CN104303326B - 采用压电层的自旋晶体管以及相关存储器、存储器系统和方法 - Google Patents

采用压电层的自旋晶体管以及相关存储器、存储器系统和方法 Download PDF

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Publication number
CN104303326B
CN104303326B CN201380024185.3A CN201380024185A CN104303326B CN 104303326 B CN104303326 B CN 104303326B CN 201380024185 A CN201380024185 A CN 201380024185A CN 104303326 B CN104303326 B CN 104303326B
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spin
layer
mtj
ferromagnetic
transistor
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CN104303326A (zh
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Y·杜
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
CN201380024185.3A 2012-05-09 2013-05-09 采用压电层的自旋晶体管以及相关存储器、存储器系统和方法 Active CN104303326B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644592P 2012-05-09 2012-05-09
US61/644,592 2012-05-09
US13/746,011 2013-01-21
US13/746,011 US9076953B2 (en) 2012-05-09 2013-01-21 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
PCT/US2013/040406 WO2013170070A2 (en) 2012-05-09 2013-05-09 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods

Publications (2)

Publication Number Publication Date
CN104303326A CN104303326A (zh) 2015-01-21
CN104303326B true CN104303326B (zh) 2016-10-19

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CN201380024185.3A Active CN104303326B (zh) 2012-05-09 2013-05-09 采用压电层的自旋晶体管以及相关存储器、存储器系统和方法

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Country Link
US (1) US9076953B2 (enExample)
EP (1) EP2847806B1 (enExample)
JP (1) JP5902349B2 (enExample)
KR (1) KR101613199B1 (enExample)
CN (1) CN104303326B (enExample)
WO (1) WO2013170070A2 (enExample)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130017267A (ko) * 2011-08-10 2013-02-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
CN106104831B (zh) * 2014-03-14 2019-04-05 国立研究开发法人科学技术振兴机构 对于沟道采用了压电电阻体的晶体管以及电子电路
CN106688041B (zh) * 2014-09-25 2020-12-08 英特尔公司 应变辅助自旋力矩翻转自旋转移力矩存储器
JP6824504B2 (ja) 2015-03-06 2021-02-03 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置
JP2016194964A (ja) 2015-04-01 2016-11-17 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ及びその動作方法
CA2988585A1 (en) * 2015-06-10 2016-12-15 Raghu Kalluri Use of exosomes for the treatment of disease
US9825218B2 (en) 2015-10-13 2017-11-21 Board Of Regents, The University Of Texas System Transistor that employs collective magnetic effects thereby providing improved energy efficiency
CN109690675B (zh) * 2016-06-28 2022-11-04 赢世通股份有限公司 一种可应用于磁电隧道结的新型字线脉冲写入方法
GB2560936A (en) * 2017-03-29 2018-10-03 Univ Warwick Spin electronic device
CN108344956B (zh) * 2018-01-23 2020-06-12 湖北工业大学 基于自激励单电子自旋电磁晶体管的应用电路
CN109449284B (zh) * 2018-09-17 2019-06-28 北京应用物理与计算数学研究所 一种基于挠曲机制的三碘化铬电流自旋控制器
CN109346599A (zh) * 2018-09-26 2019-02-15 中国科学技术大学 多铁隧道结忆阻器及其制作方法
US12080783B2 (en) * 2020-03-05 2024-09-03 Wisconsin Alumni Research Foundation Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets
CN113611795B (zh) * 2021-06-15 2023-09-26 北京航空航天大学 垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法
US20250126851A1 (en) * 2022-07-05 2025-04-17 The Penn State Research Foundation An ultra-steep slope and high-performance strain effect transistor

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060133137A1 (en) * 2004-12-22 2006-06-22 Korea Advanced Institute Of Science And Technology Voltage-controlled magnetization reversal writing type magnetic random access memory device and method of writing and reading information using the same
CN1841768A (zh) * 2005-03-31 2006-10-04 株式会社东芝 自旋注入场效应晶体管、磁随机存取存储器和可重构逻辑电路
CN101140952A (zh) * 2006-09-08 2008-03-12 株式会社东芝 自旋金属氧化物半导体场效应晶体管
CN101378072A (zh) * 2007-08-28 2009-03-04 株式会社东芝 自旋fet和磁阻元件

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829157B2 (en) 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US7282755B2 (en) 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
JP2006237304A (ja) * 2005-02-25 2006-09-07 Osaka Industrial Promotion Organization 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ
US7851877B2 (en) 2005-03-24 2010-12-14 Japan Science And Technology Agency Logic circuit and single-electron spin transistor
US7791152B2 (en) 2008-05-12 2010-09-07 International Business Machines Corporation Magnetic tunnel junction transistor
US8054677B2 (en) * 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8310861B2 (en) 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060133137A1 (en) * 2004-12-22 2006-06-22 Korea Advanced Institute Of Science And Technology Voltage-controlled magnetization reversal writing type magnetic random access memory device and method of writing and reading information using the same
CN1841768A (zh) * 2005-03-31 2006-10-04 株式会社东芝 自旋注入场效应晶体管、磁随机存取存储器和可重构逻辑电路
CN101140952A (zh) * 2006-09-08 2008-03-12 株式会社东芝 自旋金属氧化物半导体场效应晶体管
CN101378072A (zh) * 2007-08-28 2009-03-04 株式会社东芝 自旋fet和磁阻元件

Also Published As

Publication number Publication date
EP2847806B1 (en) 2017-01-18
JP5902349B2 (ja) 2016-04-13
KR20150002898A (ko) 2015-01-07
WO2013170070A3 (en) 2014-02-27
EP2847806A2 (en) 2015-03-18
KR101613199B1 (ko) 2016-04-18
JP2015520949A (ja) 2015-07-23
CN104303326A (zh) 2015-01-21
US9076953B2 (en) 2015-07-07
WO2013170070A2 (en) 2013-11-14
US20130299880A1 (en) 2013-11-14

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