CN106256022B - 高级金属-氮化物-氧化物-硅多次可编程存储器 - Google Patents

高级金属-氮化物-氧化物-硅多次可编程存储器 Download PDF

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Publication number
CN106256022B
CN106256022B CN201580022698.XA CN201580022698A CN106256022B CN 106256022 B CN106256022 B CN 106256022B CN 201580022698 A CN201580022698 A CN 201580022698A CN 106256022 B CN106256022 B CN 106256022B
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China
Prior art keywords
transistor
metal
fet
gate
mnos
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Expired - Fee Related
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CN201580022698.XA
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English (en)
Chinese (zh)
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CN106256022A (zh
Inventor
X·李
Z·王
D·W·佩里
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/0413—Manufacture or treatment of FETs having insulated gates [IGFET] of FETs having charge-trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/691—IGFETs having charge trapping gate insulators, e.g. MNOS transistors having more than two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/696—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having at least one additional gate, e.g. program gate, erase gate or select gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H10D30/694—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/697—IGFETs having charge trapping gate insulators, e.g. MNOS transistors characterised by the shapes, relative sizes or dispositions of the gate electrodes having trapping at multiple separated sites, e.g. multi-particles trapping sites
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/031—Manufacture or treatment of data-storage electrodes
    • H10D64/037—Manufacture or treatment of data-storage electrodes comprising charge-trapping insulators

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Semiconductor Memories (AREA)
CN201580022698.XA 2014-05-16 2015-05-14 高级金属-氮化物-氧化物-硅多次可编程存储器 Expired - Fee Related CN106256022B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/280,213 US9461055B2 (en) 2014-05-16 2014-05-16 Advanced metal-nitride-oxide-silicon multiple-time programmable memory
US14/280,213 2014-05-16
PCT/US2015/030891 WO2015175834A1 (en) 2014-05-16 2015-05-14 Advanced metal-nitride-oxide-silicon multiple-time programmable memory

Publications (2)

Publication Number Publication Date
CN106256022A CN106256022A (zh) 2016-12-21
CN106256022B true CN106256022B (zh) 2019-10-18

Family

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Family Applications (1)

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CN201580022698.XA Expired - Fee Related CN106256022B (zh) 2014-05-16 2015-05-14 高级金属-氮化物-氧化物-硅多次可编程存储器

Country Status (5)

Country Link
US (1) US9461055B2 (enExample)
EP (1) EP3143639A1 (enExample)
JP (1) JP2017520910A (enExample)
CN (1) CN106256022B (enExample)
WO (1) WO2015175834A1 (enExample)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20150214331A1 (en) * 2014-01-30 2015-07-30 Globalfoundries Inc. Replacement metal gate including dielectric gate material
US9461055B2 (en) * 2014-05-16 2016-10-04 Qualcomm Incorporated Advanced metal-nitride-oxide-silicon multiple-time programmable memory
JP5982055B1 (ja) * 2015-12-18 2016-08-31 株式会社フローディア メモリセル、不揮発性半導体記憶装置、および不揮発性半導体記憶装置の製造方法
CN105702737B (zh) * 2016-02-05 2019-01-18 中国科学院微电子研究所 连接有负电容的多栅FinFET及其制造方法及电子设备
US9953977B1 (en) 2017-04-13 2018-04-24 International Business Machines Corporation FinFET semiconductor device
US10903217B2 (en) * 2019-01-18 2021-01-26 Globalfoundries Singapore Pte. Ltd. Anti-fuse memory cell and a method for forming the anti-fuse memory cell
US11404537B2 (en) 2020-04-17 2022-08-02 Taiwan Semiconductor Manufacturing Company Limited Semiconductor device with air-void in spacer
CN117320452B (zh) * 2023-11-29 2024-04-05 合肥晶合集成电路股份有限公司 多次可编程器件及其制备方法

Citations (3)

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CN1501491A (zh) * 2002-11-12 2004-06-02 旺宏电子股份有限公司 多晶硅自行对准接触插塞与多晶硅共享源极线及制作方法
JP2014049460A (ja) * 2012-08-29 2014-03-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
CN106256022A (zh) * 2014-05-16 2016-12-21 高通股份有限公司 高级金属‑氮化物‑氧化物‑硅多次可编程存储器

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JP4923321B2 (ja) * 2000-09-12 2012-04-25 ソニー株式会社 不揮発性半導体記憶装置の動作方法
KR100843244B1 (ko) 2007-04-19 2008-07-02 삼성전자주식회사 반도체 소자 및 그 제조 방법
US20050093057A1 (en) * 2003-11-03 2005-05-05 Fu-Chia Shone Common spacer dual gate memory cell and method for forming a nonvolatile memory array
DE102004031385B4 (de) 2004-06-29 2010-12-09 Qimonda Ag Verfahren zur Herstellung von Stegfeldeffekttransistoren in einer DRAM-Speicherzellenanordnung, Feldeffekttransistoren mit gekrümmtem Kanal und DRAM-Speicherzellenanordnung
JP2006060030A (ja) * 2004-08-20 2006-03-02 Renesas Technology Corp 半導体記憶装置
US8026553B2 (en) 2007-05-10 2011-09-27 Kabushiki Kaisha Toshiba Semiconductor memory device and manufacturing method thereof
JP2011040458A (ja) 2009-08-07 2011-02-24 Renesas Electronics Corp 半導体装置およびその製造方法
JP5486884B2 (ja) 2009-09-10 2014-05-07 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置、及びその製造方法
JP5538024B2 (ja) * 2010-03-29 2014-07-02 ルネサスエレクトロニクス株式会社 不揮発性半導体記憶装置
US8466027B2 (en) 2011-09-08 2013-06-18 Taiwan Semiconductor Manufacturing Company, Ltd. Silicide formation and associated devices

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1501491A (zh) * 2002-11-12 2004-06-02 旺宏电子股份有限公司 多晶硅自行对准接触插塞与多晶硅共享源极线及制作方法
JP2014049460A (ja) * 2012-08-29 2014-03-17 Renesas Electronics Corp 不揮発性半導体記憶装置及びその製造方法
CN106256022A (zh) * 2014-05-16 2016-12-21 高通股份有限公司 高级金属‑氮化物‑氧化物‑硅多次可编程存储器

Also Published As

Publication number Publication date
EP3143639A1 (en) 2017-03-22
WO2015175834A1 (en) 2015-11-19
JP2017520910A (ja) 2017-07-27
US9461055B2 (en) 2016-10-04
CN106256022A (zh) 2016-12-21
US20150333072A1 (en) 2015-11-19

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