CN105745757A - 硅锗FinFET形成 - Google Patents
硅锗FinFET形成 Download PDFInfo
- Publication number
- CN105745757A CN105745757A CN201480062871.4A CN201480062871A CN105745757A CN 105745757 A CN105745757 A CN 105745757A CN 201480062871 A CN201480062871 A CN 201480062871A CN 105745757 A CN105745757 A CN 105745757A
- Authority
- CN
- China
- Prior art keywords
- fin structure
- fin
- finfet
- monocrystalline
- sige
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910000577 Silicon-germanium Inorganic materials 0.000 title claims description 33
- 230000015572 biosynthetic process Effects 0.000 title description 4
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 39
- 239000000758 substrate Substances 0.000 claims abstract description 26
- 239000013078 crystal Substances 0.000 claims abstract description 18
- 230000005669 field effect Effects 0.000 claims abstract description 13
- 230000007547 defect Effects 0.000 claims abstract description 9
- 229910052732 germanium Inorganic materials 0.000 claims description 16
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 16
- 238000004891 communication Methods 0.000 claims description 11
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 238000002347 injection Methods 0.000 claims 5
- 239000007924 injection Substances 0.000 claims 5
- 230000007704 transition Effects 0.000 claims 2
- 238000005280 amorphization Methods 0.000 abstract description 6
- 238000000137 annealing Methods 0.000 abstract description 6
- 239000004065 semiconductor Substances 0.000 description 23
- 238000003860 storage Methods 0.000 description 22
- 238000013461 design Methods 0.000 description 17
- 239000007943 implant Substances 0.000 description 15
- 239000011810 insulating material Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 12
- 239000002019 doping agent Substances 0.000 description 9
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 8
- 230000006870 function Effects 0.000 description 8
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 6
- 230000008901 benefit Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 238000009413 insulation Methods 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000004590 computer program Methods 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 230000009643 growth defect Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 208000012868 Overgrowth Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000000609 electron-beam lithography Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000012795 verification Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
- H10D30/0241—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET] doping of vertical sidewalls, e.g. using tilted or multi-angled implants
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26586—Bombardment with radiation with high-energy radiation producing ion implantation characterised by the angle between the ion beam and the crystal planes or the main crystal surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/01—Manufacture or treatment
- H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
- H10D30/024—Manufacture or treatment of FETs having insulated gates [IGFET] of fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/62—Fin field-effect transistors [FinFET]
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/751—Insulated-gate field-effect transistors [IGFET] having composition variations in the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/791—Arrangements for exerting mechanical stress on the crystal lattice of the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/113—Isolations within a component, i.e. internal isolations
- H10D62/115—Dielectric isolations, e.g. air gaps
- H10D62/116—Dielectric isolations, e.g. air gaps adjoining the input or output regions of field-effect devices, e.g. adjoining source or drain regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361908003P | 2013-11-22 | 2013-11-22 | |
| US61/908,003 | 2013-11-22 | ||
| US14/269,828 | 2014-05-05 | ||
| US14/269,828 US20150145069A1 (en) | 2013-11-22 | 2014-05-05 | Silicon germanium finfet formation |
| PCT/US2014/061226 WO2015076957A1 (en) | 2013-11-22 | 2014-10-17 | Silicon germanium finfet formation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN105745757A true CN105745757A (zh) | 2016-07-06 |
Family
ID=51799344
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201480062871.4A Pending CN105745757A (zh) | 2013-11-22 | 2014-10-17 | 硅锗FinFET形成 |
Country Status (5)
| Country | Link |
|---|---|
| US (2) | US20150145069A1 (enExample) |
| EP (1) | EP3072157A1 (enExample) |
| JP (1) | JP2016537818A (enExample) |
| CN (1) | CN105745757A (enExample) |
| WO (1) | WO2015076957A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9679899B2 (en) | 2015-08-24 | 2017-06-13 | Stmicroelectronics, Inc. | Co-integration of tensile silicon and compressive silicon germanium |
| US9735155B2 (en) | 2015-12-14 | 2017-08-15 | International Business Machines Corporation | Bulk silicon germanium FinFET |
| US9680019B1 (en) * | 2016-07-20 | 2017-06-13 | Globalfoundries Inc. | Fin-type field-effect transistors with strained channels |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090085027A1 (en) * | 2007-09-29 | 2009-04-02 | Intel Corporation | Three dimensional strained quantum wells and three dimensional strained surface channels by ge confinement method |
| CN101490857A (zh) * | 2006-06-30 | 2009-07-22 | 飞思卡尔半导体公司 | 形成半导体器件的方法及其结构 |
| US20110175165A1 (en) * | 2010-01-19 | 2011-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor fin device and method for forming the same using high tilt angle implant |
| CN103021827A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管、cmos鳍式场效应管的形成方法 |
