JP2014506001A5 - - Google Patents

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JP2014506001A5
JP2014506001A5 JP2013543385A JP2013543385A JP2014506001A5 JP 2014506001 A5 JP2014506001 A5 JP 2014506001A5 JP 2013543385 A JP2013543385 A JP 2013543385A JP 2013543385 A JP2013543385 A JP 2013543385A JP 2014506001 A5 JP2014506001 A5 JP 2014506001A5
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JP
Japan
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dielectric layer
capacitor
metal element
forming
openings
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JP2013543385A
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English (en)
Japanese (ja)
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JP2014506001A (ja
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Priority claimed from US12/964,049 external-priority patent/US8502340B2/en
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Publication of JP2014506001A publication Critical patent/JP2014506001A/ja
Publication of JP2014506001A5 publication Critical patent/JP2014506001A5/ja
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JP2013543385A 2010-12-09 2011-12-09 高密度３次元集積コンデンサ Pending JP2014506001A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/964,049 2010-12-09
US12/964,049 US8502340B2 (en) 2010-12-09 2010-12-09 High density three-dimensional integrated capacitors
PCT/US2011/064219 WO2012079013A1 (en) 2010-12-09 2011-12-09 High density three-dimensional integrated capacitors

Publications (2)

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JP2014506001A JP2014506001A (ja) 2014-03-06
JP2014506001A5 true JP2014506001A5 (enExample) 2015-01-29

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JP2013543160A Active JP5895000B2 (ja) 2010-12-09 2011-07-14 高密度３次元集積コンデンサ
JP2013543385A Pending JP2014506001A (ja) 2010-12-09 2011-12-09 高密度３次元集積コンデンサ
JP2016037049A Active JP6329977B2 (ja) 2010-12-09 2016-02-29 高密度３次元集積コンデンサ

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JP2013543160A Active JP5895000B2 (ja) 2010-12-09 2011-07-14 高密度３次元集積コンデンサ

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JP2016037049A Active JP6329977B2 (ja) 2010-12-09 2016-02-29 高密度３次元集積コンデンサ

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US (5) US8502340B2 (enExample)
EP (3) EP2649639B1 (enExample)
JP (3) JP5895000B2 (enExample)
KR (4) KR101108947B1 (enExample)
CN (3) CN103348442B (enExample)
TW (1) TWI479522B (enExample)
WO (2) WO2012078213A1 (enExample)

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