JP2017520910A - 先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ - Google Patents

先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ Download PDF

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JP2017520910A
JP2017520910A JP2016567094A JP2016567094A JP2017520910A JP 2017520910 A JP2017520910 A JP 2017520910A JP 2016567094 A JP2016567094 A JP 2016567094A JP 2016567094 A JP2016567094 A JP 2016567094A JP 2017520910 A JP2017520910 A JP 2017520910A
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mnos
gate
mtp
fet
transistor
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Japanese (ja)
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JP2017520910A5 (enExample
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シア・リ
ジョンゼ・ワン
ダニエル・ウェイン・ペリー
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クアルコム，インコーポレイテッド
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
JP2016567094A 2014-05-16 2015-05-14 先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ Pending JP2017520910A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/280,213 2014-05-16
US14/280,213 US9461055B2 (en) 2014-05-16 2014-05-16 Advanced metal-nitride-oxide-silicon multiple-time programmable memory
PCT/US2015/030891 WO2015175834A1 (en) 2014-05-16 2015-05-14 Advanced metal-nitride-oxide-silicon multiple-time programmable memory

Publications (2)

Publication Number Publication Date
JP2017520910A true JP2017520910A (ja) 2017-07-27
JP2017520910A5 JP2017520910A5 (enExample) 2018-06-07

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Family Applications (1)

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JP2016567094A Pending JP2017520910A (ja) 2014-05-16 2015-05-14 先進的金属−窒化物−酸化物−シリコン複数回プログラム可能メモリ

Country Status (5)

Country Link
US (1) US9461055B2 (enExample)
EP (1) EP3143639A1 (enExample)
JP (1) JP2017520910A (enExample)
CN (1) CN106256022B (enExample)
WO (1) WO2015175834A1 (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129562A (ko) * 2020-04-17 2021-10-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 스페이서 내에 에어 보이드를 갖는 반도체 디바이스

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* Cited by examiner, † Cited by third party
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US20150214331A1 (en) * 2014-01-30 2015-07-30 Globalfoundries Inc. Replacement metal gate including dielectric gate material
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
CN105702737B (zh) 2016-02-05 2019-01-18 中国科学院微电子研究所 连接有负电容的多栅FinFET及其制造方法及电子设备
US9953977B1 (en) 2017-04-13 2018-04-24 International Business Machines Corporation FinFET semiconductor device
US10903217B2 (en) * 2019-01-18 2021-01-26 Globalfoundries Singapore Pte. Ltd. Anti-fuse memory cell and a method for forming the anti-fuse memory cell
CN117320452B (zh) * 2023-11-29 2024-04-05 合肥晶合集成电路股份有限公司 多次可编程器件及其制备方法

Citations (3)

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JP2002164446A (ja) * 2000-09-12 2002-06-07 Sony Corp 不揮発性半導体記憶装置、動作方法および製造方法
JP2011060997A (ja) * 2009-09-10 2011-03-24 Renesas Electronics Corp 不揮発性半導体記憶装置、及びその製造方法
JP2014049460A (ja) * 2012-08-29 2014-03-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法

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CN1291491C (zh) * 2002-11-12 2006-12-20 旺宏电子股份有限公司 半导体元件及其制作方法
KR100843244B1 (ko) 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20050093057A1 (en) * 2003-11-03 2005-05-05 Fu-Chia Shone Common spacer dual gate memory cell and method for forming a nonvolatile memory array
DE102004031385B4 (de) 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
JP2006060030A (ja) * 2004-08-20 2006-03-02 Renesas Technology Corp 半導体記憶装置
US8026553B2 (en) 2007-05-10 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
JP2011040458A (ja) 2009-08-07 2011-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
JP5538024B2 (ja) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8466027B2 (en) 2011-09-08 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide formation and associated devices
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory

Patent Citations (3)

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Publication number Priority date Publication date Assignee Title
JP2002164446A (ja) * 2000-09-12 2002-06-07 Sony Corp 不揮発性半導体記憶装置、動作方法および製造方法
JP2011060997A (ja) * 2009-09-10 2011-03-24 Renesas Electronics Corp 不揮発性半導体記憶装置、及びその製造方法
JP2014049460A (ja) * 2012-08-29 2014-03-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20210129562A (ko) * 2020-04-17 2021-10-28 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 스페이서 내에 에어 보이드를 갖는 반도체 디바이스
US11404537B2 (en) 2020-04-17 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with air-void in spacer
KR102453508B1 (ko) * 2020-04-17 2022-10-11 타이완 세미콘덕터 매뉴팩쳐링 컴퍼니 리미티드 스페이서 내에 에어 보이드를 갖는 반도체 디바이스
US12027581B2 (en) 2020-04-17 2024-07-02 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device with air-void in spacer

Also Published As

Publication number Publication date
CN106256022B (zh) 2019-10-18
CN106256022A (zh) 2016-12-21
EP3143639A1 (en) 2017-03-22
WO2015175834A1 (en) 2015-11-19
US9461055B2 (en) 2016-10-04
US20150333072A1 (en) 2015-11-19

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