| CN103187297A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的制作方法 |
Family Cites Families (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20040206951A1 (en) * | 2003-04-18 | 2004-10-21 | Mirabedini Mohammad R. | Ion implantation in channel region of CMOS device for enhanced carrier mobility |
| US20060163581A1 (en) * | 2005-01-24 | 2006-07-27 | Lsi Logic Corporation | Fabrication of strained silicon film via implantation at elevated substrate temperatures |
| US20070257315A1 (en) * | 2006-05-04 | 2007-11-08 | International Business Machines Corporation | Ion implantation combined with in situ or ex situ heat treatment for improved field effect transistors |
| US8557692B2 (en) * | 2010-01-12 | 2013-10-15 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFET LDD and source drain implant technique |
| US8598025B2 (en) * | 2010-11-15 | 2013-12-03 | Varian Semiconductor Equipment Associates, Inc. | Doping of planar or three-dimensional structures at elevated temperatures |
| CN102779753B (zh) * | 2011-05-12 | 2015-05-06 | 中芯国际集成电路制造(上海)有限公司 | 半导体器件制造方法 |
| US8722431B2 (en) * | 2012-03-22 | 2014-05-13 | Varian Semiconductor Equipment Associates, Inc. | FinFET device fabrication using thermal implantation |
| US8946792B2 (en) * | 2012-11-26 | 2015-02-03 | International Business Machines Corporation | Dummy fin formation by gas cluster ion beam |
| US9299564B2 (en) * | 2012-12-12 | 2016-03-29 | Varian Semiconductor Equipment Associates, Inc. | Ion implant for defect control |
| US9299809B2 (en) * | 2012-12-17 | 2016-03-29 | Globalfoundries Inc. | Methods of forming fins for a FinFET device wherein the fins have a high germanium content |
| US8957476B2 (en) * | 2012-12-20 | 2015-02-17 | Intel Corporation | Conversion of thin transistor elements from silicon to silicon germanium |
| US9299840B2 (en) * | 2013-03-08 | 2016-03-29 | Taiwan Semiconductor Manufacturing Company, Ltd. | FinFETs and methods for forming the same |
| US8895395B1 (en) * | 2013-06-06 | 2014-11-25 | International Business Machines Corporation | Reduced resistance SiGe FinFET devices and method of forming same |
| US8952420B1 (en) * | 2013-07-29 | 2015-02-10 | Stmicroelectronics, Inc. | Method to induce strain in 3-D microfabricated structures |
| US9142650B2 (en) * | 2013-09-18 | 2015-09-22 | Taiwan Semiconductor Manufacturing Company Limited | Tilt implantation for forming FinFETs |
| CN103972104A (zh) * | 2014-05-05 | 2014-08-06 | 清华大学 | 具有SiGe沟道的鳍式场效应晶体管及其形成方法 |
-
2014
- 2014-05-05 US US14/269,828 patent/US20150145069A1/en not_active Abandoned
- 2014-10-17 EP EP14789964.5A patent/EP3072157A1/en not_active Withdrawn
- 2014-10-17 CN CN201480062871.4A patent/CN105745757A/zh active Pending
- 2014-10-17 JP JP2016532536A patent/JP2016537818A/ja active Pending
- 2014-10-17 WO PCT/US2014/061226 patent/WO2015076957A1/en not_active Ceased
-
2016
- 2016-04-12 US US15/097,127 patent/US20160225881A1/en not_active Abandoned
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101490857A (zh) * | 2006-06-30 | 2009-07-22 | 飞思卡尔半导体公司 | 形成半导体器件的方法及其结构 |
| US20090085027A1 (en) * | 2007-09-29 | 2009-04-02 | Intel Corporation | Three dimensional strained quantum wells and three dimensional strained surface channels by ge confinement method |
| US20110175165A1 (en) * | 2010-01-19 | 2011-07-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor fin device and method for forming the same using high tilt angle implant |
| CN103021827A (zh) * | 2011-09-27 | 2013-04-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应管、cmos鳍式场效应管的形成方法 |
| CN103187297A (zh) * | 2011-12-31 | 2013-07-03 | 中芯国际集成电路制造(上海)有限公司 | 鳍式场效应晶体管的制作方法 |
Non-Patent Citations (1)
| Title |
|---|
| L. PELAZ ET AL: "Atomistic process modeling based on Kinetic Monte Carlo and Molecular Dynamics", 《ELECTRON DEVICES MEETING (IEDM), 2009 IEEE INTERNATIONAL》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| US20160225881A1 (en) | 2016-08-04 |
| EP3072157A1 (en) | 2016-09-28 |
| US20150145069A1 (en) | 2015-05-28 |
| WO2015076957A1 (en) | 2015-05-28 |
| JP2016537818A (ja) | 2016-12-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9257556B2 (en) | Silicon germanium FinFET formation by Ge condensation | |
| JP6659686B2 (ja) | コンタクトラップアラウンド構造 | |
| US7955928B2 (en) | Structure and method of fabricating FinFET | |
| KR102042476B1 (ko) | 나노와이어 트랜지스터에 대한 누설 감소 구조체 | |
| CN107258017A (zh) | 共享鳍或纳米线的场效应器件的器件隔离 | |
| US20160035891A1 (en) | Stress in n-channel field effect transistors | |
| US9496181B2 (en) | Sub-fin device isolation | |
| US20190027576A1 (en) | Composite channel metal-oxide-semiconductor field effect transistor (mosfet) | |
| US20160225881A1 (en) | Silicon germanium finfet formation | |
| US9165929B2 (en) | Complementarily strained FinFET structure | |
| US10665678B2 (en) | Transistor with fluorinated graphene spacer | |
| US20200185384A1 (en) | Horizontal gate-all-around (gaa) field effect transistor (fet) for complementary metal oxide semiconductor (cmos) integration | |
| TWI564940B (zh) | 擴散尖端延伸電晶體裝置及其製造方法 | |
| CN105684141A (zh) | 到晶片中的异构沟道材料集成 | |
| US20240421214A1 (en) | Fin-based field effect transistor (fet) source/drain strain to enhance driver current and performance | |
| US20240243131A1 (en) | N/p-independently strained post-replacement metal gate (rmg) gate cut for performance enhanced finfet | |
| US20250072105A1 (en) | Vertical structure-based field effect transistor (fet) input/output device integration | |
| TW202519033A (zh) | 底部通道溝槽隔離之全環繞閘極（ｇａａ）場效電晶體（ｆｅｔ） | |
| HK1240397B (zh) | 触点环绕结构 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20160706 |
|
| WD01 | Invention patent application deemed withdrawn after publication |