晶圓112之受控釋放。
在一實施例中，可使用該裂縫起始器124作為接著呈現給該黏著劑層108之一流體化學品之一導管而輸送該受控化學微擾。該化學品可藉由毛細管作用或藉由裂縫起始器124藉由被注入而被吸進至一現成之裂縫中，藉此促進裂縫生長。在另一實施例中，可提供該化學品至某些或所有與該器件晶圓112粗略同心之暴露之黏著劑層108。此可接著削弱該黏著劑層108之周邊周圍之介面，啟用使用箝制器件120以將一應力行使於該載體晶圓104上之一受控剝離，藉此拉動該載體晶圓離開該削弱之黏著劑。
在還有又另一實例中，該裂縫起始器124可包含一輻射輸送器件，其可用於照射該黏著劑層108作為起始一裂縫之部分。所輸送之輻射可與所使用之黏著劑材料組合選擇，且可包含紅外線輻射、可見輻射或紫外線輻射(例如使用一光纖從一源輸送)以及微波輻射或其他頻率之電磁輻射。在一實施例中，紅外線輻射可用於對該黏著劑層 108提供熱能量以促進剝離。在另一實施例中，對該黏著劑層108提供紫外線輻射以促進一光學活性黏著劑(例如，聚合或低聚合系統，包含甲基丙烯酸酯)之斷鏈，藉此減小黏著且減小將該載體晶圓104從該器件晶圓112分離所需之能量的量。如別處所述，輻射之輸送可與其他機構組合，以在該黏著劑層108處起始及傳播一裂縫。
裂縫起始器尖端
圖3A至圖3E係裂縫起始器124之多種截面之平面圖(俯視圖)，所示之每一起始器具有一不同尖端。可基於該晶圓介面處之黏著劑層108之斷裂屬性及/或用於起始及傳播一裂縫之(若干)其他裂縫起始技術(諸如上文所述之技術)而選擇該裂縫起始器124及其尖端。如所展示，該裂縫起始器包含一軸302，其可連接至一圓形尖端304，一尖頭狀尖端308、一平面尖端312、一鋸齒狀尖端316或一凹面弓形尖端320。該等軸302在圖3A至圖3E中全部展示為相同寬度，但該等寬度亦可變化。例如，若目的只是起始裂縫，則可使用一更窄之裂縫起始器。若其在起始之後亦將用於進一步傳播該裂縫，則可使用一更寬之裂縫起始器。
在一實施例中，該尖頭狀尖端308可經選擇以例如在一脆弱黏著劑層108中起始一裂縫。在另一實施例中，該尖頭狀尖端308可用於與在裂縫起始之前或期間增加黏著劑層108之脆弱性(或減小其斷裂韌度)之一冷卻熱微擾組合而在該黏著劑層中起始一裂縫。在另一實施例中，該圓形尖端304可經選擇以例如適應對該黏著劑層108提供一化學或輻射微擾之一化學或輻射輸送系統(諸如一管、通道或毛細管)。在還有又另一實施例中，該鋸齒狀尖端316可經選擇以在該黏著劑層108中起始多個裂縫。此等實例僅提供作為選擇該裂縫起始器124之一特定尖端形狀之一些理由之例證。
在一些實例中，該裂縫起始器124經組態以在該黏著劑層108內之 一目標位置處起始一裂縫。此之益處在於，隨著行業中使用之黏著劑系統之多樣性增加及/或黏著劑層108中之子層之數量增加，在該黏著劑層中之一目標位置處引入一裂縫可在未損壞該等晶圓之一者或兩者之下改良將該載體晶圓104從該器件晶圓112分離之能力。
例如，對於黏著劑層108包含鄰近該器件晶圓之一釋放層之情況，最接近該器件晶圓112而起始一裂縫可為有利的。該釋放層減小將該載體晶圓104從該器件晶圓112分離所需之能量。減小分離之能量可在未損壞之下增加該器件晶圓112從該載體晶圓104分離之可能性。
在一些實例中可藉由使用經組態以在目標位置處或靠近目標位置引入一機械、熱、化學或輻射微擾之一裂縫起始器124而促進在該黏著劑層108內之一目標位置處或靠近該目標位置起始一裂縫。此之一益處在於，對於包含一釋放層之黏著劑系統，一微擾當經輸送而最接近該釋放層時將對於晶圓之一受控剝離更有效，藉此在需要較少能量以剝離之一介面處或靠近該介面起始一裂縫。
圖4A至圖4F係裂縫起始器124之多種截面之側視圖，所示之每一起始器具有一不同尖端。如所示，該裂縫起始器包含一軸302，其可連接至一平坦尖端404、一楔形尖端408、一尖頭狀尖端412、一凹面弓形尖端416、一圓形尖端420或一扇形尖端424。此等側視截面圖之任何者可與圖3A至圖3E之俯視截面圖組合。
該裂縫起始器124可以不同方式使用。在圖5A中，該裂縫起始器124之一第一面置於最接近該載體晶圓104之表面，藉此將該楔形形狀尖端置於最接近該晶圓/黏著劑介面。此組態接著在該目標介面處或靠近該目標介面輸送微擾(無論機械、熱、化學、輻射或其等之組合)，其意欲用於將該載體晶圓104從該器件晶圓112分離。
