CN102388454B - 磁性隧道结(mtj)和方法，以及使用其的磁性随机存取存储器(mram) - Google Patents

磁性隧道结(mtj)和方法，以及使用其的磁性随机存取存储器(mram) Download PDF

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Publication number
CN102388454B
CN102388454B CN201080016318.9A CN201080016318A CN102388454B CN 102388454 B CN102388454 B CN 102388454B CN 201080016318 A CN201080016318 A CN 201080016318A CN 102388454 B CN102388454 B CN 102388454B
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layer
mtj
electrode
free layer
free
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Chinese (zh)
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CN102388454A (zh
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朱晓春
马修·诺瓦克
李霞
升·H·康
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Qualcomm Inc
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Qualcomm Inc
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3254—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the spacer being semiconducting or insulating, e.g. for spin tunnel junction [STJ]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
    • H01F10/3272—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn by use of anti-parallel coupled [APC] ferromagnetic layers, e.g. artificial ferrimagnets [AFI], artificial [AAF] or synthetic [SAF] anti-ferromagnets
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
CN201080016318.9A 2009-04-14 2010-04-14 磁性隧道结(mtj)和方法，以及使用其的磁性随机存取存储器(mram) Active CN102388454B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610957985.6A CN107093449B (zh) 2009-04-14 2010-04-14 磁性隧道结(mtj)和方法，以及使用其的磁性随机存取存储器(mram)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US12/423,298 2009-04-14
US12/423,298 US8344433B2 (en) 2009-04-14 2009-04-14 Magnetic tunnel junction (MTJ) and methods, and magnetic random access memory (MRAM) employing same
PCT/US2010/031080 WO2010120918A2 (en) 2009-04-14 2010-04-14 Magnetic tunnel junction (mtj) and methods, and magnetic random access memory (mram) employing same

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CN102388454A CN102388454A (zh) 2012-03-21
CN102388454B true CN102388454B (zh) 2016-11-02

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CN201610957985.6A Active CN107093449B (zh) 2009-04-14 2010-04-14 磁性隧道结(mtj)和方法，以及使用其的磁性随机存取存储器(mram)

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US (2) US8344433B2 (enExample)
EP (1) EP2419933B1 (enExample)
JP (3) JP5584754B2 (enExample)
KR (1) KR101390940B1 (enExample)
CN (2) CN102388454B (enExample)
BR (1) BRPI1013772B1 (enExample)
ES (1) ES2487627T3 (enExample)
TW (1) TWI474472B (enExample)
WO (1) WO2010120918A2 (enExample)

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US8982613B2 (en) * 2013-06-17 2015-03-17 New York University Scalable orthogonal spin transfer magnetic random access memory devices with reduced write error rates
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KR20150095187A (ko) * 2014-02-11 2015-08-20 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조
US10158065B2 (en) 2014-07-07 2018-12-18 Intel Corporation Spin-transfer torque memory (STTM) devices having magnetic contacts
US10026888B2 (en) * 2014-08-06 2018-07-17 Toshiba Memory Corporation Magnetoresistive effect element and magnetic memory
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KR101705962B1 (ko) * 2015-01-19 2017-02-14 한양대학교 산학협력단 수직자기이방성을 갖는 mtj 구조 및 이를 포함하는 자성소자
US9583170B2 (en) 2015-02-12 2017-02-28 Qualcomm Incorporated Adjusting resistive memory write driver strength based on a mimic resistive memory write operation
US9813049B2 (en) 2015-08-12 2017-11-07 Qualcomm Incorporated Comparator including a magnetic tunnel junction (MTJ) device and a transistor
US9666792B2 (en) 2015-08-12 2017-05-30 Qualcomm Incorporated Shadow-effect compensated fabrication of magnetic tunnel junction (MTJ) elements
CN106229004B (zh) * 2016-07-11 2018-08-28 北京航空航天大学 一种光写入的非易失性磁存储器
US9853205B1 (en) * 2016-10-01 2017-12-26 International Business Machines Corporation Spin transfer torque magnetic tunnel junction with off-centered current flow
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US9985199B1 (en) * 2017-03-15 2018-05-29 International Business Machines Corporation Prevention of switching of spins in magnetic tunnel junctions by on-chip parasitic magnetic shield
JP7023637B2 (ja) * 2017-08-08 2022-02-22 株式会社日立ハイテク 磁気トンネル接合素子の製造方法
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US10732933B2 (en) 2018-05-10 2020-08-04 Sandisk Technologies Llc Generating random bitstreams with magnetic tunnel junctions
CN113809117B (zh) * 2020-06-16 2023-12-22 联华电子股份有限公司 半导体元件及其制作方法
CN115497977B (zh) * 2022-09-19 2025-10-03 长江存储科技有限责任公司 半导体结构及其制备方法、三维存储器、存储系统
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Also Published As

Publication number Publication date
CN102388454A (zh) 2012-03-21
WO2010120918A2 (en) 2010-10-21
EP2419933A2 (en) 2012-02-22
JP5584754B2 (ja) 2014-09-03
US8889431B2 (en) 2014-11-18
US20100258887A1 (en) 2010-10-14
TWI474472B (zh) 2015-02-21
CN107093449B (zh) 2021-04-09
US8344433B2 (en) 2013-01-01
JP2015109480A (ja) 2015-06-11
BRPI1013772A2 (pt) 2016-04-05
US20130134533A1 (en) 2013-05-30
CN107093449A (zh) 2017-08-25
JP5710821B2 (ja) 2015-04-30
WO2010120918A3 (en) 2011-01-20
TW201106468A (en) 2011-02-16
KR101390940B1 (ko) 2014-05-02
EP2419933B1 (en) 2014-06-18
JP2014146840A (ja) 2014-08-14
JP2012524415A (ja) 2012-10-11
JP6196250B2 (ja) 2017-09-13
KR20120006056A (ko) 2012-01-17
EP2419933A4 (en) 2013-04-03
ES2487627T3 (es) 2014-08-22
BRPI1013772B1 (pt) 2019-10-29

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