JP2017535958A5 - - Google Patents
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- Publication number
- JP2017535958A5 JP2017535958A5 JP2017525055A JP2017525055A JP2017535958A5 JP 2017535958 A5 JP2017535958 A5 JP 2017535958A5 JP 2017525055 A JP2017525055 A JP 2017525055A JP 2017525055 A JP2017525055 A JP 2017525055A JP 2017535958 A5 JP2017535958 A5 JP 2017535958A5
- Authority
- JP
- Japan
- Prior art keywords
- fin
- finfet device
- source
- region
- contact
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 6
- 229910021332 silicide Inorganic materials 0.000 claims 5
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims 5
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 4
- 150000004706 metal oxides Chemical class 0.000 claims 4
- 238000000034 method Methods 0.000 claims 4
- 239000010936 titanium Substances 0.000 claims 4
- 229910052719 titanium Inorganic materials 0.000 claims 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 4
- 238000000151 deposition Methods 0.000 claims 3
- 229910010413 TiO 2 Inorganic materials 0.000 claims 2
- 230000005669 field effect Effects 0.000 claims 2
- 239000012212 insulator Substances 0.000 claims 2
- 238000002955 isolation Methods 0.000 claims 2
- 239000000463 material Substances 0.000 claims 2
- 229910052751 metal Inorganic materials 0.000 claims 2
- 239000002184 metal Substances 0.000 claims 2
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 claims 1
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 229910052732 germanium Inorganic materials 0.000 claims 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims 1
- 229910052710 silicon Inorganic materials 0.000 claims 1
- 239000010703 silicon Substances 0.000 claims 1
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201462083714P | 2014-11-24 | 2014-11-24 | |
| US62/083,714 | 2014-11-24 | ||
| US14/673,485 | 2015-03-30 | ||
| US14/673,485 US9953979B2 (en) | 2014-11-24 | 2015-03-30 | Contact wrap around structure |
| PCT/US2015/053305 WO2016085570A1 (en) | 2014-11-24 | 2015-09-30 | Contact wrap around structure |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2017535958A JP2017535958A (ja) | 2017-11-30 |
| JP2017535958A5 true JP2017535958A5 (enExample) | 2018-10-18 |
| JP6659686B2 JP6659686B2 (ja) | 2020-03-04 |
Family
ID=56010980
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2017525055A Active JP6659686B2 (ja) | 2014-11-24 | 2015-09-30 | コンタクトラップアラウンド構造 |
Country Status (9)
| Country | Link |
|---|---|
| US (1) | US9953979B2 (enExample) |
| EP (1) | EP3224868B1 (enExample) |
| JP (1) | JP6659686B2 (enExample) |
| KR (1) | KR20170086517A (enExample) |
| CN (1) | CN107112284B (enExample) |
| BR (1) | BR112017010750B1 (enExample) |
| SG (1) | SG11201702858QA (enExample) |
| TW (1) | TW201631763A (enExample) |
| WO (1) | WO2016085570A1 (enExample) |
Families Citing this family (39)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US9443769B2 (en) * | 2014-04-21 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wrap-around contact |
| US9721896B2 (en) * | 2015-09-11 | 2017-08-01 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnection structure, fabricating method thereof, and semiconductor device using the same |
| US10573749B2 (en) * | 2016-02-25 | 2020-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin-type field effect transistor structure and manufacturing method thereof |
| TWI697096B (zh) * | 2016-06-14 | 2020-06-21 | 聯華電子股份有限公司 | 半導體元件及其製作方法 |
| US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
| US10134905B2 (en) * | 2016-06-30 | 2018-11-20 | International Business Machines Corporation | Semiconductor device including wrap around contact, and method of forming the semiconductor device |
| CN109314137B (zh) * | 2016-07-02 | 2023-06-02 | 太浩研究有限公司 | 带有释放的源极和漏极的半导体装置 |
| CN107887262B (zh) * | 2016-09-30 | 2020-01-14 | 中芯国际集成电路制造(北京)有限公司 | 半导体装置及其制造方法 |
| US9773781B1 (en) * | 2016-11-03 | 2017-09-26 | Globalfoundries Inc. | Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structure |
| WO2018094205A1 (en) | 2016-11-18 | 2018-05-24 | Acorn Technologies, Inc. | Nanowire transistor with source and drain induced by electrical contacts with negative schottky barrier height |
