JP2014146840A5 - - Google Patents

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Publication number
JP2014146840A5
JP2014146840A5 JP2014085714A JP2014085714A JP2014146840A5 JP 2014146840 A5 JP2014146840 A5 JP 2014146840A5 JP 2014085714 A JP2014085714 A JP 2014085714A JP 2014085714 A JP2014085714 A JP 2014085714A JP 2014146840 A5 JP2014146840 A5 JP 2014146840A5
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JP
Japan
Prior art keywords
layer
electrode
free layer
surface area
tunnel barrier
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JP2014085714A
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Japanese (ja)
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JP2014146840A (ja
JP5710821B2 (ja
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Priority claimed from US12/423,298 external-priority patent/US8344433B2/en
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Publication of JP2014146840A5 publication Critical patent/JP2014146840A5/ja
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Publication of JP5710821B2 publication Critical patent/JP5710821B2/ja
Expired - Fee Related legal-status Critical Current
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JP2014085714A 2009-04-14 2014-04-17 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ） Expired - Fee Related JP5710821B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US12/423,298 2009-04-14
US12/423,298 US8344433B2 (en) 2009-04-14 2009-04-14 Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same

Related Parent Applications (1)

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JP2012506175A Division JP5584754B2 (ja) 2009-04-14 2010-04-14 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2015042183A Division JP6196250B2 (ja) 2009-04-14 2015-03-04 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）

Publications (3)

Publication Number Publication Date
JP2014146840A JP2014146840A (ja) 2014-08-14
JP2014146840A5 true JP2014146840A5 (enExample) 2014-09-25
JP5710821B2 JP5710821B2 (ja) 2015-04-30

Family

ID=42933702

Family Applications (3)

Application Number Title Priority Date Filing Date
JP2012506175A Expired - Fee Related JP5584754B2 (ja) 2009-04-14 2010-04-14 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）
JP2014085714A Expired - Fee Related JP5710821B2 (ja) 2009-04-14 2014-04-17 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）
JP2015042183A Expired - Fee Related JP6196250B2 (ja) 2009-04-14 2015-03-04 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）

Family Applications Before (1)

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JP2012506175A Expired - Fee Related JP5584754B2 (ja) 2009-04-14 2010-04-14 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2015042183A Expired - Fee Related JP6196250B2 (ja) 2009-04-14 2015-03-04 磁気トンネル接合（ｍｔｊ）および方法、およびこれらを使用する磁気ランダムアクセスメモリ（ｍｒａｍ）

Country Status (9)

Country Link
US (2) US8344433B2 (enExample)
EP (1) EP2419933B1 (enExample)
JP (3) JP5584754B2 (enExample)
KR (1) KR101390940B1 (enExample)
CN (2) CN107093449B (enExample)
BR (1) BRPI1013772B1 (enExample)
ES (1) ES2487627T3 (enExample)
TW (1) TWI474472B (enExample)
WO (1) WO2010120918A2 (enExample)

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US8982613B2 (en) 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
WO2014209402A1 (en) * 2013-06-29 2014-12-31 Intel Corporation Magnetic element for memory and logic
US9203017B2 (en) 2013-08-02 2015-12-01 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including a package structure usable in spin transfer torque memories
US9042060B2 (en) 2013-09-25 2015-05-26 HGST Netherlands B.V. Magnetic head having a long throat height pinned layer with a short height hard bias layer
KR20150095187A (ko) * 2014-02-11 2015-08-20 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조
WO2016007126A1 (en) 2014-07-07 2016-01-14 Intel Corporation Spin-transfer torque memory (sttm) devices having magnetic contacts
US10026888B2 (en) * 2014-08-06 2018-07-17 Toshiba Memory Corporation Magnetoresistive effect element and magnetic memory
KR102276541B1 (ko) * 2014-11-27 2021-07-13 삼성전자주식회사 자기 메모리 장치 및 이의 제조 방법
KR101705962B1 (ko) 2015-01-19 2017-02-14 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조 및 이를 포함하는 자성소자
US9583170B2 (en) 2015-02-12 2017-02-28 Qualcomm Incorporated Adjusting resistive memory write driver strength based on a mimic resistive memory write operation
US9813049B2 (en) * 2015-08-12 2017-11-07 Qualcomm Incorporated Comparator including a magnetic tunnel junction (MTJ) device and a transistor
US9666792B2 (en) 2015-08-12 2017-05-30 Qualcomm Incorporated Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements
CN106229004B (zh) * 2016-07-11 2018-08-28 北京航空航天大学 一种光写入的非易失性磁存储器
US9853205B1 (en) * 2016-10-01 2017-12-26 International Business Machines Corporation Spin transfer torque magnetic tunnel junction with off-centered current flow
CN109952662B (zh) * 2016-10-25 2023-04-18 三星电子株式会社 自旋器件及其操作方法和制造方法
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US9985199B1 (en) * 2017-03-15 2018-05-29 International Business Machines Corporation Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield
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US10790016B2 (en) 2018-03-02 2020-09-29 Western Digital Technologies, Inc. Probabilistic neuron circuits
US10200058B1 (en) 2018-04-24 2019-02-05 Sandisk Technologies Llc Analog-to-digital conversion with magnetic tunnel junctions
US10732933B2 (en) 2018-05-10 2020-08-04 Sandisk Technologies Llc Generating random bitstreams with magnetic tunnel junctions
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