KR101613199B1 - 압전 층을 이용하는 스핀 트랜지스터들 및 관련된 메모리, 메모리 시스템들, 및 이들을 제조하는 방법들 - Google Patents

압전 층을 이용하는 스핀 트랜지스터들 및 관련된 메모리, 메모리 시스템들, 및 이들을 제조하는 방법들 Download PDF

Info

Publication number
KR101613199B1
KR101613199B1 KR1020147034325A KR20147034325A KR101613199B1 KR 101613199 B1 KR101613199 B1 KR 101613199B1 KR 1020147034325 A KR1020147034325 A KR 1020147034325A KR 20147034325 A KR20147034325 A KR 20147034325A KR 101613199 B1 KR101613199 B1 KR 101613199B1
Authority
KR
South Korea
Prior art keywords
spin
layer
ferromagnetic
ferromagnetic layer
mtj
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
KR1020147034325A
Other languages
English (en)
Korean (ko)
Other versions
KR20150002898A (ko
Inventor
양 두
Original Assignee
퀄컴 인코포레이티드
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 퀄컴 인코포레이티드 filed Critical 퀄컴 인코포레이티드
Publication of KR20150002898A publication Critical patent/KR20150002898A/ko
Application granted granted Critical
Publication of KR101613199B1 publication Critical patent/KR101613199B1/ko
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
KR1020147034325A 2012-05-09 2013-05-09 압전 층을 이용하는 스핀 트랜지스터들 및 관련된 메모리, 메모리 시스템들, 및 이들을 제조하는 방법들 Active KR101613199B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644592P 2012-05-09 2012-05-09
US61/644,592 2012-05-09
US13/746,011 2013-01-21
US13/746,011 US9076953B2 (en) 2012-05-09 2013-01-21 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
PCT/US2013/040406 WO2013170070A2 (en) 2012-05-09 2013-05-09 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods

Publications (2)

Publication Number Publication Date
KR20150002898A KR20150002898A (ko) 2015-01-07
KR101613199B1 true KR101613199B1 (ko) 2016-04-18

Family

ID=49547976

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020147034325A Active KR101613199B1 (ko) 2012-05-09 2013-05-09 압전 층을 이용하는 스핀 트랜지스터들 및 관련된 메모리, 메모리 시스템들, 및 이들을 제조하는 방법들

Country Status (6)

Country Link
US (1) US9076953B2 (enExample)
EP (1) EP2847806B1 (enExample)
JP (1) JP5902349B2 (enExample)
KR (1) KR101613199B1 (enExample)
CN (1) CN104303326B (enExample)
WO (1) WO2013170070A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130017267A (ko) * 2011-08-10 2013-02-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN106104831B (zh) * 2014-03-14 2019-04-05 国立研究开发法人科学技术振兴机构 对于沟道采用了压电电阻体的晶体管以及电子电路
CN106688041B (zh) * 2014-09-25 2020-12-08 英特尔公司 应变辅助自旋力矩翻转自旋转移力矩存储器
JP6824504B2 (ja) 2015-03-06 2021-02-03 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置
JP2016194964A (ja) 2015-04-01 2016-11-17 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ及びその動作方法
CA2988585A1 (en) * 2015-06-10 2016-12-15 Raghu Kalluri Use of exosomes for the treatment of disease
US9825218B2 (en) 2015-10-13 2017-11-21 Board Of Regents, The University Of Texas System Transistor that employs collective magnetic effects thereby providing improved energy efficiency
CN109690675B (zh) * 2016-06-28 2022-11-04 赢世通股份有限公司 一种可应用于磁电隧道结的新型字线脉冲写入方法
GB2560936A (en) * 2017-03-29 2018-10-03 Univ Warwick Spin electronic device
CN108344956B (zh) * 2018-01-23 2020-06-12 湖北工业大学 基于自激励单电子自旋电磁晶体管的应用电路
CN109449284B (zh) * 2018-09-17 2019-06-28 北京应用物理与计算数学研究所 一种基于挠曲机制的三碘化铬电流自旋控制器
CN109346599A (zh) * 2018-09-26 2019-02-15 中国科学技术大学 多铁隧道结忆阻器及其制作方法
US12080783B2 (en) * 2020-03-05 2024-09-03 Wisconsin Alumni Research Foundation Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets
CN113611795B (zh) * 2021-06-15 2023-09-26 北京航空航天大学 垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法
US20250126851A1 (en) * 2022-07-05 2025-04-17 The Penn State Research Foundation An ultra-steep slope and high-performance strain effect transistor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006100835A1 (ja) 2005-03-24 2006-09-28 Japan Science And Technology Agency 論理回路および単電子スピントランジスタ
US20090279353A1 (en) 2008-05-12 2009-11-12 Worledge Daniel C Magnetic tunnel junction transistor
US20100032738A1 (en) 2008-08-07 2010-02-11 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829157B2 (en) 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US7282755B2 (en) 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
KR100754930B1 (ko) 2004-12-22 2007-09-03 한국과학기술원 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법
JP2006237304A (ja) * 2005-02-25 2006-09-07 Osaka Industrial Promotion Organization 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ
JP4528660B2 (ja) * 2005-03-31 2010-08-18 株式会社東芝 スピン注入ｆｅｔ
JP4455558B2 (ja) * 2006-09-08 2010-04-21 株式会社東芝 スピンｍｏｓｆｅｔ
JP4996390B2 (ja) * 2007-08-28 2012-08-08 株式会社東芝 スピンｆｅｔ及び磁気抵抗効果素子
US8310861B2 (en) 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006100835A1 (ja) 2005-03-24 2006-09-28 Japan Science And Technology Agency 論理回路および単電子スピントランジスタ
US20090279353A1 (en) 2008-05-12 2009-11-12 Worledge Daniel C Magnetic tunnel junction transistor
US20100032738A1 (en) 2008-08-07 2010-02-11 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch

