KR101390940B1 - 자기 터널 접합（ｍｔｊ） 및 방법들, 및 이를 이용하는 자기 랜덤 액세스 메모리（ｍｒａｍ） - Google Patents

자기 터널 접합（ｍｔｊ） 및 방법들, 및 이를 이용하는 자기 랜덤 액세스 메모리（ｍｒａｍ） Download PDF

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KR101390940B1
KR101390940B1 KR1020117027104A KR20117027104A KR101390940B1 KR 101390940 B1 KR101390940 B1 KR 101390940B1 KR 1020117027104 A KR1020117027104 A KR 1020117027104A KR 20117027104 A KR20117027104 A KR 20117027104A KR 101390940 B1 KR101390940 B1 KR 101390940B1
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mtj
electrode
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KR20120006056A (ko
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샤오춘 주
매튜 노와크
시아 리
승 에이치. 강
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퀄컴 인코포레이티드
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
KR1020117027104A 2009-04-14 2010-04-14 자기 터널 접합（ｍｔｊ） 및 방법들, 및 이를 이용하는 자기 랜덤 액세스 메모리（ｍｒａｍ） Active KR101390940B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/423,298 US8344433B2 (en) 2009-04-14 2009-04-14 Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
US12/423,298 2009-04-14
PCT/US2010/031080 WO2010120918A2 (en) 2009-04-14 2010-04-14 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same

Publications (2)

Publication Number Publication Date
KR20120006056A KR20120006056A (ko) 2012-01-17
KR101390940B1 true KR101390940B1 (ko) 2014-05-02

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Country Status (9)

Country Link
US (2) US8344433B2 (enExample)
EP (1) EP2419933B1 (enExample)
JP (3) JP5584754B2 (enExample)
KR (1) KR101390940B1 (enExample)
CN (2) CN107093449B (enExample)
BR (1) BRPI1013772B1 (enExample)
ES (1) ES2487627T3 (enExample)
TW (1) TWI474472B (enExample)
WO (1) WO2010120918A2 (enExample)

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US10158065B2 (en) 2014-07-07 2018-12-18 Intel Corporation Spin-transfer torque memory (STTM) devices having magnetic contacts
US10026888B2 (en) * 2014-08-06 2018-07-17 Toshiba Memory Corporation Magnetoresistive effect element and magnetic memory
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KR101705962B1 (ko) 2015-01-19 2017-02-14 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조 및 이를 포함하는 자성소자
US9583170B2 (en) 2015-02-12 2017-02-28 Qualcomm Incorporated Adjusting resistive memory write driver strength based on a mimic resistive memory write operation
US9666792B2 (en) 2015-08-12 2017-05-30 Qualcomm Incorporated Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements
US9813049B2 (en) * 2015-08-12 2017-11-07 Qualcomm Incorporated Comparator including a magnetic tunnel junction (MTJ) device and a transistor
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Also Published As

Publication number Publication date
CN102388454B (zh) 2016-11-02
JP5710821B2 (ja) 2015-04-30
JP2012524415A (ja) 2012-10-11
KR20120006056A (ko) 2012-01-17
CN107093449B (zh) 2021-04-09
CN102388454A (zh) 2012-03-21
JP2015109480A (ja) 2015-06-11
BRPI1013772B1 (pt) 2019-10-29
WO2010120918A3 (en) 2011-01-20
US20100258887A1 (en) 2010-10-14
EP2419933B1 (en) 2014-06-18
TWI474472B (zh) 2015-02-21
JP6196250B2 (ja) 2017-09-13
JP2014146840A (ja) 2014-08-14
EP2419933A4 (en) 2013-04-03
US8889431B2 (en) 2014-11-18
WO2010120918A2 (en) 2010-10-21
JP5584754B2 (ja) 2014-09-03
TW201106468A (en) 2011-02-16
EP2419933A2 (en) 2012-02-22
US8344433B2 (en) 2013-01-01
US20130134533A1 (en) 2013-05-30
BRPI1013772A2 (pt) 2016-04-05
CN107093449A (zh) 2017-08-25
ES2487627T3 (es) 2014-08-22

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