JP2017512383A5 - - Google Patents
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- JP2017512383A5 JP2017512383A5 JP2016555816A JP2016555816A JP2017512383A5 JP 2017512383 A5 JP2017512383 A5 JP 2017512383A5 JP 2016555816 A JP2016555816 A JP 2016555816A JP 2016555816 A JP2016555816 A JP 2016555816A JP 2017512383 A5 JP2017512383 A5 JP 2017512383A5
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- source
- spacer
- contact
- gap
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
- 125000006850 spacer group Chemical group 0.000 claims 16
- 239000004065 semiconductor Substances 0.000 claims 15
- 239000000758 substrate Substances 0.000 claims 9
- 230000003213 activating effect Effects 0.000 claims 7
- 239000000463 material Substances 0.000 claims 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 2
- 239000003989 dielectric material Substances 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 229910052710 silicon Inorganic materials 0.000 claims 2
- 239000010703 silicon Substances 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000001413 cellular effect Effects 0.000 claims 1
- 238000004891 communication Methods 0.000 claims 1
- 238000010295 mobile communication Methods 0.000 claims 1
- 150000004767 nitrides Chemical class 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201461950681P | 2014-03-10 | 2014-03-10 | |
| US61/950,681 | 2014-03-10 | ||
| US14/341,568 | 2014-07-25 | ||
| US14/341,568 US9871121B2 (en) | 2014-03-10 | 2014-07-25 | Semiconductor device having a gap defined therein |
| PCT/US2015/018806 WO2015138202A1 (en) | 2014-03-10 | 2015-03-04 | Semiconductor device having a gap defined therein |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2017512383A JP2017512383A (ja) | 2017-05-18 |
| JP2017512383A5 true JP2017512383A5 (enExample) | 2018-03-08 |
Family
ID=54018206
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016555816A Ceased JP2017512383A (ja) | 2014-03-10 | 2015-03-04 | 中にギャップが画定されている半導体デバイス |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9871121B2 (enExample) |
| EP (1) | EP3117464A1 (enExample) |
| JP (1) | JP2017512383A (enExample) |
| KR (1) | KR20160132011A (enExample) |
| CN (1) | CN106104807B (enExample) |
| WO (1) | WO2015138202A1 (enExample) |
Families Citing this family (43)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8921191B2 (en) * | 2013-02-05 | 2014-12-30 | GlobalFoundries, Inc. | Integrated circuits including FINFET devices with lower contact resistance and reduced parasitic capacitance and methods for fabricating the same |
| US9871121B2 (en) | 2014-03-10 | 2018-01-16 | Qualcomm Incorporated | Semiconductor device having a gap defined therein |
| US9312360B2 (en) * | 2014-05-01 | 2016-04-12 | International Business Machines Corporation | FinFET with epitaxial source and drain regions and dielectric isolated channel region |
| KR20160148795A (ko) * | 2015-06-16 | 2016-12-27 | 삼성전자주식회사 | 반도체 소자 및 이의 제조 방법 |
| DE102016102679B4 (de) | 2015-09-15 | 2024-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fets und verfahren zum bilden von fets |
| US10164029B2 (en) | 2015-12-18 | 2018-12-25 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor structure and manufacturing method thereof |
| US9627514B1 (en) | 2015-12-28 | 2017-04-18 | Samsung Electronics Co., Ltd. | Semiconductor device and method of fabricating the same |
| US9570567B1 (en) | 2015-12-30 | 2017-02-14 | Taiwan Semiconductor Manufacturing Co., Ltd. | Source and drain process for FinFET |
| US9608065B1 (en) * | 2016-06-03 | 2017-03-28 | International Business Machines Corporation | Air gap spacer for metal gates |
| US9892961B1 (en) | 2016-08-09 | 2018-02-13 | International Business Machines Corporation | Air gap spacer formation for nano-scale semiconductor devices |
| US10056468B2 (en) * | 2016-09-07 | 2018-08-21 | Globalfoundries Inc. | Source/drain parasitic capacitance reduction in FinFET-based semiconductor structure having tucked fins |
| US11088033B2 (en) | 2016-09-08 | 2021-08-10 | International Business Machines Corporation | Low resistance source-drain contacts using high temperature silicides |