該裂縫起始器124呈現給該黏著劑層108之角度亦可促進最接近該黏著劑層之一目標位置提供一微擾。在圖5B中，該裂縫起始器124相 對於一晶圓(該黏著劑層將要從該晶圓剝離)以一銳角呈現給該黏著劑層108。此之一個益處在於該裂縫起始器124可在沒有與系統之其他組件(諸如一切割框、切割帶、箝制器件及/或系統之其他組件)纏繞之下呈現給該黏著劑層。
該裂縫起始器124亦可使用一可撓性或順應軸或其他支撐部件而呈現給該黏著劑層108。使用一可撓性支撐部件具有允許該裂縫起始器124由該系統之其他特徵導引至一目標位置之優點。在圖5C中，可藉由撓曲該支撐部件126同時將該裂縫起始器124朝該介面平移而將該裂縫起始器124導引至一晶圓/黏著劑層介面。撓曲該支撐部件126維持與該載體晶圓之接觸，直到接觸鄰近該晶圓表面之黏著劑層為止。
已出於例證之目的呈現本發明之實施例之前述描述；其並非意欲為詳盡的，或將本發明限制於所揭示之精確形式。熟習此項技術者可瞭解，按照上文之揭示內容，許多修改及變動係可行的。
104‧‧‧載體晶圓
108‧‧‧黏著劑層
112‧‧‧器件晶圓
120‧‧‧箝制器件
164‧‧‧帶框
168‧‧‧帶
170‧‧‧卡盤
176‧‧‧撓性板

Claims (18)

  1. 一種用於將一器件晶圓從一載體晶圓剝離(debonding)之方法，該載體晶圓之一第一側係藉由一黏著劑層暫時黏合至該器件晶圓，該方法包括：藉由使用一裂縫起始器施加一微擾(perturbation)而在靠近該黏著劑層之一邊緣處起始一裂縫；及施加一垂直於該載體晶圓之該第一側之受控力，該受控力撓曲(flex)該載體晶圓之該第一側離開該器件晶圓以控制該裂縫之傳播。
  2. 如請求項1之方法，其中該受控力係施加至該載體晶圓之該第一側之一周界邊緣(perimeter edge)。
  3. 如請求項1之方法，其中該器件晶圓具有小於50微米之一厚度。
  4. 如請求項1之方法，其中該器件晶圓具有小於10微米之一厚度。
  5. 如請求項1之方法，其中包含該器件晶圓、該載體晶圓及該黏著劑層之一晶圓堆疊具有小於1微米之一總厚度變動。
  6. 如請求項1之方法，其中撓曲該載體晶圓離開該器件晶圓使該裂縫以一實質上直的前緣(leading edge)傳播。
  7. 一種用於將一器件晶圓從一載體晶圓剝離之方法，其包括：使用一黏著劑層將該載體晶圓之一第一側暫時黏合至一器件晶圓，該器件晶圓具有小於10微米之一厚度；藉由使用一裂縫起始器施加一微擾而在靠近該黏著劑層之一邊緣處起始一裂縫；及施加一垂直於該載體晶圓之該第一側之受控力，該受控力撓曲該載體晶圓之該第一側離開該器件晶圓以控制該裂縫之傳播。
  8. 如請求項7之方法，其中該受控力係施加至該載體晶圓之該第一 側之一周界邊緣。
  9. 如請求項7之方法，其中該器件晶圓具有小於50微米之一厚度。
  10. 如請求項7之方法，其中該器件晶圓具有小於10微米之一厚度。
  11. 如請求項7之方法，其中包含該器件晶圓、該載體晶圓及該黏著劑層之一晶圓堆疊具有小於1微米之一總厚度變動。
  12. 如請求項7之方法，其中撓曲該載體晶圓離開該器件晶圓使該裂縫以一實質上直的前緣傳播。
  13. 一種用於將一器件晶圓從一載體晶圓剝離之方法，該載體晶圓之一第一側係藉由一黏著劑層暫時黏合至該器件晶圓，該方法包括：藉由使用一裂縫起始器施加一微擾而在靠近該黏著劑層之一邊緣處起始一裂縫；使用一箝制(holdback)器件在(1)該載體晶圓之一周緣(circumferential edge)處及在(2)該載體晶圓之該第一側處接觸該載體晶圓；及使用該箝制器件施加一垂直於該載體晶圓之該第一側之受控力，該受控力撓曲該載體晶圓之該第一側離開該器件晶圓以控制該裂縫之傳播。
  14. 如請求項13之方法，其中該受控力係施加至該載體晶圓之該第一側之一周界邊緣。
  15. 如請求項13之方法，其中該器件晶圓具有小於50微米之一厚度。
  16. 如請求項13之方法，其中該器件晶圓具有小於10微米之一厚度。
  17. 如請求項13之方法，其中包含該器件晶圓、該載體晶圓及該黏著劑層之一晶圓堆疊具有小於1微米之一總厚度變動。
  18. 如請求項13之方法，其中撓曲該載體晶圓離開該器件晶圓使該裂縫以一實質上直的前緣傳播。
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