JP5902349B2 - 圧電層と関連するメモリ、メモリシステム、および方法を用いるスピントランジスタ - Google Patents

圧電層と関連するメモリ、メモリシステム、および方法を用いるスピントランジスタ Download PDF

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JP5902349B2
JP5902349B2 JP2015511714A JP2015511714A JP5902349B2 JP 5902349 B2 JP5902349 B2 JP 5902349B2 JP 2015511714 A JP2015511714 A JP 2015511714A JP 2015511714 A JP2015511714 A JP 2015511714A JP 5902349 B2 JP5902349 B2 JP 5902349B2
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spin
layer
ferromagnetic
transistor
ferromagnetic layer
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JP2015520949A5 (enExample
JP2015520949A (ja
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ドゥ、ヤン
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Qualcomm Inc
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Qualcomm Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/385—Devices using spin-polarised carriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
  • Mram Or Spin Memory Techniques (AREA)
JP2015511714A 2012-05-09 2013-05-09 圧電層と関連するメモリ、メモリシステム、および方法を用いるスピントランジスタ Active JP5902349B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201261644592P 2012-05-09 2012-05-09
US61/644,592 2012-05-09
US13/746,011 US9076953B2 (en) 2012-05-09 2013-01-21 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods
US13/746,011 2013-01-21
PCT/US2013/040406 WO2013170070A2 (en) 2012-05-09 2013-05-09 Spin transistors employing a piezoelectric layer and related memory, memory systems, and methods

Publications (3)

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JP2015520949A JP2015520949A (ja) 2015-07-23
JP2015520949A5 JP2015520949A5 (enExample) 2015-10-01
JP5902349B2 true JP5902349B2 (ja) 2016-04-13

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JP2015511714A Active JP5902349B2 (ja) 2012-05-09 2013-05-09 圧電層と関連するメモリ、メモリシステム、および方法を用いるスピントランジスタ

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US (1) US9076953B2 (enExample)
EP (1) EP2847806B1 (enExample)
JP (1) JP5902349B2 (enExample)
KR (1) KR101613199B1 (enExample)
CN (1) CN104303326B (enExample)
WO (1) WO2013170070A2 (enExample)

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* Cited by examiner, † Cited by third party
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KR20130017267A (ko) * 2011-08-10 2013-02-20 에스케이하이닉스 주식회사 반도체 장치 및 그 제조 방법
WO2015137256A1 (ja) * 2014-03-14 2015-09-17 独立行政法人科学技術振興機構 ピエゾ抵抗体をチャネルに用いたトランジスタおよび電子回路
US10263036B2 (en) * 2014-09-25 2019-04-16 Intel Corporation Strain assisted spin torque switching spin transfer torque memory
JP6824504B2 (ja) 2015-03-06 2021-02-03 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ、磁気メモリへのデータ書き込み方法及び半導体装置
JP2016194964A (ja) 2015-04-01 2016-11-17 株式会社ＢｌｕｅＳｐｉｎ 磁気メモリ及びその動作方法
CN113694075A (zh) * 2015-06-10 2021-11-26 得克萨斯州大学系统董事会 用于医治疾病的外泌体的用途
US9825218B2 (en) 2015-10-13 2017-11-21 Board Of Regents, The University Of Texas System Transistor that employs collective magnetic effects thereby providing improved energy efficiency
CN109690675B (zh) * 2016-06-28 2022-11-04 赢世通股份有限公司 一种可应用于磁电隧道结的新型字线脉冲写入方法
GB2560936A (en) * 2017-03-29 2018-10-03 Univ Warwick Spin electronic device
CN108344956B (zh) * 2018-01-23 2020-06-12 湖北工业大学 基于自激励单电子自旋电磁晶体管的应用电路
CN109449284B (zh) * 2018-09-17 2019-06-28 北京应用物理与计算数学研究所 一种基于挠曲机制的三碘化铬电流自旋控制器
CN109346599A (zh) * 2018-09-26 2019-02-15 中国科学技术大学 多铁隧道结忆阻器及其制作方法
US12080783B2 (en) * 2020-03-05 2024-09-03 Wisconsin Alumni Research Foundation Spin transistors based on voltage-controlled magnon transport in multiferroic antiferromagnets
CN113611795B (zh) * 2021-06-15 2023-09-26 北京航空航天大学 垂直结构堆叠的磁旋逻辑器件及实现信息存取的方法
US20250126851A1 (en) * 2022-07-05 2025-04-17 The Penn State Research Foundation An ultra-steep slope and high-performance strain effect transistor

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6829157B2 (en) 2001-12-05 2004-12-07 Korea Institute Of Science And Technology Method of controlling magnetization easy axis in ferromagnetic films using voltage, ultrahigh-density, low power, nonvolatile magnetic memory using the control method, and method of writing information on the magnetic memory
US7282755B2 (en) 2003-11-14 2007-10-16 Grandis, Inc. Stress assisted current driven switching for magnetic memory applications
KR100754930B1 (ko) 2004-12-22 2007-09-03 한국과학기술원 전압제어 자화반전 기록방식의 ｍｒａｍ 소자 및 이를이용한 정보의 기록 및 판독 방법
JP2006237304A (ja) * 2005-02-25 2006-09-07 Osaka Industrial Promotion Organization 強磁性伝導体材料およびその製造方法、並びに磁気抵抗素子、電界効果トランジスタ
JP4574674B2 (ja) * 2005-03-24 2010-11-04 独立行政法人科学技術振興機構 論理回路および単電子スピントランジスタ
JP4528660B2 (ja) * 2005-03-31 2010-08-18 株式会社東芝 スピン注入ｆｅｔ
JP4455558B2 (ja) * 2006-09-08 2010-04-21 株式会社東芝 スピンｍｏｓｆｅｔ
JP4996390B2 (ja) * 2007-08-28 2012-08-08 株式会社東芝 スピンｆｅｔ及び磁気抵抗効果素子
US7791152B2 (en) * 2008-05-12 2010-09-07 International Business Machines Corporation Magnetic tunnel junction transistor
US8054677B2 (en) * 2008-08-07 2011-11-08 Seagate Technology Llc Magnetic memory with strain-assisted exchange coupling switch
US8310861B2 (en) 2008-09-30 2012-11-13 Micron Technology, Inc. STT-MRAM cell structure incorporating piezoelectric stress material

Also Published As

Publication number Publication date
US20130299880A1 (en) 2013-11-14
WO2013170070A2 (en) 2013-11-14
EP2847806A2 (en) 2015-03-18
EP2847806B1 (en) 2017-01-18
US9076953B2 (en) 2015-07-07
CN104303326B (zh) 2016-10-19
WO2013170070A3 (en) 2014-02-27
CN104303326A (zh) 2015-01-21
JP2015520949A (ja) 2015-07-23
KR20150002898A (ko) 2015-01-07
KR101613199B1 (ko) 2016-04-18

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