| US10164104B2 (en) * | 2016-11-04 | 2018-12-25 | Globalfoundries Inc. | Method to form air-gap spacers and air-gap spacer-containing structures |
| CN108231590B (zh) | 2016-12-09 | 2023-03-14 | Imec 非营利协会 | 水平纳米线半导体器件 |
| US10319627B2 (en) * | 2016-12-13 | 2019-06-11 | Globalfoundries Inc. | Air-gap spacers for field-effect transistors |
| DE102017113681B4 (de) * | 2016-12-14 | 2024-12-24 | Taiwan Semiconductor Manufacturing Co. Ltd. | Halbleiter-bauelement mit luft-abstandshalter und herstellungsverfahren |
| US10229983B1 (en) | 2017-11-16 | 2019-03-12 | International Business Machines Corporation | Methods and structures for forming field-effect transistors (FETs) with low-k spacers |
| CN109962014B (zh) * | 2017-12-26 | 2022-10-04 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US10580875B2 (en) | 2018-01-17 | 2020-03-03 | Globalfoundries Inc. | Middle of line structures |
| TWI705529B (zh) | 2018-02-15 | 2020-09-21 | 美商應用材料股份有限公司 | 空氣間隙形成處理 |
| US10916478B2 (en) * | 2018-02-20 | 2021-02-09 | Globalfoundries U.S. Inc. | Methods of performing fin cut etch processes for FinFET semiconductor devices |
| US10636894B2 (en) * | 2018-03-09 | 2020-04-28 | Globalfoundries Inc. | Fin-type transistors with spacers on the gates |
| US10573724B2 (en) | 2018-04-10 | 2020-02-25 | International Business Machines Corporation | Contact over active gate employing a stacked spacer |
| KR102505065B1 (ko) | 2018-04-26 | 2023-03-02 | 삼성전자주식회사 | 게이트 분리 영역을 포함하는 반도체 소자 |
| US10861953B2 (en) * | 2018-04-30 | 2020-12-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Air spacers in transistors and methods forming same |
| US10608096B2 (en) | 2018-06-11 | 2020-03-31 | International Business Machines Corporation | Formation of air gap spacers for reducing parasitic capacitance |
| US10510861B1 (en) * | 2018-06-15 | 2019-12-17 | Taiwan Semiconductor Manufacturing Company, Ltd. | Gaseous spacer and methods of forming same |
| US10522644B1 (en) | 2018-06-21 | 2019-12-31 | Globalfoundries Inc. | Different upper and lower spacers for contact |
| US11869891B2 (en) | 2018-09-28 | 2024-01-09 | Intel Corporation | Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process |
| US10818659B2 (en) * | 2018-10-16 | 2020-10-27 | Globalfoundries Inc. | FinFET having upper spacers adjacent gate and source/drain contacts |
| US10868130B2 (en) * | 2018-10-31 | 2020-12-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacture |
| US10903111B2 (en) | 2019-03-20 | 2021-01-26 | International Business Machines Corporation | Semiconductor device with linerless contacts |
| CN111863963A (zh) * | 2019-04-24 | 2020-10-30 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件及其形成方法 |
| US11769814B2 (en) * | 2019-06-27 | 2023-09-26 | Intel Corporation | Device including air gapping of gate spacers and other dielectrics and process for providing such |
| US11600695B2 (en) | 2020-05-29 | 2023-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielectric fins with air gap and backside self-aligned contact |
| DE102020133440B4 (de) * | 2020-05-29 | 2024-01-11 | Taiwan Semiconductor Manufacturing Co., Ltd. | Dielektrische Finnen mit Luftspalt und selbstjustiertem Rückseitenkontakt und zugehörige Herstellungsverfahren |
| KR102827570B1 (ko) * | 2020-12-08 | 2025-06-30 | 삼성전자주식회사 | 반도체 장치 |
| KR102800629B1 (ko) * | 2020-12-10 | 2025-04-24 | 삼성전자주식회사 | 반도체 장치 |
| US20220231023A1 (en) * | 2021-01-15 | 2022-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Finfet device and method |
| US11489060B2 (en) * | 2021-02-08 | 2022-11-01 | Nanya Technology Corporation | Semiconductor device with gate spacer and manufacturing method of the semiconductor device |
| US11848384B2 (en) * | 2021-09-27 | 2023-12-19 | International Business Machines Corporation | Semiconductor device with airgap spacer formation from backside of wafer |
| US11876117B2 (en) | 2021-10-18 | 2024-01-16 | International Business Machines Corporation | Field effect transistor with reduced parasitic capacitance and resistance |
