JP2017520910A5 - - Google Patents

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Publication number
JP2017520910A5
JP2017520910A5 JP2016567094A JP2016567094A JP2017520910A5 JP 2017520910 A5 JP2017520910 A5 JP 2017520910A5 JP 2016567094 A JP2016567094 A JP 2016567094A JP 2016567094 A JP2016567094 A JP 2016567094A JP 2017520910 A5 JP2017520910 A5 JP 2017520910A5
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JP
Japan
Prior art keywords
transistor
metal portion
word line
gate
biasing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2016567094A
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English (en)
Japanese (ja)
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JP2017520910A (ja
Filing date
Publication date
Priority claimed from US14/280,213 external-priority patent/US9461055B2/en
Application filed filed Critical
Publication of JP2017520910A publication Critical patent/JP2017520910A/ja
Publication of JP2017520910A5 publication Critical patent/JP2017520910A5/ja
Pending legal-status Critical Current

Links

JP2016567094A 2014-05-16 2015-05-14 先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ Pending JP2017520910A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/280,213 2014-05-16
US14/280,213 US9461055B2 (en) 2014-05-16 2014-05-16 Advanced metal-nitride-oxide-silicon multiple-time programmable memory
PCT/US2015/030891 WO2015175834A1 (en) 2014-05-16 2015-05-14 Advanced metal-nitride-oxide-silicon multiple-time programmable memory

Publications (2)

Publication Number Publication Date
JP2017520910A JP2017520910A (ja) 2017-07-27
JP2017520910A5 true JP2017520910A5 (enExample) 2018-06-07

Family

ID=53276294

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016567094A Pending JP2017520910A (ja) 2014-05-16 2015-05-14 先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ

Country Status (5)

Country Link
US (1) US9461055B2 (enExample)
EP (1) EP3143639A1 (enExample)
JP (1) JP2017520910A (enExample)
CN (1) CN106256022B (enExample)
WO (1) WO2015175834A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150214331A1 (en) * 2014-01-30 2015-07-30 Globalfoundries Inc. Replacement metal gate including dielectric gate material
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
CN105702737B (zh) 2016-02-05 2019-01-18 中国科学院微电子研究所 连接有负电容的多栅FinFET及其制造方法及电子设备
US9953977B1 (en) 2017-04-13 2018-04-24 International Business Machines Corporation FinFET semiconductor device
US10903217B2 (en) * 2019-01-18 2021-01-26 Globalfoundries Singapore Pte. Ltd. Anti-fuse memory cell and a method for forming the anti-fuse memory cell
US11404537B2 (en) 2020-04-17 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with air-void in spacer
CN117320452B (zh) * 2023-11-29 2024-04-05 合肥晶合集成电路股份有限公司 多次可编程器件及其制备方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
CN1291491C (zh) * 2002-11-12 2006-12-20 旺宏电子股份有限公司 半导体元件及其制作方法
KR100843244B1 (ko) 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20050093057A1 (en) * 2003-11-03 2005-05-05 Fu-Chia Shone Common spacer dual gate memory cell and method for forming a nonvolatile memory array
DE102004031385B4 (de) 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
JP2006060030A (ja) * 2004-08-20 2006-03-02 Renesas Technology Corp 半導体記憶装置
US8026553B2 (en) 2007-05-10 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
JP2011040458A (ja) 2009-08-07 2011-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
JP5486884B2 (ja) 2009-09-10 2014-05-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置、及びその製造方法
JP5538024B2 (ja) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8466027B2 (en) 2011-09-08 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide formation and associated devices
JP2014049460A (ja) 2012-08-29 2014-03-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory

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