SG11201702858QA - Contact wrap around structure - Google Patents
Contact wrap around structureInfo
- Publication number
- SG11201702858QA SG11201702858QA SG11201702858QA SG11201702858QA SG11201702858QA SG 11201702858Q A SG11201702858Q A SG 11201702858QA SG 11201702858Q A SG11201702858Q A SG 11201702858QA SG 11201702858Q A SG11201702858Q A SG 11201702858QA SG 11201702858Q A SG11201702858Q A SG 11201702858QA
- Authority
- SG
- Singapore
- Prior art keywords
- wrap around
- around structure
- contact wrap
- contact
- wrap
- Prior art date
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823821—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
- H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
- H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors
- H01L27/0924—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors including transistors with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
- H01L29/0669—Nanowires or nanotubes
- H01L29/0673—Nanowires or nanotubes oriented parallel to a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/0843—Source or drain regions of field-effect devices
- H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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- H01L29/417—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions carrying the current to be rectified, amplified or switched
- H01L29/41725—Source or drain electrodes for field effect devices
- H01L29/41791—Source or drain electrodes for field effect devices for transistors with a horizontal current flow in a vertical sidewall, e.g. FinFET, MuGFET
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
- H01L29/42392—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor fully surrounding the channel, e.g. gate-all-around
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66787—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel
- H01L29/66795—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a gate at the side of the channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/775—Field effect transistors with one dimensional charge carrier gas channel, e.g. quantum wire FET
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
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- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L2029/7858—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET having contacts specially adapted to the FinFET geometry, e.g. wrap-around contacts
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201462083714P | 2014-11-24 | 2014-11-24 | |
US14/673,485 US9953979B2 (en) | 2014-11-24 | 2015-03-30 | Contact wrap around structure |
PCT/US2015/053305 WO2016085570A1 (en) | 2014-11-24 | 2015-09-30 | Contact wrap around structure |
Publications (1)
Publication Number | Publication Date |
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SG11201702858QA true SG11201702858QA (en) | 2017-06-29 |
Family
ID=56010980
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
SG11201702858QA SG11201702858QA (en) | 2014-11-24 | 2015-09-30 | Contact wrap around structure |
Country Status (9)
Country | Link |
---|---|
US (1) | US9953979B2 (en) |
EP (1) | EP3224868A1 (en) |
JP (1) | JP6659686B2 (en) |
KR (1) | KR20170086517A (en) |
CN (1) | CN107112284B (en) |
BR (1) | BR112017010750B1 (en) |
SG (1) | SG11201702858QA (en) |
TW (1) | TW201631763A (en) |
WO (1) | WO2016085570A1 (en) |
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US9443769B2 (en) * | 2014-04-21 | 2016-09-13 | Taiwan Semiconductor Manufacturing Company, Ltd. | Wrap-around contact |
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US10573749B2 (en) * | 2016-02-25 | 2020-02-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Fin-type field effect transistor structure and manufacturing method thereof |
TWI697096B (en) * | 2016-06-14 | 2020-06-21 | 聯華電子股份有限公司 | Semiconductor device and method for fabricating the same |
US9620611B1 (en) | 2016-06-17 | 2017-04-11 | Acorn Technology, Inc. | MIS contact structure with metal oxide conductor |
US10134905B2 (en) * | 2016-06-30 | 2018-11-20 | International Business Machines Corporation | Semiconductor device including wrap around contact, and method of forming the semiconductor device |
CN109314137B (en) * | 2016-07-02 | 2023-06-02 | 太浩研究有限公司 | Semiconductor device with released source and drain |
CN107887262B (en) * | 2016-09-30 | 2020-01-14 | 中芯国际集成电路制造(北京)有限公司 | Semiconductor device and method for manufacturing the same |
US9773781B1 (en) * | 2016-11-03 | 2017-09-26 | Globalfoundries Inc. | Resistor and capacitor disposed directly upon a SAC cap of a gate structure of a semiconductor structure |
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US20180212029A1 (en) * | 2017-01-20 | 2018-07-26 | Qualcomm Incorporated | Semiconductor devices employing reduced area conformal contacts to reduce parasitic capacitance, and related methods |
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US10685884B2 (en) | 2017-07-31 | 2020-06-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device including a Fin-FET and method of manufacturing the same |
CN111095563A (en) | 2017-09-26 | 2020-05-01 | 英特尔公司 | Forming crystalline source/drain contacts on a semiconductor device |
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US10586853B2 (en) * | 2017-11-27 | 2020-03-10 | International Business Machines Corporation | Non-planar field effect transistor devices with wrap-around source/drain contacts |
CN109994418A (en) * | 2017-12-29 | 2019-07-09 | 中芯国际集成电路制造(上海)有限公司 | Semiconductor structure and forming method thereof |
US11227799B2 (en) * | 2018-04-05 | 2022-01-18 | Intel Corporation | Wrap-around contact structures for semiconductor fins |
US10367077B1 (en) | 2018-04-27 | 2019-07-30 | International Business Machines Corporation | Wrap around contact using sacrificial mandrel |
TW202017011A (en) * | 2018-06-22 | 2020-05-01 | 日商東京威力科創股份有限公司 | Method for forming a nanowire device |
US10586872B2 (en) | 2018-07-03 | 2020-03-10 | International Business Machines Corporation | Formation of wrap-around-contact to reduce contact resistivity |
US11114566B2 (en) * | 2018-07-12 | 2021-09-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method of manufacturing the same |
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US10665590B2 (en) * | 2018-10-16 | 2020-05-26 | Globalfoundries Inc. | Wrap-around contact surrounding epitaxial regions of integrated circuit structures and method of forming same |
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-
2015
- 2015-03-30 US US14/673,485 patent/US9953979B2/en active Active
- 2015-09-30 JP JP2017525055A patent/JP6659686B2/en active Active
- 2015-09-30 KR KR1020177013686A patent/KR20170086517A/en unknown
- 2015-09-30 EP EP15781512.7A patent/EP3224868A1/en active Pending
- 2015-09-30 BR BR112017010750-3A patent/BR112017010750B1/en active IP Right Grant
- 2015-09-30 CN CN201580062646.5A patent/CN107112284B/en active Active
- 2015-09-30 SG SG11201702858QA patent/SG11201702858QA/en unknown
- 2015-09-30 WO PCT/US2015/053305 patent/WO2016085570A1/en active Application Filing
- 2015-10-15 TW TW104133913A patent/TW201631763A/en unknown
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CN107112284B (en) | 2021-02-23 |
JP6659686B2 (en) | 2020-03-04 |
WO2016085570A1 (en) | 2016-06-02 |
TW201631763A (en) | 2016-09-01 |
BR112017010750B1 (en) | 2023-02-28 |
US9953979B2 (en) | 2018-04-24 |
EP3224868A1 (en) | 2017-10-04 |
JP2017535958A (en) | 2017-11-30 |
BR112017010750A2 (en) | 2018-01-09 |
CN107112284A (en) | 2017-08-29 |
KR20170086517A (en) | 2017-07-26 |
US20160148936A1 (en) | 2016-05-26 |
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