Also Published As

Publication number Publication date
EP2847806B1 (en) 2017-01-18
JP5902349B2 (ja) 2016-04-13
KR20150002898A (ko) 2015-01-07
WO2013170070A3 (en) 2014-02-27
CN104303326B (zh) 2016-10-19
EP2847806A2 (en) 2015-03-18
JP2015520949A (ja) 2015-07-23
CN104303326A (zh) 2015-01-21
US9076953B2 (en) 2015-07-07
WO2013170070A2 (en) 2013-11-14
US20130299880A1 (en) 2013-11-14

Similar Documents

Publication Publication Date Title
KR101613199B1 (ko) 압전 층을 이용하는 스핀 트랜지스터들 및 관련된 메모리, 메모리 시스템들, 및 이들을 제조하는 방법들
US9312474B2 (en) Electronic devices having semiconductor memory units having magnetic tunnel junction element
CN104813470B (zh) 电场增强型自旋转移扭矩存储器(sttm)器件
US10134808B2 (en) Magnetic tunnel junction (MTJ) devices with heterogeneous free layer structure, particularly suited for spin-torque-transfer (STT) magnetic random access memory (MRAM) (STT MRAM)
US11600659B2 (en) Cross-point magnetic random access memory with piezoelectric selector
KR102076086B1 (ko) 고안정성 스핀트로닉 메모리
WO2016048317A1 (en) Strain assisted spin torque switching spin transfer torque memory
WO2019125684A1 (en) Physically unclonable function implemented with spin orbit coupling based magnetic memory
US20170352802A1 (en) Magneto-electric devices and interconnect
US10403811B2 (en) Magnetic diffusion barriers and filter in PSTTM MTJ construction
US20170077387A1 (en) Magnetic tunnel junction (mtj) devices particularly suited for efficient spin-torque-transfer (stt) magnetic random access memory (mram) (stt mram)
CN107667438B (zh) 具有减小的开关电流的垂直磁性存储器
WO2019066881A1 (en) CRITICAL CURRENT CURRENT SPIN TRANSFER TORQUE MEMORY DEVICES (STTM) AND COMPUTER DEVICE COMPRISING THE SAME
WO2017034564A1 (en) Single pulse magneto-strictive switching via hybrid magnetization stack
US10079337B2 (en) Double magnetic tunnel junction with dynamic reference layer
WO2019125387A1 (en) Spin orbit coupling based memory with extended free magnet structure
WO2018236366A1 (en) Colossal magnetoresistance for magnetic read out

Legal Events

Date Code Title Description
PA0105 International application

Patent event date: 20141205

Patent event code: PA01051R01D

Comment text: International Patent Application

PG1501 Laying open of application
A201 Request for examination
A302 Request for accelerated examination
PA0201 Request for examination

Patent event code: PA02012R01D

Patent event date: 20150805

Comment text: Request for Examination of Application

PA0302 Request for accelerated examination

Patent event date: 20150805

Patent event code: PA03022R01D

Comment text: Request for Accelerated Examination

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

Comment text: Notification of reason for refusal

Patent event date: 20151203

Patent event code: PE09021S01D

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

Patent event code: PE07011S01D

Comment text: Decision to Grant Registration

Patent event date: 20160406

GRNT Written decision to grant
PR0701 Registration of establishment

Comment text: Registration of Establishment

Patent event date: 20160411

Patent event code: PR07011E01D

PR1002 Payment of registration fee

Payment date: 20160412

End annual number: 3

Start annual number: 1

PG1601 Publication of registration
FPAY Annual fee payment

Payment date: 20190327

Year of fee payment: 4

PR1001 Payment of annual fee

Payment date: 20190327

Start annual number: 4

End annual number: 4

PR1001 Payment of annual fee

Payment date: 20200324

Start annual number: 5

End annual number: 5

PR1001 Payment of annual fee

Payment date: 20210329

Start annual number: 6

End annual number: 6

PR1001 Payment of annual fee

Payment date: 20230327

Start annual number: 8

End annual number: 8

PR1001 Payment of annual fee

Payment date: 20240320

Start annual number: 9

End annual number: 9