| CN117096172A (zh) * | 2022-05-12 | 2023-11-21 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3544833B2 (ja) * | 1997-09-18 | 2004-07-21 | 株式会社東芝 | 半導体装置及びその製造方法 |
| US6180988B1 (en) | 1997-12-04 | 2001-01-30 | Texas Instruments-Acer Incorporated | Self-aligned silicided MOSFETS with a graded S/D junction and gate-side air-gap structure |
| US6737716B1 (en) * | 1999-01-29 | 2004-05-18 | Kabushiki Kaisha Toshiba | Semiconductor device and method of manufacturing the same |
| TW476135B (en) | 2001-01-09 | 2002-02-11 | United Microelectronics Corp | Manufacture of semiconductor with air gap |
| JP2004119549A (ja) * | 2002-09-25 | 2004-04-15 | Matsushita Electric Ind Co Ltd | 半導体装置およびその製造方法 |
| KR100487656B1 (ko) | 2003-08-12 | 2005-05-03 | 삼성전자주식회사 | 반도체 기판과 ″ｌ″형 스페이서 사이에 에어 갭을구비하는 반도체 소자 및 그 제조 방법 |
| DE102004052388B4 (de) | 2004-10-28 | 2016-05-25 | Infineon Technologies Ag | Halbleiterbauelement sowie zugehöriges Herstellungsverfahren |
| JP2007200972A (ja) * | 2006-01-24 | 2007-08-09 | Nec Electronics Corp | 半導体装置およびその製造方法 |
| US8428048B2 (en) * | 2006-02-21 | 2013-04-23 | Qualcomm Incorporated | Multi-program viewing in a wireless apparatus |
| US7691712B2 (en) | 2006-06-21 | 2010-04-06 | International Business Machines Corporation | Semiconductor device structures incorporating voids and methods of fabricating such structures |
| US7994040B2 (en) | 2007-04-13 | 2011-08-09 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and fabrication thereof |
| US7915659B2 (en) | 2008-03-06 | 2011-03-29 | Micron Technology, Inc. | Devices with cavity-defined gates and methods of making the same |
| US7838373B2 (en) * | 2008-07-30 | 2010-11-23 | Intel Corporation | Replacement spacers for MOSFET fringe capacitance reduction and processes of making same |
| US8362568B2 (en) | 2009-08-28 | 2013-01-29 | International Business Machines Corporation | Recessed contact for multi-gate FET optimizing series resistance |
| US8232618B2 (en) | 2010-08-11 | 2012-07-31 | International Business Machines Corporation | Semiconductor structure having a contact-level air gap within the interlayer dielectrics above a semiconductor device and a method of forming the semiconductor structure using a self-assembly approach |
| US8390079B2 (en) | 2010-10-28 | 2013-03-05 | International Business Machines Corporation | Sealed air gap for semiconductor chip |
| US20120199886A1 (en) | 2011-02-03 | 2012-08-09 | International Business Machines Corporation | Sealed air gap for semiconductor chip |
| KR20120121795A (ko) | 2011-04-27 | 2012-11-06 | 에스케이하이닉스 주식회사 | 에어 갭을 포함하는 스페이서를 구비한 반도체 소자의 제조방법 |
| CN102214595B (zh) | 2011-05-26 | 2012-10-10 | 北京大学 | 一种空气为侧墙的围栅硅纳米线晶体管的制备方法 |
| US8471343B2 (en) | 2011-08-24 | 2013-06-25 | International Bussiness Machines Corporation | Parasitic capacitance reduction in MOSFET by airgap ild |
| US8637930B2 (en) | 2011-10-13 | 2014-01-28 | International Business Machines Company | FinFET parasitic capacitance reduction using air gap |
| US20130299920A1 (en) | 2012-05-08 | 2013-11-14 | Haizhou Yin | Semiconductor device and method for manufacturing the same |
| US9871121B2 (en) | 2014-03-10 | 2018-01-16 | Qualcomm Incorporated | Semiconductor device having a gap defined therein |
| US9559184B2 (en) * | 2015-06-15 | 2017-01-31 | Taiwan Semiconductor Manufacturing Company, Ltd. | Devices including gate spacer with gap or void and methods of forming the same |
-
2014
- 2014-07-25 US US14/341,568 patent/US9871121B2/en active Active
-
2015
- 2015-03-04 KR KR1020167023420A patent/KR20160132011A/ko not_active Ceased
- 2015-03-04 WO PCT/US2015/018806 patent/WO2015138202A1/en not_active Ceased
- 2015-03-04 JP JP2016555816A patent/JP2017512383A/ja not_active Ceased
- 2015-03-04 CN CN201580012747.1A patent/CN106104807B/zh not_active Expired - Fee Related
- 2015-03-04 EP EP15710374.8A patent/EP3117464A1/en not_active Withdrawn
-
2017
- 2017-12-12 US US15/839,050 patent/US10079293B2/en not_active Expired - Fee Related
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