JP2016537818A5 - - Google Patents
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- Publication number
- JP2016537818A5 JP2016537818A5 JP2016532536A JP2016532536A JP2016537818A5 JP 2016537818 A5 JP2016537818 A5 JP 2016537818A5 JP 2016532536 A JP2016532536 A JP 2016532536A JP 2016532536 A JP2016532536 A JP 2016532536A JP 2016537818 A5 JP2016537818 A5 JP 2016537818A5
- Authority
- JP
- Japan
- Prior art keywords
- fin structure
- single crystal
- temperature
- implanting
- fin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 claims 9
- 238000000034 method Methods 0.000 claims 8
- 239000000463 material Substances 0.000 claims 7
- 238000005280 amorphization Methods 0.000 claims 2
- 239000000758 substrate Substances 0.000 claims 2
- 238000000137 annealing Methods 0.000 claims 1
- 230000007547 defect Effects 0.000 claims 1
- 238000005530 etching Methods 0.000 claims 1
- 230000005669 field effect Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 239000011810 insulating material Substances 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361908003P | 2013-11-22 | 2013-11-22 | |
| US61/908,003 | 2013-11-22 | ||
| US14/269,828 | 2014-05-05 | ||
| US14/269,828 US20150145069A1 (en) | 2013-11-22 | 2014-05-05 | Silicon germanium finfet formation |
| PCT/US2014/061226 WO2015076957A1 (en) | 2013-11-22 | 2014-10-17 | Silicon germanium finfet formation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2016537818A JP2016537818A (ja) | 2016-12-01 |
| JP2016537818A5 true JP2016537818A5 (enExample) | 2017-11-09 |
Family
ID=51799344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016532536A Pending JP2016537818A (ja) | 2013-11-22 | 2014-10-17 | シリコンゲルマニウムＦｉｎＦＥＴ形成 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20150145069A1 (enExample) |
| EP (1) | EP3072157A1 (enExample) |
| JP (1) | JP2016537818A (enExample) |
| CN (1) | CN105745757A (enExample) |
| WO (1) | WO2015076957A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9679899B2 (en) | 2015-08-24 | 2017-06-13 | Stmicroelectronics, Inc. | Co-integration of tensile silicon and compressive silicon germanium |
| US9735155B2 (en) | 2015-12-14 | 2017-08-15 | International Business Machines Corporation | Bulk silicon germanium FinFET |
| US9680019B1 (en) * | 2016-07-20 | 2017-06-13 | Globalfoundries Inc. | Fin-type field-effect transistors with strained channels |
Family Cites Families (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206951A1 (en) * | 2003-04-18 | 2004-10-21 | Mirabedini Mohammad R. | Ion implantation in channel region of CMOS device for enhanced carrier mobility |
| US20060163581A1 (en) * | 2005-01-24 | 2006-07-27 | Lsi Logic Corporation | Fabrication of strained silicon film via implantation at elevated substrate temperatures |
| US20070257315A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors |
| US7629220B2 (en) * | 2006-06-30 | 2009-12-08 | Freescale Semiconductor, Inc. | Method for forming a semiconductor device and structure thereof |
| US7767560B2 (en) * | 2007-09-29 | 2010-08-03 | Intel Corporation | Three dimensional strained quantum wells and three dimensional strained surface channels by Ge confinement method |
| US8557692B2 (en) * | 2010-01-12 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET LDD and source drain implant technique |
| US8709928B2 (en) * | 2010-01-19 | 2014-04-29 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor fin device and method for forming the same using high tilt angle implant |
| US8598025B2 (en) * | 2010-11-15 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Doping of planar or three-dimensional structures at elevated temperatures |
| CN102779753B (zh) * | 2011-05-12 | 2015-05-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件制造方法 |
| CN103021827B (zh) * | 2011-09-27 | 2015-07-08 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管、cmos鳍式场效应管的形成方法 |
| CN103187297B (zh) * | 2011-12-31 | 2016-06-29 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的制作方法 |
| US8722431B2 (en) * | 2012-03-22 | 2014-05-13 | Varian Semiconductor Equipment Associates, Inc. | FinFET device fabrication using thermal implantation |
| US8946792B2 (en) * | 2012-11-26 | 2015-02-03 | International Business Machines Corporation | Dummy fin formation by gas cluster ion beam |
| US9299564B2 (en) * | 2012-12-12 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Ion implant for defect control |
| US9299809B2 (en) * | 2012-12-17 | 2016-03-29 | Globalfoundries Inc. | Methods of forming fins for a FinFET device wherein the fins have a high germanium content |
| US8957476B2 (en) * | 2012-12-20 | 2015-02-17 | Intel Corporation | Conversion of thin transistor elements from silicon to silicon germanium |
| US9299840B2 (en) * | 2013-03-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US8895395B1 (en) * | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
| US8952420B1 (en) * | 2013-07-29 | 2015-02-10 | Stmicroelectronics, Inc. | Method to induce strain in 3-D microfabricated structures |
| US9142650B2 (en) * | 2013-09-18 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company Limited | Tilt implantation for forming FinFETs |
| CN103972104A (zh) * | 2014-05-05 | 2014-08-06 | 清华大学 | 具有SiGe沟道的鳍式场效应晶体管及其形成方法 |
-
2014
- 2014-05-05 US US14/269,828 patent/US20150145069A1/en not_active Abandoned
- 2014-10-17 EP EP14789964.5A patent/EP3072157A1/en not_active Withdrawn
- 2014-10-17 CN CN201480062871.4A patent/CN105745757A/zh active Pending
- 2014-10-17 JP JP2016532536A patent/JP2016537818A/ja active Pending
- 2014-10-17 WO PCT/US2014/061226 patent/WO2015076957A1/en not_active Ceased
-
2016
- 2016-04-12 US US15/097,127 patent/US20160225881A1/en not_active Abandoned
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