JP2015520949A5 - - Google Patents
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- Publication number
- JP2015520949A5 JP2015520949A5 JP2015511714A JP2015511714A JP2015520949A5 JP 2015520949 A5 JP2015520949 A5 JP 2015520949A5 JP 2015511714 A JP2015511714 A JP 2015511714A JP 2015511714 A JP2015511714 A JP 2015511714A JP 2015520949 A5 JP2015520949 A5 JP 2015520949A5
- Authority
- JP
- Japan
- Prior art keywords
- spin
- layer
- ferromagnetic
- transistor
- ferromagnetic layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005294 ferromagnetic effect Effects 0.000 claims 25
- 230000005291 magnetic effect Effects 0.000 claims 10
- 238000009413 insulation Methods 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 230000010287 polarization Effects 0.000 claims 4
- 239000003302 ferromagnetic material Substances 0.000 claims 3
- 239000004065 semiconductor Substances 0.000 claims 3
- 230000004888 barrier function Effects 0.000 claims 2
- 230000001413 cellular effect Effects 0.000 claims 2
- 230000001939 inductive effect Effects 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201261644592P | 2012-05-09 | 2012-05-09 | |
| US61/644,592 | 2012-05-09 | ||
| US13/746,011 US9076953B2 (en) | 2012-05-09 | 2013-01-21 | Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods |
| US13/746,011 | 2013-01-21 | ||
| PCT/US2013/040406 WO2013170070A2 (en) | 2012-05-09 | 2013-05-09 | Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2015520949A JP2015520949A (ja) | 2015-07-23 |
| JP2015520949A5 true JP2015520949A5 (enExample) | 2015-10-01 |
| JP5902349B2 JP5902349B2 (ja) | 2016-04-13 |
Family
ID=49547976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2015511714A Active JP5902349B2 (ja) | 2012-05-09 | 2013-05-09 | 圧電層と関連するメモリ、メモリシステム、および方法を用いるスピントランジスタ |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9076953B2 (enExample) |
| EP (1) | EP2847806B1 (enExample) |
| JP (1) | JP5902349B2 (enExample) |
| KR (1) | KR101613199B1 (enExample) |
| CN (1) | CN104303326B (enExample) |
| WO (1) | WO2013170070A2 (enExample) |
Families Citing this family (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20130017267A (ko) * | 2011-08-10 | 2013-02-20 | 에스케이하이닉스 주식회사 | 반도체 장치 및 그 제조 방법 |
| WO2015137256A1 (ja) * | 2014-03-14 | 2015-09-17 | 独立行政法人科学技術振興機構 | ピエゾ抵抗体をチャネルに用いたトランジスタおよび電子回路 |
| US10263036B2 (en) * | 2014-09-25 | 2019-04-16 | Intel Corporation | Strain assisted spin torque switching spin transfer torque memory |
| JP6824504B2 (ja) | 2015-03-06 | 2021-02-03 | 株式会社ＢｌｕｅＳｐｉｎ | 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置 |
| JP2016194964A (ja) | 2015-04-01 | 2016-11-17 | 株式会社ＢｌｕｅＳｐｉｎ | 磁気メモリ及びその動作方法 |
| CN113694075A (zh) * | 2015-06-10 | 2021-11-26 | 得克萨斯州大学系统董事会 | 用于医治疾病的外泌体的用途 |
| US9825218B2 (en) | 2015-10-13 | 2017-11-21 | Board Of Regents, The University Of Texas System | Transistor that employs collective magnetic effects thereby providing improved energy efficiency |
| CN109690675B (zh) * | 2016-06-28 | 2022-11-04 | 赢世通股份有限公司 | 一种可应用于磁电隧道结的新型字线脉冲写入方法 |
| GB2560936A (en) * | 2017-03-29 | 2018-10-03 | Univ Warwick | Spin electronic device |
| CN108344956B (zh) * | 2018-01-23 | 2020-06-12 | 湖北工业大学 | 基于自激励单电子自旋电磁晶体管的应用电路 |
| CN109449284B (zh) * | 2018-09-17 | 2019-06-28 | 北京应用物理与计算数学研究所 | 一种基于挠曲机制的三碘化铬电流自旋控制器 |
| CN109346599A (zh) * | 2018-09-26 | 2019-02-15 | 中国科学技术大学 | 多铁隧道结忆阻器及其制作方法 |
| US12080783B2 (en) * | 2020-03-05 | 2024-09-03 | Wisconsin Alumni Research Foundation | Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets |
| CN113611795B (zh) * | 2021-06-15 | 2023-09-26 | 北京航空航天大学 | 垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法 |
| US20250126851A1 (en) * | 2022-07-05 | 2025-04-17 | The Penn State Research Foundation | An ultra-steep slope and high-performance strain effect transistor |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6829157B2 (en) | 2001-12-05 | 2004-12-07 | Korea Institute Of Science And Technology | Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory |
| US7282755B2 (en) | 2003-11-14 | 2007-10-16 | Grandis, Inc. | Stress assisted current driven switching for magnetic memory applications |
| KR100754930B1 (ko) | 2004-12-22 | 2007-09-03 | 한국과학기술원 | 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법 |
| JP2006237304A (ja) * | 2005-02-25 | 2006-09-07 | Osaka Industrial Promotion Organization | 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ |
| JP4574674B2 (ja) * | 2005-03-24 | 2010-11-04 | 独立行政法人科学技術振興機構 | 論理回路および単電子スピントランジスタ |
| JP4528660B2 (ja) * | 2005-03-31 | 2010-08-18 | 株式会社東芝 | スピン注入ｆｅｔ |
| JP4455558B2 (ja) * | 2006-09-08 | 2010-04-21 | 株式会社東芝 | スピンｍｏｓｆｅｔ |
| JP4996390B2 (ja) * | 2007-08-28 | 2012-08-08 | 株式会社東芝 | スピンｆｅｔ及び磁気抵抗効果素子 |
| US7791152B2 (en) * | 2008-05-12 | 2010-09-07 | International Business Machines Corporation | Magnetic tunnel junction transistor |
| US8054677B2 (en) * | 2008-08-07 | 2011-11-08 | Seagate Technology Llc | Magnetic memory with strain-assisted exchange coupling switch |
| US8310861B2 (en) | 2008-09-30 | 2012-11-13 | Micron Technology, Inc. | STT-MRAM cell structure incorporating piezoelectric stress material |
-
2013
- 2013-01-21 US US13/746,011 patent/US9076953B2/en active Active
- 2013-05-09 JP JP2015511714A patent/JP5902349B2/ja active Active
- 2013-05-09 CN CN201380024185.3A patent/CN104303326B/zh active Active
- 2013-05-09 KR KR1020147034325A patent/KR101613199B1/ko active Active
- 2013-05-09 EP EP13724128.7A patent/EP2847806B1/en not_active Not-in-force
- 2013-05-09 WO PCT/US2013/040406 patent/WO2013170070A2/en not_active Ceased
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