| US11437516B2 (en) | 2016-11-28 | 2022-09-06 | Taiwan Semiconductor Manufacturing Co., Ltd. | Mechanisms for growing epitaxy structure of finFET device |
| US20180212029A1 (en) * | 2017-01-20 | 2018-07-26 | Qualcomm Incorporated | Semiconductor devices employing reduced area conformal contacts to reduce parasitic capacitance, and related methods |
| US10084094B1 (en) | 2017-03-17 | 2018-09-25 | International Business Machines Corporation | Wrapped source/drain contacts with enhanced area |
| US10685884B2 (en) | 2017-07-31 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including a Fin-FET and method of manufacturing the same |
| DE112017007835T5 (de) | 2017-09-26 | 2020-05-07 | Intel Corporation | Bildung von kristallinen source-/drain-kontakten an halbleitervorrichtungen |
| EP3480842A1 (en) | 2017-11-02 | 2019-05-08 | IMEC vzw | Method for forming source/drain contacts |
| US10586853B2 (en) | 2017-11-27 | 2020-03-10 | International Business Machines Corporation | Non-planar field effect transistor devices with wrap-around source/drain contacts |
| CN109994418A (zh) * | 2017-12-29 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | 半导体结构及其形成方法 |
| US11227799B2 (en) * | 2018-04-05 | 2022-01-18 | Intel Corporation | Wrap-around contact structures for semiconductor fins |
| US10367077B1 (en) | 2018-04-27 | 2019-07-30 | International Business Machines Corporation | Wrap around contact using sacrificial mandrel |
| TWI845516B (zh) * | 2018-06-22 | 2024-06-21 | 日商東京威力科創股份有限公司 | 奈米線裝置的形成方法 |
| US10586872B2 (en) | 2018-07-03 | 2020-03-10 | International Business Machines Corporation | Formation of wrap-around-contact to reduce contact resistivity |
| US11114566B2 (en) * | 2018-07-12 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing the same |
| US10483361B1 (en) | 2018-08-29 | 2019-11-19 | International Business Machines Corporation | Wrap-around-contact structure for top source/drain in vertical FETs |
| US10665590B2 (en) * | 2018-10-16 | 2020-05-26 | Globalfoundries Inc. | Wrap-around contact surrounding epitaxial regions of integrated circuit structures and method of forming same |
| US11527640B2 (en) | 2019-01-03 | 2022-12-13 | Intel Corporation | Wrap-around contact structures for semiconductor nanowires and nanoribbons |
| US11677026B2 (en) | 2019-03-04 | 2023-06-13 | International Business Machines Corporation | Transistor having wrap-around source/drain contacts |
| US10734490B1 (en) | 2019-03-22 | 2020-08-04 | International Business Machines Corporation | Bipolar junction transistor (BJT) with 3D wrap around emitter |
| US20200350412A1 (en) * | 2019-05-01 | 2020-11-05 | Intel Corporation | Thin film transistors having alloying source or drain metals |
| US11658245B2 (en) * | 2019-10-29 | 2023-05-23 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing |
| US11211452B1 (en) | 2020-06-30 | 2021-12-28 | International Business Machines Corporation | Transistor having stacked source/drain regions with formation assistance regions and multi-region wrap-around source/drain contacts |
| US11521894B2 (en) | 2020-07-18 | 2022-12-06 | International Business Machines Corporation | Partial wrap around top contact |
| US11424367B2 (en) | 2020-12-16 | 2022-08-23 | International Business Machines Corporation | Wrap-around contacts including localized metal silicide |
| JP7464554B2 (ja) | 2021-03-12 | 2024-04-09 | 株式会社東芝 | 高周波トランジスタ |
| US20220392840A1 (en) * | 2021-06-04 | 2022-12-08 | Intel Corporation | Conductive via structures for gate contact or trench contact |
| US20230114507A1 (en) * | 2021-10-12 | 2023-04-13 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
| US12439631B2 (en) | 2021-11-22 | 2025-10-07 | International Business Machines Corporation | Non-self-aligned wrap-around contact in a tight gate pitched transistor |
| US12432968B2 (en) | 2021-12-01 | 2025-09-30 | International Business Machines Corporation | Nanowire source/drain formation for nanosheet device |
| US20250359133A1 (en) * | 2022-06-22 | 2025-11-20 | Sony Semiconductor Solutions Corporation | Semiconductor device and electronic apparatus |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7105894B2 (en) | 2003-02-27 | 2006-09-12 | Taiwan Semiconductor Manufacturing Co., Ltd. | Contacts to semiconductor fin devices |
| US7612416B2 (en) | 2003-10-09 | 2009-11-03 | Nec Corporation | Semiconductor device having a conductive portion below an interlayer insulating film and method for producing the same |
| WO2005091374A1 (ja) * | 2004-03-19 | 2005-09-29 | Nec Corporation | 半導体装置及びその製造方法 |
| US7282766B2 (en) | 2005-01-17 | 2007-10-16 | Fujitsu Limited | Fin-type semiconductor device with low contact resistance |
| JP4718908B2 (ja) * | 2005-06-14 | 2011-07-06 | 株式会社東芝 | 半導体装置および半導体装置の製造方法 |
| US7667271B2 (en) | 2007-04-27 | 2010-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin field-effect transistors |
| JP5172264B2 (ja) * | 2007-10-01 | 2013-03-27 | 株式会社東芝 | 半導体装置 |
| US20110147840A1 (en) | 2009-12-23 | 2011-06-23 | Cea Stephen M | Wrap-around contacts for finfet and tri-gate devices |
| US8310013B2 (en) * | 2010-02-11 | 2012-11-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of fabricating a FinFET device |
| US8796759B2 (en) * | 2010-07-15 | 2014-08-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Fin-like field effect transistor (FinFET) device and method of manufacturing same |
| KR101779031B1 (ko) | 2011-12-19 | 2017-09-18 | 인텔 코포레이션 | 수직 트랜지스터와 그 제조방법, 및 고전압 트랜지스터 |
| US9006069B2 (en) * | 2011-12-19 | 2015-04-14 | Intel Corporation | Pulsed laser anneal process for transistors with partial melt of a raised source-drain |
| CN112563315A (zh) * | 2011-12-23 | 2021-03-26 | 索尼公司 | 半导体器件和集成电路结构 |
| KR20170121335A (ko) | 2011-12-30 | 2017-11-01 | 인텔 코포레이션 | 반도체 구조물 |
| KR101876793B1 (ko) * | 2012-02-27 | 2018-07-11 | 삼성전자주식회사 | 전계효과 트랜지스터 및 그 제조 방법 |
| US8766319B2 (en) | 2012-04-26 | 2014-07-01 | United Microelectronics Corp. | Semiconductor device with ultra thin silicide layer |
| US10535735B2 (en) | 2012-06-29 | 2020-01-14 | Intel Corporation | Contact resistance reduced P-MOS transistors employing Ge-rich contact layer |
| US9136383B2 (en) | 2012-08-09 | 2015-09-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure of semiconductor device |
| US20140054646A1 (en) | 2012-08-24 | 2014-02-27 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and Method for Multiple Gate Transistors |
| US8703556B2 (en) * | 2012-08-30 | 2014-04-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method of making a FinFET device |
| US9105490B2 (en) | 2012-09-27 | 2015-08-11 | Taiwan Semiconductor Manufacturing Company, Ltd. | Contact structure of semiconductor device |
| US8772109B2 (en) | 2012-10-24 | 2014-07-08 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for forming semiconductor contacts |
| CN103915372B (zh) | 2013-01-08 | 2016-08-31 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件的形成方法 |
| KR102049774B1 (ko) | 2013-01-24 | 2019-11-28 | 삼성전자 주식회사 | 반도체 장치 및 그 제조 방법 |
| KR20140106270A (ko) * | 2013-02-26 | 2014-09-03 | 삼성전자주식회사 | 집적 회로 장치 및 그 제조 방법 |
| US9117842B2 (en) | 2013-03-13 | 2015-08-25 | Globalfoundries Inc. | Methods of forming contacts to source/drain regions of FinFET devices |
| US20140264634A1 (en) * | 2013-03-14 | 2014-09-18 | Intermolecular, Inc. | Finfet for rf and analog integrated circuits |
| US9219133B2 (en) * | 2013-05-30 | 2015-12-22 | Stmicroelectronics, Inc. | Method of making a semiconductor device using spacers for source/drain confinement |
| EP3902016A1 (en) * | 2014-03-27 | 2021-10-27 | Intel Corporation | Confined epitaxial regions for semiconductor devices and methods of fabricating semiconductor devices having confined epitaxial regions |
| US10199502B2 (en) * | 2014-08-15 | 2019-02-05 | Taiwan Semiconductor Manufacturing Company, Ltd. | Structure of S/D contact and method of making same |
-
2015
- 2015-03-30 US US14/673,485 patent/US9953979B2/en active Active
- 2015-09-30 BR BR112017010750-3A patent/BR112017010750B1/pt active IP Right Grant
- 2015-09-30 KR KR1020177013686A patent/KR20170086517A/ko not_active Withdrawn
- 2015-09-30 JP JP2017525055A patent/JP6659686B2/ja active Active
- 2015-09-30 SG SG11201702858QA patent/SG11201702858QA/en unknown
- 2015-09-30 CN CN201580062646.5A patent/CN107112284B/zh active Active
- 2015-09-30 WO PCT/US2015/053305 patent/WO2016085570A1/en not_active Ceased
- 2015-09-30 EP EP15781512.7A patent/EP3224868B1/en active Active
- 2015-10-15 TW TW104133913A patent/TW201631763A/zh unknown
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